Patents Issued in April 9, 2013
  • Patent number: 8415610
    Abstract: Present invention provides an optical encoder capable of improving the precision of an interpolation angle in a single signal track, in an encoder of sine-wave angle interpolation type. The optical encoder includes a waveform, in which a phase-modulated wave is superimposed in a predetermined period over a sine-wave of a fundamental period, as a signal track (103), and an optical detector (104) for extracting the sine signal and the cosine signal of the phase-modulated wave. An operation unit (106) operates electric angles individually from the output signals of a first optical detector pair and a second optical detector pair belonging to the optical detector, and determines the sum and difference of the electric angles, thereby acquiring the electric angle and the phase-modulated wave of the fundamental period.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: April 9, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hajime Nakajima, Takuya Noguchi, Takeshi Musha, Youichi Omura, Toshiro Nakashima, Tatsuya Nagatani, Takashi Iwamoto
  • Patent number: 8415611
    Abstract: A sensor chip includes: a substrate that has a planar portion; and a diffraction grating on the planar portion and having a metal surface, the diffraction grating having a target substance thereon and including: a plurality of first protrusions periodically arranged in a period equal to or greater than 100 nm and equal to or less than 1000 nm in a first direction parallel to the planar portion, a plurality of base portions located between two adjacent first protrusions and configures a base of the substrate, a plurality of second protrusions formed on upper faces of the plurality of first protrusions, and a plurality of third protrusions formed on the plurality of base portions.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: April 9, 2013
    Assignee: Seiko Epson Corporation
    Inventors: Jun Amako, Koehi Yamada
  • Patent number: 8415612
    Abstract: A cold-atom system has multiple vacuum chambers. One vacuum chamber includes an atom source. A fluidic connection is provided between that vacuum chamber and another vacuum chamber. The fluidic connection includes a microchannel formed as a groove in a substantially flat surface and covered by a layer of material.
    Type: Grant
    Filed: May 19, 2008
    Date of Patent: April 9, 2013
    Assignees: The Regents of the University of Colorado, Sarnoff Corporation
    Inventors: Sterling Eduardo McBride, Steven Alan Lipp, Joey John Michalchuk, Dana Z. Anderson, Evan Salim, Matthew Squires
  • Patent number: 8415613
    Abstract: The present invention relates to a method for investigating a sample using scanning probe photon microscopy or optical force microscopy, and to an apparatus which is designed accordingly. The method or the apparatus provides for two optical traps which can be moved in a local region of the sample, wherein in at least one of the two traps a probe is held. The sample is scanned using the two traps and the measured data from the two traps are captured separately and evaluated by correlation. In particular interference signals resulting from an interaction between sample and light trap can be eliminated by the method.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: April 9, 2013
    Assignee: JPK Instruments AG
    Inventors: Sven-Peter Heyn, Jacob Kerssemakers, Detlef Knebel, Helge Eggert, Torsten Jaehnke, Joern Kamps
  • Patent number: 8415614
    Abstract: An ion mobility spectrometer has two drift chambers and a common, doped reaction region. Each drift chamber includes an ion modifier, such as one that fragments the doped ions by a high electrical field. One of the drift chambers is doped and the other is undoped. In this way, the dopant adducts are removed by the modification process but then recombine with dopant only in the doped chamber so that different outputs are produced by the two drift chambers.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: April 9, 2013
    Assignee: Smiths Detection—Watford Limited
    Inventors: Jonathan Richard Atkinson, Alastair Clark, Stephen John Taylor
  • Patent number: 8415615
    Abstract: Provided is a method that achieves both of soft ionization and high ionization efficiency of a substance to be analyzed at each measurement site without impairing a two-dimensional distribution state of the substance to be analyzed in desorption ionization mass spectrometry of a substance to be measured. By applying, to a substance to be analyzed, an ionization assisting reagent including an organic acid including a functional group represented by —(CF2)COOH and having a boiling point of 150° C. or more, and a polyhydric alcohol having a melting point of 20° C. or less and a boiling point of 150° C. or more at normal pressure, the organic acid, which is a component of the ionization assisting reagent, effectively donates a proton to the substance to be analyzed, thereby improving ionization efficiency, and the polyhydric alcohol, which is a component of the ionization assisting reagent, inhibits fragmentation.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: April 9, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shuya Satoh, Hiroyuki Hashimoto
  • Patent number: 8415616
    Abstract: Methods are provided for detecting the amount of one or more CAH panel analytes (i.e., pregnenolone, 17-OH pregnenolone, progesterone, 17-OH progesterone, dehydroepiandrosterone (DHEA), androstenedione, testosterone, deoxycorticosterone, 11-deoxycortisol, and cortisol) in a sample by mass spectrometry. The methods generally involve ionizing one or more CAH panel analytes in a sample and quantifying the generated ions to determine the amount of one or more CAH panel analytes in the sample. In methods where amounts of multiple CAH panel analytes are detected, the amounts of multiple analytes are detected in the same sample injection.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: April 9, 2013
    Assignee: Quest Diagnostics Investments Incorporated
    Inventors: Amit Ghoshal, Nigel J. Clarke, Mildred M. Goldman
  • Patent number: 8415617
    Abstract: A two-dimensional radial-ejection ion trap is constructed from four apertured electrodes having inwardly facing hyperbolic surfaces, with each electrode being spaced from the centerline by a distance r that is greater than the hyperbolic radius r0 defined by the hyperbolic surfaces. This geometry produces a balanced symmetrical trapping field that has a negligible octopole field component and a relatively large dodecapole or icosapolar field component. In one specific implementation, the ion trap is selectably operable as a quadrupole mass filter by applying a filtering DC voltage to the electrodes.
    Type: Grant
    Filed: April 13, 2011
    Date of Patent: April 9, 2013
    Assignee: Thermo Finnigan LLC
    Inventor: Jae C. Schwartz
  • Patent number: 8415618
    Abstract: An ion mobility spectrometer is disclosed wherein the potential difference between the exit region of an ion trap arranged upstream of the ion mobility spectrometer and the entrance region to the ion mobility spectrometer is varied temporally with time in order to optimise the transmission of ions from the ion trap into the ion mobility spectrometer so as to avoid fragmentation of the ions.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: April 9, 2013
    Assignee: Micromass UK Limited
    Inventor: John Brian Hoyes
  • Patent number: 8415619
    Abstract: The present invention relates generally to mass spectrometry. The present invention relates more particularly to methods and systems for use in mass spectrometric identification of a variety of analytes, including high molecular weight species such as proteins. One embodiment of the invention is a method for analyzing an analyte. The method includes nebulizing a suspension of the analyte in a solvent with a surface acoustic wave transducer; and performing mass spectrometry on the nebulized suspension. The surface acoustic wave transducer can be used, for example, to transfer non-volatile peptides and proteins (as well as other analyztes, such as oligonucleotides and polymers) to the gas phase at atmospheric pressure. Nebulization using surface acoustic waves can be conducted in a discontinuous or pulsed mode, similar to that used in MALDI, or in a continuous mode, as in ESI.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: April 9, 2013
    Assignee: University of Glascgow
    Inventors: David R. Goodlett, Scott R. Heron, Jonathan Cooper
  • Patent number: 8415620
    Abstract: Systems and methods for determining doping type and level in semiconducting nanostructures include generating light from a laser source, directing the light on the device via an extended microscope, collecting electrons emitted from the device in an electron analyzer and calculating the doping type and level of the device.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: April 9, 2013
    Assignee: International Business Machines Corporation
    Inventor: Richard A. Haight
  • Patent number: 8415621
    Abstract: A method for line width measurement, comprising: providing a substrate, wherein a raised line pattern is formed on a surface of the substrate, and the line pattern has a width; forming a first measurement structure and a second measurement structure on opposite sidewalls of the line pattern in the width direction of the line pattern; removing the line pattern; and measuring the spacing between the first measurement structure and the second measurement structure, and obtaining the width of the line pattern by subtracting a predetermined offset from the spacing. The present invention facilitates to reduce the uncertainty associated with the measuring process and to improve the measurement precision.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: April 9, 2013
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Haizhou Yin, Huilong Zhu, Zhijiong Luo
  • Patent number: 8415622
    Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: April 9, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiro Suzuki, Hiroto Honda, Ikuo Fujiwara, Hideyuki Funaki, Hitoshi Yagi, Keita Sasaki, Honam Kwon, Koichi Ishii, Masako Ogata, Risako Ueno
  • Patent number: 8415623
    Abstract: According to certain embodiments, an apparatus comprises a first readout integrated circuit (ROIC), a second ROIC, and a dual band detector array. The first ROIC comprises first unit cells. The second ROIC is disposed outwardly from the first ROIC and comprises a second unit cells. Electrically conductive vias are disposed through the second ROIC and at least into the first ROIC. The detector array is disposed outwardly from the second ROIC. The detector array is configured to detect high dynamic range infrared light and comprises detector pixels. Each detector pixel is configured to generate a current in response to detecting light and send the current to a via. A via is configured to send the signal to a second unit cell and a first unit cell.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: April 9, 2013
    Assignee: Raytheon Company
    Inventor: Roger W. Graham
  • Patent number: 8415624
    Abstract: A method and system for detection and identification of concealed materials, is provided, wherein a dark image and two or more NIR sample images are taken at two or more key wavelengths or bands of wavelengths corresponding to peaks and/or valleys in the NIR spectra of known materials, and differential wavelength imaging processes are used to produce a differential wavelength image based on therein. The differential wavelength image is then analyzed/processed so as to detect any materials concealed on the target of interest, such as a human or piece of baggage, by calculation of pixel intensity values in the image and identification of distinctive pixel values. Then, via various methods, the distinctive pixel values of the detected materials are compared to a data set of known wavelengths related to known materials, such as explosives and other contraband. Correspondence thereof results in an accurate identification of the concealed material(s).
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: April 9, 2013
    Assignee: Polestar Technologies, Inc.
    Inventor: Ranganathan Shashidhar
  • Patent number: 8415625
    Abstract: A total reflection terahertz wave measuring apparatus 1 includes a light source 11, a branching part 12, a chopper 13, an optical path length difference adjusting part 14, a polarizer 15, a beam splitter 17, a terahertz wave generating element 20, a filter 25, an internal total reflection prism 31, a terahertz wave detecting element 40, a ¼ wavelength plate 51, a polarization split element 52, a photodetector 53a, a photodetector 53b, a differential amplifier 54, and a lock-in amplifier 55. The internal total reflection prism 31 is a so-called aplanatic prism, and has an entrance surface 31a, an exit surface 31b, and a reflection surface 31c. The terahertz wave generating element 20 and the filter 25 are provided to be integrated with the entrance surface 31a of the internal total reflection prism 31, and the terahertz wave detecting element 40 is provided to be integrated with the exit surface 31b of the internal total reflection prism 31.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: April 9, 2013
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Atsushi Nakanishi, Yoichi Kawada, Takashi Yasuda, Hironori Takahashi, Masatoshi Fujimoto, Shinichiro Aoshima, Atsuko Aoshima
  • Patent number: 8415626
    Abstract: An NDIR gas sensor is housed within a mechanical housing made up of a header housing, a can mounted to the header housing, and a sample chamber mounted above the can. The can has a top surface with a pair of windows formed in it to allow radiation to enter and return from the sample chamber. An electronics module is mounted on a printed circuit board hermetically sealed within the can. A signal channel path length detected by the signal detector is greater than a reference channel path length detected by the reference detector and an absorption bias between the signal and reference outputs can be used to determine a gas concentration in the sample chamber. Both the signal detector and the reference detector have an identical narrow band pass filter with the same Center Wavelength (“CWL”), Full Width Half Maximum (FWHM) and transmittance efficiency at the CWL.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: April 9, 2013
    Assignee: Airware, Inc.
    Inventor: Jacob Y Wong
  • Patent number: 8415627
    Abstract: Fluorescence detection device employed in a flow site meter emits laser light intensity-modulated by a modulation signal and acquires the fluorescence signal of fluorescence emitted from a measurement object passing through a measurement point of the laser light. The device generates the reference signal, separately from the modulation signal, the reference signal having a frequency different from the frequency of the modulation signal and having a phase synchronized with a phase of the modulation. The device determines fluorescence relaxation time of the measurement object from the fluorescence signal using the reference signal.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: April 9, 2013
    Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
    Inventors: Kyouji Doi, Shigeyuki Nakada, Hironori Hayashi, Kazuteru Hoshishima
  • Patent number: 8415628
    Abstract: A flat panel X-ray detector that comprises an X-ray panel and a scintillator layer disposed on a first surface of the X-ray panel, is disclosed herein. The flat panel X-ray detector further comprises a hermetic cover that covers the scintillator layer. The hermetic cover comprises a top surface and at least one sidewall extending away from the top surface. The flat panel X-ray detector further comprises a solder seal disposed between the hermetic cover and the X-ray panel. A rim of the sidewall is substantially embedded within the solder seal such that the rim does not directly contact the X-ray panel. A method for fabricating a flat panel X-ray detector is also disclosed.
    Type: Grant
    Filed: October 31, 2011
    Date of Patent: April 9, 2013
    Assignee: General Electric Company
    Inventors: Jeffrey Jon Shaw, Craig Patrick Galligan
  • Patent number: 8415629
    Abstract: A radiation-sensitive detector includes a photosensor layer with one or more photosensor dixels and a composite scintillator layer with one or more scintillator dixels optically coupled to the photosensor layer. The composite scintillator layer is formed from a mixture including a scintillator material having a first refractive index corresponding to a first wavelength and a photo-resist used in micro-electromechanical systems production, having a second refractive index corresponding to the first wavelength. The first and second refractive indices are substantially matched, and the composite scintillator layer produces light having the first wavelength and that is indicative of x-radiation detected thereby.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 9, 2013
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Simha Levene, Cornelis R. Ronda
  • Patent number: 8415630
    Abstract: Apparatus and methods for determining a boundary of an object for positron emission tomography (PET) scatter correction are provided. One method includes obtaining positron emission tomography (PET) data and computed tomography (CT) data for an object. The PET data and CT data is acquired from an imaging system. The method further includes determining a PET data boundary of the object based on the PET data and determining a CT data boundary of the object based on the CT data. The method further includes determining a combined boundary for PET scatter correction. The combined boundary encompasses the PET data boundary and the CT data boundary.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: April 9, 2013
    Assignee: General Electric Company
    Inventors: Steven Gerard Ross, Timothy Wayne Deller, Ravindra Mohan Manjeshwar, Scott David Wollenweber, Charles William Stearns
  • Patent number: 8415631
    Abstract: According to one embodiment, a TOF-PET apparatus includes a plurality of detector rings arranged along a central axis thereof. Each of the detector rings comprises a plurality of scintillators and a plurality of photomultipliers. The scintillators are arranged on a substantial circumference around the central axis and generate scintillation in response to pair annihilation gamma-rays from a subject. The photomultipliers generate an electric signal in accordance with the generated scintillation. A length of each of the scintillators along a radial direction of the substantial circumference is set to a range in which a value of a total number of counts/time resolution of coincidence events of pair annihilation gamma-rays is more improved than when a reference scintillator whose probability of interaction with pair annihilation gamma-rays is adjusted to 80% is used under conditions of a constant total volume of the scintillators.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: April 9, 2013
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Medical Systems Corporation
    Inventors: Kenta Moriyasu, Takuzo Takayama
  • Patent number: 8415632
    Abstract: Methods and systems for calibrating a nuclear medicine imaging system are provided. One method includes acquiring spatially determined non-uniform radiation flux information from a calibration scan of a calibration source using a gamma camera having an attached non-parallel-hole collimator. The method further includes determining a measured non-uniform count density profile from the acquired non-uniform radiation flux information. The method also includes creating a gamma camera uniformity correction map derived from (i) the measured non-uniform count density profile and (ii) a modeled or calculated non-uniform count density profile for calibrating the NM imaging system.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: April 9, 2013
    Assignee: General Electric Company
    Inventors: Leonid Tsukerman, Floribertus P. M. Heukensfeldt Jansen, Ira Blevis, Jean-Paul Bouhnik
  • Patent number: 8415633
    Abstract: The method and the device are used to monitor the intensity of an electron beam. In order to detect changes in intensity of the electron beam, electromagnetic radiation directly or indirectly emitted by the electron beam is detected and evaluated. This particularly refers to the evaluation of ultraviolet radiation and/or radiation in the range of visible light.
    Type: Grant
    Filed: April 20, 2010
    Date of Patent: April 9, 2013
    Assignee: KHS GmbH
    Inventors: Gernot Keil, Alois Monzel
  • Patent number: 8415634
    Abstract: An apparatus and method for detecting radiation are provided. The apparatus includes an upper electrode layer transmitting radiation; a first photoconductive layer becoming photoconductive upon exposure to the radiation and thus generating charges therein; a charge trapping layer trapping therein the charges generated in the first photoconductive layer; a second photoconductive layer becoming photoconductive upon exposure to rear light for reading out a radiation image; a lower transparent electrode layer charged with the charges trapped in the charge trapping layer; a micro lens layer disposed between the lower transparent electrode layer and a rear light emission unit and including a plurality of micro lenses respectively corresponding to a plurality of pixels; and the rear light emission unit applying the rear light to the second photoconductive layer via the micro lens layer and the lower transparent electrode layer in units of the pixels.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: April 9, 2013
    Assignee: Drtech Corporation
    Inventors: Jung-Seok Kim, Byung-Hun Ko, Beom-Jin Moon, Jung-Kee Yoon
  • Patent number: 8415635
    Abstract: A particle-counting apparatus is described, which reduces a resulting width of pulses when a charge pulse is received from a particle detector, thereby reducing pile-up problems with pulses. Pulse shortening is obtained by resetting the pulse shortly after it exceeds its peak level at the apparatus output. The apparatus includes a charge-sensitive amplifier and a shaper which generates an output for subsequent discrimination circuits. A reset generator monitors the shaper output and generates a reset signal to the shaper when a peak has been detected.
    Type: Grant
    Filed: October 9, 2008
    Date of Patent: April 9, 2013
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Aviv Marks, Tuvia Liran
  • Patent number: 8415636
    Abstract: Disclosed is a two-dimensional X-ray detector array inspection method capable of recognizing two-dimensional X-ray detector arrays unsuitable for X-ray imaging by means of identifying quickly growing defective pixels. The two-dimensional X-ray detector array inspection method involves a bias voltage step for repeated supply and stopping of a bias voltage from a common electrode; a dark current value measurement step for measuring the pixel values of pixels in a non-X-ray-irradiating state; a defective pixel identification step for identifying defective pixels on the basis of the pixel values of the pixels measured in the dark current value measurement step; and a determination step for determining whether or not the two-dimensional X-ray array detector is suitable on the basis of the size of the missing pixel chunks or the total number of defective pixels identified in defective pixel identification step.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: April 9, 2013
    Assignee: Shimadzu Corporation
    Inventor: Kenji Sato
  • Patent number: 8415637
    Abstract: The present invention relates to quaternary compound scintillators and related devices and methods. The scintillators may include, for example, a mixed halide scintillator composition including at least two different CsLiLa halide compounds and a dopant. Related detection devices and methods are further included.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: April 9, 2013
    Assignee: Radiation Monitoring Devices, Inc.
    Inventors: Kanai S. Shah, William M. Higgins, Edgar V. Van Loef, Jaroslaw Glodo
  • Patent number: 8415638
    Abstract: A method for measuring high-energy radiation flux, comprising applying a low voltage to electrodes in an ion chamber filled with a fluid capable of forming ions through the interaction of the fluid with high energy radiation; measuring an ion current signal related to an ion current induced by the low voltage; determining a leakage current; determining a gain; determining a magnitude of the high-energy radiation flux based on the ion current signal, gain, and leakage current; and outputting the result of the magnitude of the high-energy radiation flux.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: April 9, 2013
    Assignee: Thermo Fisher Scientific Inc.
    Inventors: Alexander Joseph Esin, Alex Kulik, Nikolay Baturin
  • Patent number: 8415639
    Abstract: A quantum efficiency measurement method includes the steps of: disposing a sample at a predetermined position in an integrator having an integrating space; applying excitation light to the sample and measuring a spectrum in the integrating space as a first spectrum through a second window; configuring an excitation light incident portion so that excitation light after having passed through the sample is not reflected in the integrating space; applying the excitation light to the sample and measuring a spectrum in the integrating space as a second spectrum through the second window; and calculating a quantum efficiency of the sample based on a component constituting a part of the first spectrum and corresponding to a wavelength range of the excitation light, and a component constituting a part of the second spectrum and corresponding to a wavelength range of light generated by the sample from the received excitation light.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: April 9, 2013
    Assignee: Otsuka Electronics Co., Ltd.
    Inventors: Yoshihiro Osawa, Kazuaki Ohkubo
  • Patent number: 8415640
    Abstract: In a general aspect, a system includes a plurality of diamond nanowires disposed on the surface of a diamond substrate, at least some of the nanowires including a color center. The system also includes a light source configured to illuminate at least one of the plurality of nanowires with excitation light at a wavelength corresponding to an excitation wavelength of the color center included in the illuminated nanowire; and an optical receiver configured to receive a fluorescence emitted from the color center included in the illuminated nanowire in response to the excitation light.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: April 9, 2013
    Assignee: President and Fellows of Harvard College
    Inventors: Thomas M. Babinec, Birgit J. M. Hausmann, Mughees Khan, Yinan Zhang, Philip R. Hemmer, Marko Loncar
  • Patent number: 8415641
    Abstract: In a fluorescence observation device, a light source device generates illumination light and excitation light to be radiated onto an examination subject; a white-light image data acquisition unit generates a white-light image by capturing reflected light coming from the examination subject; a fluorescence image data acquisition unit generates a fluorescence image by capturing fluorescence generated at the examination subject; a quantification computation unit computes normalized fluorescence intensities, which are brightness values of individual pixels in the fluorescence image normalized by brightness values of corresponding pixels in the white-light image; a standard-data memory stores standard data indicating a typical correspondence relationship between the normalized fluorescence intensities and states of the examination subject; and an image-correction computation unit judges the states of the examination subject that correspond to the individual normalized fluorescence intensities on the basis of a min
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: April 9, 2013
    Assignee: Olympus Corporation
    Inventors: Fumiko Ono, Yasushige Ishihara
  • Patent number: 8415642
    Abstract: A multilayer structure for sustained conversion of a primary electromagnetic radiation into another electromagnetic radiation characterized by a spectrum of a higher average wavelength is disclosed. Also disclosed are methods of creating and using the inventive multilayer structure.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: April 9, 2013
    Assignee: Performance Indicator, LLC
    Inventors: Edward D. Kingsley, M. Glenn Horner, Satish Agrawal, Louis Cincotta
  • Patent number: 8415643
    Abstract: The invention comprises a charged particle beam acceleration and/or extraction method and apparatus used in conjunction with charged particle beam radiation therapy of cancerous tumors. Novel design features of a synchrotron are described. Particularly, turning magnets, edge focusing magnets, and extraction elements are described that minimize the overall size of the synchrotron, provide a tightly controlled proton beam, directly reduce the size of required magnetic fields, directly reduces required operating power, and allow continual acceleration of protons in a synchrotron even during a process of extracting protons from the synchrotron.
    Type: Grant
    Filed: November 5, 2011
    Date of Patent: April 9, 2013
    Inventor: Vladimir Balakin
  • Patent number: 8415644
    Abstract: A processing system includes a piping which extends annularly, such as in the form of a circular annular shape, around a beam path between a focusing lens and an interaction region. The piping includes, on a side which faces the interaction region, a plurality of exit openings for the gas towards the interaction region. The piping also includes a holder configured to pivot the piping about a pivot axis. The holder is parallel to the tilt axis of the object holder.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: April 9, 2013
    Assignee: Carl Zeiss Microscopy GmbH
    Inventor: Fabian Perez-Willard
  • Patent number: 8415645
    Abstract: It is aimed to prevent electrical charging inside a resin material as well as a surface of a resin vessel at a time of sterilizing the resin vessel by being irradiated with electron beam. A bottle support unit is mounted to a lower end portion of a cylindrical rotating shaft rotatably supported by a rotating wheel. The bottle support unit includes a pair of griper members by which a mouth portion of a bottle is gripped. The bottle rotated and conveyed in a state supported by the bottle support unit is irradiated with the electron beam from an electron beam irradiator to thereby sterilize the bottle. A ground electrode is disposed to be capable of being inserted into the interior of the resin vessel through a mouth portion thereof, and the interior of the resin vessel is irradiated with the electron beam in a state of the ground electrode being inserted into the resin vessel.
    Type: Grant
    Filed: January 21, 2010
    Date of Patent: April 9, 2013
    Assignee: Shibuya Kogyo Co., Ltd.
    Inventors: Toshiya Kobayashi, Mitsuomi Narita, Tomohiko Sugimori, Tsunehiko Yokoi, Yukinobu Nishino, Masami Hayashi, Hideki Nishikawa, Yukihiro Yamamoto, Tokuo Nishi
  • Patent number: 8415646
    Abstract: A proton beam guidance apparatus and a method of providing proton beams having sub-micron beam width and MeV energies. The apparatus is a structure having an enclosed channel that can reflect or guide protons by grazing incidence interactions. The enclosed channel is in some embodiments an annular channel. The enclosed channel is shaped to provide a helical path for each proton in the beam. Protons are provided to an input port of the channel, and after multiple grazing incidence interactions with the walls of the channel, are provided as an output beam having dimensions comparable to the cross sectional dimensions of the channel. The channels can have cross sectional dimensions of tens of nanometers or less. No externally applied electromagnetic fields are needed to guide the proton beam. Contemplated applications include use of the exit proton beams to provide medical treatment to patients.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: April 9, 2013
    Assignee: California Institute of Technology
    Inventors: Thomas Anthony Tombrello, Jr., Eran Nardi
  • Patent number: 8415647
    Abstract: The invention relates to a radiation device that includes a housing, a light-emitting unit and a light-absorbing unit which is provided with an inlet opening and a reflector element. The reflector element extends across the entire distance between the light-emitting unit and the inlet opening of the light-absorbing unit.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: April 9, 2013
    Assignee: 3M Innovative Properties Company
    Inventor: Martin G. Hartung
  • Patent number: 8415648
    Abstract: A non-contact, opto-electronic method to determine glass surface shape involves pattern projection in reflection from a screen. The pattern is formed of black and white or coloured squares with a central reference pattern taken as origin of the x-y axes in the subsequent quantitative analysis of the optical distortion in formed glass sheets or panels.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: April 9, 2013
    Assignee: Pilkington Group Limited
    Inventor: Michael R. Ehrick
  • Patent number: 8415649
    Abstract: A radiation imaging apparatus comprises a housing having an upper panel on the incident side of radiation, a bottom panel opposite to the upper panel, a side panel connecting the upper panel with the bottom panel. The housing accommodates a radiation detection panel, a light source and a chassis providing rigidity to the housing. The chassis has a transmissible part which transmit the calibration light from the light source, the radiation detection panel is fixed on the side of the upper panel, and the light source is fixed on the side of the bottom part of the chassis. Further, a detachable lid is formed in at least a part of the bottom panel, and the opening portion is formed so as to expose the light source.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: April 9, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventor: Masaaki Kobayashi
  • Patent number: 8415650
    Abstract: A resistive random access memory cell is formed on a semiconductor substrate. First and second diffused regions are disposed in the semiconductor substrate. A polysilicon gate is disposed above the first and second diffused regions. A first contact connects the first diffused region with a region of a first metal layer. A first interlayer dielectric layer is formed over the first metal layer and includes first and second vias, each including conductive plugs connected to the region of the first metal layer. First and second resistive random access memory devices formed over the first interlayer dielectric layer have first and second terminals, and include a dielectric layer and an ion source layer. The first terminals of the first and second resistive random access memory devices are coupled to the first metal layer by the first and second conductive plugs.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: April 9, 2013
    Assignee: Actel Corporation
    Inventors: Jonathan Greene, Frank W. Hawley, John McCollum
  • Patent number: 8415651
    Abstract: Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a memory element and a first electrode having an inner surface surrounding the memory element to contact the memory element at a first contact surface. The device includes a second electrode spaced away from the first electrode, the second electrode having an inner surface surrounding the memory element to contact the memory element at a second contact surface.
    Type: Grant
    Filed: June 12, 2008
    Date of Patent: April 9, 2013
    Assignee: Macronix International Co., Ltd.
    Inventor: Hsiang-Lan Lung
  • Patent number: 8415652
    Abstract: A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: April 9, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Gilberto Ribeiro, R. Stanley Williams
  • Patent number: 8415653
    Abstract: A method of fabricating a phase change memory element within a semiconductor structure includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region at a same layer within the semiconductor structure, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: April 9, 2013
    Assignee: International Business Machines Corporation
    Inventors: Matthew J. Breitwisch, Chandrasekharan Kothandaraman, Chung H. Lam
  • Patent number: 8415654
    Abstract: A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: April 9, 2013
    Assignee: Nitek, Inc.
    Inventors: Asif Khan, Qhalid Fareed, Vinod Adivarahan
  • Patent number: 8415655
    Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezoelectric effect; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film.
    Type: Grant
    Filed: August 12, 2009
    Date of Patent: April 9, 2013
    Assignee: Wooree E&L Co., Ltd.
    Inventors: Jung Tae Jang, Bun Hei Koo, Do Yeol Ahn, Seoung Hwan Park
  • Patent number: 8415656
    Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: April 9, 2013
    Assignees: Koninklijke Philips Electronics N.V., Philips Limileds Lighting Company, LLC
    Inventors: Rafael I. Aldaz, Aurelien J. F. David
  • Patent number: 8415657
    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.
    Type: Grant
    Filed: November 9, 2010
    Date of Patent: April 9, 2013
    Assignee: Intermolecular, Inc.
    Inventors: Xiangxin Rui, Pragati Kumar, Hanhong Chen, Sandra Malhotra
  • Patent number: 8415658
    Abstract: An organic electroluminescence device includes a first electrode, an organic layer formed on the first electrode and including a light-emitting layer, an intermediate layer formed on the organic layer; and a second electrode formed on the intermediate layer and having a thickness of 6 nm or less.
    Type: Grant
    Filed: June 14, 2010
    Date of Patent: April 9, 2013
    Assignee: Sony Corporation
    Inventor: Mitsuhiro Kashiwabara
  • Patent number: 8415659
    Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: April 9, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung-Ho Kim, Il-Jeong Lee, Do-Hyun Kwon, Choong-Youl Im, Hee-Seong Jeong, Su-Mi Lee