Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. The semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. A third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. A fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.

Abstract: The present disclosure generally relates to a dual free layer (DFL) read head and methods of forming thereof. In one embodiment, a method of forming a DFL read head comprises depositing a DFL sensor, defining a stripe height of the DFL sensor, depositing a rear bias (RB) adjacent to the DFL sensor, defining a track width of the DFL sensor and the RB, and depositing synthetic antiferromagnetic (SAF) soft bias (SB) side shields adjacent to the DFL sensor. In another embodiment, a method of forming a DFL read head comprises depositing a DFL sensor, defining a track width of the DFL sensor, depositing SAF SB side shields adjacent to the DFL sensor, defining a stripe height of the DFL sensor and the SAF SB side shield, depositing a RB adjacent to the DFL sensor and the SAF SB side shield, and defining a track width of the RB.

Abstract: A brainwave feedback system, adapted to generate feedback based on a user's brainwave, the brainwave feedback system comprises: a brainwave sensing device, configured to obtain a first brainwave signal of the user; a server, storing a keyword string pool including a plurality of sorted keywords, and performing a feedback procedure when a first physiological parameter falls outside of a predetermined parameter range, wherein the first physiological parameter is associated with the first brainwave signal, the feedback procedure includes choosing a keyword from the keyword string pool by the server as a feedback keyword, and outputting the feedback keyword; and an output component, in communicable connection with the server, wherein the output component presents an analysis result corresponding to the first physiological parameter. The present disclosure further discloses an operation method of brainwave feedback system.

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Abstract: The present disclosure generally relates to a dual free layer (DFL) two dimensional magnetic recording (TDMR) read head. The read head comprises a first sensor, a first rear hard bias (RHB) structure disposed adjacent to the first sensor, an upper shield disposed over the first sensor and first RHB structure, a lower shield disposed over the upper shield, a second sensor disposed over the lower shield, and a second RHB structure disposed adjacent to the second sensor. A first surface of the first sensor is substantially flush or aligned with a first surface of the first RHB structure. A first surface of the second sensor is substantially flush or aligned with a first surface of the second RHB structure. The upper shield extends linearly from a media facing surface into the read head. The first lower shield is over-milled a greater amount of time than the second lower shield.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.

Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.

Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.

Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).

Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.

Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.

Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of tunneling magnetoresistance (TMR) structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Abstract: A brainwave feedback system, adapted to generate feedback based on a user's brainwave, the brainwave feedback system comprises: a brainwave sensing device, configured to obtain a first brainwave signal of the user; a server, storing a keyword string pool including a plurality of sorted keywords, and performing a feedback procedure when a first physiological parameter falls outside of a predetermined parameter range, wherein the first physiological parameter is associated with the first brainwave signal, the feedback procedure includes choosing a keyword from the keyword string pool by the server as a feedback keyword, and outputting the feedback keyword; and an output component, in communicable connection with the server, wherein the output component presents an analysis result corresponding to the first physiological parameter. The present disclosure further discloses an operation method of brainwave feedback system.

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.

Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.