Patents by Inventor Yung-Hung Wang

Yung-Hung Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220377800
    Abstract: A user equipment (UE) and a method for small data transmission (SDT) are provided. The method includes initiating an SDT procedure while the UE is in a Radio Resource Control (RRC) Inactive (RRC_INACTIVE) state; initiating a random access (RA) procedure before the SDT procedure is terminated; and determining whether to include a Cell-Radio Network Temporary Identifier (C-RNTI) Medium Access Control (MAC) Control Element (CE) in an uplink (UL) message during the RA procedure based on at least one condition. The at least one condition includes whether the SDT procedure corresponds to a Configured Grant (CG)-SDT procedure. The UL message is a message 3 (Msg3) in a case that the RA procedure is a 4-step RA procedure. The UL message is a message A (MsgA) in a case that the RA procedure is a 2-step RA procedure.
    Type: Application
    Filed: May 3, 2022
    Publication date: November 24, 2022
    Inventors: HENG-LI CHIN, HSIN-HSI TSAI, YUNG-LAN TSENG, HAI-HAN WANG, CHIA-HUNG WEI
  • Patent number: 11506611
    Abstract: A surface-enhanced Raman scattering (SERS) detection method is provided for detecting a target analyte in a sample. The SERS detection method generally includes the steps of: (a). preparing an extract of the sample; (b). introducing the sample extract onto a SERS substrate, causing the target analyte to be absorbed in the SERS substrate; (c). introducing a volatile organic solvent onto the SERS substrate to have the target analyte of the sample extract dissolved and comes out of the SERS substrate; (d). irradiating the SERS substrate with light to evaporate the volatile organic solvent, leaving a more condensed target analyte on the SERS substrate; (e). irradiating the condensed target analyte with laser light to have the target analyte penetrate deeply into the SERS substrate; and (f). performing Raman measurement with a laser beam focusing on the SERS substrate to analyze the target analyte.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: November 22, 2022
    Assignee: PHANSCO CO., LTD.
    Inventors: Chao-Ming Tsen, Ching-Wei Yu, Wei-Chung Chao, Yung-Hsiang Wang, Cheng-Chien Li, Shao-Kai Lin, Tzu-Hung Hsu, Chang-Jung Wen
  • Publication number: 20220369264
    Abstract: A method and a user equipment (UE) for performing timing alignment is provided. The method includes receiving, from a Base Station (BS), a Timing Advance (TA) report configuration in System Information (SI); and transmitting, to the BS, a TA report based on the TA report configuration. The TA report configuration includes an indication for enabling or disabling the UE to transmit the TA report.
    Type: Application
    Filed: May 11, 2022
    Publication date: November 17, 2022
    Inventors: CHIEN-CHUN CHENG, HSIN-HSI TSAI, CHIA-HUNG WEI, HAI-HAN WANG, YUNG-LAN TSENG
  • Patent number: 11493573
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: November 8, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ann Lorraine Carvajal, Ming Mao, Chen-Jung Chien, Yuankai Zheng, Ronghui Zhou, Dujiang Wan, Carlos Corona, Daniele Mauri, Ming Jiang
  • Publication number: 20220344133
    Abstract: A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.
    Type: Application
    Filed: July 12, 2022
    Publication date: October 27, 2022
    Inventors: HSIN-LIANG CHEN, WEN-CHIH WANG, CHIA-HUNG LIAO, CHENG-CHIEH CHEN, YI-MING YEH, HUNG-TING LIN, YUNG-YAO LEE
  • Patent number: 11428758
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: August 30, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ming Mao, Daniele Mauri, Ming Jiang
  • Publication number: 20220269565
    Abstract: A system and method for preventing a hang up after initiation of a watch dog time out in a computer system. A start-up routine is run via a basic input output system (BIOS). The routine applies settings for hardware components. It is determined if a watch dog timer triggered a restart from timing out when the start-up routine ran previously. The system checks a database storing settings for each of the plurality of hardware components for a proper setting for the hardware components if the watch dog timer triggered the restart. The system applies the settings from the database for the hardware components to avoid another hang up.
    Type: Application
    Filed: February 19, 2021
    Publication date: August 25, 2022
    Inventors: Yung-Fong CHOU, Kuo-Chun LIAO, Zhen-AN HUNG, Mei-Chen WANG
  • Publication number: 20220262928
    Abstract: A method includes forming a dielectric layer on a semiconductor workpiece, forming a first patterned layer of a first dipole material on the dielectric layer, and performing a first thermal drive-in operation at a first temperature to form a diffusion feature in a first portion of the dielectric layer beneath the first patterned layer. The method also includes forming a second patterned layer of a second dipole material, where a first section of the second patterned layer is on the diffusion feature and a second patterned layer is offset from the diffusion feature. The method further includes performing a second thermal drive-in operation at a second temperature, where the second temperature is less than the first temperature. The method additionally includes forming a gate electrode layer on the dielectric layer.
    Type: Application
    Filed: September 1, 2021
    Publication date: August 18, 2022
    Inventors: Yung-Hsiang Chan, Shan-Mei Liao, Wen-Hung Huang, Jian-Hao Chen, Kuo-Feng Yu, Mei-Yun Wang
  • Patent number: 11415645
    Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: August 16, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Yuankai Zheng, Christian Kaiser, Zhitao Diao, Chih-Ching Hu, Chen-jung Chien, Yung-Hung Wang, Ming Mao, Ming Jiang
  • Patent number: 11410690
    Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: August 9, 2022
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ming Mao, Guanxiong Li, Daniele Mauri, Xiaoyong Liu, Yukimasa Okada, Anup Roy, Chen-Jung Chien, Hongxue Liu
  • Patent number: 11385305
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 12, 2022
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Yuankai Zheng, Christian Kaiser, Zhitao Diao, Chih-Ching Hu, Chen-Jung Chien, Yung-Hung Wang, Dujiang Wan, Ronghui Zhou, Ming Mao, Ming Jiang, Daniele Mauri
  • Publication number: 20210390978
    Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
    Type: Application
    Filed: June 11, 2020
    Publication date: December 16, 2021
    Inventors: Chih-Ching HU, Yung-Hung WANG, Ming MAO, Guanxiong LI, Daniele MAURI, Xiaoyong LIU, Yukimasa OKADA, Anup ROY, Chen-jung CHIEN, Hongxue LIU
  • Patent number: 11201280
    Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: December 14, 2021
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Ronghui Zhou, Ming Mao, Ming Jiang, Yuankai Zheng, Chen-jung Chien, Yung-Hung Wang, Chih-Ching Hu
  • Patent number: 11169226
    Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: November 9, 2021
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Yung-Hung Wang, Chih-Ching Hu, Carlos Corona
  • Patent number: 11169228
    Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of tunneling magnetoresistance (TMR) structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: November 9, 2021
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Yung-Hung Wang, Daniele Mauri, Ming Mao, Chen-jung Chien, Yuankai Zheng, Chih-Ching Hu, Carlos Corona, Matthew Stevenson, Ming Jiang
  • Patent number: 11169227
    Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: November 9, 2021
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Yuankai Zheng, Chen-jung Chien, Ming Mao, Daniele Mauri, Ming Jiang
  • Publication number: 20210333878
    Abstract: A brainwave feedback system, adapted to generate feedback based on a user's brainwave, the brainwave feedback system comprises: a brainwave sensing device, configured to obtain a first brainwave signal of the user; a server, storing a keyword string pool including a plurality of sorted keywords, and performing a feedback procedure when a first physiological parameter falls outside of a predetermined parameter range, wherein the first physiological parameter is associated with the first brainwave signal, the feedback procedure includes choosing a keyword from the keyword string pool by the server as a feedback keyword, and outputting the feedback keyword; and an output component, in communicable connection with the server, wherein the output component presents an analysis result corresponding to the first physiological parameter. The present disclosure further discloses an operation method of brainwave feedback system.
    Type: Application
    Filed: May 28, 2020
    Publication date: October 28, 2021
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Sheng-Fu LIANG, Fu-Zen SHAW, Chih-En KUO, Yung-Hung WANG, Tsung-Hua LU, Tsung-Hao HSIEH, Tai-Jie YUN, Jen Jui HSUEH, I Yu CHEN
  • Publication number: 20210063509
    Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
    Type: Application
    Filed: December 30, 2019
    Publication date: March 4, 2021
    Inventors: Yung-Hung WANG, Daniele MAURI, Ming MAO, Chen-jung CHIEN, Yuankai ZHENG, Chih-Ching HU, Carlos CORONA, Matthew STEVENSON, Ming JIANG
  • Publication number: 20210063503
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.
    Type: Application
    Filed: December 18, 2019
    Publication date: March 4, 2021
    Inventors: Chih-Ching HU, Yung-Hung WANG, Ming MAO, Daniele MAURI, Ming JIANG
  • Publication number: 20210063502
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
    Type: Application
    Filed: December 18, 2019
    Publication date: March 4, 2021
    Inventors: Chih-Ching HU, Yung-Hung WANG, Ann Lorraine CARVAJAL, Ming MAO, Chen-Jung CHIEN, Yuankai ZHENG, Ronghui ZHOU, Dujiang WAN, Carlos CORONA, Daniele MAURI, Ming JIANG