Patents by Inventor Yutaka Kuba

Yutaka Kuba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10443149
    Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: October 15, 2019
    Assignee: KYOCERA Corporation
    Inventors: Chiaki Domoto, Yutaka Kuba, Katsuaki Masaki, Yuuichiro Hayashi
  • Patent number: 10151045
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: December 11, 2018
    Assignee: KYOCERA CORPORATION
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Publication number: 20180171506
    Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.
    Type: Application
    Filed: January 18, 2018
    Publication date: June 21, 2018
    Inventors: Katsuaki MASAKI, Yutaka KUBA, Chiaki DOMOTO, Daisuke UEYAMA, Yuichiro HAYASHI
  • Patent number: 9890470
    Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: February 13, 2018
    Assignee: KYOCERA Corporation
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto, Daisuke Ueyama, Yuichiro Hayashi
  • Publication number: 20180016703
    Abstract: A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step.
    Type: Application
    Filed: January 26, 2016
    Publication date: January 18, 2018
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA
  • Publication number: 20170370018
    Abstract: The method of the disclosure for producing a crystal is a method for producing a crystal of silicon carbide and includes a preparation step, a contact step, a first growth step, a heating step, a cooling step, and a second growth step. The preparation step includes preparing a seed crystal, a crucible, and a solution. The contact step includes bringing the seed crystal into contact with the solution. The first growth step includes heating the solution to a temperature in a first temperature range and pulling up the seed crystal with the temperature of the solution kept in the first temperature range to grow a crystal from the lower surface of the seed crystal. The heating step includes heating the solution. The cooling step includes cooling the solution. The second growth step includes further growing the crystal with the temperature of the solution kept in the first temperature range.
    Type: Application
    Filed: January 19, 2016
    Publication date: December 28, 2017
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA
  • Publication number: 20170342592
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.
    Type: Application
    Filed: July 13, 2017
    Publication date: November 30, 2017
    Applicant: KYOCERA Corporation
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA, Daisuke UEYAMA, Kouji MIYAMOTO, Yuuichiro HAYASHI
  • Patent number: 9777396
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.
    Type: Grant
    Filed: October 29, 2012
    Date of Patent: October 3, 2017
    Assignee: KYOCERA CORPORATION
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Publication number: 20160340795
    Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.
    Type: Application
    Filed: January 29, 2015
    Publication date: November 24, 2016
    Applicant: KYOCERA Corporation
    Inventors: Chiaki DOMOTO, Yutaka KUBA, Katsuaki MASAKI, Yuuichiro HAYASHI
  • Publication number: 20150211147
    Abstract: A crucible 1 according to an embodiment of the present invention is a crucible 1 which is used in a solution growth method for growing a crystal of silicon carbide on a lower surface 3B of a seed crystal 3 from a solution 2, by accommodating the solution 2 of silicon containing carbon in the crucible 1, by allowing the lower surface 3B of the seed crystal 3 to contact with the solution 2 from above, and by pulling the seed crystal 3 upward. The crucible is made of carbon and includes a solution adjustment member 4 which is fixed to an inner wall surface 1A so as to be positioned between a bottom surface 1B and a liquid surface of the solution 2 when the crucible 1 is used and which includes a through hole 4a overlapped with an inner side of the seed crystal 3 disposed above.
    Type: Application
    Filed: July 26, 2013
    Publication date: July 30, 2015
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto
  • Publication number: 20150068444
    Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.
    Type: Application
    Filed: April 26, 2013
    Publication date: March 12, 2015
    Applicant: KYOCERA CORPORATION
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto
  • Publication number: 20150020730
    Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.
    Type: Application
    Filed: January 30, 2013
    Publication date: January 22, 2015
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto, Daisuke Ueyama, Yuichiro Hayashi
  • Publication number: 20140299046
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.
    Type: Application
    Filed: October 29, 2012
    Publication date: October 9, 2014
    Applicant: KYOCERA Corporation
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Patent number: 8154483
    Abstract: Disclosed is an image display wherein luminance change due to change of the light-emitting device over time is compensated while suppressing affects of characteristics change in the drive transistor. Specifically disclosed is an image display comprising a plurality of pixels, wherein each pixel has a light-emitting device (OLED) which emits light when current is passed therethrough, a driver device (Td) for controlling light emission of the light-emitting device, and a control circuit (A) which is electrically connected to the light-emitting device and the driver device, and directly or indirectly detects the voltage applied to the light-emitting device at least during when the light-emitting device is emitting light and reflects the detection results to the driver device.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: April 10, 2012
    Assignee: LG Display Co., Ltd.
    Inventors: Shinji Takasugi, Osamu Tokuhiro, Kaoru Kusafuka, Yutaka Kuba
  • Patent number: 7755577
    Abstract: An electroluminescent device includes a first optical output part having a light-emitting layer emitting a light ray of a first color, a second optical output part having a light-emitting layer emitting a light ray of a second color, and a third optical output part having a light-emitting layer emitting a light ray of a third color, the colors being different from one another. Each of the optical output parts also has a resonator structure that resonates the light ray emitted from the light-emitting layer. In each optical output part, a resonant peak wavelength indicating a peak value of a transmission spectrum of light transmitted through the resonator structure in a direction perpendicular to a main surface of the light-emitting layer is on a longer or shorter wavelength side of an emission peak wavelength indicating a peak value of an emission spectrum of the light ray emitted by the light-emitting layer.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: July 13, 2010
    Assignee: Kyocera Corporation
    Inventors: Yutaka Kuba, Shinichi Abe
  • Publication number: 20090284511
    Abstract: Disclosed is an image display wherein luminance change due to change of the light-emitting device over time is compensated while suppressing affects of characteristics change in the drive transistor. Specifically disclosed is an image display comprising a plurality of pixels, wherein each pixel has a light-emitting device (OLED) which emits light when current is passed therethrough, a driver device (Td) for controlling light emission of the light-emitting device, and a control circuit (A) which is electrically connected to the light-emitting device and the driver device, and directly or indirectly detects the voltage applied to the light-emitting device at least during when the light-emitting device is emitting light and reflects the detection results to the driver device.
    Type: Application
    Filed: November 17, 2006
    Publication date: November 19, 2009
    Applicant: Kyocera Corporation
    Inventors: Shinji Takasugi, Osamu Tokuhiro, Kaoru Kusafuka, Yutaka Kuba
  • Publication number: 20070069996
    Abstract: An electroluminescent device includes a first optical output part having a light-emitting layer emitting a light ray of a first color, a second optical output part having a light-emitting layer emitting a light ray of a second color, and a third optical output part having a light-emitting layer emitting a light ray of a third color, the colors being different from one another. Each of the optical output parts also has a resonator structure that resonates the light ray emitted from the light-emitting layer. In each optical output part, a resonant peak wavelength indicating a peak value of a transmission spectrum of light transmitted through the resonator structure in a direction perpendicular to a main surface of the light-emitting layer is on a longer or shorter wavelength side of an emission peak wavelength indicating a peak value of an emission spectrum of the light ray emitted by the light-emitting layer.
    Type: Application
    Filed: September 25, 2006
    Publication date: March 29, 2007
    Applicant: Kyocera Display Institute Co., Ltd.
    Inventors: Yutaka Kuba, Shinichi Abe
  • Patent number: 6840685
    Abstract: An optical module includes a flat substrate, an electric connection terminal provided on the substrate, an optical element provided on the substrate, the optical element being connected with the electric connection terminal, and one end of a slender light transmitted fixed on the substrate and optically coupled with the optical element. The electric connection terminal is connectable with an external connector. The connector (or socket) is first mounted on an electric circuit board by reflow soldering or the like, and then the optical module having the slender light transmitter (or optical fiber) is electrically connected with the connector.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: January 11, 2005
    Assignee: Kyocera Corporation
    Inventor: Yutaka Kuba
  • Patent number: 6112001
    Abstract: An optical coupler wherein on one principal face of an Si single crystal substrate are formed, by etching, grooves for mounting optical fibers and a portion for mounting an optical element that is divided into plural parts, a base substrate, of which coefficient of thermal expansion is substantially identical to that of the optical element, is bonded onto the other principal face of the substrate, and the optical element is mounted on the portion for mounting an optical element.
    Type: Grant
    Filed: July 29, 1998
    Date of Patent: August 29, 2000
    Assignee: Kyocera Corporation
    Inventors: Yuji Kishida, Ryuji Komeda, Yutaka Kuba, Takahiro Matsubara