Abstract: A carbon nanotube composite includes a carbon nanotube bundle including a plurality of carbon nanotubes that are bundled, each of the plurality of carbon nanotubes having a single-walled or multi-walled structure, and a group of elements of other type introduced in an aligned manner into a gap portion between the plurality of carbon nanotubes. In the carbon nanotube bundle, a ratio of the number of carbon nanotubes having a double-walled or triple-walled structure to the number of the plurality of carbon nanotubes is greater than or equal to 50%, and other-type element bonded bodies constituting the group of elements of other type are arranged in line along a longitudinal direction of the carbon nanotubes.

Abstract: There is provided a CNTs wire capable of materializing a low resistivity and improving the electroconductivity. The CNT wire is formed from a single CNT aggregate constituted of a plurality of CNTs . . . having a single- or multi-walled structure, or formed by bundling a plurality of the CNT aggregates. The proportion of the total number of the CNTs having a double-walled or triple-walled structure based on the number of the plurality of CNTs constituting the CNT wire is 75% or higher; the proportion of the total number of the CNTs having an average diameter of the innermost wall of 1.7 nm or smaller based on the number of the CNTs constituting the CNT wire is 75% or higher; and the full-width at half maximum ?? in azimuth angle in azimuth intensity distribution by SAXS indicating orientation of the plurality of CNT aggregates is 60° or smaller.

Abstract: A low-resistivity carbon nanotube aggregate includes a plurality of carbon nanotubes each having one or more walls, wherein a ratio of a total number of carbon nanotubes that have two or three walls relative to a total number of said plurality of carbon nanotubes is 75% or greater, and wherein, in a G band of a Raman spectrum in the Raman spectroscopy of the plurality of carbon nanotubes, a G+/Gtotal ratio that is indicative of an amount of semiconductor carbon nanotubes relative to metallic carbon nanotubes is 0.70 or greater.

Abstract: A carbon nanotube composite includes a carbon nanotube bundle including a plurality of carbon nanotubes that are bundled, each of the plurality of carbon nanotubes having a single-walled or multi-walled structure, and a group of elements of other type introduced in an aligned manner into a gap portion between the plurality of carbon nanotubes. In the carbon nanotube bundle, a ratio of the number of carbon nanotubes having a double-walled or triple-walled structure to the number of the plurality of carbon nanotubes is greater than or equal to 50%, and other-type element bonded bodies constituting the group of elements of other type are arranged in line along a longitudinal direction of the carbon nanotubes.

Abstract: A low-resistivity carbon nanotube aggregate includes a plurality of carbon nanotubes each having one or more walls, wherein a ratio of a total number of carbon nanotubes that have two or three walls relative to a total number of said plurality of carbon nanotubes is 75% or greater, and wherein, in a G band of a Raman spectrum in the Raman spectroscopy of the plurality of carbon nanotubes, a G+/Gtotal ratio that is indicative of an amount of semiconductor carbon nanotubes relative to metallic carbon nanotubes is 0.70 or greater.