Patents by Inventor Yung-Hung Wang
Yung-Hung Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140048895Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, and a free layer formed over the tunnel insulating layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. A dimension of the reference layer in a horizontal direction substantially parallel to the surface is larger than a dimension of the free layer in the horizontal direction.Type: ApplicationFiled: March 15, 2013Publication date: February 20, 2014Applicant: Industrial Technology Research InstituteInventors: Sheng-Huang Huang, Kuei-Hung Shen, Yung-Hung Wang
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Publication number: 20140048896Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.Type: ApplicationFiled: May 23, 2013Publication date: February 20, 2014Applicant: Industrial Technology Research InstituteInventors: Sheng-Huang Huang, Kuei-Hung Shen, Yung-Hung Wang
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Publication number: 20130207209Abstract: A top-pinned magnetic tunnel junction device with perpendicular magnetization, including a bottom electrode, a non-ferromagnetic spacer, a free layer, a tunneling barrier, a synthetic antiferromagnetic reference layer and a top electrode, is provided. The non-ferromagnetic spacer is located on the bottom electrode. The free layer is located on the non-ferromagnetic spacer. The tunnel insulator is located on the free layer. The synthetic antiferromagnetic reference layer is located on the tunneling barrier. The synthetic antiferromagnetic reference layer includes a top reference layer located on the tunneling barrier, a middle reference layer located on the bottom reference layer and a bottom reference layer located on the tunneling barrier. The magnetization of the top reference layer is larger than that of the bottom reference layer. The top electrode is located on the synthetic antiferromagnetic reference layer.Type: ApplicationFiled: April 16, 2012Publication date: August 15, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yung-Hung Wang, Kuei-Hung Shen, Ding-Yeong Wang, Shan-Yi Yang
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Publication number: 20130168788Abstract: A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.Type: ApplicationFiled: August 31, 2012Publication date: July 4, 2013Inventors: Yung-Hung Wang, Sheng-Huang Huang, Kuei-Hung Shen, Keng-Ming Kuo
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Patent number: 8421171Abstract: A magnetic random access memory (MRAM) has a perpendicular magnetization direction. The MRAM includes a first magnetic layer, a second magnetic layer, a first polarization enhancement layer, a second polarization enhancement layer, a barrier layer, a spacer, and a free assisting layer. A pinned layer formed by the first magnetic layer and the first polarization enhancement layer has a first magnetization direction and a first perpendicular magnetic anisotropy. A free layer formed by the second magnetic layer and the second polarization enhancement layer has a second magnetization direction and a second perpendicular magnetic anisotropy. The barrier layer is disposed between the first polarization enhancement layer and the second polarization enhancement layer. The spacer is disposed on the second magnetic layer. The free assisting layer is disposed on the spacer and has an in-plane magnetic anisotropy. The spacer and the barrier layer are on opposite sides of the free layer.Type: GrantFiled: December 6, 2010Date of Patent: April 16, 2013Assignee: Industrial Technology Research InstituteInventors: Cheng-Tyng Yen, Yung-Hung Wang
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Publication number: 20120253694Abstract: A method for judging the status of a mechanical system is provided. First, a vibration signal related to the mechanical system is provided. Subsequently, an empirical mode decomposition process is performed on the vibration signal, so as to generate a plurality of intrinsic mode functions. Plural target intrinsic mode functions are selected from the intrinsic mode functions. Based on the target intrinsic mode functions, the status of the mechanical system is judged.Type: ApplicationFiled: September 12, 2011Publication date: October 4, 2012Inventors: Hong-Tsu Young, Yu-Hsiang Pan, Yung-Hung Wang, Wei-Yen Lin
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Patent number: 8143683Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.Type: GrantFiled: April 8, 2010Date of Patent: March 27, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yung-Hung Wang, Yu-Jen Wang, Mark Juang, Chia-Shiung Tsai
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Publication number: 20110241139Abstract: A magnetic random access memory (MRAM) has a perpendicular magnetization direction. The MRAM includes a first magnetic layer, a second magnetic layer, a first polarization enhancement layer, a second polarization enhancement layer, a barrier layer, a spacer, and a free assisting layer. A pinned layer formed by the first magnetic layer and the first polarization enhancement layer has a first magnetization direction and a first perpendicular magnetic anisotropy. A free layer formed by the second magnetic layer and the second polarization enhancement layer has a second magnetization direction and a second perpendicular magnetic anisotropy. The barrier layer is disposed between the first polarization enhancement layer and the second polarization enhancement layer. The spacer is disposed on the second magnetic layer. The free assisting layer is disposed on the spacer and has an in-plane magnetic anisotropy. The spacer and the barrier layer are on opposite sides of the free layer.Type: ApplicationFiled: December 6, 2010Publication date: October 6, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Cheng-Tyng Yen, Yung-Hung Wang
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Publication number: 20110159316Abstract: A magnetoresistive device with perpendicular magnetization includes a magnetic reference layer, a first magnetic multi-layer film, a tunneling barrier layer, a second magnetic multi-layer film, and a magnetic free layer. The magnetic reference layer has a first magnetization direction, perpendicular to the magnetic reference layer. The first magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the magnetic reference layer. The tunneling barrier layer is disposed in contact on the first magnetic multi-layer film. The second magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the tunneling barrier layer. The magnetic free layer is disposed in contact on the second magnetic multi-layer film, having a second magnetization direction capable of being switched to be parallel or anti-parallel to the first magnetization direction.Type: ApplicationFiled: February 26, 2010Publication date: June 30, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yung-Hung Wang, Cheng-Tyng Yen, Shan-Yi Yang
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Publication number: 20100193891Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.Type: ApplicationFiled: April 8, 2010Publication date: August 5, 2010Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Hung Wang, Yu-Jen Wang, Mark Juang, Chia-Shiung Tsai
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Patent number: 7723128Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.Type: GrantFiled: February 18, 2008Date of Patent: May 25, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Hung Wang, Yu-Jen Wang, Mark Juang, Chia-Shiung Tsai
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Publication number: 20090303779Abstract: An integrated circuit structure includes a first fixed magnetic element; a second fixed magnetic element; and a composite free magnetic element between the first and the second fixed magnetic elements. The composite free magnetic element includes a first free layer and a second free layer.Type: ApplicationFiled: June 5, 2008Publication date: December 10, 2009Inventors: Young-Shying Chen, Yung-Hung Wang, Yu-Jen Wang, Chun-Jung Lin
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Patent number: 7606063Abstract: A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.Type: GrantFiled: June 18, 2007Date of Patent: October 20, 2009Assignee: Industrial Technology Research InstituteInventors: Chih-Ta Shen, Yung-Hung Wang, Cheng-Tying Yen, Kuei-Hung Shen, Wei-Chuan Chen, Shan-Yi Yang
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Patent number: 7583529Abstract: A magnetic random access memory (MRAM) is disclosed. The MRAM includes a first electrode, an antiferromagnetic layer formed over the first electrode, a pinned layer formed over the antiferromagnetic layer, a barrier layer formed over the pinned layer, a composite free layer formed over the barrier layer, and a second electrode formed over the composite free layer. The composite free layer includes a first magnetic layer, a spacer layer and a second magnetic layer sequentially stacked over the barrier layer and the spacer layer allows parallel coupling between the first and second magnetic layers. A magnetic tunnel junction (MTJ) device suitable for a memory unit of a magnetic memory device is also provided.Type: GrantFiled: February 16, 2007Date of Patent: September 1, 2009Assignee: Industrial Technology Research InstituteInventors: Wei-Chuan Chen, Yung-Hung Wang, Shan-Yi Yang, Kuei-Hung Shen
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Publication number: 20090209050Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.Type: ApplicationFiled: February 18, 2008Publication date: August 20, 2009Inventors: Yung-Hung Wang, Yu-Jen Wang, Mark Juang, Chia-Shiung Tsai
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Patent number: 7515458Abstract: A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.Type: GrantFiled: August 18, 2006Date of Patent: April 7, 2009Assignee: Industrial Technology Research InstituteInventors: Chien-Chung Hung, Yung-Hsiang Chen, Ming-Jer Kao, Yuan-Jen Lee, Yung-Hung Wang
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Publication number: 20090032891Abstract: A structure of magnetic random access memory includes a magnetic memory cell formed on a substrate. An insulating layer covers over the substrate and the magnetic memory cell. A write current line is in the insulating layer and above the magnetic memory cell. A magnetic cladding layer surrounds the periphery of the write current line. The magnetic cladding layer includes a first region surrounding the top of the write current line, and a second region surrounding the side edge of the write current line, and extending towards the magnetic memory cell and exceed by a distance.Type: ApplicationFiled: December 12, 2007Publication date: February 5, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Cheng-Tyng Yen, Wei-Chuan Chen, Yung-Hsiang Chen, Yung-Hung Wang
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Publication number: 20080186758Abstract: A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.Type: ApplicationFiled: June 18, 2007Publication date: August 7, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chih-Ta SHEN, Yung-Hung WANG, Cheng-Tying YEN, Kuei-Hung SHEN, Wei-Chuan CHEN, Shan-Yi YANG
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Publication number: 20080094888Abstract: A magnetic random access memory (MRAM) is disclosed. The MRAM includes a first electrode, an antiferromagnetic layer formed over the first electrode, a pinned layer formed over the antiferromagnetic layer, a barrier layer formed over the pinned layer, a composite free layer formed over the barrier layer, and a second electrode formed over the composite free layer. The composite free layer includes a first magnetic layer, a spacer layer and a second magnetic layer sequentially stacked over the barrier layer and the spacer layer allows parallel coupling between the first and second magnetic layers. A magnetic tunnel junction (MTJ) device suitable for a memory unit of a magnetic memory device is also provided.Type: ApplicationFiled: February 16, 2007Publication date: April 24, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wei-Chuan Chen, Yung-Hung Wang, Shan-Yi Yang, Kuei-Hung Shen
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Publication number: 20070242501Abstract: A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.Type: ApplicationFiled: August 18, 2006Publication date: October 18, 2007Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chien-Chung Hung, Yung-Hsiang Chen, Ming-Jer Kao, Yuan-Jen Lee, Yung-Hung Wang