Abstract: An object of the invention is to provide a photo-alignment copolymer which makes it possible to produce a photo-alignment film having excellent solvent resistance and liquid crystal aligning properties, and a photo-alignment film and an optical laminate produced using the photo-alignment copolymer. A photo-alignment copolymer of the invention is a photo-alignment copolymer having a repeating unit A including a photo-alignment group represented by Formula (A) and a repeating unit B including a crosslinkable group represented by Formula (B).

Abstract: A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

Abstract: A process for producing a probe-driving mechanism. A laminate of a first and second insulating layer is placed on a support. Electrode layers and piezoelectric layers are successively laminated on the second insulating layer. Part of the support and second insulating layer is removed to form a cantilever.

Abstract: A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS), thereby growing a single crystal from said single nucleus.

Abstract: A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

Abstract: An electrophotographic apparatus employs a charger for charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; an exposing station for imagewise exposing the member to form an electrostatic latent image; a developer station for developing the latent image to form a toner image; a transfer station for transferring the toner image to an image receiving sheet and a blade for cleaning the surface of the cylindrical member.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: An electrophotographic process is conducted by charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; imagewise exposing the member to form an electrostatic latent image; developing the latent image to form a toner image; transferring the toner image to an image receiving sheet and thereafter cleaning the surface of the cylindrical member with a cleaning blade.

Abstract: A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).

Abstract: A process for forming a deposited film comprises the steps of:(a) arranging previously a substrate for formation of a deposited film in a film forming space;(b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and(c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.

Abstract: A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A parallel plane holding mechanism is constructed as follows. Beams are provided on the peripheral portion of a flat plate-shaped weight member. A base plate is provided so as to face the weight member. First and second electrodes are provided on both surfaces of the weight member and the base plate to face each other. A voltage is applied between the first electrode and the second electrode so that the distance between the weight member and the base plate is controlled to move the weight member to thereby hold a reference surface of the weight member to be parallel to a predetermined reference surface.

Abstract: A cantilever probe comprising a cantilever displacement element containing a piezoelectric material provided between driving electrodes for causing displacement of the piezoelectric material, a probe for information input and output provided on the free end of the element, a drawing electrode for the probe and, a non-electroconductive thin film provided on at least a portion of an end of the element.

Abstract: In a semiconductor device comprising a wiring to be connected to the source region or the drain region of a thin film transistor, at least a portion of the wiring comprising a wiring part having the same cross-sectional structure as said source region or said drain region, and said wiring part being formed continuously with said source region or said drain region simultaneously with the respective end portions of said wiring portions, said source region and said drain region formed in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor.

Abstract: A cantilever type displacement element comprises a piezoelectric layer and at least two electrodes for applying a voltage to said piezoelectric layer, at least one of said electrodes being a comb-shaped electrode pair having respectively comb-tooth portions disposed separately as facing and alongside of each other in the width direction of the cantilever.

Abstract: An angular acceleration sensor has a weight member, a resilient member for supporting the weight member from the both sides thereof, the resilient member being disposed on a predetermined rotational axis and supporting the weight member for rotation about the rotational axis, and an opposed member opposed to the weight member, an angular acceleration applied to the weight member being detected from a variation in the spacing between the opposed member and the weight member resulting from the rotation of the weight member

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.