Abstract: A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having a light extraction surface and an n-side contact surface, the n-side contact surface being located on a side opposite the light extraction surface, a light-emitting layer located at a region of the n-type semiconductor layer other than the n-side contact surface, and a p-type semiconductor layer located on the light-emitting layer, wherein the p-type semiconductor layer surrounds the n-side contact surface in a top view; a first insulating film located at a region including a central portion of the n-side contact surface; an n-side electrode including an n-contact portion located at the n-side contact surface at a periphery of the first insulating film, the n-contact portion contacting the n-side contact surface; and a p-side electrode located on the p-type semiconductor layer and contacting the p-type semiconductor layer.

Abstract: A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having a light extraction surface and an n-side contact surface, the n-side contact surface being located on a side opposite the light extraction surface, a light-emitting layer located at a region of the n-type semiconductor layer other than the n-side contact surface, and a p-type semiconductor layer located on the light-emitting layer, wherein the p-type semiconductor layer surrounds the n-side contact surface in a top view; a first insulating film located at a region including a central portion of the n-side contact surface; an n-side electrode including an n-contact portion located at the n-side contact surface at a periphery of the first insulating film, the n-contact portion contacting the n-side contact surface; and a p-side electrode located on the p-type semiconductor layer and contacting the p-type semiconductor layer.