Abstract: The invention provides systems and methods for a vehicle-based cloud computing system (VCCS) for autonomous driving. This VCCS builds world models based on a series of complex scenario data to optimize sensing, prediction, planning, decision making, and control for autonomous driving. The VCCS can execute vehicle control algorithms, train general AI models, and make inferences to optimize autonomous driving. Specifically, it dynamically adjusts driving strategies based on long tail scenarios including but not limited to weather, work zone information, and traffic status, ensuring safe and efficient vehicle operation. Additionally, the VCCS can gather supplementary data from (a) a roadside unit (RSU) network, (b) another OBU, (c) a cloud platform, (d) a traffic control center/traffic control unit (TCC/TCU), and (e) a traffic operations center (TOC), thereby further improving control and efficiency in complex driving environments.

Abstract: This technology provides systems and methods for a vehicle computing system (VCS) for autonomous driving. This VCS furnishes End-to-End models that provide sensing, prediction, planning, decision-making, and control functions. The VCS executes vehicle control algorithms, trains general AI models, and makes inferences from those AI models. Specifically, a computing subsystem of the VCS performs computation methods that train a tensor-centered model and/or make inferences from a tensor-centered model. Additionally, the VCS gathers data from a roadside unit network, an onboard unit, a cloud platform, a traffic control center/traffic control unit, and a traffic operations center (TOC), thereby enhancing the safety and efficiency of autonomous driving.

Abstract: A misting fan includes a fan assembly including fan blades and a first electric motor for driving the fan blades to rotate; a body formed with a frame for supporting the fan assembly; and a nozzle disposed on the fan assembly and/or the body. The body is formed with a first accommodation cavity for water storage, and the first accommodation cavity is disposed around the fan assembly. In a circumferential direction, an angle of the first accommodation cavity around the fan assembly is greater than or equal to 180°. The misting fan further includes a pump component for pumping water in the first accommodation cavity to the nozzle.

Abstract: The present technology includes vertical cell dynamic random-access memory (DRAM) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. In addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.

Abstract: The present technology includes vertical cell dynamic random-access memory (DRAM) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. In addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.

Abstract: The present technology includes vertical cell dynamic random-access memory (DRAM) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. In addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.

Abstract: The present technology includes vertical cell array transistor (VCAT) with improved gate induced leakage current. The arrays one or more bit lines arranged in a first horizontal direction and one or more word lines arranged in a second horizontal direction. The arrays include one or more channels extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the bit lines intersect with a source/drain region of the plurality of channels, and the word lines intersect with gate regions of the plurality of channels. Arrays include where at least one word includes a first section adjacent to the source/drain region and a second section adjacent to the gate region, where the second section contains a high work function material and the first section contains a low work function material.

Abstract: A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.

Abstract: Vertical cell dynamic random-access memory (DRAM) arrays and methods of forming arrays with improved stability and word line resistivity are provided. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels. In addition, arrays include a bridge extending between a first channel of the plurality of channels and a second channel of the plurality of channels, where the first channel is spaced apart from the second channel in a row extending in the second horizontal direction. Arrays include a gate formed around at least a portion of the plurality of channels and the bridge.

Abstract: An audio system for measuring a delay is provided. The audio system includes an audio controller, an amplifier, a first digital to analog converter, and a measurement controller. The audio controller is programmed to transmit an audio input signal in a digital domain. The amplifier is programmed to process the audio input signal and to convert the processed audio input signal into a first processed audio signal in an analog domain. The amplifier is further programmed to amplify the first processed audio signal to provide an amplified audio output signal in the analog domain and to output the amplified audio output signal to drive one or more loudspeakers. The first digital to analog converter is programmed to convert the processed audio input signal into a second processed signal in the analog domain. The measurement controller is further programmed to determine a delay for the amplifier.

Abstract: Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) and corresponding methods. In an example, a stacked semiconductor structure is provided, where the stacked semiconductor structure includes a plurality of unit stacks formed on a substrate. Each unit stack has a semiconductor layer, a first dielectric layer, a first gate electrode, and a second dielectric layer of a capacitor portion. A lateral recess of the capacitor portion is open to a first opening through the unit stack. The method includes conformally depositing, in the lateral recess, a doped silicon layer on a lateral end of the semiconductor layer, performing a thermal annealing process after forming the doped silicon layer on the second lateral end. The method further includes forming a capacitor where the lateral recess was disposed, the capacitor contacting the doped silicon layer on the second lateral end of the semiconductor layer.

Abstract: This technology provides designs and methods for the vehicle on-board unit (OBU), which facilitates vehicle operations and control for connected automated vehicle highway (CAVH) systems. OBU systems provide vehicles with individually customized information and real-time control instructions for vehicle to fulfill the driving tasks such as car following, lane changing, route guidance. OBU systems also realize transportation operations and management services for both freeways and urban arterials. The OBU composed of the following devices: 1) a vehicle motion state parameter and environment parameter collection unit; 2) a multi-mode communication unit; 3) a location unit; 4) an intelligent gateway unit, and 5) a vehicle motion control unit. The OBU systems realize one or more of the following function categories: sensing, transportation behavior prediction and management, planning and decision making, and vehicle control.

Abstract: A fan includes: a support base; a fan assembly; a battery pack coupling portion located at an end of the fan adjacent to the support base and used for mounting a battery pack powering the fan assembly; and a clamping assembly disposed on the support base and used for clamping the support base to an external fixed component. The clamping assembly includes a first jaw, a second jaw, and an adjustment member. The adjustment member passes through the first jaw and the second jaw. The adjustment member is operated to increase or decrease an opening distance between the first jaw and the second jaw. The maximum opening distance formed between the first jaw and the second jaw is greater than or equal to 35 mm.

Abstract: Method for predicting a stability of a steel cylinder including: in response to the steel cylinder tilting toward a seaward side at an arbitrary rotation point, obtaining a safety factor for the steel cylinder tilting toward the seaward side by determining an anti-tilt moment and a tilt moment when the steel cylinder is tilted to the seaward side; under a same rotation point, in response to determining that the steel cylinder is rotated toward a land side, determining the safety factor for the steel cylinder tilting toward the land side; taking a smaller safety factor as the safety factor under the rotation point; re-selecting a new rotation point, determining a safety factor corresponding to the new rotation point, and taking a safety factor with a smallest value among all rotation points as a final safety factor; and generating, based on the final safety factor, an anti-tilt instruction.

Abstract: A method includes obtaining an average radio frequency exposure value over a target time window, where the target time window is a standard time window, determining a power threshold corresponding to the average radio frequency exposure value, where the power threshold is a preset power value corresponding to a preset value range to which the average radio frequency exposure value belongs, and controlling a transmit power of the wireless device based on the power threshold over a controlled time window.

Abstract: An antenna switching circuit, electronic device and method. The switching circuit includes a radio frequency processor, a radio frequency front-end, a first switch, and an antenna system with a plurality of antennas. The radio frequency processor receives a first radio frequency signal, generates a second radio frequency signal based on a loss value of the first switch, and transmits the second radio frequency signal to the first switch. The first switch selects, from a plurality of radio frequency channels in the radio frequency front-end, a radio frequency channel coupled with the radio frequency processor, and transmits the second radio frequency signal to a radio frequency channel. The radio frequency front-end receives and processes the second radio frequency signal to generate a third radio frequency signal and transmits it to the antenna system, which outputs the third radio frequency signal.

Abstract: Semiconductor processing methods and semiconductor structures are provided with improved doping in target regions. Methods include providing a substrate disposed within a semiconductor processing chamber, where one or more undoped target regions are formed on the substrate. Methods include subjecting the one or more undoped target regions to a pre-clean operation, removing at least a portion of any oxide present on the one or more undoped target regions. Methods include contacting the one or more undoped target regions with a gas phase dopant or a radical thereof, doping the one or more target regions.

Abstract: A spray fan includes a fan assembly including multiple fan blades; an electric motor for driving the fan blades to rotate; a spray head assembly configured to spray a liquid; a water pump configured to deliver the liquid; and an adjustment device configured to adjust a flowrate of the liquid and including a channel for the liquid to flow through, where a flowrate of the liquid flowing through the channel decreases and then increases.

Abstract: A semiconductor structure includes a first active region and a second active region on a substrate, a metal plug electrically connected to the first active region via a contact layer and an interface layer, a bit line electrically connected to the second active region via a bit line contact plug, and a bit line spacer encapsulating the bit line, wherein the first active region and the second active region are lightly n-type doped, the substrate is p-type doped, and the contact layer is epitaxially grown and n-type doped with a graded doping profile that increases from an interface with the first active region to an interface with the interface layer.