Abstract: A method of transferring a pattern onto a substrate, in the fabrication of ICs, is disclosed. The substrate is coated with a photoresist layer, wherein the photoresist layer is selectively exposed and developed, producing sidewalls that exhibit roughness. The roughness is smoothened out by coating the photoresist layer with a coating layer.

Abstract: A method for removing a carbon-containing polysilane from a semiconductor substrate without stripping the polysilane during manufacture of a semiconductor device, the method entailing the steps in the following order of coating a carbon-containing polysilane on a semiconductor substrate and coating a resist on the polysilane; patterning the resist with exposure and development; transferring the pattern from the resist to the polysilane using an etch process selective to the resist; stripping the resist; transferring the pattern from the polysilane to a hardmask using an etch selective to the hardmask; subjecting the polysilane to thermal or plasma/thermal oxidation to convert the polysilane to silicon oxide; and etching the substrate and stripping off the hardmask.

Abstract: A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.

Abstract: &ggr;-Hydroxy-2-(fluoroalkylaminocarbonyl)-1-piperazinepentanamide compounds are inhibitors of HIV protease and inhibitors of HIV replication. These compounds are useful in the prevention or treatment of infection by HV and the treatment of AIDS, either as compounds, pharmaceutically acceptable salts, pharmaceutical composition ingredients, whether or not in combination with other antivirals, immunomodulators, antibiotics or vaccines. Methods of treating AIDS and methods of preventing or treating infection by HIV are also described. These compounds are effective against HIV viral mutants which are resistant to HIV protease inhibitors currently used for treating AIDS and HIV infection.

Abstract: In a process of producing low k inter-layer dielectric film in an interconnect structure on a semiconductor body, the improvement of preventing resist poisoning effects, comprising:

Abstract: A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.

Abstract: Certain &agr;-hydroxy-&ggr;-[[(carbocyclic- or heterocyclic-substituted)amino]carbonyl]alkanamide derivatives are described as inhibitors of HIV protease and inhibitors of HIV replication. These compounds are useful in the prevention or treatment of infection by HIV and the treatment of AIDS, either as compounds, pharmaceutically acceptable salts, pharmaceutical composition ingredients, whether or not in combination with other antivirals, immunomodulators, antibiotics or vaccines. Methods of treating AIDS and methods of preventing or treating infection by HIV are also described. These compounds are effective against HIV viral mutants which are resistant to HIV protease inhibitors currently used for treating AIDS and HIV infection.

Abstract: A method for detecting an ending point during an etching process in semiconductor fabrication. In general, an implantation technique in combination with chemical analysis of the implants is used for ending point detection. In one aspect, a method for detecting an endpoint of an etch process comprises the steps of implanting a dopant into a material at a reference depth, detecting a concentration of the dopant in an etching environment as the material is etched, and determining that the material has been etched to the reference depth when peak concentration of the dopant is detected.

Abstract: Systems and methods for deciphering an alignment feature are disclosed. A feature is provided on a semiconductor wafer having an elasticity that is different from material surrounding the feature. A stress is applied to the wafer, the feature is scanned with an atomic force microscope to determine a position of the feature. The position of the feature is based on an elasticity difference detected between the feature and the material surrounding the feature.

Abstract: A method for removing polysilane from a semiconductor substrate without stripping during manufacture of a semiconductor device, comprising:

Abstract: Novel proteins and methods of treatment using same are disclosed.

Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50% of the dose-to-clear for a non-patterned exposure.

Abstract: A chemically amplified resist composition that eliminates blob defects when used to produce semiconductor devices comprising: a base polymer with a protected group; a solvent; and a photoacid generator comprising an iodonium salt containing a water-soluble group of a sulphonium group containing a water-soluble group.

Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.

Abstract: Novel proteins and methods of treatment using sameare disclosed.

Abstract: A method for forming self-aligned features for semiconductor devices includes the steps of providing a first layer including a reflective material on a surface of the first layer, a second layer formed on the first layer, and a resist layer formed on the second layer, providing radiation through the resist layer and the second layer wherein the radiation is reflected from the reflective material back to the resist layer thereby increasing irradiation of the resist layer over the reflective material and developing the resist layer. A semiconductor device in accordance with the invention includes a first layer with reflective structures therein. A second layer is formed on the first layer, and a patterned resist layer is formed on the second layer.

Abstract: A method for reducing critical dimension loss and resist loss dimensions during etching includes providing a dielectric layer having an anti-reflection layer formed thereon and patterning a resist layer on the anti-reflection layer. The resist layer is exposed to an agent including silicon, and the agent is reacted with the resist to form a silylation region on exposed surfaces of the resist layer. The anti-reflection layer is etched by employing the silylation regions as an etch mask wherein the silylation regions have a greater resistance to etching than the antireflection layer and the resist layer.

Abstract: A chemokine, human L105, is disclosed.

Abstract: Polymer/cholesteric liquid crystal dispersions are provided in which the liquid crystal phase separated from the polymer matrix to form droplets. The cholesteric liquid crystals were positive dielectric anisotropic. At a zero field condition, the liquid crystal in the droplets was bistable, that is, the liquid crystal can be in either the reflecting planar state or the scattering focal conic state. When the liquid crystal 101 was in the planar texture, the helical axis of the liquid crystal was more or less perpendicular to the cell surface; colored light 105 was Bragg reflected. When the liquid crystal 101 was in the focal conic texture, the helical axis was more or less parallel to the cell surface, incident light was scattering 106 in the forward direction.

Abstract: The present invention is directed to certain piperidines, pyrrolidines, and hexahydro-1H-azepines of the general structural formula: ##STR1## wherein B is selected from: ##STR2## and R.sup.1, R.sup.1a, R.sup.2a, R.sup.3a, R.sup.3b, R.sup.4, R.sup.4a, R.sup.4b, R.sup.4c, R.sup.5, D, X, Y, n, x and y are as defined herein. These compounds promote the release of growth hormone in humans and animals. This property can be utilized to promote the growth of food animals to render the production of edible meat products more efficient, and in humans, to treat physiological or medical conditions characterized by a deficiency in growth hormone secretion, such as short stature in growth hormone deficient children, and to treat medical conditions which are improved by the anabolic effects of growth hormone. Growth hormone releasing compositions containing such compounds as the active ingredient thereof are also disclosed.