Abstract: Provided is a wet atomizer capable of stably increasing a pressure in a pressurizing chamber and performing highly reproducible raw material process. A wet atomizer includes a motor; a power transmission device that converts a rotational motion of the motor into a reciprocating motion; a high-pressure cylinder; a plunger that reciprocates inside the high-pressure cylinder by the power transmission device to pressurize raw materials; a drive controller that controls the reciprocating motion of the plunger; a nozzle that atomizes pressurized raw material; a first check valve disposed downstream of the nozzle; and a first elastic member that presses the first check valve.

Abstract: Provided are abrasive grains and a composition for chemical mechanical polishing which are for selectively polishing a silicon nitride film, and which are applicable not only to silicon oxide films but also to amorphous silicon films and polysilicon films. This method for manufacturing abrasive grains includes: a first step of heating a mixture which contains particles having a sulfanyl group (—SH) fixed to the surface thereof via covalent bonds, and which contains a compound having carbon-carbon unsaturated double bonds; and a second step, which is performed after the first step, of further adding a peroxide and carrying out heating.

Abstract: A composition for chemical mechanical polishing and a polishing method allow a semiconductor substrate containing at least one of a polysilicon film and a silicon nitride film to be polished at a high speed, while being capable of reducing the incidence of surface defects in the polished surface. The composition for chemical mechanical polishing contains (A) abrasive grains having plural protrusions on their surfaces and (B) a liquid medium, wherein the absolute value of the zeta-potential of the component (A) in the composition for chemical mechanical polishing is 10 mV or more.

Abstract: Provided is a wet atomizer for processing all-solid-state battery raw materials while ensuring sealing property, operability after completion of processing, and maintenance property. The wet atomizer includes a liquid supply pump for supplying the all-solid-state battery raw materials, a pressure intensifier for pressurizing the all-solid-state battery raw materials supplied from the liquid supply pump, a high-pressure filter for filtering the all-solid-state battery raw materials pressurized by the pressure intensifier, a chamber for injecting the all-solid-state battery raw materials filtered by the high-pressure filter, a sealing member for sealing the space for processing the all-solid-state battery raw materials, and an inert gas supply unit for supplying an inert gas to the sealing member.

Abstract: Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction in the occurrence of a surface defect in the polished face after polishing. A composition for chemical mechanical polishing according to the present invention comprises (A) abrasive grains containing titanium nitride and (B) a liquid medium, wherein the absolute value of the zeta-potential of said (A) component in the composition for chemical mechanical polishing is 8 mV or higher.

Abstract: Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.

Abstract: Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and reduce post-polishing surface defects. The chemical mechanical polishing composition contains (A) silica particles having the functional group represented by general formula (1), and (B) at least one selected from the group consisting of a carboxylic acid having an unsaturated bond and a salt thereof. (1): —COO-M+ (M+ represents a monovalent cation.