Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

Abstract: A method for processing a substrate on which silicon layers and silicon germanium layers are alternately disposed, includes: forming an oxide layer on a surface layer of a spacer layer based on an oxygen-containing gas radicalized using remote plasma, wherein the spacer layer having a low dielectric constant is formed at least on side surfaces of the silicon layers and the silicon germanium layers; and removing the formed oxide layer by etching.

Abstract: A method for processing a substrate on which silicon layers and silicon germanium layers are alternately disposed, includes: forming an oxide layer on a surface layer of a spacer layer based on an oxygen-containing gas radicalized using remote plasma, wherein the spacer layer having a low dielectric constant is formed at least on side surfaces of the silicon layers and the silicon germanium layers; and removing the formed oxide layer by etchir

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a silicon-germanium alloy and at least one other material, the silicon-germanium alloy represented as SixGe1-x, wherein x is a real number ranging from 0 to 1; and selectively etching the silicon-germanium alloy relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound, such as a diatomic halogen or an interhalogen compound.

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a silicon-germanium alloy and at least one other material, the silicon-germanium alloy represented as SixGe1-x, wherein x is a real number ranging from 0 to 1; and selectively etching the silicon-germanium alloy relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound, such as a diatomic halogen or an interhalogen compound.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: A substrate stage for mounting a substrate thereon includes a peripheral stage member on which a peripheral substrate portion of the substrate may be mounted, the peripheral substrate portion controlling a temperature of the peripheral substrate portion, a central stage member on which a central substrate portion of the substrate may be mounted, the central substrate portion controlling a temperature of the central substrate portion, and a support base that supports the peripheral stage member and the central stage member. A gap is formed between the peripheral stage member and the central stage member to keep the peripheral stage member and the central stage member from coming in contact with each other.

Abstract: An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.

Abstract: Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.

Abstract: A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.

Abstract: In a substrate processing apparatus comprising a processing unit where a specific type of processing is executed on a wafer and a transfer chamber through which a wafer is carried into/out of the processing unit, the transfer chamber includes an air intake unit through which external air is drawn into the transfer chamber, a discharge unit disposed so as to face opposite the air intake unit, through which the discharge gas in the transfer chamber is discharged and a discharge gas filtering means disposed at the discharge unit and constituted with a harmful constituent eliminating filter through which a harmful constituent contained in the discharge gas, at least, is eliminated.

Abstract: [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber. [Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.

Abstract: A substrate stage for mounting a substrate thereon includes a peripheral stage member on which a peripheral substrate portion of the substrate may be mounted, the peripheral substrate portion controlling a temperature of the peripheral substrate portion, a central stage member on which a central substrate portion of the substrate may be mounted, the central substrate portion controlling a temperature of the central substrate portion, and a support base that supports the peripheral stage member and the central stage member. A gap is formed between the peripheral stage member and the central stage member to keep the peripheral stage member and the central stage member from coming in contact with each other.

Abstract: A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.

Abstract: The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.