Patents by Inventor Yvon Cazaux

Yvon Cazaux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200203401
    Abstract: An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 25, 2020
    Applicant: Commissariat à I'Énergie Atomique et aux Énergies Alternatives
    Inventors: Laurent Frey, Yvon Cazaux
  • Patent number: 10613202
    Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: April 7, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
  • Publication number: 20190393253
    Abstract: An image sensor including a plurality of pixels, each pixel including a photogate detector coupled to a readout circuit via a first conductive transfer gate, wherein the photogate detector and the first transfer gate are formed inside and on top of a first semiconductor substrate, and the readout circuit is formed inside and on top of a second semiconductor substrate arranged on the first substrate, the sensor being intended to be illuminated on the side of the surface of the first substrate opposite to the second substrate.
    Type: Application
    Filed: June 19, 2019
    Publication date: December 26, 2019
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventor: Yvon Cazaux
  • Patent number: 10488499
    Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: November 26, 2019
    Assignees: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Francois Roy, Marie Guillon, Yvon Cazaux, Boris Rodrigues, Alexis Rochas
  • Publication number: 20190191067
    Abstract: A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor.
    Type: Application
    Filed: December 4, 2018
    Publication date: June 20, 2019
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Jérôme Vaillant, Yvon Cazaux, Alexis Rochas
  • Patent number: 10264242
    Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: April 16, 2019
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Yvon Cazaux, Benoit Giffard
  • Publication number: 20190086519
    Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.
    Type: Application
    Filed: November 19, 2018
    Publication date: March 21, 2019
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
  • Patent number: 10170513
    Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.
    Type: Grant
    Filed: September 23, 2017
    Date of Patent: January 1, 2019
    Assignees: Commissariat à l'Energie Atomique et aux Energies, STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS (GRENOBLE 2) SAS
    Inventors: Yvon Cazaux, François Roy, Marie Guillon, Arnaud Laflaquiere
  • Patent number: 10162048
    Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: December 25, 2018
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
  • Publication number: 20180167606
    Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels.
    Type: Application
    Filed: December 1, 2017
    Publication date: June 14, 2018
    Inventors: Yvon CAZAUX, Benoît GIFFARD
  • Patent number: 9917124
    Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: March 13, 2018
    Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives
    Inventors: Yvon Cazaux, François Roy, Arnaud Laflaquiere, Marie Guillon
  • Patent number: 9880057
    Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: January 30, 2018
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Yvon Cazaux, Benoit Giffard, Xavier Hugon
  • Publication number: 20180012925
    Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.
    Type: Application
    Filed: September 23, 2017
    Publication date: January 11, 2018
    Inventors: Yvon CAZAUX, François ROY, Marie GUILLON, Arnaud LAFLAQUIERE
  • Patent number: 9736411
    Abstract: The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: August 15, 2017
    Assignee: Commissariat à l'Eneragie Atomique et aux Energies Alternatives
    Inventors: Marie Guillon, Yvon Cazaux, Josep Segura Puchades
  • Publication number: 20170194368
    Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.
    Type: Application
    Filed: December 28, 2016
    Publication date: July 6, 2017
    Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
  • Publication number: 20170192090
    Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.
    Type: Application
    Filed: December 22, 2016
    Publication date: July 6, 2017
    Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Francois Roy, Marie Guillon, Yvon Cazaux, Boris Rodrigues, Alexis Rochas
  • Publication number: 20160118432
    Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.
    Type: Application
    Filed: October 22, 2015
    Publication date: April 28, 2016
    Inventors: Yvon CAZAUX, François ROY, Arnaud LAFLAQUIERE, Marie GUILLON
  • Publication number: 20160112662
    Abstract: The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.
    Type: Application
    Filed: October 20, 2015
    Publication date: April 21, 2016
    Inventors: Marie GUILLON, Yvon CAZAUX, Josep SEGURA PUCHADES
  • Patent number: 9245915
    Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: January 26, 2016
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Benoit Giffard, Yvon Cazaux, Norbert Moussy
  • Patent number: 9236407
    Abstract: An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: January 12, 2016
    Assignees: STMicroelectronics SA, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: François Roy, Yvon Cazaux