Patents by Inventor Yutaka Tajima

Yutaka Tajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10176987
    Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: January 8, 2019
    Assignee: SHOWA DENKO K.K.
    Inventors: Akira Miyasaka, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
  • Publication number: 20170233893
    Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).
    Type: Application
    Filed: May 4, 2017
    Publication date: August 17, 2017
    Applicant: SHOWA DENKO K.K.
    Inventors: Akira MIYASAKA, Yutaka TAJIMA, Yoshiaki KAGESHIMA, Daisuke MUTO, Kenji MOMOSE
  • Patent number: 9679767
    Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: June 13, 2017
    Assignee: SHOWA DENKO K.K.
    Inventors: Akira Miyasaka, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
  • Publication number: 20160208414
    Abstract: The method for producing an SiC epitaxial wafer according to the present invention includes: a step of vacuum baking a coated carbon-based material member at a degree of vacuum of 2.0×10?3 Pa or less in a dedicated vacuum baking furnace; a step of installing the coated carbon-based material member in an epitaxial wafer manufacturing apparatus; and a step of placing an SiC substrate in the epitaxial wafer manufacturing apparatus and epitaxially growing an SiC epitaxial film on the SiC substrate.
    Type: Application
    Filed: August 13, 2014
    Publication date: July 21, 2016
    Applicant: SHOWA DENKO K.K.
    Inventors: Michiya ODAWARA, Yutaka TAJIMA, Daisuke MUTO, Kenji MOMOSE
  • Publication number: 20150162187
    Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.
    Type: Application
    Filed: June 19, 2013
    Publication date: June 11, 2015
    Applicant: SHOWA DENKO K.K.
    Inventors: Akira Miyasaka, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
  • Publication number: 20140339571
    Abstract: A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm?1 or less.
    Type: Application
    Filed: July 30, 2014
    Publication date: November 20, 2014
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenji MOMOSE, Yutaka TAJIMA, Yasuyuki SAKAGUCHI, Michiya ODAWARA, Yoshihiko MIYASAKA
  • Patent number: 8823015
    Abstract: Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: September 2, 2014
    Assignee: Showa Denko K.K.
    Inventors: Kenji Momose, Yutaka Tajima, Yasuyuki Sakaguchi, Michiya Odawara, Yoshihiko Miyasaka
  • Patent number: 8714136
    Abstract: In a direct fuel-injection engine equipped with a pentroof-shaped piston, cross-sectional shapes containing a piston central axis (Lp) of a cavity recessed in a central part of the piston having a top face with the height varying in the circumferential direction are set so as to be basically identical at each position in the circumferential direction (see broken line).
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: May 6, 2014
    Assignee: Honda Motor Co., Ltd.
    Inventors: Kenichiro Ikeya, Nobuhiko Sasaki, Hiroshi Sono, Yukihisa Yamaya, Akihiro Yamaguchi, Yoshimasa Kaneko, Goichi Katayama, Yutaka Tajima
  • Patent number: 8627798
    Abstract: A direct fuel-injection engine includes a piston, a cavity recessed in a central part of a top face of the piston, and a fuel injector. At a main injection collision point of a fuel-injection axis when main injection is performed while the piston is near top dead center, a main injection collision angle formed between its tangent and the fuel-injection axis is set at an obtuse angle. Fuel colliding with the main injection collision point is deflected towards a cavity open end side. At a secondary injection collision point of the fuel-injection axis when performing secondary injection with the piston is further from top dead center, a secondary injection collision angle formed between its tangent and the fuel-injection axis is set at one of a right angle and an acute angle. Fuel colliding with the secondary injection collision point is deflected primarily in the circumferential direction of the cavity.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: January 14, 2014
    Assignee: Honda Motor Co., Ltd.
    Inventors: Akihiro Yamaguchi, Yoshimasa Kaneko, Yukihisa Yamaya, Yutaka Tajima, Kenichiro Ikeya, Goichi Katayama, Nobuhiko Sasaki, Hiroshi Sono
  • Patent number: 8474431
    Abstract: In a cross section in which squish flow from an outer peripheral part of a piston (13) toward a cavity (25) is large due to a width (W2) of a squish area (SA) being large and a squish clearance (C2) being small, a collision angle (?2) at which a fuel injection axis (Li2) collides with the cavity (25) is made large, whereas in a cross section in which squish flow is small due to the width of the squish area (SA) being small and the squish clearance being large, the collision angle at which a fuel injection axis collides with the cavity (25) is made small. This enables a tendency for fuel to flow out to the exterior of the cavity (25) in a cross section where the squish flow is small to be weakened, and a tendency for fuel to flow out to the exterior of the cavity (25) in a cross section where the squish flow is large to be strengthened, thereby making the conditions in which fuel and air are mixed uniform throughout the entire region of the cavity (25).
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: July 2, 2013
    Assignee: Honda Motor Co., Ltd.
    Inventors: Hiroshi Sono, Tatsuya Uchimoto, Yukihisa Yamaya, Kenichiro Ikeya, Yutaka Tajima, Mitsuhiro Shibata, Nobuhiko Sasaki
  • Patent number: 8418669
    Abstract: In an internal combustion engine having a pair of balancer shafts (53, 54), an engine torque is transmitted from a crank gear (28) to an oil pump gear (74) on a drive shaft (73) of an oil pump (71) via a first idler gear (84) and the first balancer shaft gear (64). The engine torque is also transmitted to a fuel pump (72) from the crank gear to a fuel pump gear (78) via the first idler gear and a second idler gear (86), and to the second balancer shaft gear (67) via the first idler gear and second idler gear. Alternatively, the engine torque may be transmitted to the fuel pump from the crank gear to the fuel pump gear via the first idler gear, second balancer shaft gear and second idler gear. As the oil pump gear is actuated by the crank gear via the first idler gear, the oil pump gear is not subjected to the loading caused by the balancer shaft, and hence can be made of a compact and light-weight gear.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: April 16, 2013
    Assignee: Honda Motor Co., Ltd.
    Inventors: Goichi Katayama, Yoshihiro Fujiyoshi, Yutaka Tajima, Shoichi Yamamoto
  • Publication number: 20120146056
    Abstract: Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.
    Type: Application
    Filed: August 25, 2010
    Publication date: June 14, 2012
    Applicant: SHOWA DENKO K.K.
    Inventors: Kenji Momose, Yutaka Tajima, Yasuyuki Sakaguchi, Michiya Odawara, Yoshihiko Miyasaka
  • Patent number: 8056532
    Abstract: In a direct fuel injection diesel engine having a piston with a pentroof-shaped top face, with regard to a pentroof-shaped piston (13) with a cavity (25) recessed in a central part of the top face, a radial width S of a squish area (26) formed between an outer peripheral part of the top face and a lower face of a cylinder head (14) changes in the circumferential direction of the piston (13). By setting a squish clearance H large for a portion where the radial width S of the squish area (26) is large and setting the squish clearance H small for a portion where the radial width S of the squish area (26) is small, more specifically, by setting S/H so that it is constant in the circumferential direction, it is possible to make the strength of the squish flow uniform in the circumferential direction of the piston, thus promoting the mixing of air and fuel and reducing harmful exhaust components.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: November 15, 2011
    Assignee: Honda Motor Co., Ltd.
    Inventors: Mitsuhiro Shibata, Hiroshi Sono, Nobuhiko Sasaki, Tatsuya Uchimoto, Kenichiro Ikeya, Yutaka Tajima, Yukihisa Yamaya
  • Publication number: 20110209680
    Abstract: In an internal combustion engine having a pair of balancer shafts (53, 54), an engine torque is transmitted from a crank gear (28) to an oil pump gear (74) on a drive shaft (73) of an oil pump (71) via a first idler gear (84) and the first balancer shaft gear (64). The engine torque is also transmitted to a fuel pump (72) from the crank gear to a fuel pump gear (78) via the first idler gear and a second idler gear (86), and to the second balancer shaft gear (67) via the first idler gear and second idler gear. Alternatively, the engine torque may be transmitted to the fuel pump from the crank gear to the fuel pump gear via the first idler gear, second balancer shaft gear and second idler gear. As the oil pump gear is actuated by the crank gear via the first idler gear, the oil pump gear is not subjected to the loading caused by the balancer shaft, and hence can be made of a compact and light-weight gear.
    Type: Application
    Filed: February 10, 2011
    Publication date: September 1, 2011
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Goichi KATAYAMA, Yoshihiro Fujiyoshi, Yutaka Tajima, Shoichi Yamamoto
  • Patent number: 7992536
    Abstract: In a direct fuel injection diesel engine equipped with a pentroof-shaped piston, when fuel is injected into a cavity (25) recessed in a central part of a piston (13), for which the height of a top face changes in the circumferential direction, from a fuel injection point (Oinj) of a fuel injector disposed on a piston central axis along a plurality of fuel injection axes (Li1,Li2), if a cross-section of the cavity (25) passing along the fuel injection axis (Li1,Li2) is defined as a fuel injection cross-section (Sn), a cross-sectional shape (see shaded portion) of the cavity (25) defined by first to third specific points (An, Bn, Cn) on the fuel injection cross-section (Sn) is set so as to be substantially equal for each fuel injection cross-section (Sn). By so doing, the conditions in which fuel and air are mixed in each fuel injection cross-section (Sn) can be made uniform, the engine output can be improved, and harmful exhaust substances can be reduced.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: August 9, 2011
    Assignee: Honda Motor Co., Ltd.
    Inventors: Kenichiro Ikeya, Yukihisa Yamaya, Nobuhiko Sasaki, Tatsuya Uchimoto, Yutaka Tajima, Mitsuhiro Shibata, Hiroshi Sono
  • Patent number: 7861685
    Abstract: In a direct fuel injection diesel engine equipped with a pentroof-shaped piston, a collision angle (?) at which fuel injected in a direction in which the height of the top face of a piston (13) is high collides with a cavity (25) is set larger than a collision angle (?) at which fuel injected in a direction in which the height of the top face of the piston (13) is low collides with the cavity (25).
    Type: Grant
    Filed: June 7, 2007
    Date of Patent: January 4, 2011
    Assignee: Honda Motor Co., Ltd.
    Inventors: Hiroshi Sono, Nobuhiko Sasaki, Tatsuya Uchimoto, Kenichiro Ikeya, Yutaka Tajima, Mitsuhiro Shibata, Yukihisa Yamaya
  • Publication number: 20100258078
    Abstract: In a direct fuel-injection engine equipped with a pentroof-shaped piston, cross-sectional shapes containing a piston central axis (Lp) of a cavity recessed in a central part of the piston having a top face with the height varying in the circumferential direction are set so as to be basically identical at each position in the circumferential direction (see broken line).
    Type: Application
    Filed: December 12, 2008
    Publication date: October 14, 2010
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Kenichiro Ikeya, Nobuhiko Sasaki, Hiroshi Sono, Yukihisa Yamaya, Akihiro Yamaguchi, Yoshimasa Kaneko, Goichi Katayama, Yutaka Tajima
  • Publication number: 20100186709
    Abstract: In a direct fuel injection diesel engine equipped with a pentroof-shaped piston, when fuel is injected into a cavity (25) recessed in a central part of a piston (13), for which the height of a top face changes in the circumferential direction, from a fuel injection point (Oinj) of a fuel injector disposed on a piston central axis along a plurality of fuel injection axes (Li1,Li2), if a cross-section of the cavity (25) passing along the fuel injection axis (Li1,Li2) is defined as a fuel injection cross-section (Sn), a cross-sectional shape (see shaded portion) of the cavity (25) defined by first to third specific points (An, Bn, Cn) on the fuel injection cross-section (Sn) is set so as to be substantially equal for each fuel injection cross-section (Sn). By so doing, the conditions in which fuel and air are mixed in each fuel injection cross-section (Sn) can be made uniform, the engine output can be improved, and harmful exhaust substances can be reduced.
    Type: Application
    Filed: April 11, 2007
    Publication date: July 29, 2010
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Kenichiro Ikeya, Yukihisa Yamaya, Nobuhiko Sasaki, Tatsuya Uchimoto, Yutaka Tajima, Mitsuhiro Shibata, Hiroshi Sono
  • Publication number: 20100147260
    Abstract: A direct fuel-injection engine includes a piston, a cavity recessed in a central part of a top face of the piston, and a fuel injector. At a main injection collision point of a fuel-injection axis when main injection is performed while the piston is near top dead center, a main injection collision angle formed between its tangent and the fuel-injection axis is set at an obtuse angle. Fuel colliding with the main injection collision point is deflected towards a cavity open end side. At a secondary injection collision point of the fuel-injection axis when performing secondary injection with the piston is further from top dead center, a secondary injection collision angle formed between its tangent and the fuel-injection axis is set at one of a right angle and an acute angle. Fuel colliding with the secondary injection collision point is deflected primarily in the circumferential direction of the cavity.
    Type: Application
    Filed: November 17, 2009
    Publication date: June 17, 2010
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Akihiro YAMAGUCHI, Yoshimasa KANEKO, Yukihisa YAMAYA, Yutaka TAJIMA, Kenichiro IKEYA, Goichi KATAYAMA, Nobuhiko SASAKI, Hiroshi SONO
  • Publication number: 20100108022
    Abstract: In a cross section in which squish flow from an outer peripheral part of a piston (13) toward a cavity (25) is large due to a width (W2) of a squish area (SA) being large and a squish clearance (C2) being small, a collision angle (?2) at which a fuel injection axis (Li2) collides with the cavity (25) is made large, whereas in a cross section in which squish flow is small due to the width of the squish area (SA) being small and the squish clearance being large, the collision angle at which a fuel injection axis collides with the cavity (25) is made small. This enables a tendency for fuel to flow out to the exterior of the cavity (25) in a cross section where the squish flow is small to be weakened, and a tendency for fuel to flow out to the exterior of the cavity (25) in a cross section where the squish flow is large to be strengthened, thereby making the conditions in which fuel and air are mixed uniform throughout the entire region of the cavity (25).
    Type: Application
    Filed: April 3, 2008
    Publication date: May 6, 2010
    Inventors: Hiroshi Sono, Tatsuya Uchimoto, Yukihisa Yamaya, Kenichiro Ikeya, Yutaka Tajima, Mitsuhiro Shibata, Nobuhiko Sasaki