Abstract: In a ferromagnetic material containing at least one kind of rare-earth element, a layer containing at least one kind of alkaline earth element or rare-earth element and fluorine is formed at the grain boundary or near the powder surface of the ferromagnetic material. A further layer containing at least one kind of rare-earth element, having a fluorine concentration lower than that of the layer described first and having a rare-earth element concentration higher than that of the host phase of the ferromagnetic material, or an oxide layer containing a rare-earth element is formed in adjacent with a portion of the layer described first.

Abstract: In a ferromagnetic material containing at least one kind of rare-earth element, a layer containing at least one kind of alkaline earth element or rare-earth element and fluorine is formed at the grain boundary or near the powder surface of the ferromagnetic material. A further layer containing at least one kind of rare-earth element, having a fluorine concentration lower than that of the layer described first and having a rare-earth element concentration higher than that of the host phase of the ferromagnetic material, or an oxide layer containing a rare-earth element is formed in adjacent with a portion of the layer described first.

Abstract: A lamellar high resistance layer having resistivity ten times or higher than that of a mother phase containing iron or cobalt is formed and an oxygen content is controlled to 10 to 10000 ppm so that the reliability and residual magnetic flux density are increased.

Abstract: A lamellar high resistance layer having resistivity ten times or higher than that of a mother phase containing iron or cobalt is formed and an oxygen content is controlled to 10 to 10000 ppm so that the reliability and residual magnetic flux density are increased.

Abstract: A magnetic material is including magnetic particles including a rare earth element, wherein a fluorine compound including an alkaline earth element or a rare earth element is formed on a surface of the magnetic particles, an oxygen concentration of the fluorine compound is higher than an oxygen concentration of the magnetic particle and the fluorine compound includes at least one type of element selected from the group consisting of the Li, Mg, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Zn, Al, Ga, Sr, Y, Zr, Nb, Ag, In, Sn, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Pb, and Bi elements.

Abstract: A magnet, wherein a surface of each of magnetic particles constituting the magnet is covered by a film with two or more types of fluoride are main components, wherein the main components of the film are fluoride including an element selected from the group consisting of Mg, La, Ce, Pr and Nd and fluoride including an element selected from the group consisting of Ca, Sr, Ba, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.

Abstract: The present invention is envisioned to provide a high-strength glass which is applicable to the objective of size and weight reduction. A layer containing a rare earth element in a high concentration is formed at a glass portion close to a surface (superficial portion) which is shallow in depth from an outermost surface of the glass which contains a rare earth element.

Abstract: The present invention is envisioned to provide a high-strength glass which is applicable to the objective of size and weight reduction. At a surface portion of the glass containing a rare earth element, a heterogeneous phase containing at least said rare earth element is formed.

Abstract: A fluoride coating composition forms a coating of a rare earth fluoride and/or an alkaline earth metal fluoride on a surface of an article to be coated. The composition contains the rare earth fluoride and/or alkaline earth metal fluoride, and a medium mainly containing at least one alcohol. In the composition, the rare earth fluoride and/or alkaline earth metal fluoride is swollen by the medium, is gelatinous, and is dispersed in the medium.

Abstract: The present invention is envisioned to provide a high-strength glass which is applicable to the objective of size and weight reduction. At a surface portion of the glass containing a rare earth element, a heterogeneous phase containing at least said rare earth element is formed.

Abstract: The present invention is envisioned to provide a high-strength glass which is applicable to the objective of size and weight reduction. A compression stress layer is formed in a surface portion of an oxide-based glass containing at least one rare earth element selected from the group consisting of Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu and further containing at least Si element and an alkali metal element.

Abstract: The present invention is envisioned to provide a high-strength glass which is applicable to the objective of size and weight reduction. A layer containing a rare earth element in a high concentration is formed at a glass portion close to a surface (superficial portion) which is shallow in depth from an outermost surface of the glass which contains a rare earth element.

Abstract: In a ferromagnetic material containing at least one kind of rare-earth element, a layer containing at least one kind of alkaline earth element or rare-earth element and fluorine is formed at the grain boundary or near the powder surface of the ferromagnetic material. A further layer containing at least one kind of rare-earth element, having a fluorine concentration lower than that of the layer described first and having a rare-earth element concentration higher than that of the host phase of the ferromagnetic material, or an oxide layer containing a rare-earth element is formed in adjacent with a portion of the layer described first.

Abstract: A magnetic recording medium comprising a substrate 1, an inorganic compound layer 2 which works as a shielding layer, a magnetic layer 3 and a protective layer 4 which are laminated on said substrate; wherein said inorganic compound layer 2 comprises column-like crystal particles 6 and amorphous grain boundary phases isolating said particles 6, wherein said magnetic layer 3 has magnetic particles 14 arranged regularly and epitaxially grows on said inorganic compound layer 2, and wherein the grain sizes and the standard grain size deviation of magnetic particles 14 of said magnetic layer 3 reflect those of said inorganic compound layer 2.

Abstract: An X-ray tube which is high in brightness and high in resolution, and can withstand continuous long-time use, that is, it can withstand a high heat load. An X-ray target and an X-ray tube having the X-ray target include an X-ray generating metal layer having an average crystal grain diameter not larger than 30 &mgr;m on the surface of a base plate in the X-ray irradiated side. The X-ray tube has a small focus point and can withstand a high input load. A CT apparatus using the X-ray tube can provide a high resolution and a high definition image.

Abstract: A magnetic recording medium comprising a substrate 1, an inorganic compound layer 2 which works as a shielding layer, a magnetic layer 3 and a protective layer 4 which are laminated on said substrate; wherein said inorganic compound layer 2 comprises column-like crystal particles 6 and amorphous grain boundary phases isolating said particles 6, wherein said magnetic layer 3 has magnetic particles 14 arranged regularly and epitaxially grows on said inorganic compound layer 2, and wherein the grain sizes and the standard grain size deviation of magnetic particles 14 of said magnetic layer 3 reflect those of said inorganic compound layer 2.

Abstract: To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with the {1120} plane. ?Selected Drawing!FIG.

Abstract: A magnetic detecting device is constructed of a substrate, a first magnetic layer formed on the substrate, a first magnetic layer formed on the substrate, an intermediate layer containing an atom indicative of weak spincoupling and formed on the first magnetic film, and a second magnetic layer formed on the intermediate layer. The magnetic detecting device further comprises a unit or supplying a current through the first and second magnetic layers, and a unit for detecting a voltage generated between the first magnetic layer and the second magnetic layer while the current is supplied thereto.

Abstract: A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material.

Abstract: A superconducting thin film obtained by laminating a Cu-O atomic pair film and another oxide film while growing in one direction shows a higher superconducting critical temperature (Tc). By alternately laminating a thin film of A.sub.2 CuO.sub.4 and a thin film of L.sub.2 CuO.sub.4, wherein A and L are different rare earth elements, the Tc can be enhanced remarkably.