Abstract: The present invention relates to a temperature-stable dielectric ceramic composition for multilayer ceramic capacitors. The said dielectric composition comprises barium titanate and additives, wherein the barium titanate ranges from 94 to 99 mol % of the said composition, and the additives range from 1 to 6 mol % of the said composition. The additives comprise oxides of Mg, Ca, Ba, Si and Mn, and oxides of one or more elements selected from the group consisting of Co, Sr, Ti and Fe, and an oxide of Re, or carbonates, hydroxide, oxalates, acetates or nitrates of the above elements. Re represents one or more elements selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. After being sintered at 1200° C. to 1350° C. under reducing atmosphere, the room-temperature dielectric constant of the composition is 2000 to 3500 and its temperature coefficient of capacitance satisfies X7R characteristic (EIA standards).

Abstract: The present invention relates to a temperature-stable dielectric ceramic composition for multilayer ceramic capacitors. The said dielectric composition comprises barium titanate and additives, wherein the barium titanate ranges from 94 to 99 mol % of the said composition, and the additives range from 1 to 6 mol % of the said composition. The additives comprise oxides of Mg, Ca, Ba, Si and Mn, and oxides of one or more elements selected from the group consisting of Co, Sr, Ti and Fe, and an oxide of Re, or carbonates, hydroxide, oxalates, acetates or nitrates of the above elements. Re represents one or more elements selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu. After being sintered at 1200° C. to 1350° C. under reducing atmosphere, the room-temperature dielectric constant of the composition is 2000 to 3500 and its temperature coefficient of capacitance satisfies X7R characteristic (EIA standards).

Abstract: This invention relates to the formula and preparation method for a multi-layer chip inductor material used in very high frequencies. The main composition of this material is planar hexagonal soft magnetic ferrite, and ingredient is low temperature sintering aid. Preparation method is a synthetic method of solid phase reaction. The sintering aid is prepared by secondary doping. By the process of ball grinding, drying, pre-calcining, ball grinding, drying, granulating, forming, sintering, and so forth, very high frequency inductor material of superior quality is obtained, realizing low temperature sintering under a temperature lower than 900° C. This invention is of low cost, high performance, suitable for multi-layer chip inductors at very high frequencies of 300M-800 MHz.

Abstract: This invention relates to the formula and preparation method for a multi-layer chip inductor material used in very high frequencies. The main composition of this material is planar hexagonal soft magnetic ferrite, and ingredient is low temperature sintering aid. Preparation method is a synthetic method of solid phase reaction. The sintering aid is prepared by secondary doping. By the process of ball grinding, drying, pre-calcining, ball grinding, drying, granulating, forming, sintering, and so forth, very high frequency inductor material of superior quality is obtained, realizing low temperature sintering under a temperature lower than 900° C. This invention is of low cost, high performance, suitable for multi-layer chip inductors at very high frequencies of 300M-800 MHz.