Abstract: A abstract polishing apparatus has a substrate carrier a substrate and an abrasive member having a polishing surface. The surface is slidingly engaged with the substrate in order to effect polishing. The dressing device includes a light source when generating light rays for irradiating the polishing surface of the abrasive member, whereby dressing the polishing surface. A temperature control system control the temperature of the polishing surface of the abrasive member by sensing the temperature of the polishing surface with the temperature sensor. Mechanical dressing of the polishing surface, in addition to dressing by radiation of the polishing surface, may also be employed in order to flatten the entire polishing surface. The abrasive member preferably includes an abrasive particles, a binder and a photophilic for promoting the dressing of the polishing surface by light rays.

Abstract: A method is provided for polishing a device wafer, which has projections and depressions formed on a surface thereof, with the use of an abrading plate. The method comprises polishing the device wafer while supplying a surface active agent and/or while dressing a surface of the abrading plate. This method for polishing the device wafer can always exhibit a self-stop function, without being restricted by the composition of the abrading plate, and without being restricted by the type of the substrate.

Abstract: A polishing method and apparatus can concurrently establish a stable removal rate, a small step height reduction rate, and reduction of detects on the polished surface for various kinds of polished subjects, while providing less environmental problems and requiring less processing costs. The method for polishing a surface of a semiconductor device wafer comprises first polishing a surface of the semiconductor wafer by a first fixed abrasive polishing method; and finish polishing the polished surface of the semiconductor wafer by a second fixed abrasive polishing method different from the first fixed abrasive polishing method.

Abstract: A wafer is pressed against a fixed abrasive and brought into sliding contact with the fixed abrasive. Thus, the wafer is polished. A surface of the fixed abrasive is dressed so as to generate free abrasive particles thereon. A liquid or a gas, composed of a mixture of liquid or inert gas and pure water or chemical liquid, is ejected onto the surface of the fixed abrasive during or after the dressing process.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: A polishing apparatus comprises a polishing member that has a wide stable polishing range to perform effective polishing, even if a rotation axis moves away from the edge of a workpiece. A polishing member holder holds the polishing member, and a workpiece holder holds the workpiece to be polished. A drive device produces a relative sliding motion between the polishing member and the workpiece. At least one holder of either the polishing member holder or the workpiece holder is rotatable about a rotation axis and is tiltable with respect to other holder. Such one holder is provided with a pressing mechanism to stabilize orientation or desired posture of the one holder by applying an adjusting pressure to the one holder at a location away from the rotation axis.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: A polishing apparatus is used for polishing a plate-like workpiece, such as a semiconductor wafer or a glass substrate. The polishing apparatus has a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a dresser for dressing the polishing surface by pressing a desired position of the polishing surface.

Abstract: A polishing tool uses a fixed abrasive polisher which can perform polishing of an object with good surface accuracy for a long period of time. A mixture of abrasive grains, having an average particle diameter of 0.01 to 2.0 &mgr;m, and comprising at least one of cerium oxide, manganese oxide, titanium oxide, zirconia, silica, and iron oxide, and polyimide resin particles or phenolic resin particles having an average particle diameter of 0.1 to 20 &mgr;m is heated at a temperature of 120 to 250° C. under a pressure of 9,800 to 49,000 kPa (100 to 500 kg/cm2) to mold the mixture into a desired shape. This can provide a polisher 4 having abrasive grains dispersed in a thermosetting resin, and having abrasive grains of 20 to 60% by volume, a binder of 30 to 50% by volume, pores of not more than 40% by volume, and a Rockwell hardness of not less than 30 in terms of the H scale. This polisher is attached to a surface plate by an epoxy adhesive to produce a polishing tool.

Abstract: The present invention provides an abrading plate having self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. A method of using the abrading plate is also provided. The present invention relates to an abrading plate that produces a flat and mirror polished surface on an object with an abrading plate comprised by abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers; a binder material; and a given volume of porosity, wherein a ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10˜40 by volume.

Abstract: A polishing apparatus polishes a workpiece to a planar mirror finish stably, and is prevented from being vibrated while polishing is carried out. The polishing apparatus has a holding member for holding the workpiece, and a bearing supporting an outer circumferential surface of the holding member, for suppressing vibrations transmitted to the holder while the workpiece is being polished.

Abstract: The object of the present invention is to provide a polishing apparatus that can supply a polishing solution having a non-varying distribution of abrading particles sizes at a steady rate. An apparatus (20) for delivering a polishing solution to a polishing apparatus (22) is disclosed. The apparatus (20) comprises: a solution passage for transporting the polishing solution; and an ultrasonic vibrator (72) being provided in at least one location of the solution passage.

Abstract: The object of the present invention is to provide a polishing apparatus having a grinding member in a compact design that can provide high efficiency for both polishing and dressing operations, and prevents tilting of the grinding member even if the rotation axis thereof is moved away from the outer periphery of the object. A polishing apparatus for an object, comprises: an object holder for holding an object to be polished, such that a surface of the object to be polished faces upward; a dresser disk holder for holding a dresser disk for dressing, such that a dressing surface thereof faces upward; and a grinding member for polishing the object, and for being dressed by the dresser disk, by pressing and sliding the grinding member relative to the object and the dresser disk.

Abstract: A polishing apparatus is used for polishing a plate-like workpiece, such as a semiconductor wafer or a glass substrate. The polishing apparatus has a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a dresser for dressing the polishing surface by pressing a desired position of the polishing surface.

Abstract: An object of the present invention is to provide a polishing apparatus with a grinding plate that can easily and reliably be installed on and detached from a turntable. The polishing apparatus has a grinding plate tool, fixedly mounted on the turntable, which includes the grinding plate, and a top ring for holding a workpiece to be polished and pressing the workpiece against the grinding plate in sliding contact therewith for polishing a surface of the workpiece to a flat, mirror finish. A clamping mechanism is mounted in the turntable for fixing an outer circumferential flange of the grinding plate tool to the turntable.

Abstract: A polishing tool applicable to various types of polishing objects is provided that enables to stabilize the polishing speed and to obtain superior surface details while reducing the formation of defects such as scratches on the polished surface. The tool is operated by pressing and sliding on the polishing object in a swinging motion and the surface is polished with abrasive particles imbedded in a matrix comprised primarily of a thermoplastic resin such as butadiene styrene, polybutadiene or MBS resin of acryl rubber group. The polishing tool includes fixed-abrasive polishing tool that contains abrasive particles within the polishing tool, or a polishing pad containing non-fixed-abrasive particles.

Abstract: An abrading plate has self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10˜40 by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions to obtain a flat surface.

Abstract: A polisher includes a turntable with a polishing surface provided on the top surface of the turntable, an article carrier for holding an article to be polished in such a manner that the article is brought into contact with the polishing surface to polish the article, and a slurry dispenser for receiving and dispensing slurry to the polishing surface. The dispenser includes a slurry dispensing member for dispensing slurry to the polishing surface. The slurry dispensing member includes a contact surface facing and substantially contacting the polishing surface, and a slurry dispensing opening including at least one hole provided in the contact surface to dispense the slurry to the polishing surface therethrough. The opening is sized in such a manner that the opening covers substantially an area of the polishing surface which is to be brought into engagement with the article by relative movement between the article and the polishing surface.

Abstract: A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method comprises polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.