Patents by Inventor Yung-Han Chen

Yung-Han Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230036257
    Abstract: The invention discloses a Raman laser apparatus including a linear cavity having a first direction and a second direction opposite to the first direction, the linear cavity including along the first direction: a first optical component, a gain medium, a Raman medium, a lithium triborate (LBO) crystal and a second optical component. The first optical component receives an incident pumping light in the first direction. The gain medium receives the pumping light from the first optical component, and generates a first infrared base laser having a first wavelength. The Raman medium receives the first infrared base laser, and generates a second infrared base laser having a second wavelength. The LBO crystal receives the first and the second infrared base lasers, and generates a visible laser light having a third wavelength. The second optical component is configured to allow the visible laser light to be transmitted out along the first direction.
    Type: Application
    Filed: October 19, 2021
    Publication date: February 2, 2023
    Applicant: National Yang Ming Chiao Tung University
    Inventors: Yung-Fu Chen, Hsing-Chih Liang, Chia-Han Tsou
  • Patent number: 11541551
    Abstract: A robotic arm comprising an operation end, a base, a sensor unit and a control unit is provided. The operation end is connected to the base, and the operation end is configured to reach an operational area. The sensor unit provides a sensor signal according to the force applied by or the motion of an operator. When the operation end reaches the operational area, the control unit sets a fixed position on the robotic arm between the base and the operation end. When the sensor signal from the operator fulfills a default condition, the control unit moves the robotic arm away from the operator, without moving the fixed position on the robotic arm.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: January 3, 2023
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Jia-Yush Yen, You-Ting Liao, Ching-Yuan Chen, Yen-Han Wang, Yung-Yaw Chen, Ming-Chih Ho
  • Patent number: 11522333
    Abstract: A high repetition rate pulse laser including a linear cavity having a first direction and a second direction opposite to the first direction is disclosed. The pulse laser includes, along the first direction, a first optical component, a gain and Raman medium, an acousto-optic crystal, a first lithium triborate (LBO) crystal and a second optical component. The first optical component allows a pumping light incident in the first direction to transmit therethrough. The gain and Raman medium receives the pumping light from the first optical component, and generates a first infrared base laser light having a first wavelength and a second infrared base laser light having a second wavelength. The acousto-optic crystal receives a radio frequency control signal from a radio frequency controller, wherein the radio frequency control signal has a signal period including a low level period and a high level period.
    Type: Grant
    Filed: March 15, 2021
    Date of Patent: December 6, 2022
    Assignee: National Yang Ming Chiao Tung University
    Inventors: Yung-Fu Chen, Hsing-Chih Liang, Chia-Han Tsou
  • Publication number: 20220352019
    Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.
    Type: Application
    Filed: July 7, 2022
    Publication date: November 3, 2022
    Inventors: Hsin-Ping Chen, Ming-Han Lee, Shin-Yi Yang, Yung-Hsu Wu, Chia-Tien Wu, Shau-Lin Shue, Min Cao
  • Publication number: 20220328650
    Abstract: A semiconductor device includes an interface layer on a substrate, a gate dielectric layer on the interface layer, and a work function metal layer on the gate dielectric layer. An interface between the interface layer and the gate dielectric layer has a concentration of a dipole-inducing element. The semiconductor device also includes an oxygen blocking layer on the work function metal layer and a metal fill layer on the oxygen blocking layer.
    Type: Application
    Filed: November 22, 2021
    Publication date: October 13, 2022
    Inventors: An-Hung Tai, Yung-Hsiang Chan, Shan-Mei Liao, Hsin-Han Tsai, Jian-Hao Chen, Kuo-Feng Yu
  • Publication number: 20220328356
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.
    Type: Application
    Filed: June 24, 2022
    Publication date: October 13, 2022
    Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung-Jung Chang
  • Patent number: 11469360
    Abstract: An electronic device is provided. The electronic device includes: a support structure, a heat-dissipation layer, a first adhesive and an electronic panel. The heat-dissipation layer is disposed on the support structure and includes at least one first hole. The first adhesive is disposed in the at least one first hole. The electronic panel is disposed on the heat-dissipation layer.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: October 11, 2022
    Assignee: INNOLUX CORPORATION
    Inventors: Chia-Hsien Lin, Yung-Kan Chen, Chien-Tzu Chu, Min-Han Tsai, Hao-Jung Huang
  • Publication number: 20220294178
    Abstract: The invention discloses a visible laser apparatus including a linear cavity. The linear cavity includes along the first direction: a first optical component, a gain medium, a second optical component, a Raman crystal, a double-harmonic crystal and a third optical component. The first optical component receives an incident pumping light in the first direction. The gain medium receives the pumping light from the first optical component, and generates a first infrared base laser having a first wavelength. The second optical component has a first high transmittance in a first wave band including the first wavelength in the first and the second directions. The Raman crystal receives the first infrared base laser, and generates a second infrared base laser having a second wavelength. The double-harmonic crystal receives the first and the second infrared base lasers, and generates a visible laser light having a third wavelength.
    Type: Application
    Filed: September 2, 2021
    Publication date: September 15, 2022
    Applicant: National Yang Ming Chiao Tung University
    Inventors: Yung-Fu Chen, Hsing-Chih Liang, Chia-Han Tsou
  • Publication number: 20220262770
    Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, the 3D IC comprises a first IC die comprising a first substrate, a first interconnect structure disposed over the first substrate, and a first through substrate via(TSV) disposed through the first substrate. The 3D IC further comprises a second IC die comprising a second substrate, a second interconnect structure disposed over the second substrate, and a second TSV disposed through the second substrate. The 3D IC further comprises a bonding structure arranged between back sides of the first IC die and the second IC die opposite to corresponding interconnect structures and bonding the first IC die and the second IC die. The bonding structure comprises conductive features disposed between and electrically connecting the first TSV and the second TSV.
    Type: Application
    Filed: April 26, 2022
    Publication date: August 18, 2022
    Inventors: Kuo-Ming Wu, Ching-Chun Wang, Dun-Nian Yaung, Hsing-Chih Lin, Jen-Cheng Liu, Min-Feng Kao, Yung-Lung Lin, Shih-Han Huang, I-Nan Chen
  • Patent number: 11410972
    Abstract: A method for manufacturing three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is formed and bonded to a first IC die by a first bonding structure. A third IC die is formed and bonded to the second IC die by a second bonding structure. The second bonding structure is formed between back sides of the second IC die and the third IC die opposite to corresponding interconnect structures and comprises a first TSV (through substrate via) disposed through a second substrate of the second IC die and a second TSV disposed through a third substrate of the third IC die. In some further embodiments, the second bonding structure is formed by forming conductive features with oppositely titled sidewalls disposed between the first TSV and the second TSV.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: August 9, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Ming Wu, Ching-Chun Wang, Dun-Nian Yaung, Hsing-Chih Lin, Jen-Cheng Liu, Min-Feng Kao, Yung-Lung Lin, Shih-Han Huang, I-Nan Chen
  • Patent number: 11380590
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: July 5, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung-Jung Chang
  • Publication number: 20220165877
    Abstract: In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.
    Type: Application
    Filed: January 28, 2022
    Publication date: May 26, 2022
    Inventors: Yu-Chu LIN, Chi-Chung JEN, Wen-Chih CHIANG, Ming-Hong SU, Yung-Han CHEN, Mei-Chen SU, Chia-Ming PAN
  • Patent number: 11257963
    Abstract: In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: February 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chu Lin, Chi-Chung Jen, Wen-Chih Chiang, Ming-Hong Su, Yung-Han Chen, Mei-Chen Su, Chia-Ming Pan
  • Patent number: 10756447
    Abstract: A communication terminal device is applicable to an aerial vehicle. The communication terminal device includes an antenna, an altimeter and a processing circuit. The antenna is configured to provide a transceiving range of electromagnetic waves. The flight height detector is configured to obtain an altitude measurement value adapted to specify an altitude of the aerial vehicle. The processing circuit is coupled to the altimeter and is configured to: determine whether the altitude measurement value exceeds a height threshold value; set the transceiving range of electromagnetic waves of the antenna to be omni-directional in response to determining that the altitude measurement value does not exceed the height threshold value; in response to determining that the altitude exceeds the height threshold value, execute an antenna beam width adjusting mechanism, so that the transceiving range of electromagnetic waves of the antenna is shaped into a directional beam.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: August 25, 2020
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventor: Yung-Han Chen
  • Patent number: 10614645
    Abstract: An intelligent door lock, a control method thereof, and an unlocking apparatus and method thereof are provided. The unlocking method is adapted for an unlocking apparatus to unlock a door lock apparatus, and includes following steps. Receiving a plurality of broadcast packages sent by the door lock apparatus in response to an operation on the door lock apparatus, and detecting a variation in signal strengths of the broadcast packets caused by the operation. Reading a stage message, which is recorded in each of the broadcast packages, of the door lock apparatus corresponding to the operation. Determining whether a variation of the stage messages matches a variation of the signal strengths of the broadcast packages. Sending an unlocking signal to the door lock apparatus for executing unlocking if a determination result indicates match.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: April 7, 2020
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Min Tsai, Yung-Han Chen
  • Publication number: 20200071957
    Abstract: The disclosure provides an electronic lock without an active power source, an electronic lock system, and a method of operating the electronic lock. According to an exemplary embodiment, the electronic lock includes a WPR which receives wireless electrical power to provide power for the electronic lock; a circuit board electrically connected to the WPR and including a wireless transceiver which receives a lock command or an unlock command; and a controller configured to generate a lock control signal or an unlock control signal in response to receiving the lock command or an unlock command; and an actuator electrically connected to the circuit board and receives the lock control signal to lock a mechanical lock component or the unlock control signal to unlock the mechanical lock component.
    Type: Application
    Filed: September 5, 2019
    Publication date: March 5, 2020
    Applicant: Industrial Technology Research Institute
    Inventor: Yung-Han Chen
  • Publication number: 20190173201
    Abstract: A communication terminal device is applicable to an aerial vehicle. The communication terminal device includes an antenna, an altimeter and a processing circuit. The antenna is configured to provide a transceiving range of electromagnetic waves. The flight height detector is configured to obtain an altitude measurement value adapted to specify an altitude of the aerial vehicle. The processing circuit is coupled to the altimeter and is configured to: determine whether the altitude measurement value exceeds a height threshold value; set the transceiving range of electromagnetic waves of the antenna to be omni-directional in response to determining that the altitude measurement value does not exceed the height threshold value; in response to determining that the altitude exceeds the height threshold value, execute an antenna beam width adjusting mechanism, so that the transceiving range of electromagnetic waves of the antenna is shaped into a directional beam.
    Type: Application
    Filed: December 5, 2017
    Publication date: June 6, 2019
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventor: Yung-Han Chen
  • Patent number: 9838977
    Abstract: A communication method, an electronic device and a system for managing transmission of notification messages are provided. The method recognizes a transmission power of a base station is to be increased or decreased according to information of the base station. If the transmission power of the base station is to be increased, a first notification procedure is triggered to have one or more vicinity base stations of the base station transmitting a first message. And if the transmission power of the base station is to be decreased, a second notification procedure is triggered to have the base station transmitting a second message.
    Type: Grant
    Filed: April 16, 2016
    Date of Patent: December 5, 2017
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yung-Han Chen, Fang-Ching Ren
  • Publication number: 20170257831
    Abstract: A communication method, an electronic device and a system for managing transmission of notification messages are provided. The method recognizes a transmission power of a base station is to be increased or decreased according to information of the base station. If the transmission power of the base station is to be increased, a first notification procedure is triggered to have one or more vicinity base stations of the base station transmitting a first message. And if the transmission power of the base station is to be decreased, a second notification procedure is triggered to have the base station transmitting a second message.
    Type: Application
    Filed: April 16, 2016
    Publication date: September 7, 2017
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yung-Han CHEN, Fang-Ching REN
  • Patent number: 9337973
    Abstract: The present disclosure proposes a method of cooperative MIMO wireless communication, and a base station using the same. A base station would have a plurality of radio remote units (RRUs), and each of the RRUs may have a specific radio coverage and a plurality of antennas coupled to each of the RRUs. The function of the base station may include receiving a UE information, receiving a service flow, deriving a service type of the service flow, and determining a MIMO scheme, modulating the service flow into a MIMO stream according to the MIMO scheme, allocating a plurality of resource blocks, wherein the resource blocks may correspond to a portion or all of the RRUs, distributing the MIMO stream into a plurality of downlink sub streams and transmitting the downlink sub streams through the resource blocks by the RRUs corresponding to the resource blocks.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: May 10, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Hsin-An Hou, Wan-Yi Lin, Yung-Han Chen