Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a peripheral circuit on the substrate, a memory stack including interleaved conductive layers and dielectric layers above the peripheral circuit, an N-type doped semiconductor layer above the memory stack, a plurality of channel structures each extending vertically through the memory stack into the N-type doped semiconductor layer, a conductive layer in contact with upper ends of the plurality of channel structures, at least part of which is on the N-type doped semiconductor layer, and a source contact above the memory stack and in contact with the N-type doped semiconductor layer.

Abstract: A passively powered image capture device includes a remote execution unit structured to receive commands from a base station and an imaging device coupled to the remote execution unit. The imaging device is structured to be controlled by the remote execution unit based on the commands received by the remote execution unit. The passively powered image capture device also includes an antenna and energy harvesting circuitry coupled to the antenna, the remote execution unit and the imaging device. The energy harvesting circuitry is structured to convert RF energy received by the antenna to DC energy for powering the remote execution unit and the imaging device.