Abstract: A method for suppressing tumor metastasis, in which an effective amount of a compound of formula (I) is administered to a subject in need thereof. Also disclosed is a method of treating cancer, in which an effective amount of a chemotherapy agent and an effective amount of a compound of formula (I) is administered to a subject in need thereof. Further disclosed are pharmaceutical compositions for suppressing tumor metastasis and for treating cancer, each of the compositions containing a compound of formula (I).

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: A semiconductor device is provided. The semiconductor device includes a first deep trench isolation (DTI) structure within a substrate. The first DTI structure includes a barrier structure, a dielectric structure, and a copper structure. The dielectric structure is between the barrier structure and the copper structure. The barrier structure is between the substrate and the dielectric structure.

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

Abstract: A protective case adapted for an electronic device is provided. The protective case includes a plurality of plates, at least one pivot module, an outer covering layer, and an inner covering layer. Each plate includes an inner surface and an outer surface, and at least one recess is defined between the plates. The pivot module is disposed in the recess and is connected to the plates. The outer covering layer is bonded to the outer surface of each plate and covers the recess. The inner covering layer is bonded to the inner surface of each plate and covers the recess. A side edge of the outer surface adjacent to the recess includes a chamfer.

Abstract: A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Abstract: A method, an apparatus and a system for cell detection are provided. In the apparatus, a hyperspectrum module is used to capture information across electromagnetic spectrums from an image, a stereo camera module is used to capture three-dimensional image information, and the hyperspectrum module and the stereo camera module form a trinocular micro spectrometer. A microscopic optical module is provided for the two modules to form hyperspectrum and three-dimensional image information from a cell and its split cells via a lens. In the method, a series of continuous images are obtained within a time period. An observation image array with a plurality of observation image zones are provided to retrieve coordinates of a plurality of feature points at different times. Finally, a holistic cellular activity can be obtained by analyzing continuous hyperspectrum and 3D image information from the images over time.

Abstract: A semiconductor structure includes a first source/drain region, a second source/drain region, a channel doping region, a gate structure, a first well and a second well. The second source/drain region is disposed opposite to the first source/drain region. The channel doping region is disposed between the first source/drain region and the second source/drain region. The gate structure is disposed on the channel doping region. The first well has a first portion disposed under the first source/drain region. The second well is disposed opposite to the first well and separated from the second source/drain region. The first source/drain region, the second source/drain region and the channel doping region have a first conductive type. The first well and the second well have a second conductive type different from the first conductive type.

Abstract: A magnetoresistor device includes a magnetoresistor, a protection layer, a first conductive structure, and a second conductive structure. The magnetoresistor is disposed over a substrate. The protection layer is formed over a portion of the magnetoresistor. The first conductive structure is disposed over the protection layer and includes a lower barrier layer and a metal layer disposed over the lower barrier layer. The second conductive structure is disposed over the substrate and partially covers the magnetoresistor. The second conductive structure includes the lower barrier layer and the metal layer disposed over the lower barrier layer.

Abstract: A protective case adapted for an electronic device is provided. The protective case includes a plurality of plates, at least one pivot module, an outer covering layer, and an inner covering layer. Each plate includes an inner surface and an outer surface, and at least one recess is defined between the plates. The pivot module is disposed in the recess and is connected to the plates. The outer covering layer is bonded to the outer surface of each plate and covers the recess. The inner covering layer is bonded to the inner surface of each plate and covers the recess. A side edge of the outer surface adjacent to the recess includes a chamfer.

Abstract: A method for suppressing tumor metastasis, in which an effective amount of a compound of formula (I) is administered to a subject in need thereof. Also disclosed is a method of treating cancer, in which an effective amount of a chemotherapy agent and an effective amount of a compound of formula (I) is administered to a subject in need thereof. Further disclosed are pharmaceutical compositions for suppressing tumor metastasis and for treating cancer, each of the compositions containing a compound of formula (I).

Abstract: A non-volatile memory and a program method thereof are provided. The program method includes: selecting a programmed word line, where the programmed word line has a plurality of segments respectively corresponding to a plurality of bit lines; providing a program voltage to a voltage receiving end of the programmed word line, and sequentially transmitting the program voltage to the segments; respectively providing a plurality of bit line voltages to the bit lines at a plurality of enable time points and turning on a string selection switch at a setting time point; and setting voltage values of the bit line voltages according to the segments corresponding to the bit lines, respectively, or setting the enable time points according to the segments corresponding to the bit lines, or setting the setting time point according to a voltage transmission delay of the programmed word line.

Abstract: An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. The method further includes patterning the metal layer to form a metal pattern, forming a spacer on a sidewall of the metal pattern and covering a portion of the first barrier layer. The method further includes etching the first barrier layer, wherein the portion of the first barrier layer located under the spacer is not completely etched. The method further includes removing the spacer and exposing the sidewall of the metal pattern to form an electrical contact structure on the thin film material layer, wherein the first barrier layer has a protrusion part exceeding the sidewall of the metal pattern.

Abstract: A method, an apparatus and a system for cell detection are provided. In the apparatus, a hyperspectrum module is used to capture information across electromagnetic spectrums from an image, a stereo camera module is used to capture three-dimensional image information, and the hyperspectrum module and the stereo camera module form a trinocular micro spectrometer. A microscopic optical module is provided for the two modules to form hyperspectrum and three-dimensional image information from a cell and its split cells via a lens. In the method, a series of continuous images are obtained within a time period. An observation image array with a plurality of observation image zones are provided to retrieve coordinates of a plurality of feature points at different times. Finally, a holistic cellular activity can be obtained by analyzing continuous hyperspectrum and 3D image information from the images over time.

Abstract: The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.

Abstract: An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. The method further includes patterning the metal layer to form a metal pattern, forming a spacer on a sidewall of the metal pattern and covering a portion of the first barrier layer. The method further includes etching the first barrier layer, wherein the portion of the first barrier layer located under the spacer is not completely etched. The method further includes removing the spacer and exposing the sidewall of the metal pattern to form an electrical contact structure on the thin film material layer, wherein the first barrier layer has a protrusion part exceeding the sidewall of the metal pattern.

Abstract: A magnetoresistor device includes a magnetoresistor, a protection layer, a first conductive structure, and a second conductive structure. The magnetoresistor is disposed over a substrate. The protection layer is formed over a portion of the magnetoresistor. The first conductive structure is disposed over the protection layer and includes a lower barrier layer and a metal layer disposed over the lower barrier layer. The second conductive structure is disposed over the substrate and partially covers the magnetoresistor. The second conductive structure includes the lower barrier layer and the metal layer disposed over the lower barrier layer.

Abstract: The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.

Abstract: An apparatus for a chuck having particle recesses is provided. In some embodiments, the chuck includes a plurality of impressions and a particle recess. The impressions of the plurality of impressions are laterally spaced and extend into the chuck from a top surface of the chuck to a base surface of the chuck. The base surface of the chuck defines bottom surfaces respectively of the impressions and is spaced between the top surface of the chuck and a bottom surface of the chuck. The particle recess extends in to the chuck from the top surface of the chuck to a location spaced between the base surface of the chuck and the bottom surface of the chuck. In particular, the particle recess is configured to underlie a workpiece alignment mark of a workpiece.