Patents by Inventor Yuusuke Sugawara
Yuusuke Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110062543Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.Type: ApplicationFiled: November 18, 2010Publication date: March 17, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kazuo NISHI, Tatsuya ARAO, Atsushi HIROSE, Yuusuke SUGAWARA, Naoto KUSUMOTO, Daiki YAMADA, Hidekazu TAKAHASHI
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Patent number: 7888714Abstract: Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.Type: GrantFiled: September 15, 2005Date of Patent: February 15, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Takahashi, Junya Maruyama, Daiki Yamada, Naoto Kusumoto, Kazuo Nishi, Hiroki Adachi, Yuusuke Sugawara
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Publication number: 20110012218Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.Type: ApplicationFiled: September 28, 2010Publication date: January 20, 2011Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yohei MONMA, Daiki YAMADA, Hidekazu TAKAHASHI, Yuusuke SUGAWARA, Kazuo NISHI
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Publication number: 20100330729Abstract: The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.Type: ApplicationFiled: June 23, 2010Publication date: December 30, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto
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Patent number: 7851278Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.Type: GrantFiled: December 14, 2007Date of Patent: December 14, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
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Patent number: 7838812Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.Type: GrantFiled: January 8, 2009Date of Patent: November 23, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Tatsuya Arao, Atsushi Hirose, Yuusuke Sugawara, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi
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Patent number: 7824950Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.Type: GrantFiled: March 27, 2008Date of Patent: November 2, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yohei Monma, Daiki Yamada, Hidekazu Takahashi, Yuusuke Sugawara, Kazuo Nishi
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Patent number: 7772667Abstract: The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.Type: GrantFiled: May 16, 2006Date of Patent: August 10, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto
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Publication number: 20100187534Abstract: An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.Type: ApplicationFiled: April 1, 2010Publication date: July 29, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kazuo NISHI, Junya MARUYAMA, Naoto KUSUMOTO, Yuusuke SUGAWARA
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Publication number: 20100187405Abstract: It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.Type: ApplicationFiled: April 1, 2010Publication date: July 29, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Tatsuya ARAO, Atsushi HIROSE, Kazuo NISHI, Yuusuke SUGAWARA
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Patent number: 7705283Abstract: It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.Type: GrantFiled: May 18, 2006Date of Patent: April 27, 2010Assignee: Semiconductor Energy Laboratory Co., LtdInventors: Tatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
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Patent number: 7691686Abstract: An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.Type: GrantFiled: May 16, 2005Date of Patent: April 6, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara
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Publication number: 20100075455Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.Type: ApplicationFiled: November 30, 2009Publication date: March 25, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yoshikazu HIURA, Hiroki ADACHI, Hironobu TAKAHASHI, Yuusuke SUGAWARA, Tatsuya ARAO, Kazuo NISHI, Yasuyuki ARAI
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Patent number: 7679091Abstract: A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element.Type: GrantFiled: March 27, 2008Date of Patent: March 16, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara
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Patent number: 7666766Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.Type: GrantFiled: September 25, 2006Date of Patent: February 23, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
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Publication number: 20090126790Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.Type: ApplicationFiled: January 16, 2009Publication date: May 21, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
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Publication number: 20090121119Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.Type: ApplicationFiled: January 8, 2009Publication date: May 14, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Tatsuya Arao, Atsushi Hirose, Yuusuke Sugawara, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi
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Patent number: 7531784Abstract: An object is to provide a photoelectric conversion device capable of detecting a wider range of illuminance without expansion of a range of an output voltage or output current. The photoelectric conversion device has a photoelectric conversion device including a photoelectric conversion element and an amplifier circuit electrically connected to the photoelectric conversion element, and a bias switching unit for reversing a bias to be applied to the photoelectric conversion device. The bias to be applied to the photoelectric conversion device is reversed with use of the bias switching unit, whereby the photoelectric conversion device can detect a wider range of illuminance without expansion of a range of an output voltage or output current.Type: GrantFiled: April 25, 2007Date of Patent: May 12, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
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Patent number: D604693Type: GrantFiled: August 13, 2008Date of Patent: November 24, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuusuke Sugawara, Atsushi Hirose
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Patent number: D605584Type: GrantFiled: August 13, 2008Date of Patent: December 8, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuusuke Sugawara, Atsushi Hirose