Abstract: The present specification discloses clonal cell lines susceptible to BoNT/A intoxication, methods of producing such clonal cell lines, and methods of detecting Botulinum toxin serotype A activity using such clonal cell lines.

Abstract: Methods are provided for the production of dendritic cells from monocytes that have been incubated at a temperature of 1° C.-34° C. for a period of approximately 6 to 96 hours from the time they are isolated from a subject. After the incubation period, the monocytes can then be induced to differentiate into dendritic cells. Mature dendritic cells made by the methods of the invention have increased levels of one or more of CD80, CD83, CD86, MHC class I molecules, or MHC class II molecules as compared to mature dendritic cells prepared from monocytes that have not been held at 1° C.-34° C. for at least 6 hours from the time they were isolated from a subject. Dendritic cells made by the methods of the invention are useful for the preparation of vaccines and for the stimulation of T cells.

Abstract: This invention provides a composition comprising an effective amount of monoclonal antibody 8H9 or a derivative thereof and a suitable carrier. This invention provides a pharmaceutical composition comprising an effective amount of monoclonal antibody 8H9 or a derivative thereof and a pharmaceutically acceptable carrier. This invention also provides an antibody other than the monoclonal antibody 8H9 comprising the complementary determining regions of monoclonal antibody 8H9 or a derivative thereof, capable of binding to the same antigen as the monoclonal antibody 8H9. This invention provides a substance capable of competitively inhibiting the binding of monoclonal antibody 8H9. This invention also provides an isolated scFv of monoclonal antibody 8H9 or a derivative thereof. This invention also provides the 8H9 antigen.

Abstract: The present invention relates to the field of oncology and provides novel compositions and methods for diagnosing and treating pancreatic cancer. In particular, the present invention provides pancreatic cancer stem cells useful for the study, diagnosis, and treatment of solid tumors.

Abstract: The present invention discloses the protein pleiotrophin secreted by the developing pancreas, and polynucleotides, which identify and encode this protein. The invention also relates to the use of these sequences in the diagnosis, study, prevention, and treatment of pancreatic diseases (e.g. diabetes), obesity, and/or metabolic syndrome.

Abstract: Methods of generating embryoid bodies (EBs) by culturing embryonic stem cells (ESCs) under static conditions followed by culturing the cells under dynamic conditions using e.g., a Glass Bulb-shaped Impeller (GBI) or shaking a culture vessel are provided. Also provided are methods of generating expanded and/or differentiated cells from the EBs of the invention and methods of using same for treating disorders requiring cell replacement therapy.

Abstract: Systems and methods for the removal of contaminants from a liquid culture microalgae and/or cyanobacteria comprise an let tube, a pump, a gas injector, a vertical chamber, and/or a collection container that promotes the production of foam in the microalgae culture, wherein the foam contains the contaminants.

Abstract: Provided are assays and methods for creating proto-tissues from aggregates of cells. The invention concerns assays and methods useful in tissue engineering and reconstruction techniques, specifically in the formation of macrotissues from microtissues using microtissue pre-culture time as a controlling parameter.

Abstract: Novel trehalose click polymers have in vitro and in vivo application in the cellular delivery of biologically active molecules, including nucleic acids and polypeptides. The trehalose click polymers of the present invention provide increased stability in serum as compared with other non-viral vectors, and are particularly useful in protecting nucleic acids against degradation.

Abstract: An apparatus and method of playing a side bet wager in a roulette game allow for a significant reward on the side bet. The side bet is on the appearance of three consecutive events where the number provided in the roulette game falls within three consecutively selected sets of numbers. The apparatus may be a standard roulette table with appropriate wager markings on the felt, a partially electronic table with wagering terminals and physical roulette wheel, or a completely electronic roulette table with virtual roulette wheel.

Abstract: A method of accumulating a quantity of seeds having a desired fatty acid characteristic is provided. The method includes removing a sample from each seed in a population of seeds while maintaining the germination viability of the seeds; contacting each sample with a solvent to form a mixture comprising fatty acid methyl esters; analyzing the mixture of fatty acid methyl esters from each sample to determine the fatty acid profile of the corresponding seed; selecting seeds having at least one desired fatty acid characteristic based on the analysis of the samples removed from the seeds; cultivating plants from the selected seeds; recovering seeds from the cultivated plants, wherein the recovered seeds are a subsequent generation of the selected seeds; and repeating the operations for one or more generations of the recovered seeds to thereby accumulate the quantity of seeds having the desired fatty acid characteristic.

Abstract: A system and method for tagging, tracking, locating and identifying people and vehicles transporting people using Perfluorocarbon tracers. An on-going problem faced by military as well as law enforcement personnel is that of friendly fire incidents. To prevent possible friendly-fire incidents, troops would separate the two layers of the uniform patch, thereby releasing a controlled release of the Perfluorocarbon vapors. Other “friendly” troops, equipped with sensors tuned to the specific perfluorocarbon characteristics would thus be able to literally view a plume around the tagged person or object. The system may conversely be used to tag enemies. Formulations of mixed perfluorocarbons may be used to provide coding of emissions.

Abstract: An apparatus, intended for use in analyzing particles in urine is disclosed, that comprising: a sample distribution section for distributing urine samples to a first aliquot and a second aliquot; a first specimen preparing section for preparing a first specimen for measuring urinary particles, containing at least erythrocytes, by mixing a first stain reagent and the first aliquot; a second specimen preparing section for preparing a second specimen for measuring bacteria by mixing a second stain reagent and the second aliquot; and an optical detecting section comprising a light source for irradiating a light to a specimen being supplied, a scattered light receiving element for detecting scattered light emitted from the specimen, and a fluorescence receiving element for detecting fluorescence emitted from the specimen. A method intended for use in analyzing particles in urine is also disclosed.

Abstract: Described are methods for assessing recurrence status in a breast cancer patient that include assaying a biological sample from the patient for a level of a biomarker selected from such as S100? or HOX-C1I, where positive detection of one or both of the biomarkers indicates a positive recurrence status. The method can be used for prognosis of poor disease free survival in a breast cancer patient, where positive detection of one or both of the biomarkers indicates poor disease survival. The method may also be used for diagnosis of recurrence, where positive detection of circulating S100? is a diagnostic variable of recurrence. The method of diagnosis is carried out on a patient who is undergoing first line therapy and/or a patient who has had surgery to remove a primary breast tumour.

Abstract: Crystals of a solvated cerium(III) halide solvate complex resulted from a process of forming a paste of a cerium(III) halide in an ionic liquid, adding a solvent to the paste, removing any undissolved solid, and then cooling the liquid phase. Diffusing a solvent vapor into the liquid phase also resulted in crystals of a solvated cerium(III) halide complex.

Abstract: The invention relates to a method for risk stratification for acute coronary syndrome (ACS), in particular acute myocardial infarction (AMI) and angina pectoris (AP), wherein provasopressin (proAVP) or fragments and partial peptides thereof, in particular copeptin or neurophysin II, is determined by an in vitro diagnosis.

Abstract: Protein phosphorylation is a major post-translational modification and it plays a pivotal role in numerous cellular functions. We present a composition that includes a soluble nanopolymer core functionalized with groups having an affinity for either metal ion or metal oxides which can be used for phosphopeptide enrichment. Exemplary compounds including PolyMAC-Zr, PolyMAC-Fe and PolyMAC-Ti demonstrate outstanding reproducibility, exceptional sensitivity, fast chelation time, and high phosphopeptide recovery from standard mixtures that include phosphorylated peptides. The composition can be used for phosphoproteome isolation from samples of medicinal, diagnostic or biological interest such as malignant breast cancer cells. Such compositions were used for the quantitative analysis of the changes in the tyrosine phosphoproteome in highly invasive breast cancer cells after induction of Syk kinase, a potent suppressor of tumor growth and metastasis.

Abstract: A composition comprising synthetic peptides for use as a peptide retention standard in liquid chromatography applications is disclosed Said synthetic peptides have a broad range of hydrophobicity while maintaining low variation in their molecular weights The synthetic peptides disclosed consist of the ammo acid sequences LGGGGGGDGSR, LGGGGGGDFR, LLGGGGDFG, LLLGGDFR, LLLLDFR, LLLLLDFR A method of predicting the hydrophobicity of an unknown peptide in liquid chromatography using a composition of peptide retention standards and a method of developing a Universal Hydrophobicity Index (UHI) for the measurement of peptide hydrophobicity in liquid chromatography are also described.

Abstract: The present invention relates to a compound for N-terminal substitution of polypeptides which is used in sequencing and quantifying amino acids and a method for sequencing and quantifying an amino acid sequence using the same. The method for sequencing and quantifying amino acids in accordance with the present invention leads to a relative quantitative analysis of proteins with very high reliability, and can distinctively discriminate between y-type ions and b-type ions on the MS/MS spectra, providing the means for realization of high-reliability protein identification.

Abstract: This invention is related to the field of the prevention and treatment of kidney disease. The treatment of kidney disease may be tailored depending upon the need for, or expectation of, long-term dialysis. For example, prediction of long-term dialysis treatment can be determined by monitoring urine biomarkers related to the development of chronic kidney disease. For example, a normalized time course of hyaluronic acid can be used to determine whether a patient having suffered acute kidney injury will require long-term dialysis.

Abstract: Polymeric sequence probes and methods are described that enhance the speed and sensitivity of detection of target analytes by combining a multiplicity of binding moieties specific for analyte, at least two of which are linearly arranged and optionally a multiplicity of detectable labels.

Abstract: A method of measuring concentration of a fuel is provided. First, a fuel cell unit having at least an anode, a cathode, and a membrane electrode assembly (MEA) is provided. Next, a fuel is supplied to the anode, while a reactive gas is supplied to the cathode. Then, the amount of the reactive gas supplied to the cathode is adjusted and the concentration of the fuel is estimated in accordance with the consumption rate of the reactive gas in the fuel cell unit, wherein a method of estimating the concentration of the fuel in accordance with a consumption rate of the reactive gas in the cathode includes measuring a concentration of the reactive gas supplied to the cathode and estimating the concentration of the fuel in accordance with a relationship between the concentration of the reactive gas supplied to the cathode and time.

Abstract: In utilizing photocurrent generated in the photoexcitation of a dye in specific detection of an analyte, highly accurate detection can be realized by discharging charged current generated in the formation of a sensor unit and, in the detection of photocurrent of a plurality of detection spots provided on a working electrode, discharging photocurrent which is derived from a detection spot subjected to the latest photocurrent measurement and becomes noise current.

Abstract: Described is a method of measuring fiber digestion in ruminants and calibrating spectrophotometers using the measured fiber digestion values. The method includes the steps of harvesting rumen fluid from at least one ruminant animal and combining the rumen fluid with a primer composition comprising a carbohydrate. The rumen fluid and carbohydrate are then incubated in a sealed container until a pre-determined pressure is achieved within the sealed container. A plant matter sample is digested with the rumen fluid so treated. The digested sample is the measured for absorbance or reflectance using a spectrophotometer. The digestion values and the absorbance or reflectance values are then correlated to construct a standard curve for predicting fiber digestion values using spectrophotometric analysis, preferably NIRS analysis.

Abstract: This method and device detects past use of drugs of abuse when the drug substance and its metabolites are no longer present in the body, based on the detection of the antibodies formed in response to said drug, and persist even after this drug and its metabolites are cleared from the body. False positive rate is reduced by screening out subjects with heightened inflammatory state. One embodiment of the invention sets forth the method and device comprising: testing a set of samples for levels of an inflammation biomarker; determining a subset of samples with inflammation biomarker level below a first predetermined threshold; testing samples within the subset of samples for a presence of drug-specific antibodies, for a pre-specified set of drugs; determining which samples within the subset have drug-specific antibody level exceeding pre-specified threshold; and providing an output indicating the samples within the subset having the drug-specific antibodies.

Abstract: A sequential solid phase immunoassay and system is disclosed. The immunoassay utilizes the secondary antibody method for the detection of antibodies in a membrane-based test. The system comprises a test strip including a nitrocellulose membrane having an immobilized antigen in a capture zone on the membrane and a stabilized liquid secondary antibody conjugate. The sequential solid phase immunoassay is performed in a sequential manner with the addition of a fluid specimen being followed by the addition of the stabilized liquid secondary antibody conjugate. The sequential procedure using the system includes allowing the fluid specimen containing antibodies specific to the antigen to pass laterally from the test strip first end through the capture zone. The immobilized antigens in the capture zone capture antibodies specific to the antigen. The stabilized liquid secondary antibody conjugate then binds to the captured antibodies and can be detected visually or by a machine or reader.

Abstract: The present invention generally relates to methods of constructing liquid bridges and methods of forming predetermined combinations of samples using liquid bridges.

Abstract: This invention pertains to methods, mixtures, kits and/or compositions for the determination of analytes by mass analysis using unique labeling reagents or sets of unique labeling reagents. The labeling reagents can be isomeric or isobaric and can be used to produce mixtures suitable for multiplex analysis of the labeled analytes.

Abstract: The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

Abstract: The present invention discloses a method for monitoring the removal of a polycrystalline silicon dummy gate, comprising the steps of: forming a polycrystalline silicon dummy gate structure on a surface of a wafer; determining a measurement target and an error range of mass of the wafer; and measuring the mass of the wafer by a mass measurement tool after polycrystalline silicon dummy gate removal to determine whether the polycrystalline silicon dummy gate has been completely removed. According to the measurement method of the present invention, the full wafer may be quickly and accurately measured without requiring a specific test structure, to effectively monitor and determine whether the polysilicon dummy gate is thoroughly removed, meanwhile said measurement method gives feedback directly, quickly and accurately without causing any damage to the wafer.

Abstract: A sample with at least a first structure and a second structure is measured and a first model and a second model of the sample are generated. The first model models the first structure as an independent variable and models the second structure. The second model of the sample models the second structure as an independent variable. The measurement, the first model and the second model together to determine at least one desired parameter of the sample. For example, the first structure may be on a first layer and the second structure may be on a second layer that is under the first layer, and the processing of the sample may at least partially remove the first layer, wherein the second model models the first layer as having a thickness of zero.

Abstract: A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.

Abstract: According to one exemplary embodiment, a non-destructive method for determining a breakdown voltage of a dielectric layer on a semiconductor substrate includes injecting a test current in increasing ramp steps into the dielectric layer. The method further includes measuring a test voltage across the dielectric layer at each increasing ramp step of the test current. The method further includes detecting a dropped test voltage in response to the increasing ramp steps of the test current. The ramp steps of the test current can be substantially logarithmically increased. The breakdown voltage of the dielectric layer can be designated to be substantially equal to the dropped test voltage.

Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, the connecting layer being etchable by alkaline solution, a bottom surface of the second n-type GaN layer facing towards the connecting layer having a roughened exposed portion, the GaN on the bottom surface of the second n-type GaN layer having an N-face polarity, a blind hole extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer, and an annular rough portion formed on the bottom surface of the second n-type GaN layer and surrounding each blind hole.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and forming a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes.

Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.

Abstract: A multi-dimensional solid state lighting (SSL) device array system and method are disclosed. An SSL device includes a support, a pillar having several sloped facets mounted to the support, and a flexible substrate pressed against the pillar. The substrate can carry a plurality of solid state emitters (SSEs) facing in various directions corresponding to the sloped facets of the pillar. The flexible substrate can be a flat substrate prepared using planar mounting techniques, such as wirebonding techniques, before bending the substrate against the pillar.

Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Abstract: Manufacturing a laser diode includes growing an active layer, a first InP layer, and a diffraction grating layer; forming an alignment mark having a recess by etching the diffraction grating layer and the first InP layer; forming a first etching mask; forming a diffraction grating in the diffraction grating layer using the first etching mask; forming a modified layer containing InAsP on a surface of the alignment mark recess by supplying a first source gas containing As and a second source gas containing P; growing a second InP layer on the diffraction grating layer and on the alignment mark; forming a second etching mask on the second InP layer; selectively etching the second InP layer embedded in the recess of the alignment mark through the second etching mask by using the modified layer serving as an etching stopper; and forming a waveguide structure using the alignment mark.

Abstract: A manufacturing method of a thin film transistor array panel includes forming a gate line, forming a gate insulating layer on the gate line, forming a data line including a drain electrode on the gate insulating layer, forming a passivation layer on the gate insulating layer, the data line, and the drain electrode, forming a negative photosensitive organic layer on the passivation layer, heat treating the negative photosensitive organic layer to form an insulating layer including a first portion, and a second portion that is thinner than the first portion, and forming a pixel electrode, a first contact assistant, and a second contact assistant on the insulating layer. The pixel electrode is disposed on the first portion, the first and second contact assistants are disposed on the second portion, and the thickness of the second portion is less than about 1.5 micrometers (?m).

Abstract: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting layer, and the second n-type GaN layer are formed on the substrate in sequence. The connecting layer is etchable by alkaline solution, and a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughed exposed portion. The GaN on the bottom surface of the second n-type GaN layer is N-face GaN. A top surface of the second n-type GaN layer facing away from the connecting layer includes a first area and a second area. The light emitting layer and the p-type GaN layer are formed on the first area of the top surface of the second n-type GaN layer in sequence.

Abstract: Methods of forming electro-micromechanical resonators provide passive temperature compensation of semiconductor device layers used therein. A first substrate is provided that includes a first electrically insulating temperature compensation layer on a first semiconductor device layer. A step is performed to bond the first electrically insulating temperature compensation layer to a second substrate containing the second electrically insulating temperature compensation layer therein, to thereby form a relatively thick temperature compensation layer. A piezoelectric layer is formed on the first electrically insulating temperature compensation layer and at least a first electrode is formed on the piezoelectric layer.

Abstract: A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by therm

Abstract: A method of assembling a pressure sensor device includes providing a substrate having a plurality of substrate connection pads. A pressure sensor die is attached to a first major surface of the substrate and bond pads of the pressure sensor die are electrically connected to the respective substrate connection pads. A retractable cavity pin is placed on the first major surface of the substrate such that the cavity pin covers the pressure sensor die and the electrical connections to the die. A molding compound is then dispensed onto the first major surface of the substrate such that the molding compound surrounds the pressure sensor die and the cavity pin. The cavity pin is retracted such that a cavity is formed around the pressure sensor die and a gel material is dispensed within the cavity such that the gel material fills the cavity and covers the pressure sensor die.

Abstract: P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepared. Through holes are formed in each of the separator sheets and then filled with a conductive material. Thereafter, the p-type semiconductor sheet, the separator sheet, the n-type semiconductor sheet and the separator sheet are stacked. The resultant laminated body is cut into a predetermined size and then subjected to a baking process.

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a copper indium disulfide material and a thickness of substantially copper sulfide material. The thickness of the copper sulfide material is removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a copper species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic.

Abstract: A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack.