WORKPIECE PLATING AND RINSE APPARATUS AND METHOD

Abstract

The present disclosure is directed to a fluid head that is configured to eject a first fluid (e.g., a liquid state fluid) and a second fluid (e.g., a gaseous state fluid). The fluid head is movable in a rotatable-fashion and a translatable-fashion such that the fluid head may be utilized to increase a speed and decrease a period of time for cleaning and drying a workpiece after an electro-chemical polishing (ECP) process or step. The fluid head may also be utilized to increase a speed and decrease a period of time for beveling an edge of a conductive layer on the workpiece. The present disclosure is also directed to methods for cleaning and drying the workpiece as well as beveling the conductive layer of the workpiece utilizing the fluid head.

Description

BACKGROUND

To produce semiconductor devices, a semiconductor substrate, such as a silicon wafer is processed and refined through a sequence of process steps such as diffusion, ion implantation, chemical vapor deposition, photolithography, etch, physical vapor deposition, chemical mechanical polishing, and electrochemical plating (ECP).

ECP is generally used to deposit one or more layers on the semiconductor substrate. For example, metals such as copper and aluminum are deposited through the ECP step. In addition to adding one or more layers on the semiconductor substrate, the ECP is implemented to fill metals such as copper and aluminum into trench structures (interconnect structures or gaps) on the semiconductor substrate.

For example, integrated circuits may include numerous passive and active devices such as transistors, capacitors, resistors, and diodes. These active and passive devices, which may be initially isolated from one another, may be interconnected together through conductive wiring or traces to form functional circuits in the integrated circuits. Such wiring or electrical traces may be formed, processed, or refined through multiple metallization layers including metal lines, providing electrical connections in the integrated circuits. These electrical connections may be conductive vias, conductive traces, conductive lines, conductive wiring, or some other type of electrical connection. These conductive traces, lines, or vias may be commonly referred to as interconnect structures. These interconnect structures may limit performance and the density of advanced integrated circuits.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a perspective side view of a workpiece case and a fluid hose.

FIG. 2 is a flowchart of a method for performing a plating process on a workpiece utilizing the workpiece case and the fluid hose as shown in FIG. 1.

FIG. 3 is a plurality of side views of the method for performing the plating process as in the flowchart of FIG. 2 on the workpiece utilizing the workpiece case and the fluid hose as shown in FIG. 1.

FIG. 4 is a flowchart of a method for performing a refining process on a workpiece plated with a conductive layer.

FIG. 5A is a side view of the method for performing the refining process as in the flowchart of FIG. 4 on the workpiece plated with the conductive layer.

FIG. 5B is a side view of the method for performing the refining process as in the flowchart of FIG. 4 on the workpiece plated with the conductive layer.

FIG. 5C is a side view of the method for performing the refining process as in the flowchart of FIG. 4 on the workpiece plated with the conductive layer.

FIG. 6A is a perspective side view of a workpiece case and a movable and rotatable fluid head, in accordance with some embodiments.

FIG. 6B is a perspective side view of the workpiece case and the movable and rotatable fluid head, in accordance with some embodiments.

FIG. 6C is a perspective side view of the workpiece case and the movable and rotatable fluid head, in accordance with some embodiments.

FIG. 7 is a flowchart of a method for performing a plating process on a workpiece utilizing the workpiece case and the fluid head as shown in FIGS. 6A-6C, in accordance with some embodiments.

FIG. 8 is a plurality of side views for performing a plating process on a workpiece utilizing the workpiece case and the fluid head as shown in FIGS. 6A-6C, in accordance with some embodiments.

FIG. 9 is a flowchart of a method for performing a refining process on a workpiece plated with a conductive layer, in accordance with some embodiments.

FIG. 10A is a side view of the method for performing the refining process as in the flowchart of FIG. 9 on the workpiece plated with the conductive layer, in accordance with some embodiments.

FIG. 10B is a side view of the method for performing the refining process as in the flowchart of FIG. 9 on the workpiece plated with the conductive layer, in accordance with some embodiments.

FIG. 10C is a side view of the method for performing the refining process as in the flowchart of FIG. 9 on the workpiece plated with the conductive layer, in accordance with some embodiments.

FIG. 10D is a side view of the method for performing the refining process as in the flowchart of FIG. 9 on the workpiece plated with the conductive layer, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

Generally, semiconductor devices (e.g., semiconductor dice, semiconductor integrated circuits, etc.) are manufactured to include various conductive structures, which may include conductive traces, conductive vias, conductive lines, or some other similar or like conductive structures that are formed to provide electrical pathways and connections along which electrical signals may travel. For example, these various conductive structures may be formed by performing one or more patterning steps and one or more plating steps. For example, after patterning step is carried out forming a pattern in which a conductive material is to be formed within, an electrochemical plating (ECP) step is performed to form the conductive material within the pattern. Alternatively, an ECP step may be performed forming a conductive layer on a surface of the workpiece, which may be a substrate, and the conductive layer may then be patterned to structure the various conductive structures, and, therefore, forming the electrical pathways or connections of the semiconductor devices. When performing the ECP step, the surface of the workpiece may be submerged or exposed to an ECP fluid in an ECP bath in which the surface of the workpiece is wetted by the ECP fluid in the ECP bath. After the ECP step is carried out in the ECP bath forming a conductive layer on the surface of the workpiece, the surface of the workpiece is removed from the ECP fluid in the ECP bath. After the surface of the workpiece is removed from the ECP fluid in the ECP bath, some of the ECP fluid may still be present and wetted on the surface of the workpiece. This ECP fluid that remains on the surface of the workpiece may be washed away with water (e.g., H₂O, distilled water, etc.) such that the ECP fluid is no longer present on the surface of the workpiece. After the water is utilized to wash away the remaining ECP fluid, the water is allowed to evaporate or dry such that little to no fluid remains on the surface of the workpiece at which the conductive layer has now been formed through the ECP step. However, washing away the ECP fluid with the water and allowing the water to then evaporate or dry results in increased time in which the workpiece is not being refined by other tools or steps within a semiconductor manufacturing plant (FAB).

In view of the above discussion, the present disclosure is directed to embodiments that reduce an overall time in which an ECP fluid is washed away by water and the drying or evaporating of the water. Decreasing the time between processing steps in the FAB due to the ECP fluid being washed away and the water being dried or evaporated increases units per hour (UPH) that the FAB may manufacture within a period of time as there is less downtime between steps in processing the workpiece to manufacture semiconductor devices (e.g., semiconductor dice, semiconductor integrated circuits, etc.).

For example, in some embodiments, a movable and rotatable fluid head, which may be configured to eject a liquid fluid (e.g., water) and a gaseous fluid (e.g., air, noble gas (e.g., Argon), etc.), is present and utilized to clean and dry a workpiece to decrease a period of time between processing steps of the workpiece increasing the UPH by the FAB. In some embodiments of the present disclosure, the fluid head may further include a static eliminator to prevent or reduce a likelihood of contaminant particles or debris remaining statically attracted or stuck to a workpiece. The static eliminator may be present to also prevent or reduce the likelihood of a static discharge that may occur (e.g., when drying the wafer by expelling the gaseous fluid through the fluid head). Utilizing the fluid head to dry the wafer by expelling the gaseous fluid decreases the period of time between processing steps of the workpiece increasing the UPH by the FAB while preventing or reducing the likelihood of a static discharge event that may cause damage to the workpiece while drying the workpiece. Further details of various embodiments of the present disclosure that decrease time between processing steps and increase the UPH by the FAB will be discussed in detail as follows herein.

FIG. 1 is a perspective side view of a workpiece case 100 and a cleaning fluid hose 102. The workpiece case 100 includes a first portion 104 and a second portion 106 that is positioned below the first portion 104 and is overlapped by the first portion 104, and the cleaning fluid hose 102 is fluidically coupled to a fluid source 108 through a fluid pathway 110. The workpiece case 100 may be referred to as a clamshell case. The cleaning fluid hose 102 is fixed in position such that cleaning fluid hose 102 cannot rotate or move and remains in a fixed position. In other words, the cleaning fluid hose 102 does not rotate or move.

The first portion 104 of the workpiece case 100 is coupled to the second portion 106 of the workpiece case 100 by one or more members 112 that extend from the first portion 104 to the second portion 106. The members 112 allow for at least one of the first portion 104 or the second portion 106 to move relative to the other. For example, while not shown in FIG. 1, in some embodiments, the members 112 may be slidably coupled to the first portion 104 and fixedly coupled to the second portion 106 allowing for the members 112 to slide along the first portion 104 such that the second portion 106 moves upwards and towards the first portion 104 from an opened position to a closed position. This allows for a workpiece (e.g., a wafer, a substrate, etc.) to be loaded into the workpiece case 100 when the workpiece case 100 is in the opened position (see FIG. 1) between the first portion 104 and the second portion 106, and then the second portion 106 may be moved towards the first portion 104 such that the workpiece is clamped between the first portion 104 and the second portion 106 when the workpiece case 100 is in a closed position. When the workpiece case 100 is in the closed position, the workpiece is held in a stationary position within the workpiece case 100 relative to the first portion 104 and the second portion 106, respectively, as the workpiece is clamped between the first portion 104 and the second portion, respectively.

The first portion 104 of the workpiece case 100 further includes a protrusion portion 114 and a peripheral portion 116. The protrusion portion 114 is spaced laterally inward from the members 112 and laterally inward from the peripheral portion 116. The protrusion portion 114 may be at a central region of the first portion 104.

The second portion 106 of the workpiece case further includes an opening 118 and a lip portion 120. The opening 118 is spaced laterally inward from the members 112 and laterally inward from the lip portion 120.

The cleaning fluid hose 102 further includes an outlet 122 through which a fluid from the fluid source 108 may be ejected. For example, when the fluid source 108 contains water (H₂O), the water is provided from the fluid source 108 through the fluid pathway 110 to the cleaning fluid hose 102 such that the water may be ejected from the outlet 122 of the cleaning fluid hose 102. A valve 124 may be present along the fluid pathway 110 to control a flow of fluid from the fluid source 108 to the cleaning fluid hose 102. For example, when the valve 124 is opened, the fluid from the fluid source 108 travels through the fluid pathway 110 to the cleaning fluid hose 102 to be ejected from the outlet 122 of the fluid hose. Alternatively, when the valve 124 is closed, the fluid from the fluid source 108 is blocked or prevented from traveling through the fluid pathway 110 to the cleaning fluid hose 102.

FIG. 2 is a flowchart 126 of a method for performing a plating process on a workpiece utilizing the workpiece case 100 and the cleaning fluid hose 102 as shown in FIG. 1. The flowchart 126 includes a first step 128, a second step 130, a third step 132, a fourth step 134, and a fifth step 136. The details of each of these respective steps 128, 130, 132, 134, 136 of the flowchart 126 will be discussed in detail with respect to FIG. 3 as follows herein.

FIG. 3 is a plurality of side views of the method for performing the plating process as in the flowchart 126 of FIG. 2 on a workpiece 138 utilizing the workpiece case 100 and the cleaning fluid hose 102 as shown in FIG. 1.

In the first step 128, the workpiece 138 is loaded into the workpiece case 100. The workpiece 138 is loaded into the workpiece case 100 when the workpiece case 100 is in the opened position (see FIG. 1). Once the workpiece 138 is loaded into the workpiece case 100, a first surface 158 of the workpiece 138 abuts and is on the lip portion 120 of the second portion 106 of the workpiece case 100. Once the workpiece 138 has been loaded into the workpiece case 100, a second surface 160 (see FIGS. 5A-5C and 10A-10D) of the workpiece 138 opposite to the first surface 158 of the workpiece 138 faces away and towards the protrusion portion 114 of the first portion 104 of the workpiece case 100. When the workpiece 138 is positioned and loaded within the workpiece case 100, the workpiece 138 is laterally adjacent to the members 112 and the workpiece 138 overlaps the opening 118 in the second portion 106.

In the first step 128, after the workpiece 138 has been loaded into the workpiece case 100 such that the workpiece 138 is between the first and second portions 104, 106, the workpiece case 100 is moved from the opened position to the closed position. Once the workpiece case 100 is in the closed position, the workpiece 138 is clamped between the first portion 104 and the second portion 106 such that the workpiece 138 is held in a stationary position within the workpiece case 100. For example, the protrusion portion 114 abuts and clamps down onto the second surface 160 of the workpiece 138 and the lip portion 120 abuts and clamps up onto the first surface 158 of the workpiece 138. The workpiece 138 is then clamped between the protrusion portion 114 and the lip portion 120 resulting in the workpiece 138 being held in the stationary position within the workpiece case 100 such that the workpiece 138 overlaps the opening 118 in the second portion 106. The workpiece 138 overlapping the second portion 106 results in all or part of the first surface 158 of the workpiece 138 being exposed by the opening 118 in the second portion 106 of the workpiece case 100.

After the first step 128 in which the workpiece 138 is loaded into the workpiece case 100 and the workpiece case 100 is clamped down onto the workpiece 138, in a second step 130 the first surface 158 of the workpiece 138 is exposed to an ECP fluid 140 within an ECP bath 142. The ECP fluid 140 may be an electrolytic fluid such as an electrolytic fluid that includes copper sulfate (e.g., CuSO4), a CuSO4 based electrolytic fluid, a CuSO4 electrolytic fluid, or some other or similar or like type fluid that may be utilized to carry out or perform an ECP process. For example, the first surface of the workpiece 138 may be submerged within the ECP fluid 140 within the ECP bath 142 by utilizing an end effector (not shown) of a transfer robot or some other similar or like mechanical system to pick up and submerge the workpiece case 100 and the first surface 158 of the workpiece 138 into the ECP fluid 140. After the first surface 158 of the workpiece 138 is submerged within the ECP fluid to expose the first surface 158 of the workpiece 138 to the ECP fluid, the ECP process is carried out or performed to form one or more conductive plating layers on the first surface 158 of the workpiece 138. In some embodiments, the end effector of the transfer robot may continuously support and hold onto the workpiece case 100 when performing forming the conductive layer on the first surface 158 of the workpiece 138 utilizing the ECP fluid 140. This ECP process as discussed herein may be a known ECP process within the semiconductor industry, and, therefore, for the sake of simplicity and brevity, the details of the ECP process will not be discussed herein.

After the second step 130 in which the first surface of the workpiece 138 is submerged within the ECP fluid 140 within the ECP bath 142 to carry out or perform the ECP process, in a third step 132 the first surface of the workpiece 138 is removed from the ECP fluid 140 within the ECP bath 142. For example, the first surface 158 of the workpiece 138 may be removed from the ECP fluid 140 within the ECP bath 142 by utilizing the end effector in the opposite manner as submerging the first surface 158 of the workpiece 138. After the first surface 158 of the workpiece 138 has been removed from the ECP fluid 140, the workpiece case 100 and the workpiece 138, which is within the workpiece case 100, is rotated to facilitate removal of excess of the ECP fluid 140 that remains present on the workpiece case 100 and the first surface 158 of the workpiece 138. This rotation of the workpiece case 100 and the workpiece 138 is represented by arrows 144. The rotation of the workpiece case 100 and the workpiece 138 as represented by the arrows 144 may be in a counter-clockwise direction or may be in a clockwise direction.

After the third step 132 in which the first surface 158 of the workpiece 138 is removed from the ECP fluid 140 and the rotation as represented by the arrows 144 of the workpiece case 100 commences, in a fourth step 134 a fluid 146 from the fluid source 108 (not shown for ease of simplicity of FIG. 3) is introduced to the cleaning fluid hose 102. The fluid 146 from the fluid source 108 is introduced to the cleaning fluid hose 102 by opening the valve 124 along the fluid pathway 110. The fluid 146 introduced into the cleaning fluid hose 102 from the fluid source 108 is then ejected at the workpiece case 100 and the first surface 158 of the workpiece 138 to further facilitate removal of excess of the ECP fluid 140 from the workpiece case 100 and the first surface 158 of the workpiece 138. As the cleaning fluid hose 102 is in the fixed position and does not rotate or move, the cleaning fluid hose 102 remains in the fixed position as the fluid is ejected from the outlet 122 of the cleaning fluid hose 102 at the workpiece case 100 and the first surface 158 of the workpiece 138. The fluid 146 ejected from the cleaning fluid hose 102 may be water (H₂O), may be distilled water, or may be some other type of fluid of a suitable type for cleaning and removing excess of the ECP fluid 140 from the workpiece case 100 and the first surface 158 of the workpiece 138. The fluid 146 ejected by the cleaning fluid hose 102 may be referred to as a cleaning fluid. The fluid 146 ejected from the outlet 122 of the cleaning fluid hose 102 is in a liquid form or state. The ejection of the fluid 146 may be in the form of droplets, a continuous stream, or in some other manner of ejecting the fluid 146 from the outlet 122 of the cleaning fluid hose 102, respectively. The fluid 146 is ejected from the outlet 122 of the fluid hose 102 at the workpiece case 100 and the first surface 158 of the workpiece 138 as the workpiece case 100 and the workpiece 138 are rotating as represented by the arrows 144.

Rinsing or washing the workpiece case 100, the workpiece 138, and the conductive layer 156 with the fluid 146, which is in the liquid state, may remove some contaminant particles or debris that remain on respective surfaces of the workpiece case 100, the workpiece 138, and the conductive layer 156 after performing the first, second, and third steps 128, 130, 132, respectively. However, the fluid 146 ejected from the outlet 122 of the fluid hose 102 to wash or rinse away these contaminant or debris particles may not remove contaminant or debris particles from the respective surfaces of the workpiece case 100, the workpiece 138, and the conductive layer 156 due to static charge that may cause at least some of the contaminant or debris particles to be attracted to the respective surfaces of the workpiece case, the workpiece 138, and the conductive layer 156. In other words, the fluid 146 may not wash or rinse away the contaminant or debris particles that are stuck to or continue to abut the respective surfaces of the workpiece case 100, the workpiece 138, and the conductive layer 156 due to static forces. These contaminant or debris particles that remain stuck to or continue to abut these respective surfaces due to the static forces or charges may cause defects to be generated in semiconductor devices (e.g., semiconductor dice, semiconductor packages, etc.) further refined or processed after carrying out the method in the flowchart 126 within the FAB.

After the fourth step 134 in which the fluid 146 is ejected from the outlet 122 of the fluid hose 102, in a fifth step 136 the workpiece case 100 is opened and the workpiece 138 is removed. However, generally, before the workpiece 138 is removed from the workpiece case 100, the workpiece case 100 and the workpiece 138 are allowed to dry before removing the workpiece 138 for further processing and refining of the workpiece 138 within the FAB to manufacture the semiconductor devices (e.g., semiconductor die, semiconductor integrated circuits, semiconductor chips, etc.). This drying time increases the overall time that the semiconductor devices take to manufacture utilizing the FAB, which causes the UPH of the FAB to decrease as the drying time increases the length of time needed to manufacture a complete one of the semiconductor devices.

The workpiece 138 may be removed from within the workpiece case 100 by opening the workpiece case 100 by moving the second portion 106 downward and away from the first portion 104 exposing the workpiece 138. An end effector of a transfer robot may then remove the workpiece 138 from the workpiece case 100. When the workpiece 138 is removed from the workpiece case 100, one or more conductive layers have been formed on the first surface 158 of the workpiece 138 by performing the method of the flowchart 126 as discussed above.

FIG. 4 is a flowchart 148 of a method of performing a refining process on the workpiece 138 with a conductive layer 156 present on the workpiece. The flowchart 148 includes a first step 150, a second step 152, a third step 154, and a fourth step 155. The details of each of these respective steps 150, 152, 154, 155 will be discussed in further detail with respect to FIGS. 5A-5C as follow herein.

FIGS. 5A-5C are side views of the method for performing the refining process as in the flowchart 148 of FIG. 4. The workpiece 138 may be the workpiece 138 on which the conductive layer 156 is formed by performing the method in the flowchart 126 as discussed earlier herein. The conductive layer 156 is present on the first surface 158, which may be the first surface 158 of the workpiece 138 as discussed earlier herein. The workpiece 138 further includes the second surface 160 of the workpiece 138 that is opposite to the first surface 158, and the second surface 160 may be the second surface 160 of the workpiece 138 as discussed earlier herein.

As shown in FIG. 5A, in a first step 150 a peripheral region or edge 162 of the workpiece 138 and the conductive layer 156 are exposed to an acidic fluid 164 through an acidic fluid hose 166. The acidic fluid 164 is ejected through an outlet 168 of the acidic fluid hose 166. The acidic fluid 164 may be a weak acid, for example, hydrogen peroxide (H₂O₂). As shown in FIG. 5A, the peripheral region or edge 162 includes respective sidewalls 162a, 162b of the workpiece 138 and the conductive layer 156, which may be substantially coplanar with each other as shown in FIG. 5A. The conductive layer 156 may be a copper material, a gold material, a silver material, or some other suitable type of conductive material that may be plated on the first surface 158 of the workpiece 138. In the first step 150, the peripheral region or edge 162 is exposed to the acidic fluid 164 as the workpiece 138 and the conductive layer 156 are rotating, which is represented by arrows 170. The rotation of the workpiece 138 and the conductive layer 156 may be in a counter-clockwise direction or may be in a clockwise direction.

The sidewall 162b of the conductive layer 156 as shown in FIG. 5A may be referred to as a first sidewall or first edge of the conductive layer 156. The first sidewall or first edge of the conductive layer 156 may be substantially flush or coplanar with the sidewall or edge 162a of the workpiece 138.

After the first step 150 in which the peripheral region or edge 162 is exposed to the acidic fluid 164 by utilizing the acidic fluid hose 166, in a second step 152 the workpiece 138 and the conductive layer 156 continue to rotate as represented by the arrows 170. This rotation along with the exposure of the peripheral region or edge 162 to the acidic fluid 164 facilitates and results in the removal of respective portions of the conductive layer 156 such that the sidewall 162b of the conductive layer 156 is moved laterally inward and away from the sidewall 162a of the workpiece 138. This removal of the respective portion of the conductive layer 156 from the peripheral region or edge 162 may result in the edge of the conductive layer 156 at the sidewall 162b becoming beveled. The removal of the respective portion of the conductive layer 156 may be referred to as a beveling step.

The sidewall 162b of the conductive layer 156 as shown in FIG. 5B may be referred to as a second sidewall or second edge of the conductive layer 156 that is spaced laterally inward from where the first sidewall or first edge of the conductive layer 156 was previously present before carrying out the second step 152. The second sidewall or second edge of the conductive layer 156 is spaced laterally inward from the sidewall or edge 162a of the workpiece 138.

After the second step 152 in which the rotation as represented by the arrows 170 continues after exposing the peripheral region or edge 162 to the acidic fluid 164, in the third step 154 a fluid 172 is ejected from an outlet 174 of a cleaning fluid hose 176. The fluid 172 may be water (H₂O). The fluid 172 may be referred to as a cleaning fluid. The conductive layer 156 is exposed to the fluid 172 to remove excess of the acidic fluid 164 from the conductive layer 156.

After the third step 154 in which the conductive layer 156 is exposed to the fluid 172, in the fourth step 155 the workpiece 138 and the conductive layer 156 are allowed to dry after being exposed to the fluid 172. However, providing this drying time for the workpiece 138 and the conductive layer 156 to dry off after being exposed to the fluid 172, delays any further refining or processing of the workpiece 138 and the conductive layer 156, which decreases the UPH by the FAB.

The respective portion of the conductive layer 156 with the acidic fluid 164 may be cleaned, removed, or both to prevent or reduce the likelihood of defects (e.g., short-circuiting pathways, mechanical delamination issues, etc.) near or at the peripheral region or edge 162 of the workpiece 138. For example, cleaning, beveling, removing, or a combination of all of these being carried out on the respective portion of the conductive layer 156 at the peripheral region or edge 162 may avoid, prevent, or decrease the likelihood of peeling or delamination in respective layers that may be later formed in subsequent steps on the conductive layer 156 during further processing to form a semiconductor device that may include the workpiece 138 and the conductive layer 156 as shown in FIGS. 5A-5C. For example, cleaning, beveling, removing, or a combination of all of these being carried out on the respective portion of the conductive layer 156 at the peripheral region or edge 162 may prevent or reduce the likelihood of generating or forming short-circuit pathways or electrical cross-talk pathways in a complete or final electronic device (e.g., semiconductor die, semiconductor package, etc.).

FIGS. 6A-6C are perspective side views of the workpiece case 100 and a movable and rotatable fluid head 200. The embodiment as shown in FIGS. 6A-6C of the present disclosure has some of the same or similar features as those described earlier herein with respect to FIGS. 1-5C, and, therefore, the same or similar features have the same reference numerals. For the sake of simplicity and brevity of the present disclosure, the details of these features that are the same or similar between the embodiment as shown in FIGS. 6A-6C and FIGS. 1-5C of the present disclosure will not be reproduced herein. Instead, the following discussion will focus on additions or differences between the embodiment as shown in FIGS. 6A-6C and the features as shown in FIGS. 1-5C of the present disclosure.

The movable and rotatable fluid head 200 may be in mechanical cooperation with an actuator 202. In some embodiments, the actuator 202 is configured to either rotate the fluid head 200 in a counterclockwise direction or a clockwise direction in a single degree-of-freedom or in two degrees-of-freedom as presented by a first arrow 204 and a second arrow 206, respectively. The first arrow 204 represents rotation of the fluid head 200 about a first axis 208 that is vertical based on the orientation of the fluid head 200 as shown in FIG. 6A. The second arrow 206 represents rotation of the fluid head 200 about a second axis 210 that is horizontal based on the orientation of the fluid head 200 as shown in FIG. 6A. In some embodiments, the actuator 202 may be configured to translate the fluid head 200 in directions along the first axis 208 and the second axis 210. The rotatable and movable nature of the fluid head 200 allows for the fluid head 200 to eject a fluid at the workpiece case 100 and the workpiece 138, which will be discussed in further detail later herein, to speed up a process for cleaning and drying the workpiece case 100 and the workpiece 138 to decrease cleaning and drying time and increase UPH of the FAB.

The fluid head 200 includes an outlet 212 through which the fluid is ejected from the fluid head 200. A static eliminator 214 may be coupled to or integrated within the fluid head 200. In some embodiments, the static eliminator 214 may be fully incorporated within the fluid head 200 itself, may be have features or structures external to the fluid head, may be fully external to the fluid head 200 itself, or may be some other type of combination of these various embodiments. The static eliminator 214 is configured to prevent or reduce the likelihood of contaminant particles or debris from being statically attracted or stuck to a respective workpiece to avoid generating defects or damage in the respective workpiece as the respective workpiece is further refined and processed in the FAB by workpiece refining and processing tools within the FAB. The static eliminator may also prevent or reduce the likelihood of a static discharge of static electricity when the fluid is discharged from the outlet 212 of the fluid head 200 to avoid damaging the workpiece 138 or generating defects in the workpiece 138 when refining or processing the workpiece 138 into a complete and manufactured semiconductor or electronic device (e.g., semiconductor package, semiconductor die, etc.). The details of the functionality of the static eliminator 214 will be discussed in greater detail later herein.

The fluid head 200 is in fluid communication with a three-way valve 216. A liquid fluid source 218 is in fluid communication with the three-way valve 216 along a first fluid pathway 220, and a gaseous fluid source 222 is in fluid communication with the three-way valve 216 along a second fluid pathway 224. When the three-way valve 216 is fully closed, a liquid fluid 217 (e.g., in a liquid state) from the liquid fluid source 218 and a gaseous fluid 219 (e.g., in a gaseous state) is prevented or blocked from passing through the three-way valve 216 to the fluid head 200. When the three-way valve 216 is in a first opened position, the liquid fluid 217 from the liquid fluid source 218 travels along the first fluid pathway 220 and through the three-way valve 216 to the outlet 212 of the fluid head 200 while the three-way valve 216 prevents or blocks the gaseous fluid from reaching the fluid head 200. When the three-way valve 216 is in a second opened position different from the first opened position, the gaseous fluid from the gaseous fluid source 222 travels along the second fluid pathway 224 and through the three-way valve to the outlet 212 of the fluid head 200 while the three-way valve 216 prevents or blocks the liquid fluid 217 from reaching the fluid head 200. The fluid head 200 ejects the liquid fluid 217 from the outlet 212 when the fluid head 200 receives the liquid fluid 217, and the fluid head 200 ejects the gaseous fluid from the outlet 212 when the fluid head 200 receives the gaseous fluid.

The liquid fluid 217 being ejected from the outlet 212 of fluid head 200 may be seen in FIG. 6B of the present disclosure. The gaseous fluid 219 being ejected from the outlet 212 of the fluid head 200 may be seen in FIG. 6C of the present disclosure.

Unlike the fluid hose 102, which is only configured to eject the liquid fluid 217 from the fluid source 108 as discussed earlier herein, the fluid head 200 is configured to eject both the liquid fluid 217 from the liquid fluid source 218 and the gaseous fluid from the gaseous fluid source 222, respectively. Unlike the fluid hose 102, which is held in the stationary or fixed position as discussed earlier herein, the fluid head 200 is rotatable and movable by activating the actuator. The fluid head 200 being configured to eject both the liquid fluid 217 and the gaseous fluid will decrease the cleaning and drying time as compared to utilizing the fluid hose 102 such that the UPH of the FAB may be increased utilizing the fluid head 200 instead the fluid hose 102. The fluid head 200 being configured to rotate and move will decrease the cleaning and drying time as compared to utilizing the fluid hose 102 such that the UPH of the FAB may be increased utilizing the fluid head 200 instead of the fluid hose 102. The details of the decreased cleaning and drying time utilizing the fluid head 200 instead of the fluid hose 102 will be discussed in detail later herein with respect to FIGS. 7-10D of the present disclosure.

In some embodiments, a controller 226 is in electrical communication with the actuator 202, the static eliminator 214, and the three-way valve 216 for controlling these various features during a cleaning and drying process of the workpiece case 100 and the workpiece 138. For example, the controller 226 may be a processor, a microprocessor, memory, memory processor, or some other similar or like type of process or controller for controlling these various features to perform the cleaning and drying process.

FIG. 7 is a flowchart 228 of a method for performing a plating process on the workpiece 138 utilizing the fluid head 200 as shown in FIGS. 6A-6C instead of the fluid hose 102. Similar to the flowchart 126 that includes the first step 128, the second step 130, the third step 132, and the fifth step 136, the flowchart 228 includes the first step 128, the second step 130, the third step 132, and the fifth step 136. However, the flowchart 228 does not include the fourth step 134 of the flowchart 126, and, instead, the flowchart 228 includes a sixth step 230 and a seventh step 232 that occur between the third step 132 and the fifth step 136. The sixth step 230 occurs before the seventh step 232 as shown in FIG. 7. The details of each of these respective steps 130, 132, 230, 232 136 of the flowchart 228 of the method of the plating process on the workpiece 138 utilizing the fluid head 200 as shown in FIGS. 6A-6C will be discussed in detail with respect to FIG. 8.

FIG. 8 is a plurality of side views of the method for performing the plating process as in the flowchart 228 of FIG. 7 on the workpiece 138 utilizing the workpiece case 100 and the fluid head as shown in FIGS. 6A-6C. For the sake of simplicity and brevity of the present disclosure, the details of the first, second, third and fifth steps 128, 130, 132, 136, respectively, are not reproduced herein with respect to the flowchart 228 as the details of the first, second, third, and fifth steps 128, 130, 132, 136 were already described in detail earlier herein with respect to FIGS. 2 and 3 of the present disclosure.

In the flowchart 228, after the third step 132 in which the conductive layer 156 has been formed on the first surface 158 of the workpiece 138, in the sixth step 230 the liquid fluid 217, which is a cleaning fluid, previously present in the liquid fluid source 218 is ejected from the outlet 212 of the fluid head 200. The liquid fluid 217, which is in the liquid state, may be water (e.g., H₂O, distilled H₂O, etc.). For example, to eject the liquid fluid 217 from the outlet 212 of the fluid head 200, a control signal may be sent from the controller 226 to the three-way valve 216 moving the three-way valve 216 from the fully closed position to the first opened position. Once the three-way valve 216 is in the first opened position, the liquid fluid 217 from the liquid fluid source 218 passes along the first fluid pathway 220 and through the three-way valve 216 to fluid head 200 to be ejected from the outlet 212 of the fluid head 200.

In some embodiments of the sixth step 230, while the liquid fluid 217 is being ejected from the outlet 212 of the liquid fluid head 200, the controller may send a control signal to the actuator 202. The control signal sent to the actuator 202 causes the actuator 202 to move the fluid head in at least one of or in a combination of the rotational and translation directions represented by the arrows 204, 206, respectively, and the axes 208, 210, respectively. For example, as the liquid fluid 217 is ejected from the outlet 212 of the fluid head 200, the actuator 202 may move the fluid head 200 at the same time as the workpiece case 100 is rotating or is stationary to further facilitate the cleaning of the workpiece 138, the conductive layer 156, and the workpiece case 100. In other words, the actuator 202 may move and actuate the fluid head to optimize the cleaning of the workpiece 138, the conductive layer 156, and the workpiece case 100 such that the cleaning time is reduced. For example, a dirtier region on the workpiece case 100 may be cleaned more quickly as the fluid head 200 may be more closely directed to that dirtier region than a clean region that has already been fully cleaned by the liquid fluid 217 being ejected from the outlet 212 of the fluid head 200.

In view of the above discussion, the cleaning time to clean the workpiece 138, the conductive layer 156, and the workpiece case 100 with the liquid fluid 217 being ejected from the outlet 212 of the fluid head 200 while the fluid head 200 is being controlled by the actuator 202 and the controller 226 is less than the cleaning time utilizing the fluid hose 102 that is maintained in the fixed and stationary position as discussed earlier herein. In other words, the rotation and translation movement of the fluid head 200 by the actuator 202 and the controller allows for dirtier regions on the workpiece 138, the conductive layer 156, and the workpiece case 100 to be focused on such that the cleaning time is reduced when utilizing the fluid head 200 instead of the fluid hose 102.

After the sixth step 230 in which the liquid fluid 217 is ejected through the outlet 212 of the fluid head 200 and the rotational and translational movement is controlled by the actuator 202 and the controller 226, in a seventh step 232 the gaseous fluid 219 from the gaseous fluid source 222 is ejected from the outlet 212 of the fluid head 200 to dry the workpiece 138, the conductive layer 156, and the workpiece case 100. Similar to the controller 226 controlling the actuator 202 to rotate and translate the fluid head 200 as the fluid head ejects the liquid fluid 217 to decrease the cleaning time, the controller 226 sends a control signal to the actuator 202 while the fluid head ejects the gaseous fluid 219. The actuator 202 may move and actuate the fluid head to optimize the drying of the workpiece 138, the conductive layer 156, and the workpiece case 100 such that the drying time is reduced. For example, a wetter region on the workpiece case 100 may be dried more quickly as the fluid head 200 may be more closely directed to that wetter region than a drier region that has already been fully dried by the gaseous fluid 219 being ejected from the outlet 212 of the fluid head 200.

To eject the gaseous fluid 219 from the outlet 212 of the fluid head 200, the controller sends a control signal to the three-way valve 216 to move the three-way valve from the first opened position to the second opened position such that the liquid fluid 217 is no longer ejected from the outlet 212 of the fluid head 200, and, instead, the gaseous fluid 219 is ejected from the outlet 212 of the fluid head 200. Once the three-way valve 216 is in the second opened position, the gaseous fluid 219 passes from the gaseous fluid source 222 through the second fluid pathway and to the fluid head 200 through the three-way valve 216.

During the seventh step 232, the controller 226 sends a control signal to the static eliminator 214 to activate the static eliminator 214. In some embodiments, the static eliminator 214 may be activated slightly before the gaseous fluid 219 is ejected from the outlet 212 of the fluid head 200, may be activated simultaneously with when the gaseous fluid 219 is ejected from the outlet 212 of the fluid head 200, or may be activated slightly after the sixth step 230 in which the workpiece 138, the conductive layer 156, and the workpiece case 100 are rinsed or washed by the liquid fluid 217.

Once the static eliminator 214 is activated, the static eliminator 214 deionizes the gaseous fluid 219 to eliminate charge on the workpiece 156, to eliminate charge on the workpiece case 100, to eliminate charge on the conductive layer 156, to eliminate charge within the gaseous fluid 219, or to eliminate charge from these various respective features in some similar or different combination. Eliminating the charge on the workpiece case 100, on the workpiece 138, on the conductive layer 156, and within the gaseous fluid 219 prevents or reduces the likelihood of contaminant or debris particles (e.g., left over from the plating process performed in the first, second, and third steps 128, 130, 132, respectively) remaining on respective surfaces of the workpiece 138, the conductive layer 156, and the workpiece case 100 due to static charge when ejecting the gaseous fluid 219 from the outlet 212 of the fluid head 200. For example, while the gaseous fluid 219 may dry any of the liquid fluid 217 that remains on respective surfaces of the workpiece case 100, the workpiece 138, and the conductive layer 156, the gaseous fluid 219 may also blow away or remove contaminant or debris particles that are not statically attracted to these respective surfaces due to the activation of the static eliminator 214 to stop, prevent, or reduce any static charges that may exist.

The static eliminator 214 may prevent or reduce the likelihood of a static discharge event that may damage or generate defects in the conductive layer 156 or the workpiece 138 such that an out-of-tolerance semiconductor device (e.g., semiconductor die, semiconductor package, etc.) is manufactured. By preventing or reducing the likelihood of contaminant particles or debris remaining attracted to the workpiece 138, the conductive layer 156, and the workpiece case 100 due to static charge prevents or reduces the likelihood of defects being generated as the workpiece 138 or the conductive layer 156 are further refined or processed within the FAB to manufacture semiconductor devices (e.g., semiconductor dice, semiconductor packages, etc.).

After the seventh step 232 in which the fluid head 200 ejects the gaseous fluid 219 to decrease drying time of the workpiece 138, the conductive layer 156, and the workpiece case 100, in the fifth step 136 the workpiece 138 and the conductive layer 156, which has been formed on the first surface 158 of the workpiece 138, is removed from the workpiece case 100. For the sake of simplicity and brevity of the present disclosure, as the details of the fifth step 136 were described in detail earlier herein with respect to FIGS. 2 and 3 of the present disclosure, the details of the fifth step 136 are not reproduced herein.

In view of the above discussion, the method in the flowchart 228 cleans and dries the workpiece case 100, the workpiece 138, and the conductive layer 156 more quickly and effectively than the method in the flowchart 126. For example, the fluid head 200 being rotatable and movable while being configured to eject the liquid fluid 217 to wash or rinse the workpiece case 100, the workpiece 138, and the conductive layer 156 and eject the gaseous fluid to dry the workpiece case 100, the workpiece 138, and the conductive layer 156, allows for the fluid head 200 to clean and dry the workpiece case 100, the workpiece 138, and the conductive layer 156 more quickly and effectively than the fixed and stationary fluid hose 102, which is only configured to eject the fluid 146, which is in the liquid state. For example, the static eliminator 214 being present and being activated to prevent or reduce the likelihood of static charge prevents or reduces the likelihood of contaminant or debris particles being attracted to or stuck on respective surfaces of the workpiece case 100, the workpiece 138, and the conductive layer 156 allowing the gaseous fluid 219 ejected from the outlet 212 of the fluid head 200 to blow away those remaining contaminant or debris particles, which are no longer statically attracted to these respective surfaces of the workpiece case 100, the workpiece 138, and the conductive layer 156. In other words, utilizing the fluid head 200, which is movable, rotatable, and configured to eject both the liquid fluid 217 and the gaseous fluid 219, instead of the fluid hose 102, which is fixed stationarily and configured to only eject the fluid 146 that is in the liquid state, decreases the time to clean and dry the workpiece case 100, the workpiece 138, and the conductive layer 156 increasing the UPH of the FAB.

FIG. 9 is a flowchart 300 of a method of performing a refining process on the workpiece 138 with the conductive layer 156 present on the workpiece 138 utilizing the fluid head 200 as shown in FIGS. 6A-6C instead of the fluid hose 102. Similar to the flowchart 148 that includes the first step 150, the second step 152, and the fourth step 155, the flowchart 300 includes the first step 150, the second step 152, the fourth step 155, a fifth step 302, and a sixth step 304. The fifth and sixth steps 302, 304 occur between the second step 152 and the fourth step 155. The fifth step 302 occurs before the sixth step 304 as shown in FIG. 9. The details of each respective step 150, 152, 154, 302, 304, 155 of the flowchart 300 of the method of performing the refining process on the workpiece 138 utilizing the fluid head 200 as shown in FIGS. 6A-6C will be discussed in detail with respect to FIGS. 10A-10D.

FIGS. 10A-10D are side views of the method for performing the refining process as in the flowchart 300 of FIG. 9. The workpiece 138 on which the conductive layer 156 is formed by performing the method in the flowchart 228 is discussed earlier herein. The conductive layer 156 is present on the first surface 158, which may be the first surface 158 of the workpiece 138 as discussed earlier herein. The workpiece 138 further includes the second surface 160 of the workpiece 138 that is opposite to the first surface 158, and the second surface may be the second surface of the workpiece 138 as discussed earlier herein.

As shown in FIG. 10A, the first step 150 is performed on the conductive layer 156 and the workpiece 138. For the sake of simplicity and brevity of the present disclosure, as the details of the first step 150 were discussed earlier herein with respect to FIGS. 2 and 5A, the details of the first step 150 are not reproduced herein.

As shown in FIG. 10B, the second step 152 is performed on the conductive layer 156 and the workpiece 138. For the sake of simplicity and brevity of the present disclosure, as the details of the second step 152 were discussed earlier herein with respect to FIGS. 2 and 5B, the details of the second step 152 are not reproduced herein.

After the second step 152 in which the rotation as represented by the arrows 170 continues after exposing the peripheral region or edge 162 to the acidic fluid 164, in the fifth step 302 as shown in FIG. 10C the liquid fluid 217, which may be referred to as a cleaning fluid, is ejected from the outlet 212 of the fluid head 200. Before exposing the conductive layer 156 and the workpiece 138 to the liquid fluid 217, the fluid head 200 may be repositioned by the actuator 202 such that the outlet 212 of the fluid head 200 is directed towards the conductive layer 156 and the workpiece 138 at which point the ejection of the liquid fluid 217 form the outlet 212 of the fluid head is initiated. As the liquid fluid 217 is ejected from the outlet 212 of the fluid head 200, the actuator 202 may move and rotate the fluid head 200 to optimize the cleaning, rinsing, and washing of the conductive layer 156 and the workpiece 138 to remove any excess of the acidic fluid 164. The translation and rotatable degrees-of-freedom of the fluid head 200 allows for the cleaning time to be faster utilizing the fluid head 200 instead of utilizing the cleaning fluid hose, which may be stationarily and fixedly positioned similar to the fluid hose 102 as discussed earlier herein. In other words, the translation and rotatable degrees-of-freedom of the fluid head 200 allows for the liquid fluid 217 to be directed to areas where a greater amount of excess of the acidic fluid 164 may be present such that the cleaning time can be decreased utilizing the fluid head 200 instead of the cleaning fluid hose 176.

As shown in FIG. 10C, the workpiece 138 and the conductive layer 156 may continue to rotate as represented by the arrows 170. This is the same or similar to when cleaning, rising, or washing the workpiece 138 and the conductive layer 156 as in the third step 154 as discussed earlier herein with respect to the flowchart 148.

After the fifth step 302 in which the liquid fluid 217 is ejected from the outlet 212 of the fluid head 200 to clean, rinse, or wash the conductive layer 156 and the workpiece 138 after being exposed to the acidic fluid 164, in the sixth step 304 as shown in FIG. 10D the gaseous fluid 219 is ejected from the outlet 212 of the fluid head 200. The gaseous fluid 219 ejected by the outlet 212 of the fluid head 200 as shown in FIG. 10D more quickly dries the conductive layer 156 and the workpiece 138 as the gaseous fluid 219 quickens the evaporation or removal of excess of the liquid fluid 217 from the conductive layer 156 and the workpiece 138. In other words, utilizing the fluid head 200 that is configured to eject the liquid fluid 217 and the gaseous fluid 219 instead of the cleaning fluid hose 176 allows for the fluid head 200 to reduce the cleaning and drying time of the workpiece 138 and the conductive layer 156. To further reduce the drying time, the actuator 202 may translate and rotate the fluid head 200 along the workpiece 138 and the conductive layer 156 to further facilitate the evaporation and the removal of excess of the liquid fluid left over from the fifth step 302 during the drying of the workpiece 138 and the conductive layer 156 in the sixth step 304.

During the sixth step 304, the controller 226 sends a control signal to the static eliminator 214 to activate the static eliminator 214. In some embodiments, the static eliminator 214 may be activated slightly before the gaseous fluid 219 is ejected from the outlet 212 of the fluid head 200, may be activated simultaneously with when the gaseous fluid 219 is ejected from the outlet 212 of the fluid head 200, or may be activated slightly after the sixth step 230 in which the workpiece 138, the conductive layer 156, and the workpiece case 100 are rinsed or washed by the liquid fluid 217.

Once the static eliminator 214 is activated, the static eliminator 214 deionizes the gaseous fluid 219 to eliminate charge on the workpiece 138, to eliminate charge on the conductive layer 156, to eliminate charge within the gaseous fluid 219, or to eliminate charge from these various respective features in some similar or different combination. Eliminating the charge on the workpiece 138, on the conductive layer 156, and within the gaseous fluid 219 prevents or reduces the likelihood of contaminant or debris particles (e.g., left over after the fifth step 302 previously performed) remaining on respective surfaces of the workpiece 138 and the conductive layer 156 due to static charge when ejecting the gaseous fluid 219 from the outlet 212 of the fluid head 200. For example, while the gaseous fluid 219 may dry any of the liquid fluid 217 that remains on respective surfaces of the workpiece 138 and the conductive layer 156, the gaseous fluid 219 may also blow away or remove contaminant or debris particles that are not statically attracted to these respective surfaces due to the activation of the static eliminator 214 to stop, prevent, or reduce any static charges that may exist.

The static eliminator 214 may prevent or reduce the likelihood of a static discharge event that may damage or generate defects in the conductive layer 156 or the workpiece 138 such that an out-of-tolerance semiconductor device (e.g., semiconductor die, semiconductor package, etc.) is manufactured. By preventing or reducing the likelihood of contaminant particles or debris remaining attracted to the workpiece 138 and the conductive layer 156 due to static charge prevents or reduces the likelihood of defects being generated as the workpiece 138 or the conductive layer 156 are further refined or processed within the FAB to manufacture semiconductor devices (e.g., semiconductor dice, semiconductor packages, etc.).

After the sixth step 304 in which the gaseous fluid 219 is ejected from the outlet 212 of the fluid head 200 to dry the workpiece 138 and the conductive layer 156, the fourth step 155 may be carried out by letting the workpiece 138 and the conductive layer 156 continue to rotate to further facilitate drying, or stopping the rotation of the workpiece 138 and the conductive layer 156 allowing them to dry further at rest. In some alternative embodiments, the method as shown in the flowchart 300 may not include the fourth step 155 as the workpiece 138 and the conductive layer 156 may have been previously fully dried by the ejection of the gaseous fluid 219 from the outlet 212 of the fluid head 200.

In view of the above discussion, the method in the flowchart 300 cleans and dries the workpiece 138 and the conductive layer 156 more quickly and effectively than the method in the flowchart 148. For example, the fluid head 200 being rotatable and movable while being configured to eject the liquid fluid 217 to wash or rinse the workpiece 138 and the conductive layer 156 and eject the gaseous fluid 219 to dry the workpiece 138 and the conductive layer 156, allows for the fluid head 200 to clean and dry the workpiece 138 and the conductive layer 156 more quickly and effectively than the fixed and stationary cleaning fluid hose 176, which is only configured to eject the fluid 146, which is in the liquid state. For example, the static eliminator 214 being present and being activated to prevent or reduce the likelihood of static charge prevents or reduces the likelihood of contaminant or debris particles being attracted to or stuck on respective surfaces of the workpiece 138 and the conductive layer 156 allowing the gaseous fluid 219 ejected from the outlet 212 of the fluid head 200 to blow away those remaining contaminant or debris particles, which are no longer statically attracted to these respective surfaces of the workpiece 138 and the conductive layer 156, while drying the workpiece 138 and the conductive layer 156. In other words, utilizing the fluid head 200, which is movable, rotatable, and configured to eject both the liquid fluid 217 and the gaseous fluid 219, instead of the cleaning fluid hose 176, which is fixed stationarily and configured to only eject the fluid 146 that is in the liquid state, decreases the time to clean and dry the workpiece 138 and the conductive layer 156 increasing the UPH of the FAB.

At least one embodiment of a system of the present disclosure may be summarized as including: a workpiece case including a closed position and an opened position; a fluid head including a fluid outlet, the fluid head including: a first mode of operation in which a first fluid is ejected from the fluid outlet of the fluid head; and a second mode of operation in which a second fluid is ejected from the fluid outlet of the fluid head, and wherein the workpiece case is configured to, in operation, hold a workpiece within the workpiece case when in the closed position, and the workpiece case is configured to, in operation, allow the workpiece to be removed from the workpiece case when in the opened position.

At least one embodiment of a method of the present disclosure may be summarized as including: placing a workpiece within a workpiece case; closing the workpiece case to hold the workpiece in a stationary position with respect to the workpiece case; submerging the workpiece within the workpiece case within a bath fluid in a workpiece bath by moving the workpiece case towards the workpiece bath; forming a layer of material on the workpiece when submerged within the workpiece bath; removing the workpiece from the workpiece bath by moving the workpiece case away from the workpiece bath; orienting a fluid head to face towards the workpiece and the workpiece case; rotating the workpiece and the workpiece case and activating the fluid head to eject a first fluid at the workpiece and the workpiece case; after rotating the workpiece and the workpiece case and activating the fluid head to eject the first fluid at the workpiece and the workpiece case, rotating the workpiece and the workpiece case and activating the fluid head to eject a second fluid at the workpiece and the workpiece case different from the first fluid; and after rotating the workpiece and the workpiece case and activating the fluid head to eject the second fluid at the workpiece and the workpiece case, stopping rotation of the workpiece and the workpiece case.

At least one embodiment of a method of the present disclosure may be summarized as including: rotating a workpiece and exposing an acidic fluid through a fluid pathway structure to a peripheral portion of a conductive layer at a first edge of the workpiece and on a surface of the workpiece; rotating the workpiece and exposing a first fluid through a fluid head to a second edge of the conductive layer spaced inward from the first edge of the workpiece; and rotating the workpiece and exposing a second fluid different from the first fluid through the fluid head to the second edge of the conductive layer.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. A system, comprising:

a workpiece case including a closed position and an opened position;

a fluid head including a fluid outlet, the fluid head including: a first mode of operation in which a first fluid is ejected from the fluid outlet of the fluid head; and a second mode of operation in which a second fluid is ejected from the fluid outlet of the fluid head, and

wherein the workpiece case is configured to, in operation, hold a workpiece within the workpiece case when in the closed position, and the workpiece case is configured to, in operation, allow the workpiece to be removed from the workpiece case when in the opened position.

2. The system of claim 1, wherein the fluid head is rotatable and moveable.

3. The system of claim 1, wherein the first fluid is different from the second fluid.

4. The system of claim 3, wherein the first fluid is in a liquid state and the second fluid is in a gaseous state.

5. The system of claim 4, wherein the first fluid is water (H2O) and the second fluid is air.

6. The system of claim 1, wherein the workpiece case is rotatably movable.

7. The system of claim 1, wherein:

when the fluid head is in the first mode of operation, the first fluid is ejected towards the workpiece case to clean the workpiece case; and

when the fluid head is in the second mode of operation, the second fluid is ejected towards the workpiece case to dry the workpiece case.

8. The system of claim 1, wherein the workpiece is a wafer.

9. The system of claim 1, wherein the workpiece case includes a first portion and a second portion that is movable with respect to the first portion, and the second portion is movable between the opened position and the closed position.

10. The system of claim 1, wherein the fluid head further includes a third mode of operation in which a third fluid is ejected from the fluid outlet of the fluid head, the third fluid is different from the first fluid and the second fluid, respectively.

11. The system of claim 1, further comprising a workpiece bath configured to, in operation, receive the workpiece and submerge the workpiece within a bath fluid within the workpiece bath.

12. The system of claim 1, wherein the workpiece case is a clamshell case.

13. The system of claim 1, further comprising a static eliminator configured to prevent contaminant particles and debris from being statically attracted to a workpiece when the fluid head is in the second mode of operation.

14. A method, comprising:

placing a workpiece within a workpiece case;

closing the workpiece case to hold the workpiece in a stationary position with respect to the workpiece case;

submerging the workpiece within the workpiece case within a bath fluid in a workpiece bath by moving the workpiece case towards the workpiece bath;

forming a layer of material on the workpiece when submerged within the workpiece bath;

removing the workpiece from the workpiece bath by moving the workpiece case away from the workpiece bath;

orienting a fluid head to face towards the workpiece and the workpiece case;

rotating the workpiece and the workpiece case and activating the fluid head to eject a first fluid at the workpiece and the workpiece case;

after rotating the workpiece and the workpiece case and activating the fluid head to eject the first fluid at the workpiece and the workpiece case, rotating the workpiece and the workpiece case and activating the fluid head to eject a second fluid at the workpiece and the workpiece case different from the first fluid; and

after rotating the workpiece and the workpiece case and activating the fluid head to eject the second fluid at the workpiece and the workpiece case, stopping rotation of the workpiece and the workpiece case.

15. The method of claim 14, wherein the layer of material is a layer of conductive material plated onto a surface of the workpiece.

16. The method of claim 14, further comprising after stopping rotation of the workpiece and the workpiece case, opening the workpiece case and removing the workpiece from the workpiece case.

17. The method of claim 14, wherein the first fluid in a liquid state and the second fluid is in a gaseous state.

18. A method, comprising:

rotating a workpiece and exposing a peripheral portion of a conductive layer at a first edge of the workpiece and on a surface of the workpiece to an acidic fluid through a fluid pathway structure;

rotating the workpiece and exposing a second edge of the conductive layer spaced inward from the first edge of the workpiece to a first fluid through a fluid head; and

rotating the workpiece and exposing the second edge of the conductive layer to a second fluid different from the first fluid through the fluid head.

19. The method of claim 18, further comprising forming the conductive layer on the surface of the workpiece.

20. The method of claim 19, wherein forming the conductive layer further includes:

placing the workpiece within a workpiece case;

closing the workpiece case to hold the workpiece in a stationary position with respect to the workpiece case;

submerging the workpiece within the workpiece case within a bath fluid in a workpiece bath by moving the workpiece case towards the workpiece bath;

forming a layer of material on the workpiece when submerged within the workpiece bath;

removing the workpiece from the workpiece bath by moving the workpiece case away from the workpiece bath;

orienting the fluid head to face towards the workpiece and the workpiece case;

rotating the workpiece and the workpiece case and activating the fluid head to eject the first fluid at the workpiece and the workpiece case;

after rotating the workpiece and the workpiece case and activating the fluid head to eject the first fluid at the workpiece and the workpiece case, rotating the workpiece and the workpiece case and activating the fluid head to eject a second fluid at the workpiece and the workpiece case;

after rotating the workpiece and the workpiece case and activating the fluid head to eject the second fluid at the workpiece and the workpiece case, stopping rotation of the workpiece and the workpiece case; and

after stopping rotation of the workpiece and the workpiece case, opening the workpiece case and removing the workpiece from the workpiece case.