Patents by Inventor Yutaka Onishi

Yutaka Onishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10998696
    Abstract: A vertical cavity surface emitting laser includes a first laminate including first semiconductor layers having a first Al composition, and second semiconductor layers having a second Al composition greater than the first Al composition; a current confinement structure including a current aperture and a current blocker; a first compound semiconductor layer adjacent to the current confinement structure; and a second compound semiconductor layer adjacent to the first laminate and the first compound semiconductor layer. The first compound semiconductor layer has a first aluminum profile changing monotonously in a direction from the first laminate to the current confinement structure from a first minimum Al composition within a range greater than the first Al composition and smaller than the second Al composition to a first maximum Al composition. The second compound semiconductor layer has an Al composition greater than the first Al composition and smaller than the first maximum Al composition.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: May 4, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Natsumi Kaneko, Yutaka Onishi, Takeshi Aoki
  • Patent number: 10847950
    Abstract: A vertical cavity surface emitting laser includes: a supporting base; and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately with each of the first semiconductor layers having a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately with each of the first layers having a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: November 24, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yutaka Onishi
  • Patent number: 10819083
    Abstract: A vertical cavity surface-emitting laser including: a substrate having a main surface; and a post structure mounted on the main surface. The post structure includes an active layer and a carrier confinement structure. The carrier confinement structure includes a first region and a second region having a higher resistivity than the first region. The first region has an edge, and a first to a third reference line segments. A first length of the first reference line segment is longest among lengths of line segments joining any two points on the edge and extending in a direction of the III-V group semiconductor. The first length is greater than a sum of a second length of the second reference line segment and a third length of the third reference line segment. The third length is smaller than the second length and is zero or more.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: October 27, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yutaka Onishi, Hiroyuki Yoshinaga, Rei Tanaka
  • Publication number: 20200099195
    Abstract: A vertical cavity surface emitting laser includes a first laminate including first semiconductor layers having a first Al composition, and second semiconductor layers having a second Al composition greater than the first Al composition; a current confinement structure including a current aperture and a current blocker; a first compound semiconductor layer adjacent to the current confinement structure; and a second compound semiconductor layer adjacent to the first laminate and the first compound semiconductor layer. The first compound semiconductor layer has a first aluminum profile changing monotonously in a direction from the first laminate to the current confinement structure from a first minimum Al composition within a range greater than the first Al composition and smaller than the second Al composition to a first maximum Al composition. The second compound semiconductor layer has an Al composition greater than the first Al composition and smaller than the first maximum Al composition.
    Type: Application
    Filed: September 13, 2019
    Publication date: March 26, 2020
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Natsumi KANEKO, Yutaka ONISHI, Takeshi AOKI
  • Publication number: 20190372301
    Abstract: A vertical cavity surface-emitting laser including: a substrate having a main surface; and a post structure mounted on the main surface. The post structure includes an active layer and a carrier confinement structure. The carrier confinement structure includes a first region and a second region having a higher resistivity than the first region. The first region has an edge, and a first to a third reference line segments. A first length of the first reference line segment is longest among lengths of line segments joining any two points on the edge and extending in a [1-10] direction of the III-V group semiconductor. The first length is greater than a sum of a second length of the second reference line segment and a third length of the third reference line segment. The third length is smaller than the second length and is zero or more.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yutaka ONISHI, Hiroyuki YOSHINAGA, Rei TANAKA
  • Publication number: 20190067908
    Abstract: A vertical cavity surface emitting laser includes: a supporting base: and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately arranged. The first semiconductor layers each have a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately arranged. The first layers each have a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 28, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yutaka Onishi
  • Publication number: 20180278022
    Abstract: A surface-emitting semiconductor laser includes a stacked semiconductor layer on a substrate; and a post including a current constriction structure including an oxide portion and a semiconductor portion, and an active layer. The post includes a peripheral portion and first to fourth portions. The oxide portion is located in the second and fourth portions, and the semiconductor portion is located in the first and third portions. The post includes first to fourth level parts that are sequentially arranged in a direction from the substrate to the stacked semiconductor layer. The active layer and the current constriction structure are located in the first and second level parts, respectively. The peripheral portion includes a first region having a first hydrogen concentration. The second level part includes a second region having a second hydrogen concentration. The first and second hydrogen concentrations are larger than that of the first portion.
    Type: Application
    Filed: March 23, 2017
    Publication date: September 27, 2018
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Nein-Yi LI, LI WANG, Yutaka ONISHI
  • Publication number: 20180198184
    Abstract: A cable for transmitting electromagnetic waves is disclosed. The cable is a cable for transmitting electromagnetic waves, and includes a core extending along a longitudinal direction of the cable, the core including a dielectric, a sleeve extending along the longitudinal direction of the cable while surrounding the core so as to provide a cavity between the core and the sleeve, the sleeve including a dielectric, and a support that supports the core in the cavity in the sleeve, the support including a dielectric.
    Type: Application
    Filed: January 11, 2017
    Publication date: July 12, 2018
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yutaka ONISHI
  • Patent number: 9395487
    Abstract: Provided are an optical element and a wavelength monitor capable of detecting a wavelength with high accuracy and at high speed while suppressing a size. The optical element includes: a branch waveguide section configured to branch an input light beam and generate two outputs routed via paths having mutually different optical path lengths; and an optical synthesis section configured to synthesize the two outputs and output two optical signals having different light intensities with regards to a wavelength of the input light beam and exhibiting a mutual phase difference.
    Type: Grant
    Filed: September 23, 2014
    Date of Patent: July 19, 2016
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Katsumi Uesaka, Yutaka Onishi
  • Patent number: 9366820
    Abstract: A coherent mixer includes a multi-mode waveguide that has a side surface and an end; a waveguide group including a plurality of semiconductor regions connected to the end; a first semiconductor region that has a side surface extending substantially parallel to the side surface of the multi-mode waveguide; and an external semiconductor region having a side surface extending substantially parallel to an edge of the waveguide group. The side surface of the semiconductor region is spaced apart from the side surface of the multi-mode waveguide by a distance smaller than or equal to a reference value. The side surface of the external semiconductor region is spaced apart from the edge of the waveguide group by a distance smaller than or equal to the reference value. The reference value is a maximum value of distances between arbitrary adjacent semiconductor regions in the waveguide group.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: June 14, 2016
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Naoko Konishi, Yutaka Onishi
  • Patent number: 9279939
    Abstract: A spot-size converter includes a cladding layer having a principal surface; a first core layer disposed on the principal surface and having a light input/output portion and a first transition portion having a width W1, the light input/output portion being coupled to the first transition portion and having a width that monotonously decreases in a first direction from the light input/output portion toward the first transition portion; and a second core layer disposed on the principal surface, the second core layer having a second transition portion and a propagation portion coupled to the second transition portion, the second transition portion having a width W2 . The first core layer has a refractive index between refractive indices of the second core layer and the cladding layer. The first transition portion and the second transition portion are disposed with a gap therebetween and optically coupled to each other. A ratio (W1/W2) of the width W1 to the width W2 monotonously decreases in the first direction.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: March 8, 2016
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yutaka Onishi
  • Patent number: 9164237
    Abstract: A coherent mixer includes a substrate including a principal surface, the principal surface having a first area and a second area; a multi-mode interference device provided on the first area of the substrate; a light-receiving device provided on the second area of the substrate, the light-receiving device including a plurality of waveguide-type photodiodes; a first input waveguide optically coupled to the multi-mode interference device; a second input waveguide optically coupled to the multi-mode interference device; a plurality of optical waveguides optically coupling the multi-mode interference device to the plurality of waveguide-type photodiodes; and a protective layer covering the first and second areas of the substrate, the protective layer covering the plurality of waveguide-type photodiodes. The protective layer has an opening in the first area of the substrate. In addition, the multi-mode interference device has a surface that is at least partially exposed at the opening of the protective layer.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: October 20, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yutaka Onishi
  • Patent number: 9122003
    Abstract: A semiconductor optical device includes a light receiving device; an optical waveguide having a mesa structure, the optical waveguide including first, second, third, and fourth waveguide portions; and a passivation layer provided on a side surface of the light receiving device. The mesa structure in the second waveguide portion has a width increasing along the waveguide axis, and the mesa structure in the third waveguide portion has a width decreasing along the waveguide axis. The second waveguide portion includes first and second regions, the first region being optically coupled to the first waveguide portion and the second region being optically coupled to the third waveguide portion. The passivation layer is provided on side surfaces of the mesa structure in the second region, the third waveguide portion, and the fourth waveguide portion. The mesa structures in the first waveguide portion and the first region have side surfaces without the passivation layer.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: September 1, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yutaka Onishi
  • Patent number: 9069194
    Abstract: A polarization control device includes a MMI device having primary-side and secondary-side end-faces; a first phase shifter optically coupled to a first port in the primary-side end-face; a first optical waveguide optically coupled via the first phase shifter to the first port in the primary-side end-face; a second optical waveguide optically coupled to a second port in the primary-side end-face; and a tapered waveguide optically coupled to a first port in the secondary-side end-face. The first and second ports in the primary-side end-face are located on first and second axes, respectively. The first port in the secondary-side end-face is located on a third axis located between the first and second axes. The first, second, and third axes extend in a direction from the primary-side end-face to the secondary-side end-face. The tapered waveguide has a width decreasing in a direction from one end to the other end of the tapered waveguide.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: June 30, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yutaka Onishi
  • Publication number: 20150085292
    Abstract: Provided are an optical element and a wavelength monitor capable of detecting a wavelength with high accuracy and at high speed while suppressing a size. The optical element includes: a branch waveguide section configured to branch an input light beam and generate two outputs routed via paths having mutually different optical path lengths; and an optical synthesis section configured to synthesize the two outputs and output two optical signals having different light intensities with regards to a wavelength of the input light beam and exhibiting a mutual phase difference.
    Type: Application
    Filed: September 23, 2014
    Publication date: March 26, 2015
    Inventors: Katsumi UESAKA, Yutaka ONISHI
  • Publication number: 20140334775
    Abstract: A coherent mixer includes a multi-mode waveguide that has a side surface and an end; a waveguide group including a plurality of semiconductor regions connected to the end; a first semiconductor region that has a side surface extending substantially parallel to the side surface of the multi-mode waveguide; and an external semiconductor region having a side surface extending substantially parallel to an edge of the waveguide group. The side surface of the semiconductor region is spaced apart from the side surface of the multi-mode waveguide by a distance smaller than or equal to a reference value. The side surface of the external semiconductor region is spaced apart from the edge of the waveguide group by a distance smaller than or equal to the reference value. The reference value is a maximum value of distances between arbitrary adjacent semiconductor regions in the waveguide group.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 13, 2014
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD
    Inventors: Naoko Konishi, Yutaka ONISHI
  • Publication number: 20140126855
    Abstract: A polarization control device includes a MMI device having primary-side and secondary-side end-faces; a first phase shifter optically coupled to a first port in the primary-side end-face; a first optical waveguide optically coupled via the first phase shifter to the first port in the primary-side end-face; a second optical waveguide optically coupled to a second port in the primary-side end-face; and a tapered waveguide optically coupled to a first port in the secondary-side end-face. The first and second ports in the primary-side end-face are located on first and second axes, respectively. The first port in the secondary-side end-face is located on a third axis located between the first and second axes. The first, second, and third axes extend in a direction from the primary-side end-face to the secondary-side end-face. The tapered waveguide has a width decreasing in a direction from one end to the other end of the tapered waveguide.
    Type: Application
    Filed: November 6, 2013
    Publication date: May 8, 2014
    Applicant: Sumitomo Electric Industries, LTD.
    Inventor: Yutaka ONISHI
  • Patent number: 8718412
    Abstract: A DP QPSK optical modulator includes an input port; an optical branching unit; an optical modulation unit having first through fourth Mach-Zehnder interferometers; a first phase-change unit connected to the third Mach-Zehnder interferometer; a second phase-change unit connected to the fourth Mach-Zehnder interferometer; an optical multiplexer; and a multimode interference coupler including a multimode interference waveguide, first through third input ports, and an output port having a taper-shaped waveguide. The first Mach-Zehnder interferometer is connected to the first input port. One end of the optical multiplexer is connected to the second Mach-Zehnder interferometer and the third Mach-Zehnder interferometer via the first phase change unit. The other end of the optical multiplexer is connected to the second input port. The fourth Mach-Zehnder interferometer is connected to the third input port via the second phase-change unit.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: May 6, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Yutaka Onishi
  • Publication number: 20140023314
    Abstract: A semiconductor optical device includes a light receiving device; an optical waveguide having a mesa structure, the optical waveguide including first, second, third, and fourth waveguide portions; and a passivation layer provided on a side surface of the light receiving device. The mesa structure in the second waveguide portion has a width increasing along the waveguide axis, and the mesa structure in the third waveguide portion has a width decreasing along the waveguide axis. The second waveguide portion includes first and second regions, the first region being optically coupled to the first waveguide portion and the second region being optically coupled to the third waveguide portion. The passivation layer is provided on side surfaces of the mesa structure in the second region, the third waveguide portion, and the fourth waveguide portion. The mesa structures in the first waveguide portion and the first region have side surfaces without the passivation layer.
    Type: Application
    Filed: July 2, 2013
    Publication date: January 23, 2014
    Inventor: Yutaka ONISHI
  • Patent number: 8617911
    Abstract: The method includes the steps of preparing an epitaxial wafer by forming a multilayer semiconductor structure on a main surface of a substrate; forming stripe electrodes and bonding pads on the multilayer semiconductor structure with the bonding pads being respectively electrically connected to the stripe electrodes; forming a projection portion on the multilayer semiconductor structure; forming laser diode (LD) bars by cutting the epitaxial wafer; arranging the LD bars on a support surface such that a side surface thereof is oriented normal to the support surface, and disposing spacers between the LD bars; and forming a coating film on the side surface. The projection portion has a height, measured from the main surface of the substrate, greater than a height of the stripe electrodes. Furthermore, the laser diode bar has at least one projection portion.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: December 31, 2013
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Yutaka Onishi