Abstract: A semiconductor light emitting device of an embodiment of the present disclosure includes: a nitride semiconductor substrate having, as a principal plane, a plane inclined from a c-plane in an m-axis direction in a range from 60° to 90° both inclusive; an underlayer provided on the nitride semiconductor substrate and including a first layer and a second layer that are stacked on each other, the first layer including Alx2Inx1Ga(1-x1-x2)N (0<x1<1, 0?x2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (1-100) plane, the second layer including Aly2Iny1Ga(1-y1-y2)N (0<y1<1, 0?y2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (0001) plane; and a device layer including an active layer provided on the underlayer.

Abstract: A semiconductor light emitting device of an embodiment of the present disclosure includes: a nitride semiconductor substrate having, as a principal plane, a plane inclined from a c-plane in an m-axis direction in a range from 60° to 90° both inclusive; an underlayer provided on the nitride semiconductor substrate and including a first layer and a second layer that are stacked on each other, the first layer including Alx2Inx1Ga(1-x1-x2)N (0<x1<1, 0?x2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (1-100) plane, the second layer including Aly2Iny1Ga(1-y1-y2)N (0<y1<1, 0?y2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (0001) plane; and a device layer including an active layer provided on the underlayer.

Abstract: A semiconductor light emitting device of one embodiment of the present disclosure incudes: a GaN substrate having, as a principal plane, a semipolar plane or a non-polar plane inclined from a c-plane in an m-axis direction or an a-axis direction within a range from 20° to 90° both inclusive; an active layer provided on the GaN substrate; and an n-type cladding layer provided between the GaN substrate and the active layer, and including a first layer on the active layer side and a second layer on the substrate side, the first layer including AlGaInN containing 0.5% or more of indium (In), and the second layer being lower in refractive index than the first layer.

Abstract: A light-emitting device according to an embodiment of the present technology includes a first composition changing layer, an interlayer, and a second composition changing layer. The first composition changing layer has a composition continuously changed at a first change rate from a first position to a second position in a thickness direction of the light-emitting device. The interlayer is formed between the second position and a third position in the thickness direction, the interlayer having a composition identical to a composition of the first composition changing layer at the second position. The second composition changing layer has a composition continuously changed at a second change rate from the third position to a fourth position in the thickness direction, the second composition changing layer having, at the third position, a composition identical to the composition of the interlayer.

Abstract: There is provided a light-emitting element including a laminated structure including a first compound semiconductor layer having a first conductivity type, a second compound semiconductor layer having a second conductivity type different than the first conductivity type, and a third compound semiconductor layer formed between the first and second compound semiconductor layers and including an active layer. A second end surface of the second compound semiconductor layer and a third end surface of the third compound semiconductor layer are formed at respective second and third angles theta2 and theta3 relative to a virtual vertical direction of the laminated structure and satisfy the following relationship: “absolute value of theta3 is equal to or greater than 0 degree and smaller than absolute value of theta2”.

Abstract: There is provided a light-emitting element including a laminated structure including a first compound semiconductor layer having a first conductivity type, a second compound semiconductor layer having a second conductivity type different than the first conductivity type, and a third compound semiconductor layer formed between the first and second compound semiconductor layers and including an active layer. A second end surface of the second compound semiconductor layer and a third end surface of the third compound semiconductor layer are formed at respective second and third angles theta2 and theta3 relative to a virtual vertical direction of the laminated structure and satisfy the following relationship: “absolute value of theta3 is equal to or greater than 0 degree and smaller than absolute value of theta2”.

Abstract: The present invention provides identification of TRAIL signal activator sensitivity markers in cancer cells, and a method of diagnosing the sensitivity to TRAIL signal activator in a cancer patient using the markers. Tailor-made medical service of administering a TRAIL signal activator to a TRAIL signal activator sensitive cancer patient is provided. The present invention provides a preventive or remedy agent for cancer for a TRAIL signal activator sensitive patient, the agent comprising a TRAIL signal activator, wherein the patient is screened by using the fluctuation in the expression or activity of TRAIL signal activator sensitivity markers in a sample collected from a test subject, as an index. As the TRAIL signal activator sensitivity markers, AIM1, STK17B, LOC93349, CASP8 and the like may be mentioned.