Patents by Inventor Yuya SAKURABA

Yuya SAKURABA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240186047
    Abstract: The present invention provides a current-perpendicular-to-plane giant magneto-resistive element that can use a high spin polarization (?) and spin asymmetry (?) at the interface between layers, and that has a multilayered structure for easy film thickness design. Used is a current-perpendicular-to-plane giant magneto-resistive element comprising: a substrate (11) made of an MgO substrate; and a giant magneto-resistive effect layer (17) that has at least one multilayer having first non-magnetic layers (13a), (13b), a lower ferromagnetic layer (14a), a lower Heusler alloy layer (14b), a second non-magnetic layer (15), an upper Heusler alloy layer (16b), and an upper ferromagnetic layer (16a) formed on the substrate (11).
    Type: Application
    Filed: March 1, 2022
    Publication date: June 6, 2024
    Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Yuichi FUJITA, Yuya SAKURABA, Yoshio MIURA, Taisuke SASAKI, Kazuhiro HONO
  • Patent number: 11889762
    Abstract: The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: January 30, 2024
    Assignee: National Institute for Materials Science
    Inventors: Yuya Sakuraba, Weinan Zhou, Kenichi Uchida, Kaoru Yamamoto
  • Publication number: 20230102920
    Abstract: Provided is a novel thermoelectric conversion element with which the thermoelectric power generated in a direction orthogonal to both a temperature gradient and the magnetization can be increased without changing the thermoelectric conversion characteristic of a magnetic material.
    Type: Application
    Filed: March 12, 2021
    Publication date: March 30, 2023
    Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Yuya Sakuraba, Weinan Zhou, Kenichi Uchida, Kaoru Yamamoto
  • Patent number: 11521645
    Abstract: The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element comprises a magnetoresistive film including a pair of body centered cubic (bcc) crystal structure CoFe ferromagnetic layers with a (001) crystal orientation, the pair of layers separated by a non-magnetic layer of Cu with bcc crystal structure.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: December 6, 2022
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Kresna Bondan Fathoni, Yuya Sakuraba, Taisuke Sasaki, Tomoya Nakatani, Yoshio Miura, Kazuhiro Hono
  • Publication number: 20220005499
    Abstract: The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device.
    Type: Application
    Filed: June 27, 2019
    Publication date: January 6, 2022
    Applicant: National Institute for Materials Science
    Inventors: Kresna Bondan FATHONI, Yuya SAKURABA, Taisuke SASAKI, Tomoya NAKATANI, Yoshio MIURA, Kazuhiro HONO
  • Patent number: 10749105
    Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: August 18, 2020
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Jiamin Chen, Yuya Sakuraba, Jun Liu, Hiroaki Sukegawa, Kazuhiro Hono
  • Patent number: 10205091
    Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: February 12, 2019
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Jiamin Chen, Yuya Sakuraba, Jun Liu, Hiroaki Sukegawa, Kazuhiro Hono
  • Publication number: 20180226573
    Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.
    Type: Application
    Filed: March 29, 2018
    Publication date: August 9, 2018
    Inventors: Jiamin CHEN, Yuya SAKURABA, Jun LIU, Hiroaki SUKEGAWA, Kazuhiro HONO
  • Patent number: 9893260
    Abstract: Provided is a thermoelectric material which can increase its anomalous Nernst angle. The thermoelectric material of a magnetic material for a thermoelectric power generation device employs the anomalous Nernst effect, including iron doped with iridium.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: February 13, 2018
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Yohei Kinoshita, Yuya Sakuraba, Taisuke Sasaki, Kazuhiro Hono
  • Publication number: 20170229643
    Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.
    Type: Application
    Filed: February 3, 2017
    Publication date: August 10, 2017
    Inventors: Jiamin CHEN, Yuya SAKURABA, Jun LIU, Hiroaki SUKEGAWA, Kazuhiro HONO
  • Publication number: 20160155919
    Abstract: Provided is a thermoelectric material which can increase its anomalous Nernst angle. The thermoelectric material of a magnetic material for a thermoelectric power generation device employs the anomalous Nernst effect, including iron doped with iridium.
    Type: Application
    Filed: November 20, 2015
    Publication date: June 2, 2016
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Yohei KINOSHITA, Yuya SAKURABA, Taisuke SASAKI, Kazuhiro HONO