Patents by Inventor Yuta Endo

Yuta Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220307775
    Abstract: A heat exchanger includes: a partition wall that separates two fluids of different temperature; and multiple plate-shaped fins formed on at least one surface of the partition wall and each having a pair of heat transfer surfaces. The partition wall and the multiple fins are made of a same metal material to constitute an integrally molded product. The multiple fins each have a curved part and are arranged to be spaced from one another in a direction intersecting with the pair of heat transfer surfaces. Each heat transfer surface of the pair of heat transfer surfaces is formed with multiple grooves having a depth of 100 ?m to 400 ?m in a thickness direction of each fin.
    Type: Application
    Filed: February 17, 2022
    Publication date: September 29, 2022
    Inventors: Tsuneo ENDO, Yuta KUROSAWA
  • Publication number: 20220305737
    Abstract: A modeling method for a workpiece and the workpiece are provided. When the workpiece, at least a part of the workpiece has a hollow region and two or more openings linking an inside and the outside of the hollow region, is additively manufactured, a temporary closure to block at least one of the two or more openings of the hollow region is manufactured at a same time as laminating of a wall section of the hollow region. A peripheral edge of the temporary closure joined to the wall section, and the temporary closure has a flow hole allowing a fluid to flow in or out of the hollow region, then the temporary closure is removed after the fluid has flowed in or out.
    Type: Application
    Filed: March 23, 2022
    Publication date: September 29, 2022
    Applicants: SOLIZE Corporation, Honda Motor Co., Ltd
    Inventors: Jun MITAKE, Tsuneo ENDO, Yuta KUROSAWA
  • Publication number: 20220243034
    Abstract: A compound includes metal powder, an epoxy resin, and a wax. The content of the metal powder is from 96 mass % to less than 100 mass %. The wax includes at least one selected from the group consisting of metal salts of lauric acid, metal salts of stearic acid, and saponified montanic acid esters.
    Type: Application
    Filed: May 20, 2020
    Publication date: August 4, 2022
    Applicant: Showa Denko Materials Co., Ltd.
    Inventors: Hidetoshi INOUE, Yuta ONO, Yoshinori ENDO
  • Publication number: 20220224218
    Abstract: An integrated circuit for a power supply circuit configured to generate an output voltage of a target level from an alternating current (AC) voltage. The power supply circuit includes a first capacitor and an inductor configured to receive a voltage according to the AC voltage, and a transistor configured to control an inductor current flowing through the inductor. The integrated circuit is configured to switch the transistor, and includes: an identification circuit configured to identify whether a voltage level of an effective value of the AC voltage is a first level or a second level, and a signal output circuit configured to output a driving signal to drive the transistor, and correct the driving signal to thereby correct the input current, in response to the voltage level of the effective value being the first level and the second level, respectively.
    Type: Application
    Filed: March 29, 2022
    Publication date: July 14, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Yuta ENDO, Takato SUGAWARA
  • Publication number: 20220216797
    Abstract: An integrated circuit for a power supply circuit that includes a transistor and generates an output voltage of a target level. The integrated circuit is configured to switch the transistor. The integrated circuit includes a first terminal configured to receive a feedback voltage according to the output voltage, a signal detection circuit configured to detect, through the first terminal, a setting signal received from an external circuit that operates based on the output voltage, and a driver circuit configured to drive the transistor in response to the setting signal detected by the signal detection circuit.
    Type: Application
    Filed: March 24, 2022
    Publication date: July 7, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Yuta ENDO, Takato SUGAWARA
  • Patent number: 11362034
    Abstract: A semiconductor device that is miniaturized and highly integrated is provided. One embodiment of the present invention is a semiconductor device including a first insulator, a second insulator, a first conductor, a second conductor, and a semiconductor layer; the first insulator includes an opening exposing the semiconductor layer; the first conductor is provided in contact with the semiconductor layer at a bottom of the opening; the second insulator is provided in contact with a top surface of the first conductor and a side surface in the opening; the second conductor is provided in contact with the top surface of the first conductor and in the opening with the second insulator therebetween; and the second insulator has a barrier property against oxygen.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: June 14, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuya Kakehata, Yuta Endo
  • Publication number: 20220153795
    Abstract: High-purity glycomacropeptide with a low phenylalanine content may be obtained on an industrial scale by a method including: (A) bringing a whey protein mixture containing glycomacropeptide into contact with activated carbon; and (B) separating the glycomacropeptide from the activated carbon.
    Type: Application
    Filed: January 31, 2022
    Publication date: May 19, 2022
    Applicant: Ajinomoto Co., Inc.
    Inventors: Yuta ENDO, Mitsuhiro KISHINO, Masaya KANEKO
  • Publication number: 20220149722
    Abstract: An integrated circuit for a power supply circuit. The integrated circuit includes an oscillator circuit configured to output an oscillator voltage that rises with a predetermined slope from a first voltage, upon an inductor current of the power supply circuit becoming smaller than a first predetermined value, an error voltage output circuit configured to output an error voltage corresponding to a difference between a reference voltage and a feedback voltage corresponding to the output voltage, a drive circuit configured to turn on and off a transistor of the power supply circuit respectively upon the inductor current becoming smaller than the first predetermined value, and upon the oscillator voltage reaching a second voltage that is based on the error voltage, and an output circuit configured to change the first and/or second voltage based on a rectified voltage obtained by full-wave rectification of the AC voltage, and to output the changed voltage.
    Type: Application
    Filed: August 27, 2021
    Publication date: May 12, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Yuta ENDO, Takato SUGAWARA
  • Patent number: 11296085
    Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, and an electrode. The first transistor and the second transistor include an oxide, a gate insulator over the oxide, and a gate. The electrode is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor. The channel length of the first transistor is longer than the short side of the first conductor. The channel length of the second transistor is longer than the short side of the second conductor.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: April 5, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Hideomi Suzawa
  • Patent number: 11296231
    Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes first and second transistors and first and second capacitors. Each of the first and second transistors includes a gate insulator and a gate electrode over an oxide. Each of the first and second capacitors includes a conductor, a dielectric over the conductor, and the oxide. The first and second transistors are provided between the first capacitor and the second capacitor. One of a source and a drain of the first transistor is also used as one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is also used as one electrode of the first capacitor. The other of the source and the drain of the second transistor is also used as one electrode of the second capacitor. The channel lengths of the first and second transistors are larger than the lengths in a direction parallel to short sides of fourth and fifth conductors.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: April 5, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Hideomi Suzawa
  • Publication number: 20220052048
    Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, and an electrode. The first transistor and the second transistor include an oxide, a gate insulator over the oxide, and a gate. The electrode is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor. The channel length of the first transistor is longer than the short side of the first conductor. The channel length of the second transistor is longer than the short side of the second conductor.
    Type: Application
    Filed: October 29, 2021
    Publication date: February 17, 2022
    Inventors: Yuta ENDO, Hideomi SUZAWA
  • Patent number: 11245328
    Abstract: An integrated circuit for a power supply circuit that generates an output voltage at a target level from an AC voltage input thereto. The power supply circuit includes an inductor, and a transistor that controls a current flowing through the inductor. The integrated circuit drives the transistor based on the inductor current and the output voltage. The integrated circuit has a signal output circuit including a first comparator circuit comparing the inductor current and a predetermined current value, a timer circuit measuring a time elapsed since the value of the inductor current becomes smaller than the predetermined current value, and a second comparator circuit comparing the output voltage and a lower-than-target level. The signal output circuit indicates that the AC voltage is not input to a rectifier circuit, when the elapsed time reaches a predetermined time period and a level of the output voltage is lower than the lower-than-target level.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: February 8, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Yuta Endo
  • Publication number: 20220037323
    Abstract: A semiconductor device with a large storage capacity per unit area is provided. A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.
    Type: Application
    Filed: October 18, 2021
    Publication date: February 3, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Hajime KIMURA, Takayuki IKEDA, Kiyoshi KATO, Yuta ENDO, Junpei SUGAO
  • Patent number: 11233448
    Abstract: A switching control circuit for controlling a power supply circuit that includes an inductor to which an input voltage is applied and through which an inductor current flows, and a transistor configured to control the inductor current. The switching control circuit includes first and second error voltage output circuits that output first and second error voltages, based respectively on a feedback voltage corresponding to the output voltage and a reference voltage, and on an error signal corresponding to a difference between the level of the output voltage and a second level, when the power supply circuit is of a non-isolated type and an isolated type, respectively. The switching control circuit further includes a drive circuit that switches the transistor based on the inductor current, and on the first and second error voltage when the power supply circuit is of the non-isolated type and an isolated type, respectively.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: January 25, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yuta Endo, Hironobu Shiroyama, Nobuyuki Hiasa, Hiroki Yamane
  • Publication number: 20220020785
    Abstract: A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.
    Type: Application
    Filed: October 1, 2021
    Publication date: January 20, 2022
    Inventor: Yuta ENDO
  • Patent number: 11211467
    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: December 28, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tomoki Hiramatsu, Yusuke Nonaka, Noritaka Ishihara, Shota Sambonsuge, Yasumasa Yamane, Yuta Endo
  • Publication number: 20210398988
    Abstract: [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j-lth sub memory cell.
    Type: Application
    Filed: September 3, 2021
    Publication date: December 23, 2021
    Inventors: Tomoaki ATSUMI, Shuhei NAGATSUKA, Tamae MORIWAKA, Yuta ENDO
  • Publication number: 20210391781
    Abstract: A switching control circuit for controlling a power supply circuit that generates an output voltage from an alternating current (AC) voltage inputted thereto. The power supply circuit includes an inductor receiving a rectified voltage corresponding to the AC voltage, and a transistor controlling an inductor current flowing through the inductor. The switching control circuit controls switching of the transistor, and includes a first arithmetic circuit that calculates a first time period, from when the transistor is turned off to when the inductor current reaches a predetermined value, based on a first voltage corresponding to the rectified voltage, a second voltage corresponding to the output voltage, and the inductor current upon turning on of the transistor; and a drive circuit that causes the transistor to be on in a second time period corresponding to the second voltage, and causes the transistor to be off in the first time period.
    Type: Application
    Filed: April 22, 2021
    Publication date: December 16, 2021
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Yuta ENDO
  • Publication number: 20210384353
    Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes first and second transistors and first and second capacitors. Each of the first and second transistors includes a gate insulator and a gate electrode over an oxide. Each of the first and second capacitors includes a conductor, a dielectric over the conductor, and the oxide. The first and second transistors are provided between the first capacitor and the second capacitor. One of a source and a drain of the first transistor is also used as one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is also used as one electrode of the first capacitor. The other of the source and the drain of the second transistor is also used as one electrode of the second capacitor. The channel lengths of the first and second transistors are larger than the lengths in a direction parallel to short sides of fourth and fifth conductors.
    Type: Application
    Filed: August 21, 2018
    Publication date: December 9, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yuta ENDO, Hideomi SUZAWA
  • Patent number: 11183516
    Abstract: A semiconductor device with reduced parasitic capacitance is provided. The semiconductor device includes a first insulating layer; a first oxide layer over the first insulating layer; a semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer over the semiconductor layer; a second insulating layer over the first insulating layer; a third insulating layer over the second insulating layer, the source electrode layer, and the drain electrode layer; a second oxide layer over the semiconductor layer; a gate insulating layer over the second oxide layer; a gate electrode layer over the gate insulating layer; and a fourth insulating layer over the third insulating layer, the second oxide layer, the gate insulating layer, and the gate electrode layer.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: November 23, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideomi Suzawa, Yuta Endo, Kazuya Hanaoka