Patents by Inventor Zhongyuan Jia

Zhongyuan Jia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of a layer on a semiconductor substrate
    Patent number: 10096473
    Abstract: Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700° C. While the substrate temperature is elevated, a group V precursor may be flowed into the deposition chamber in order to transform the hydrogen terminated (Si—H) surface of the passivation layer into an Arsenic terminated (Si—As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may be flowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may be flowed in order to form a bulk III-V layer.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: October 9, 2018
    Assignee: AIXTRON SE
    Inventors: Maxim Kelman, Zhongyuan Jia, Somnath Nag, Robert Ditizio
  • Planar nonpolar group-III nitride films grown on miscut substrates
    Patent number: 9828695
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: November 28, 2017
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • FORMATION OF A LAYER ON A SEMICONDUCTOR SUBSTRATE
    Publication number: 20170294306
    Abstract: Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700° C. While the substrate temperature is elevated, a group V precursor may be flowed into the deposition chamber in order to transform the hydrogen terminated (Si—H) surface of the passivation layer into an Arsenic terminated (Si—As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may be flowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may be flowed in order to form a bulk III-V layer.
    Type: Application
    Filed: April 7, 2016
    Publication date: October 12, 2017
    Inventors: Maxim Kelman, Zhongyuan Jia, Somnath Nag, Robert Ditizio
  • PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
    Publication number: 20160230312
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an ?-axis direction comprising a 0.15° or greater miscut angle towards the ?-axis direction and a less than 30° miscut angle towards the ?-axis direction.
    Type: Application
    Filed: April 20, 2016
    Publication date: August 11, 2016
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • Planar nonpolar group-III nitride films grown on miscut substrates
    Patent number: 9340899
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: May 17, 2016
    Assignee: The Regents of the University of California
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
    Publication number: 20140291694
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Application
    Filed: June 16, 2014
    Publication date: October 2, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • Planar nonpolar group-III nitride films grown on miscut substrates
    Patent number: 8791000
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: July 29, 2014
    Assignee: The Regents of the University of California
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
    Publication number: 20140138679
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Application
    Filed: January 27, 2014
    Publication date: May 22, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • Planar nonpolar group-III nitride films grown on miscut substrates
    Patent number: 8691671
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an ?-axis direction comprising a 0.15° or greater miscut angle towards the ?-axis direction and a less than 30° miscut angle towards the ?-axis direction.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: April 8, 2014
    Assignee: The Regents of the University of California
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. Denbaars, Shuji Nakamura, James S. Speck
  • PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
    Publication number: 20120175739
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an ?-axis direction comprising a 0.15° or greater miscut angle towards the ?-axis direction and a less than 30° miscut angle towards the ?-axis direction.
    Type: Application
    Filed: March 22, 2012
    Publication date: July 12, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako HIRAI, Zhongyuan JIA, Makoto SAITO, Hisashi YAMADA, Kenji ISO, Steven P. DENBAARS, Shuji NAKAMURA, James S. SPECK
  • Planar nonpolar m-plane group III nitride films grown on miscut substrates
    Patent number: 8158497
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: April 17, 2012
    Assignee: The Regents of the University of California
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
    Publication number: 20080308907
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Application
    Filed: June 16, 2008
    Publication date: December 18, 2008
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck