Abstract: Discussed herein are half-Heusler thermoelectric materials including niobium, iron, antimony, and titanium that are formed by ball-milling and hot-pressing the ball-milled power to obtain various thermoelectric properties and an average grain size above 1 ?m.

Abstract: Disclosed is a thermoelectric material according to various SSnSe-based formulas, and the systems and methods of manufacturing the thermoelectric, high performance material by hot pressing materials according to various formulas in order to obtain a figure of merit (ZT) suitable for thermoelectric applications at high (above 600K) temperatures. A disclosed method comprises hot-pressing a powder that comprises Sn and Se in a predetermined direction to form a pressed component, wherein the pressed component comprises a ZT value of at least 0.8 above about 750 K.

Abstract: Systems and methods of manufacturing thermoelectric devices comprising at least one electrical contact fabricated using hot-pressing to increase the bonding strength at the contact interface(s) and reducing the contact resistance. The hot pressed component may include a first and a second metallic layer each in contact with a thermoelectric layer, and where a contact resistance between the first metallic layer and the thermoelectric layer or between the second metallic layer and the thermoelectric layer is less than about 10 ?? cm2. When interlayers are employed in a thermoelectric device, first hot pressed contact interface is formed between the thermoelectric layer and the first interlayer and a second hot pressed contact interface is formed between the thermoelectric layer and the second interlayer, and at least one of the first and the second hot pressed contact interfaces comprises a bonding strength of at least 16 MPa.

Abstract: A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 ?V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 ?V/K at any temperature.

Abstract: A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300?/? when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.

Abstract: Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit (ZT) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.

Abstract: Systems and methods of fabricating electrodes, including thin metallic films, include depositing a first metallic layer on a substrate and passivating the deposited layer. The processes of deposition and passivation may be done sequentially. In some embodiments, a plurality of substrates may be coated with a metallic layer and further processed at a later time, including passivation and disposal of additional layers as discussed herein.

Abstract: A spectrally selective solar absorber is described and comprises a substrate, double cermet layers comprising multi-metal nanoparticles embedded in a dielectrics matrix, and double antireflection layers deposited on cermet layers. The tungsten or titanium or tantalum infrared reflector layer suppressing the diffusion of substrate elements and multi-metal nanoparticles in the cermet are disclosed.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2 .

Abstract: A method of selectively targeting a cell with a therapeutic agent, the method comprising: targeting a cell with a nanospear, puncturing the cell with said nanospear; releasing a therapeutic agent from said nanospear, wherein said therapeutic agent enters said cell, thereby effecting the efficacy of said cell.

Abstract: A method of extracting biomolecules from live cells comprising: introducing a plurality of magnetized carbon nanotubes (MCNTs) into a live cell, wherein the MCNTs penetrate the cell membrane under a magnetic force; spearing the MCNTs through the cell under the magnetic force, wherein a biomolecule attaches to at least a portion of the MCNTs to form a biomolecule loaded MCNT; removing at least a portion of the biomolecule loaded MCNTs from the cell under the magnetic force; and collecting at least a portion of the biomolecule loaded MCNTs.

Abstract: A solar selective coating includes a substrate, a cermet layer having nanoparticles therein deposited on the substrate, and an anti-reflection layer deposited on the cermet layer. The cermet layer and the anti-reflection layer may each be formed of intermediate layers. A method for constructing a solar-selective coating is disclosed and includes preparing a substrate, depositing a cermet layer on the substrate, and depositing an anti-reflection layer on the cermet layer.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2.

Abstract: Systems and methods of manufacturing a thermoelectric, high performance material by using ball-milling and hot pressing materials according to various formulas, where some formulas substitute a different element for part of one of the elements in the formula, in order to obtain a figure of merit (ZT) suitable for thermoelectric applications.

Abstract: Materials and systems and methods of manufacture thereof that function as thermoelectric materials both in and near a cryogenic temperature range. In particular, the synthesis of heavy fermion materials that exhibit higher ZTs than previously achieved at cryogenic and near-cryogenic temperatures.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2.

Abstract: A bio-recognition system is described, where a bio-recognition nanosensor system uses an electropolymerization to produce protein imprints for biomarker recognition. Methods of making a bio-recognition sensor include forming a electropolymer coating on an electrode, binding a target biological structure to the coating to form an imprint, removing the biological structure from the coating, and forming a template that binds a specific biological structure.

Abstract: Methods for synthesis of thermoelectric materials are disclosed. In some embodiments, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more chalcogens and one or more transition metals; and consolidating the nanoparticles under elevated pressure and temperature, wherein the nanoparticles are heated and cooled at a controlled rate.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2.

Abstract: Systems and methods disclosed herein are directed towards the fabrication of a nanomesh composite filter (NCF) that can be manufactured according to various embodiments, all of which are intended to be fabricated in order to control the transmission, reflection, and absorption of various wavelengths bands. In particular, the disclosed embodiments may be used for heat shielding applications where certain wavelength ranges may be desirable to transmit and others may be desirable to reflect.