Patents by Inventor Yuusuke Sugawara

Yuusuke Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7985664
    Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: July 26, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
  • Patent number: 7936037
    Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: May 3, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
  • Publication number: 20110073981
    Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
    Type: Application
    Filed: December 10, 2010
    Publication date: March 31, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazuo NISHI, Hiroki ADACHI, Junya MARUYAMA, Naoto KUSUMOTO, Yuusuke SUGAWARA, Tomoyuki AOKI, Eiji SUGIYAMA, Hironobu TAKAHASHI
  • Publication number: 20110062543
    Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
    Type: Application
    Filed: November 18, 2010
    Publication date: March 17, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazuo NISHI, Tatsuya ARAO, Atsushi HIROSE, Yuusuke SUGAWARA, Naoto KUSUMOTO, Daiki YAMADA, Hidekazu TAKAHASHI
  • Patent number: 7888714
    Abstract: Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: February 15, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Junya Maruyama, Daiki Yamada, Naoto Kusumoto, Kazuo Nishi, Hiroki Adachi, Yuusuke Sugawara
  • Publication number: 20110012218
    Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
    Type: Application
    Filed: September 28, 2010
    Publication date: January 20, 2011
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yohei MONMA, Daiki YAMADA, Hidekazu TAKAHASHI, Yuusuke SUGAWARA, Kazuo NISHI
  • Publication number: 20100330729
    Abstract: The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.
    Type: Application
    Filed: June 23, 2010
    Publication date: December 30, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto
  • Patent number: 7851278
    Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: December 14, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
  • Patent number: 7838812
    Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: November 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Tatsuya Arao, Atsushi Hirose, Yuusuke Sugawara, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi
  • Patent number: 7824950
    Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
    Type: Grant
    Filed: March 27, 2008
    Date of Patent: November 2, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yohei Monma, Daiki Yamada, Hidekazu Takahashi, Yuusuke Sugawara, Kazuo Nishi
  • Patent number: 7772667
    Abstract: The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: August 10, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto
  • Publication number: 20100187405
    Abstract: It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
    Type: Application
    Filed: April 1, 2010
    Publication date: July 29, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tatsuya ARAO, Atsushi HIROSE, Kazuo NISHI, Yuusuke SUGAWARA
  • Publication number: 20100187534
    Abstract: An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
    Type: Application
    Filed: April 1, 2010
    Publication date: July 29, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazuo NISHI, Junya MARUYAMA, Naoto KUSUMOTO, Yuusuke SUGAWARA
  • Patent number: 7705283
    Abstract: It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: April 27, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Tatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
  • Patent number: 7691686
    Abstract: An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: April 6, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara
  • Publication number: 20100075455
    Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
    Type: Application
    Filed: November 30, 2009
    Publication date: March 25, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshikazu HIURA, Hiroki ADACHI, Hironobu TAKAHASHI, Yuusuke SUGAWARA, Tatsuya ARAO, Kazuo NISHI, Yasuyuki ARAI
  • Patent number: 7679091
    Abstract: A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element.
    Type: Grant
    Filed: March 27, 2008
    Date of Patent: March 16, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara
  • Patent number: 7666766
    Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: February 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
  • Patent number: D604693
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: November 24, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuusuke Sugawara, Atsushi Hirose
  • Patent number: D605584
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: December 8, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuusuke Sugawara, Atsushi Hirose