Patents by Inventor Yuuhei Okada
Yuuhei Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210229222Abstract: A method for producing solder particles, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; and a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses. With respect to this method for producing solder particles, the average particle diameter of the solder particles is from 1 ?m to 30 ?m; and the C.V. value of the solder particles is 20% or less.Type: ApplicationFiled: June 26, 2019Publication date: July 29, 2021Applicant: Showa Denko Materials Co., Ltd.Inventors: Kunihiko AKAI, Yoshinori EJIRI, Yuuhei OKADA, Toshimitsu MORIYA, Shinichirou SUKATA, Masayuki MIYAJI
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Publication number: 20210114145Abstract: The present invention relates to solder particles, each of which partially has a flat portion in the surface. By using these solder particles, electrodes facing each other are able to be appropriately connected, thereby achieving an anisotropic conductive material that exhibits excellent conduction reliability and excellent insulation reliability.Type: ApplicationFiled: June 26, 2019Publication date: April 22, 2021Applicant: Showa Denko Materials Co., Ltd.Inventors: Kunihiko AKAI, Yoshinori EJIRI, Yuuhei OKADA, Toshimitsu MORIYA, Shinichirou SUKATA, Masayuki MIYAJI
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Publication number: 20210114147Abstract: A method for producing an anisotropic conductive film, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses; a transfer step wherein an insulating resin material is brought into contact with the recess opening side of the base material that includes the solder particles in the recesses, thereby obtaining a first resin layer on which the solder particles have been transferred; and a layering step wherein a second resin layer that is configured from an insulating resin material is formed on the surface of the first resin layer, on which the solder particles have been transferred, thereby obtaining an anisotropic conductive film.Type: ApplicationFiled: June 26, 2019Publication date: April 22, 2021Applicant: Showa Denko Materials Co., Ltd.Inventors: Kunihiko AKAI, Yoshinori EJIRI, Yuuhei OKADA, Toshimitsu MORIYA, Shinichirou SUKATA, Masayuki MIYAJI
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Patent number: 10796921Abstract: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.Type: GrantFiled: February 5, 2010Date of Patent: October 6, 2020Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Hisataka Minami, Ryouta Saisyo, Jin Amanokura, Yuuhei Okada, Hiroshi Ono
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Patent number: 8889555Abstract: A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.Type: GrantFiled: February 12, 2010Date of Patent: November 18, 2014Assignee: Hitachi Chemical Co., Ltd.Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
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Patent number: 8877644Abstract: The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5.Type: GrantFiled: June 6, 2011Date of Patent: November 4, 2014Assignee: Hitachi Chemical Company, Ltd.Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
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Patent number: 8859429Abstract: A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.Type: GrantFiled: March 6, 2012Date of Patent: October 14, 2014Assignee: Hitachi Chemical Co., Ltd.Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
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Patent number: 8845915Abstract: A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.Type: GrantFiled: January 22, 2010Date of Patent: September 30, 2014Assignee: Hitachi Chemical Company, Ltd.Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
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Publication number: 20130020283Abstract: The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5.Type: ApplicationFiled: June 6, 2011Publication date: January 24, 2013Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
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Publication number: 20120160804Abstract: A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.Type: ApplicationFiled: March 6, 2012Publication date: June 28, 2012Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
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Publication number: 20120100718Abstract: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.Type: ApplicationFiled: February 5, 2010Publication date: April 26, 2012Applicant: Hitachi Chemical Company, Ltd.Inventors: Hisataka Minami, Ryouta Saisyo, Jin Amanokura, Yuuhei Okada, Hiroshi Ono
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Publication number: 20120024818Abstract: A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.Type: ApplicationFiled: February 12, 2010Publication date: February 2, 2012Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada
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Publication number: 20110300778Abstract: A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.Type: ApplicationFiled: January 22, 2010Publication date: December 8, 2011Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Hiroshi Ono, Takashi Shinoda, Yuuhei Okada