Patents by Inventor Yuuichiro Hayashi

Yuuichiro Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10443149
    Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: October 15, 2019
    Assignee: KYOCERA Corporation
    Inventors: Chiaki Domoto, Yutaka Kuba, Katsuaki Masaki, Yuuichiro Hayashi
  • Patent number: 10151045
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: December 11, 2018
    Assignee: KYOCERA CORPORATION
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Publication number: 20170342592
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.
    Type: Application
    Filed: July 13, 2017
    Publication date: November 30, 2017
    Applicant: KYOCERA Corporation
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA, Daisuke UEYAMA, Kouji MIYAMOTO, Yuuichiro HAYASHI
  • Patent number: 9777396
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.
    Type: Grant
    Filed: October 29, 2012
    Date of Patent: October 3, 2017
    Assignee: KYOCERA CORPORATION
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Publication number: 20160340795
    Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.
    Type: Application
    Filed: January 29, 2015
    Publication date: November 24, 2016
    Applicant: KYOCERA Corporation
    Inventors: Chiaki DOMOTO, Yutaka KUBA, Katsuaki MASAKI, Yuuichiro HAYASHI
  • Publication number: 20140299046
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.
    Type: Application
    Filed: October 29, 2012
    Publication date: October 9, 2014
    Applicant: KYOCERA Corporation
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi