Abstract: An image pickup apparatus that enables to quickly capture an image from which a predetermined reflected light component is removed with desired sensitivity. A polarizing filter two-dimensionally arranges a plurality of sets each of which includes polarizing filter elements having different polarization directions. A first image sensor has pixels that respectively correspond to polarizing filter elements of the polarizing filter. A polarization calculation unit detects a polarized component of light that enters into a region in which one set of polarizing filter elements are arranged based on signals output from pixels in the region of the first image sensor for each region. A correction unit corrects a pixel signal output from a pixel of a second image sensor corresponding to the region based on a calculation result by the polarization calculation unit for each pixel of the second image sensor.

Abstract: A device includes a conversion unit, a generation unit configured to generate a pulse signal based on a signal from the conversion unit, a counter circuit configured to count the generated pulse signal, and a time measurement circuit configured to measure a time wherein one of a count value counted by the counter circuit or a time measurement value measured by the time measurement circuit is selectively output.

Abstract: A SiC semiconductor device includes a main cell region and sense cell region being electrically isolated by an element isolation portion. The SiC semiconductor device includes a substrate, a first impurity region, a first current dispersion layer, first deep layers, a second current dispersion layer, a second deep layer, a base region, a trench gate structure, a second impurity region, first electrodes and a second electrode. The second impurity region, the first electrodes, and the second electrode are disposed at the main cell region and the sense cell region to form a vertical semiconductor element. The vertical semiconductor element allows a current flowing between the first electrode and the second electrode through a voltage applied to the gate electrode. The spacing interval between the deep layers at the element isolation portion is shorter than or equal to a spacing interval between the deep layers at the main cell region.

Abstract: An image sensor comprises: a pixel region including a plurality of microlenses arranged in a matrix, and a plurality of photoelectric conversion portions provided for each of the microlenses; a plurality of amplifiers that apply a plurality of different gains to signals output from the pixel region; and a scanning circuit that scans the pixel region so that a partial signal and an added signal are read out, the partial signal being a signal from some of the plurality of photoelectric conversion portions, and the added signal being a signal obtained by adding the signals from the plurality of photoelectric conversion portions.

Abstract: An electronic device acquires polarization information of a subject based on a plurality of pieces of image data based on a first signal output from a first sensor. The first sensor can capture an optical image of the subject acquired via a polarizing filter provided with areas having different polarization angles. The device further acquires an evaluation value for controlling brightness of an image at the time of capturing the optical image of the subject, based on the plurality of pieces of image data. The plurality of pieces of image data have different polarization angles, by respectively being acquired via areas of the polarizing filter having the plurality of different polarization angles. A degree of weighting to be assigned to the plurality of pieces of image data at the time of acquiring the evaluation value based on the polarization information.

Abstract: A semiconductor device includes a semiconductor substrate, a top electrode in contact with a top surface of the semiconductor substrate, a bottom electrode in contact with a bottom surface of the semiconductor substrate, and an oxide film in contact with the top surface of the semiconductor substrate. The semiconductor substrate includes an element region and an outer peripheral region. The element region is a region where the top electrode is in contact with the top surface of the semiconductor substrate. The outer peripheral region is a region where the oxide film is in contact with the top surface of the semiconductor substrate, and is located between the element region and an outer peripheral end surface of the semiconductor substrate. The element region includes a semiconductor element connected between the top electrode and the bottom electrode. The outer peripheral region includes surface high-voltage-breakdown regions, deep high-voltage-breakdown regions, and a drift region.

Abstract: A switching element includes a semiconductor substrate, a gate insulating film, and a gate electrode that is disposed inside the trench. The semiconductor substrate further includes: an n-type source region, a p-type body region, an n-type drift region, a p-type first electric field reduced region, and a p-type connection region. When a permittivity of the connection region is ? (F/cm), a critical electric field strength of the connection region is Ec (V/cm), an elementary charge is e (C), an area density of p-type impurity when viewed in a plan view of the connection region located below the trench is Q (cm?2), Q>?*Ec/e.

Abstract: A silicon carbide semiconductor device includes an electric field relaxation layer disposed in a drift layer. The electric field relaxation layer includes a first region having a second conductivity type and disposed at a position deeper than trenches, and a second region having the second conductivity type and disposed between the adjacent trenches to be away from a side surface of each of the adjacent trenches. Each of the first region and the second region is made of an ion implantation layer. The electric field relaxation layer further includes a double implantation region in which the first region and the second region overlap with each other, and the electric field relaxation layer has a peak of a second conductivity type impurity concentration in the double implantation region.

Abstract: A switching element includes a semiconductor substrate having: an n-type drift region in contact with each of gate insulating films on a bottom surface and side surfaces of each of the trenches; a p-type body region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the n-type drift region; an n-type source region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the p-type body region, the n-type source region being separated away from the n-type drift region by the p-type body region; plurality of p-type bottom regions each of which is located under a corresponding one of the trenches and located away from a corresponding one of the gate insulating films; and a p-type connection region that connects the p-type bottom regions and the p-type body region.

Abstract: A semiconductor device includes a semiconductor substrate comprising an upper surface and a lower surface, an upper electrode provided on the upper surface, and a lower electrode provided on the lower surface. The semiconductor substrate includes, in a planar view, a first section including a center of the semiconductor substrate and a second section located between the first section and a peripheral edge of the semiconductor substrate. The first and second sections each comprise a MOSFET structure including a body diode. The MOSFET structure in the first section and the MOSFET structure in the second section are different from each other such that a forward voltage drop of the body diode in the first section with respect to a current density is higher than a forward voltage drop of the body diode in the second section with respect to the current density.

Abstract: A semiconductor device includes; a schottky diode; a semiconductor substrate that includes a first surface and a second surface opposite to the first surface; a schottky electrode that is placed on the first surface and schottky-contacts to the semiconductor substrate; a first electrode placed on the schottky electrode; and a second electrode that is placed on the second surface and is connected to the semiconductor substrate. The schottky electrode is made of a metal material that is a columnar crystal; and a content of carbon on the schottky electrode is less than 6×1019 cm?3 in at least a part of an area of the schottky electrode.

Abstract: A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20>direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100>direction.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: A recording apparatus includes a carriage configured to move in a width direction intersecting a medium transport direction, a recording head mounted on the carriage, a liquid storage section configured to store a liquid to be supplied to the recording head, the liquid storage section including an injection port configured to receive the liquid from a refill container and a liquid-level visual-check section through which a liquid level of the liquid is visually checked, and a display section configured to accept various setting operations, in which the liquid-level visual-check section and the display section are disposed on an apparatus front surface side, and the display section is disposed above the liquid-level visual-check section.

Abstract: A light-emitting device includes a substrate, an electrode, a light-emitting element, a variable light absorbing layer, and a sealing body. The electrode is formed on the substrate. The light-emitting element is disposed on the substrate and electrically connected to the electrode. The variable light absorbing layer is formed so as to cover the electrode on the substrate. The variable light absorbing layer contains a plurality of metal oxide particles that change a light absorption property by irradiation with an ultraviolet light. The sealing body is formed on the substrate so as to seal the light-emitting element. The sealing body has translucency to a light emitted from the light-emitting element.

Abstract: A light-emitting device having high output and high contrast with simple configuration is provided. The light-emitting device includes a substrate, a light-emitting element disposed on the substrate, a light-transmitting member disposed on the light-emitting element, and a covering body disposed on the substrate so as to surround the light-transmitting member and cover a side surface of the light-transmitting member. The covering body has a particle group including a plurality of metal oxide particles having a light scattering property and dispersed in the covering body, and the metal oxide particles existing in the vicinity of the side surface of the covering body have a portion having a bandgap smaller than that of other portions in each particle.

Abstract: In order to improve linearity characteristics in synthesis processing for expanding a dynamic range, an image pickup apparatus comprising an AD conversion unit for performing AD conversion of input signals by comparing a first ramp signal or a second ramp signal; a first synthesis unit for synthesizing a first signal AD converted using the first ramp signal and a second signal AD converted using the second ramp signal; a first correction unit for correcting a level difference between the first signal and the second signal when the first signal and the second signal are synthesized; an amplifier for amplifying pixel signals by different gains; a second synthesis unit for synthesizing the signals amplified by the different gains; and a second correction unit for correcting a level difference between the signals amplified by the different gains when the signals amplified by the different gains are synthesized.

Abstract: In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.