Patents by Inventor Yutaka Ohki

Yutaka Ohki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210367400
    Abstract: An electrode comprising a Ti layer and a Pt layer that are sequentially laid on a surface of a p-type semiconductor layer. Further, a thermal impedance per unit area of a contact portion that is in contact with the surface of the p-type semiconductor layer is equal to or smaller than 1.2×104 K/W·m2.
    Type: Application
    Filed: August 5, 2021
    Publication date: November 25, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Kazuyuki UMENO, Yutaka OHKI
  • Patent number: 11152762
    Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: October 19, 2021
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku Kaji, Yutaka Ohki
  • Publication number: 20210281039
    Abstract: A semiconductor-laser-chip-on-submount includes: a semiconductor laser chip that includes a semiconductor portion having an emitting facet and a rear facet along a longitudinal direction and emits laser light from the emitting facet; and a submount where the semiconductor laser chip is mounted. Further, a first distance between the submount and the emitting facet of the semiconductor portion is less than a second distance between the submount and the rear facet of the semiconductor portion.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 9, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku KAJI, Yutaka OHKI
  • Patent number: 10992102
    Abstract: A submount on which a semiconductor device is mounted and which is mounted on a base made of metal, the submount including: a substrate; a first coating layer formed on a first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate; and a second coating layer formed on a second surface, positioned on a side opposite to the first surface, of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate, in which a coating area of the second coating layer is smaller than a coating area of the first coating layer.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: April 27, 2021
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Ryuichiro Minato, Yutaka Ohki
  • Publication number: 20200366060
    Abstract: An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and ?>? and ?>0 are satisfied where ? is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and ? is the contact area included in a half region on the second facet side.
    Type: Application
    Filed: July 15, 2020
    Publication date: November 19, 2020
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Ryuichiro MINATO, Yutaka OHKI
  • Patent number: 10608407
    Abstract: A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: March 31, 2020
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Yutaka Ohki, Masafumi Tajima
  • Patent number: 10505346
    Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: December 10, 2019
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku Kaji, Yutaka Ohki
  • Patent number: 10439361
    Abstract: A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: October 8, 2019
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Yutaka Ohki, Kazuyuki Umeno, Ryuichiro Minato
  • Publication number: 20190020178
    Abstract: A laser apparatus includes light source elements outputting laser beams; a wavelength-selecting element disposed in an optical path of each of the laser beams and configured to cause light in a predetermined wavelength band to selectively transmit therethrough; and a partially transmissive-reflector that receives the light transmitted through the wavelength-selecting element, reflects a part of the input light toward the wavelength-selecting element, and causes its remainder to transmit therethrough.
    Type: Application
    Filed: August 3, 2018
    Publication date: January 17, 2019
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Atsushi OGURI, Etsuji KATAYAMA, Yuta ISHIGE, Toshio KIMURA, Yutaka OHKI, Hajime MORI
  • Publication number: 20190006818
    Abstract: A submount on which a semiconductor device is mounted and which is mounted on a base made of metal, the submount including: a substrate; a first coating layer formed on a first surface of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate; and a second coating layer formed on a second surface, positioned on a side opposite to the first surface, of the substrate and made of a material having a higher coefficient of thermal expansion than that of the substrate, in which a coating area of the second coating layer is smaller than a coating area of the first coating layer.
    Type: Application
    Filed: August 10, 2018
    Publication date: January 3, 2019
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Ryuichiro Minato, Yutaka Ohki
  • Publication number: 20180323579
    Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 8, 2018
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku KAJI, Yutaka OHKI
  • Publication number: 20180316156
    Abstract: A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.
    Type: Application
    Filed: June 21, 2018
    Publication date: November 1, 2018
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Yutaka OHKI, Masafumi TAJIMA
  • Publication number: 20170357067
    Abstract: A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.
    Type: Application
    Filed: August 8, 2017
    Publication date: December 14, 2017
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Yutaka OHKI, Kazuyuki UMENO, Ryuichiro MINATO
  • Patent number: 9627849
    Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: April 18, 2017
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hidehiro Taniguchi, Yutaka Ohki
  • Publication number: 20160181761
    Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
    Type: Application
    Filed: March 3, 2016
    Publication date: June 23, 2016
    Inventors: Hidehiro TANIGUCHI, Yutaka OHKI
  • Patent number: 9312443
    Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
    Type: Grant
    Filed: October 3, 2013
    Date of Patent: April 12, 2016
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hidehiro Taniguchi, Yutaka Ohki
  • Patent number: 9276374
    Abstract: To achieve stable multimode output even when driven by a drive current near a threshold value, provided is a laser apparatus comprising a semiconductor laser element; a wavelength selecting element that performs laser oscillation by forming a resonator between itself and a reflective surface of the semiconductor laser element to output oscillated laser light; and an optical system that is optically coupled to an emission surface of the semiconductor laser element with a coupling efficiency ? and inputs to the wavelength selecting element light output from the emission surface. The optical system causes a value that is correlated with a minimum light output within a linear light output region in which light output is linear with respect to an injection current injected to the semiconductor laser element to be less than this value occurring when the coupling efficiency ? is at a maximum.
    Type: Grant
    Filed: November 13, 2013
    Date of Patent: March 1, 2016
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Hidehiro Taniguchi, Yutaka Ohki
  • Publication number: 20150146757
    Abstract: A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit.
    Type: Application
    Filed: February 5, 2015
    Publication date: May 28, 2015
    Inventors: Yutaka OHKI, Satoshi ARAKAWA, Shunsuke OKUYAMA, Masaki FUNABASHI, Junji YOSHIDA, Hidehiro TANIGUCHI
  • Publication number: 20140314113
    Abstract: A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow portion has a uniform width.
    Type: Application
    Filed: July 2, 2014
    Publication date: October 23, 2014
    Inventors: Yutaka OHKI, Satoshi ARAKAWA, Shunsuke OKUYAMA, Masaki FUNABASHI, Junji YOSHIDA, Hidehiro TANIGUCHI
  • Patent number: 8811447
    Abstract: A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow potion has a uniform width.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: August 19, 2014
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Yutaka Ohki, Satoshi Arakawa, Shunsuke Okuyama, Masaki Funabashi