Abstract: Disclosed is a process for production of an asymmetric binuclear metal complex represented by the general formula: (L1)2M1(BL)M2(L2)2(X)n wherein M1 and M2, which may be the same as or different from each other, represent a transition metal; L1 and L2, which are different from each other, represent a chelate ligand capable of multidentate coordination and two L1s may be different from each other and two L2s may be different from each other; BL represents a bridging ligand having at least two cyclic structures each containing a hetero atom, the hetero atoms contained in the cyclic structures being ligand atoms coordinating to M1 and M2; X represents a counter ion; and n is the number of counter ions needed to neutralize the charge of the complex. In the process, the binuclear metal complex is isolated by adjusting the pH of the solution containing the binuclear metal complex to a value higher than 2.5.

Abstract: The present invention relates to a method of protecting organic material, especially from the pharmaceuticals and foodstuffs sectors, against light, wherein at least one pigment of formula (1), (2), (3), (4), (5), (6) and (7) and (8) as defined in claim 1 and optionally a UV absorber as well as optionally further pigments and/or colorants is applied to or incorporatedin a carrier material and the carrier material so treatedis positioned between the light source and the organic material to be protected.

Abstract: A tension ring lifting assembly (101) for securing around a pipe, the assembly comprising a tension ring (112) and at least one lifting lug (130) by which the tension ring, and a pipe around which the tension ring has been secured, can be lifted. The tension ring comprises: a plurality of collar segments (114, 116) which can be assembled into a ring around the pipe; a plurality of slip segments (140) adapted to fit between the collar segments and the pipe and to make direct contact with the pipe surface, the collar segments and the slip segments when assembled having inclined contacting surfaces such that an inner diameter across said assembled ring, between the inner faces of the collar segments, varies as the segments move up and down in the collar; means for tensioning (152, 154, 156) adjacent collar segments (114, 116) against one another to secure said ring around the pipe; and means for removeably mounting (7, 9) said at least one lifting lug (130) to the tension ring (140).

Abstract: A chain sprocket for link chains, for example, round link chains or profiled steel chains, has chain pockets for horizontal chain links. Chain pockets for vertical chain links are also provided. The chain pockets for the vertical chain links are separated from one another by teeth. The tooth flank surface of the tooth that a vertical chain link contacts under the effect of a load is dimensioned and profiled in a special manner. The dimensioning is such that up to a defined chain load the vertical chain link does not contact the tooth flank with its nose. A contact between the tooth flank surface and the nose of the respective chain link occurs only above a defined chain load.

Abstract: An output shaft to which the rotational force of a motor is transferred is housed in a case. One end side of the output shaft protrudes from a side surface of the case. A pinion gear is fixed to one end side of the output shaft. Teeth that mesh with the pinion gear are formed on the outer circumferential surface of cables. Cable guide surfaces for guiding the cables to mesh with the pinion gear are provided on the side surface of the case.

Abstract: Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device.

Abstract: In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided.

Abstract: Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas includes a hydrocarbon compound and a carrier gas, and generating a plasma of the processing gas to deposit a layer of the carbon-based switchable material on a substrate within the processing chamber. Numerous additional aspects are provided.

Abstract: A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.

Abstract: A phase-change memory cell is proposed. The phase-change memory includes a bottom electrode; a phase-change spacer formed to contact the bottom electrode; an electrical conductive layer having a vertical portion and a horizontal portion, wherein the electrical conductive layer electrically connects to the phase-change spacer via the horizontal portion; and a top electrode electrically connected to the electrical conductive layer via the vertical portion of the electrically conductive layer.

Abstract: A recording material for a phase change solid memory may include a uniform-mixed phase that includes: at least one of a Te-containing alkali metal iodide phase and a Te-containing silver iodide phase, and an Sb—Te alloy phase. The recording material shows at least one of a phase change and a phase separation which changes at least one of optical property and electrical property of the recording material.

Abstract: A phase change memory may include self-aligned polysilicon vertical bipolar junction transistors used as select devices. The bipolar junction transistors may be formed with double shallow trench isolation. For example, the emitters of each bipolar transistor may be defined by a first set of parallel trenches in one direction and a second set of parallel trenches in the opposite direction. In some embodiments, the formation of parasitic PNP transistors between adjacent emitters may be avoided.

Abstract: The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination. Quantum dots adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region. By using the nanowire core as template for formation of the quantum dots and the shell layer, quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption.

Abstract: A light emitting diode which includes a laminate including an n-type cladding layer, an emission layer which has a quantum well structure having a well layer and a barrier layer, an intermediate layer and a p-type cladding layer in this order, wherein the composition of each of the layers is represented by the composition formula: (AlXGa1-X) YIn1-YP (0?X?1, 0<Y?1), and the composition of the barrier layer is represented by the composition formula: (AlXGa1-X) YIn1-YP (0.5?X?1, 0<Y?1).

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like.

Abstract: The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.

Abstract: An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.

Abstract: The present invention, in one embodiment, provides a semiconductor device including a substrate having an dielectric layer; at least one graphene layer overlying the dielectric layer; a back gate structure underlying the at least one graphene layer; and a semiconductor-containing layer present on the at least one graphene layer, the semiconductor-containing layer including a source region and a drain region separated by an upper gate structure, wherein the upper gate structure is positioned overlying the back gate structure.

Abstract: An organic nanofiber including a gelled organic semiconductor compound. Also disclosed is an organic semiconductor transistor and a method of manufacturing an organic semiconductor transistor.

Abstract: A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode.

Abstract: Dielectric layer pinholes in OFET structures are addressed through the addition of a high-K dielectric layer to eliminate the effects of shorts in the dielectric layer. The original dielectric layer is maintained such that the semiconductor/dielectric interface remains unchanged. The high-K dielectric layer contributes material to the gate dielectric to plug up pinholes in the original dielectric, but does not contribute significant capacitance due to the high dielectric constant of the additional dielectric layer. The incidence of pinholes in the dielectric layer is reduced without significantly affecting the performance of the OFET transistor.

Abstract: An electroluminescent device comprises, in order: an opaque semiconducting substrate (1) including active circuitry (2); an anode (3); a layer of oxide material (4); a hole transport layer (5); a layer of light-emitting polymer (6); a transparent cathode (7); and an encapsulation (8). The oxide material (4) may in particular comprise a transition metal oxide. A method of forming the device is also disclosed.

Abstract: The invention provides an organic electroluminescence element which comprises a hole transporting layer which comprises a tris(p-terphenyl-4-yl)amine represented by the general formula (I) wherein R1, R2 and R3 are each independently a hydrogen atom, an alkyl group, a cycloalkyl group which may have substituents or an aryl group which may have substituents as a hole transporting agent, and a hole injecting layer which comprises a hole injecting agent comprising an aromatic tertiary amine having an ionization potential in the range of 5.2-5.6 eV. This organic electroluminescence element can be driven at a low voltage with high efficiency and at high luminance.

Abstract: A diode includes an organic composite plate, a pressing element, a first electrode, and a second electrode. The organic composite plate has a plurality of carbon nanotubes uniformly distributed therein and includes a first portion and a second portion opposite to the first portion. The pressing element is disposed on the first portion of the organic composite plate. The first and second electrodes are electrically connected to the first and second portions of the organic composite plate, respectively. The diode employed with the carbon nanotubes has a changeable characteristic, such as voltage, current, via controlling the pressure applied by the pressing element.

Abstract: An organic semiconductor compound based on a 2,7-bis-(vinyl)[1]benzothieno[3,2-b]benzothiophene backbone, an organic semiconductor thin film, an organic thin film transistor and methods of forming the same are provided, the organic semiconductor compound including a vinyl group derived from a phosphonate derivative represented by Formula 1 and an aldehyde derivative represented by Formula 2 below:

Abstract: The present invention is directed to a full color organic electroluminescent device which comprises a substrate; a first electrode formed on the substrate; an organic emitting layer formed on the first electrode, and having a red-emitting layer, a green-emitting layer and a blue-emitting layer, respectively patterned in a red pixel region, a green pixel region and a blue pixel region, and having the red and green-emitting layer consisting of a phosphorescent material and the blue-emitting layer consisting of a fluorescent material; a hole blocking layer formed on the organic emitting layer as a common layer; and a second electrode formed on the hole blocking layer, so that the full color organic electroluminescent device having enhanced lifetime and luminous efficiency characteristics can be provided.

Abstract: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.

Abstract: A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern.

Abstract: It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.

Abstract: Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

Abstract: By feeding inspection signals independent from each other to upper first and second gate lead inspection lines (52b, 52c), respectively, while maintaining the upper gate-side switching elements (40c) in an ON state, any short circuit between adjacent gate lines (40) of upper gate lines (40) and the like can be detected. By feeding inspection signals independent from each other to lower first and second gate lead inspection lines (53b, 53c), respectively, while maintaining lower gate-side switching elements (40c?) in an ON state, any short circuit between adjacent gate lines (40) of lower gate lines (40) and the like can be detected. By feeding inspection signals independent from each other to source lead inspection lines (55) while maintaining source-side switching elements (41) in an ON state, any short circuit between adjacent ones of source lines (41) and the like can be detected.

Abstract: In a method of manufacturing a TFT substrate in accordance with an exemplary aspect of the present invention, an intrinsic semiconductor film, an impurity semiconductor film, and a conductive film for source lines are formed in succession, and a resist having a thin-film portion and a thick-film portions is formed on the conductive film for source lines. Then, etching is performed by using the resist as a mask, and after that, a part of the conductive film for source lines is exposed by removing the thin-film portion of the resist. Next, the exposed conductive film for source lines is etched by using the thick-film portions of the resist a mask, so that the impurity semiconductor film is exposed. Then, by etching the exposed impurity semiconductor film, a back channel region of a TFT 108 is formed. Further, a dummy back channel region 18a, which is irrelevant to the operation of the finished product, is also formed in a portion other than the TFT 108 region.

Abstract: The invention relates to a method for producing a MEMS/NEMS structure from a substrate made in a monocrystalline semiconductor material, the structure comprising a flexible mechanical element connected to the substrate by at least one anchoring zone, the method comprising the following steps: the formation of a protection layer on one face of the substrate, the protection layer being made in a monocrystalline material different from the material of the substrate, etching of the protection layer and the substrate in order to produce at least one cavity, the etching being done so as to leave an overhang made in the material of the protection layer on the edges of the cavity, filling in of the cavity with an electrically insulating material in order to obtain an insulating anchoring portion, epitaxy of a semiconductor material from the protection layer and the electrically insulating material in order to obtain a layer designed to produce the flexible mechanical element, liberation of the flexible mechanical

Abstract: Structures are presented including a high-k and metal gate transistor and a resistor where the resistor includes a dielectric layer between a metal and a polysilicon. The resistor provides typical polysilicon resistor performance with less cost and higher throughput.

Abstract: An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.

Abstract: A polysilsesquioxane copolymer, a polysilsesquioxane copolymer including the same, an organic light emitting diode display including the same, and associated methods, the polysilsesquioxane copolymer including a copolymer including repeating units derived from a first monomer selected from the group consisting of alkoxyphenyltrialkoxysilane, alkoxyphenylalkyltrialkoxysilane, alkoxycarbonylphenyltrialkoxysilane, and alkoxycarbonylphenylalkyltrialkoxysilane, and repeating units derived from a second monomer including an ?,?-bis(trialkoxysilyl) compound monomer.

Abstract: A thin-film transistor (“TFT”) array and a method of fabricating the TFT array panel include: an insulating substrate; a gate line and a data line which are insulated from each other on the insulating substrate and are arranged in a lattice; common wiring extended parallel to the gate line on the insulating substrate; a gate insulating film disposed on the gate line and the common wiring; a semiconductor layer disposed on the gate insulating film; contact holes which penetrate through the gate insulating film and the semiconductor layer disposed on the common wiring; a plurality of common electrodes connected to the common wiring by the contact holes and arranged parallel to each other; and a plurality of pixel electrodes arranged parallel to the plurality of common electrodes.

Abstract: A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; and a white-emissive light-emitting element formed over and being in contact with the thin film transistor.

Abstract: The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.

Abstract: A semiconductor device and the method for fabricating the same are disclosed. The fabrication method includes forming a PMOS device and an NMOS device on a substrate, wherein the PMOS device includes a first poly-silicon island, a gate dielectric layer covering the first poly-silicon island, and a first gate on the gate dielectric layer. The method of fabrication the PMOS device includes performing a P-type ion implantation process on the first poly-silicon island to form a plurality of P-type heavily doped regions and a plurality of P-type lightly doped regions. The length of the channel region is substantially less than 3 micron, and the length of at least one of the P-type lightly doped regions substantially is 10%-80% of the length of the channel region. The P-type lightly doped regions are used to improve the short channel effect of the PMOS device.

Abstract: To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.

Abstract: A thin film transistor includes a layer structure having a gate electrode, a gate insulation layer and a channel layer. A source line may contact the channel layer, and may extend along a direction crossing over the gate electrode. The source line may partially overlap the gate electrode so that both sides of the source line overlapping the gate electrode may be entirely positioned between both sides of the gate electrode. A drain line may make contact with the channel layer and may be spaced apart from the source line by a channel length. The drain line may have a structure symmetrical to that of the source line. Overlap areas among the gate electrode, the source line and the drain line may be reduced, so that the thin film transistor may ensure a high cut-off frequency.

Abstract: This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration.

Abstract: A thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; a gate electrode disposed on the insulating layer over the channel region; an passivation layer disposed on the gate electrode and the gate insulating layer; a source electrode disposed in contact with upper, lower and side surfaces of the source region via a first contact hole through passivation layer, the gate insulating layer and the semiconductor layer; and a drain electrode disposed in contact with upper, lower and side surfaces of the drain region via a second contact hole through the passivation layer, the gate insulating layer and the semiconductor layer.

Abstract: A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; and a gate electrode disposed on the insulating layer over the channel region, wherein the semiconductor layer includes tapered edge portions with a taper angle defined between the tapered edge portions and a surface of the substrate is less than about 30 degrees.

Abstract: An electronic device includes: a substrate; and a plurality of thin film transistors disposed in lines at least in one direction in terms of planar view when viewed from one principal surface of the substrate; each of the plurality of thin film transistors including a preliminary heating layer on the substrate, an insulating layer on the preliminary heating layer, and a thin film semiconductor layer a part of which overlaps the preliminary heating layer through the insulating film, wherein a portion of the preliminary heating layer other than the portion overlapping the thin film semiconductor layer has a planar shape which is line-symmetrical with respect to an axis extending in a direction perpendicularly intersecting the one direction.

Abstract: In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps.