Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.

Abstract: A display substrate, a method of manufacturing the same and a display device are provided. The display substrate includes a base substrate, a plurality of metal particles dispersedly disposed on the base substrate and forming a discontinuous film, a light shielding layer disposed on a side of the base substrate on which the plurality of metal particles are disposed and covering the plurality of metal particles, and a thin film transistor located on a side of the light shielding layer far away from the base substrate.

Abstract: A substrate for light-emitting diode, a backlight module and a display device are disclosed. The substrate for light-emitting diode includes a plurality of light-emitting sub-regions, and each of the plurality of light-emitting sub-regions includes at least two anode electrode pads electrically connected through a first parallel-connection line, and at least two cathode electrode pads electrically connected through a second parallel-connection line. The at least two cathode electrode pads are disposed in one-to-one correspondence with the at least two anode electrode pads. At least one series-connection electrode pad group is further disposed between the anode electrode pad and the cathode electrode pad which are corresponding to each other; and each of the at least one series-connection electrode pad group includes two series electrode pads which are electrically connected through a series-connection line.

Abstract: Embodiments of the present disclosure provide an array substrate including a plurality of pixel regions arranged in an array and a black matrix located between the pixel regions, the black matrix including an outward convex curved surface, wherein a material of the black matrix include metal, metal oxide, and metal nitride. The array substrate provided by the present disclosure can effectively reduce the reflectivity of the display panel and improve the image quality.

Abstract: The present disclosure provides an OLED substrate and a display device. The OLED substrate includes a base substrate, and a thin-film transistor, a first electrode, and a light-emitting layer arranged in sequence on the base substrate, in which the OLED substrate further includes a light-shielding layer arranged between an active layer of the thin-film transistor and the first electrode.

Abstract: The present disclosure provides a method of manufacturing an array substrate and a method of manufacturing a display device. The method of manufacturing an array substrate includes steps of: forming a planarization layer above a base substrate; forming an electrode layer above the planarization layer; forming a metal functional layer above the electrode layer; patterning the metal functional layer by using a multi-greyscale mask layer as a mask; forming an insulating protection layer on a portion of the electrode layer not being covered by the patterned metal functional layer; performing an ashing process on the multi-greyscale mask layer; patterning the electrode layer by using the metal functional layer as a mask; further patterning the metal functional layer by using the multi-greyscale mask layer subjected to the ashing process as a mask.

Abstract: The present invention provides a COA substrate and a fabricating method thereof as well as a display device, and relates to the field of display technology, which solves the problem of a relatively large parasitic capacitance to be generated between the data line and the common electrode layer because the common electrode layer is formed on the black matrix directly in the existing technical solution, avoids signal delay, and improves the image display quality of the display. The COA substrate comprises: a black matrix, a color filter, a common electrode layer and an organic insulating film layer formed on the black matrix, the common electrode layer is formed on the organic insulating film layer, the organic insulating film layer is arranged on the color filter and covers the position of the color filter; the material of the organic insulating film layer is an organic insulating material having a relative dielectric constant less than 10.

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate, a display panel, and a display device are disclosed. The present disclosure is directed to the field of display technologies. The thin film transistor comprises a drain electrode and a source electrode. At least one of the drain electrode and the source electrode are an yttrium-doped first metal film, and a surface of the first metal film is yttrium-copper complex oxide formed by annealing.

Abstract: A switch element, an array substrate, a display panel, and a display device are disclosed. The switch element includes: a first electrode, an insulation layer, where the first electrode is located on a first side of the insulation layer; a second electrode and a third electrode arranged spaced from each other, both of which are located on a second side of the insulation layer away from the first electrode; and a first oil ink located between the second electrode and the third electrode, where the first oil ink is electrically conductive, and configured to connect or disconnect the second electrode with or from the third electrode under control of the first electrode.

Abstract: A display apparatus having a substrate and an anti-reflective coating on the substrate. The anti-reflective coating includes a nano-flakes layer having a plurality of nano-flakes for reducing reflection of light on a surface of the substrate; the nano-flakes layer has a first surface distal to the substrate, the first surface having a plurality of nano-pores formed by planes of adjacent nano-flakes; and each of the plurality of nano-pores is configured to reflect at least a portion of incident light multiple times inside the each of the plurality of nano-pores thereby reducing reflection of light on the surface of the substrate.

Abstract: Disclosed are a wearable device and a terminal. The wearable device includes: a wearable component and a power supply component fixed on the wearable component. The power supply component includes a first supporting surface, an energy conversion element and an energy storage element. The energy conversion element includes: a magnetic structure, an elastic structure and an induction coil. One end of the magnetic structure is connected to the first supporting surface through the elastic structure. The magnetic structure moves with respect to the induction coil through the elastic structure when the wearable device is shaken, such that an alternating current is generated in the induction coil. The energy storage element is adapted to store electric energy obtained by the energy conversion element.

Abstract: An array substrate and a manufacturing method thereof, and a display device are provided. The array substrate includes: a plurality of pixel units arranged in an array, each of the pixel units including a first transparent electrode and a color filter unit opposite to each other. A first insulating layer is disposed between the first transparent electrode and the color filter unit, a protrusion is provided between adjacent first transparent electrodes, and a vertex of the protrusion is higher than an upper surface of the first transparent electrode.

Abstract: The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

Abstract: The present disclosure discloses a fluorescent material and a manufacturing method and use thereof. The fluorescent material comprises SnO2 doped with Ag, wherein the molar ratio of Ag to SnO2 is 0.0014-0.007:1. The fluorescent material can emit fluorescent lights of two different colors which are complementary colors of each other, and the fluorescent material has a long service life. The fluorescent material is synthesized via a hydrothermal method under air atmosphere by using SnCl4.5H2O as a raw material. The method for manufacturing the fluorescent material is easy and simple, and significant economic and social benefits can be obtained when it is popularized and applied in the fields of illumination and display. The fluorescent material can be employed for manufacturing white-light fluorescent powder used in a white-light LED excitable by an ultraviolet-near ultraviolet LED diode chip.

Abstract: A display panel includes a base substrate, and thin film transistors positioned on the base substrate. Each thin film transistor includes a polysilicon layer. The display panel further includes a light-shielding layer for blocking ultraviolet (UV) light that is located at a side of the polysilicon layer away from the base substrate. An orthographic projection of the polysilicon layer on the substrate is in a range of an orthographic projection of the light-shielding layer on the substrate.

Abstract: An array substrate and a manufacturing method thereof and a display device are disclosed. The array substrate includes a base substrate, and a color filter layer, a common electrode and a black matrix disposed on the base substrate, the black matrix is capable of conducting electricity, and the black matrix is electrically connected with the common electrode. The array substrate can reduce parasitic capacitance, and decrease power consumption.

Abstract: Provided in an embodiment of the present invention are a manufacturing method of an electrode pattern, a thin film transistor and a manufacturing method thereof, and a display panel. The manufacturing method of an electrode pattern includes: forming a metal thin film; performing processing on the metal thin film to form a partner layer over a surface of the metal thin film, the partner layer being configured to react with a photoresist to form a hydrogen bond; and performing patterning to form an electrode.

Abstract: A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

Abstract: The present disclosure provides a method for manufacturing an LTPS thin film transistor which includes: forming a light shielding pattern and an active layer of the LTPS thin film transistor on a base substrate through one single patterning process, in which an orthogonal projection of the active layer on the base substrate falls within an orthogonal projection of the light shielding pattern on the base substrate, and the light shielding pattern is made of a semiconductor material.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.