Abstract: A sensor array package can include a sensor disposed on a first side of a substrate. Signal trenches can be formed along the edges of the substrate and a conductive layer can be deposited in the signal trench and can couple to sensor signal pads. Bond wires can be attached to the conductive layers and can be arranged to be below a surface plane of the sensor. The sensor array package can be embedded in a printed circuit board enabling the bond wires to terminate at other conductors within the printed circuit board.

Abstract: Apparatus for performing dicing of die on wafer interposers. Apparatuses are disclosed for use with the methods of dicing an interposer having integrated circuit dies mounted thereon. An apparatus includes a wafer carrier mounted in a frame and having a size corresponding to a silicon interposer, a fixture mounted to the wafer carrier and comprising a layer of material to provide mechanical support to the die side of the silicon interposer, the fixture being patterned to fill spaces between integrated circuit dies mounted on an interposer; and an adhesive tape disposed on a surface of the fixture for adhering to the surface of a silicon interposer. Additional alternative apparatuses are disclosed.

Abstract: An interposer to form a frame around a bottom chip bonded to a package substrate and to standoff a top chip or package for clearance of the bottom chip. The interposer has pins arrayed on a first side which are soldered to the package substrate for reduced interposer z-height and pads arrayed on a second side to which the top package (chip) is bonded. During assembly, the interposer pins may be pressed against pre-soldered pads and the solder reflowed to join the interposer to the package substrate. A top package (chip) is then joined to an opposite side of the interposer to integrate the first and second chips.

Abstract: A chip assembly includes a PCB, a connecting pad fixed on the PCB, and a chip. The connecting pad defines a through hole. The chip is received in the through hole and fixed on the PCB by an adhesive distributed in the through hole. A thickness of the adhesive is less than that of the connecting pad.

Abstract: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.

Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.

Abstract: A device and method for fabricating a device is disclosed. An exemplary device includes a first conductive layer disposed over a substrate, the first conductive layer including a first plurality of conductive lines extending in a first direction. The device further includes a second conductive layer disposed over the first conductive layer, the second conductive layer including a second plurality of conductive lines extending in a second direction. The device further includes a self-aligned interconnect formed at an interface where a first conductive line of the first plurality of conductive lines is in electrical contact with a first conductive line of the second plurality of conductive lines. The device further includes a blocking portion interposed between a second conductive line of the first plurality of conductive lines and a second conductive line of the second plurality of conductive lines.

Abstract: A semiconductor device capable of performing sufficient power supply while suppressing an increase in a manufacturing cost. The semiconductor device has a semiconductor substrate, a multilayer interconnection layer provided over the semiconductor substrate, an Al wiring layer that is provided over the multilayer interconnection layer and has pad parts, and a redistribution layer that is provided over the Al wiring layer and is coupled with the Al wiring layer, in which the redistribution layer is comprised of a metal material whose electric resistivity is lower than that of Al and is not formed over the pad parts.

Abstract: A substrate bonding method comprises the following steps. Firstly, a first substrate and a second substrate are provided, wherein a surface of the first substrate is covered by a first Ag layer and a surface of the second substrate is covered by a second Ag layer and a metallic layer from bottom to top, wherein the metallic layer comprises a first Sn layer. Secondly, a bonding process is performed by aligning the first and second substrates followed by bringing the metallic layer into contact with the first Ag layer followed by applying a load while heating to a predetermined temperature in order to form Ag3Sn intermetallic compounds. Finally, cool down and remove the load to complete the bonding process.

Abstract: A method and apparatus of packaging a semiconductor device with a clip is disclosed. The clip defines a first contact region and a second contact region on a same face of the at least one clip. The chip defines a first face, and a second face opposite to the first face, the first contact region being attached to the first face of the chip and the second contact region being located within a same plane with the second face of the clip.

Abstract: The semiconductor device according to the present invention includes a semiconductor chip, an island having an upper surface to which the semiconductor chip is bonded, a lead arranged around the island, a bonding wire extended between the surface of the semiconductor chip and the upper surface of the lead, and a resin package collectively sealing the semiconductor chip, the island, the lead and the bonding wire, while the lower surface of the island and the lower surface of the lead are exposed on the rear surface of the resin package, and the lead is provided with a recess concaved from the lower surface side and opened on a side surface thereof.

Abstract: An integrated circuit structure comprises a plurality of insulator layers (connected to each other) that form a laminated structure. Further included are via openings within each of the insulator layers, and conductive via material within the via openings. The conductive via material within corresponding via openings of adjacent insulator layers are electrically connected to form continuous electrical via paths through the insulator layers between the top surface and the bottom surface of the laminated structure. Within each of the continuous electrical via paths, the via openings are positioned relative to each other to form a diagonal structural path of the conductive via material through the laminated structure. The corresponding via openings of the adjacent insulator layers partially overlap each other. The diagonal structural paths are non-perpendicular to the top surface and the bottom surface.

Abstract: A package carrier includes a metal substrate, a pad, a dielectric layer, and a circuit layer. The metal substrate has a first surface and a second surface opposite to the first surface. The pad is disposed on the first surface. The dielectric layer is disposed on the first surface and covers the pad. A thickness of the dielectric layer is less than 150 ?m. The circuit layer is embedded in the dielectric layer and connected to the pads.

Abstract: A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an opening portion by dry-etching a laminated film of them; a step of forming a bump electrode inside the opening portion; and a step (bonding step) of bonding the one surface of the first substrate having a bump electrode formed thereon and one surface of a second substrate having a bump electrode formed thereon to each other. A surface treatment on the inorganic insulating film is performed subsequent to the step of forming the opening portion but prior to the bonding step. By performing the surface treatment on the organic insulating film, connecting property between the substrates can be improved.

Abstract: A wiring substrate includes a core substrate. The core substrate includes a first surface, a second surface, and an opening extending through the core substrate between the first and second surfaces. A first conductive film is formed on the first surface and covers the opening. A second conductive film is formed on the second surface. The second conductive film covers the opening. An electronic component is arranged in the opening and connected to the first conductive film. An insulator fills the opening. A first wiring portion includes alternately stacked insulative layers and wiring layers and covers the first surface of the core substrate and the first conductive film. A second wiring portion includes alternately stacked insulative layers and wiring layers, and covers the second surface of the core substrate and the second conductive film.

Abstract: According to the nonvolatile memory device in one embodiment, contact plugs connect between second wires and third wires in a memory layer and a first wire connected to a control element. Drawn wire portions connect the second wires and the third wires with the contact plug. The drawn wire portion connected to the second wires and the third wires of the memory layer is formed of a wire with a critical dimension same as the second wires and the third wires and is in contact with the contact plug on an upper surface and both side surfaces of the drawn wire portion.

Abstract: A method is disclosed for forming conductive vias in a substrate by filling preformed via holes, preferably through via holes, with conductive material. The method includes providing a plurality of preformed objects at least partly including ferromagnetic material on a surface of the substrate; providing a magnetic source on an opposite side of the substrate with respect to the plurality of preformed objects, thereby at least partly aligning at least a portion of the preformed objects with a magnetic field associated with the magnetic source; and moving the magnetic source relative the substrate, or vice versa, thereby moving the at least portion of the preformed objects into at least a portion of the via holes.

Abstract: A 3D interconnect structure and method of manufacture are described in which a through-silicon vias (TSVs) and metal redistribution layers (RDLs) are formed using a dual damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and etch stop layer during the process flow.

Abstract: Disclosed herein is a device that includes: first lines formed on a first wiring layer extending in a first direction; second lines formed on a second wiring layer extending in a second direction; and conductor plugs connecting the first lines to the second lines such that the first and second lines form a mesh-structure wiring. The first lines include first enlarged portions at intersection positions where the first and second lines cross to each other, a width in the second direction of the first enlarged portions is wider than a line width of the first lines at other than the intersection position. The second lines include second enlarged portions at the intersection positions, a width in the first direction of the second enlarged portions is wider than a line width of the second lines at other than the intersection position.

Abstract: A method and system is provided by which multiple semiconductor die stacks can be assembled in a batch manner, and which also provides for die alignment tolerances required by microelectromechanical systems and other system-in-package applications. The batch process and accuracy is provided, in part, by an intermediate die attach carrier that has multiple die pockets fabricated to hold a set of die with an alignment required for the application. Die are placed in each pocket using a die sorting process. Then a batch process operation is performed in which wafer or strip-level alignment and bonding tools are used to join the die in the intermediate die attach carrier in stacks with a second set of die.

Abstract: A Multi-Chip Module (MCM) package includes a substrate having a plurality of metal terminals and at least a first die attach area. An encapsulant is around the substrate including on at least a portion of the topside and at least a portion of the bottomside of the package. At least a first device including at least two device terminals is attached face up on the first die attach area. At least a second device including at least two device terminals is flip-chip attached and stacked on the first device. At least one of the first device and second device include a transistor. At least one metal clip is between the first device and second device including a plurality of clip portions isolated from one another connecting at least one device terminal of each of the first device and second device to respective metal terminals of the plurality of metal terminals.

Abstract: Embodiments of the invention provide semiconductor chip stacking assemblies that provide direct attachment of a first semiconductor device with a second semiconductor device. An assembly comprises a first semiconductor chip that has a first and a second set of electrical interconnect regions disposed on its surface and a second semiconductor chip. The first set of electrical interconnect regions are electrically connected with the electrical interconnect regions of a second semiconductor chip, and the second set of electrical interconnect regions are electrically interconnected with the substrate. Direct electrical connections are for example, silicon photonics device-to-driver or device-to-signal converters, logic-to-memory, memory-to-memory, and logic-to-logic chip interconnections.

Abstract: The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.

Abstract: A sensor array package can include a sensor disposed on a first side of a substrate. Signal trenches can be formed along the edges of the substrate and a conductive layer can be deposited in the signal trench and can couple to sensor signal pads. Bond wires can be attached to the conductive layers and can be arranged to be below a surface plane of the sensor. The sensor array package can be embedded in a printed circuit board enabling the bond wires to terminate at other conductors within the printed circuit board.

Abstract: A wafer assembly includes a process wafer and a carrier wafer. Integrated circuits are formed on the process wafer. The carrier wafer is bonded to the process wafer. The carrier wafer has at least one alignment mark.

Abstract: A vehicle misting device and method that is operable is dry and humid environments are provided. The device may also include a payment system and fan.

Abstract: The present disclosure provides for an apparatus for recovering exhaust energy. The apparatus is generally provided with a waste energy stream inlet for directing an incoming waste heat energy stream from a waste energy stream generator, a heat exchanger in fluid communication with the waste energy stream inlet, a waste energy stream outlet distal from the waste energy stream inlet, a recycled energy stream outlet operatively connected and in fluid communication with said air flow that receives heat, and collecting means.

Abstract: A fabrication method of nanoparticles is provided. A substrate having a plurality of pillar structures is provided and then a plurality of ring structures is formed to surround the plurality of the pillar structures. The inner wall of each ring structure surrounds the sidewall of each pillar structure. A portion of each pillar structure is removed to reduce the height of each pillar structure and to expose the inner wall of each ring structure. The ring structures are separated from the pillar structures to form a plurality of nanoparticles. Surface modifications are applied to the ring structures before the ring structures are separated from the pillar structures on the substrate.

Abstract: A system for debinding a green body in the form of an orthodontic appliance may include a pressure vessel configured to contain a supercritical fluid. A source of a fluid chemical may be coupled to the pressure vessel to supply the fluid chemical to the pressure vessel. A heat source may be configured to heat the fluid chemical. A pump may pressurize the fluid chemical to at least the supercritical pressure. A collection vessel is coupled to the pressure vessel to capture the binder removed from the green bodies as at least the pressure of the supercritical fluid is reduced. A method of manufacturing an orthodontic appliance includes exposing green bodies including particles and a binder to a supercritical fluid to remove at least some of the binder from the green bodies, and collecting the removed binder from the supercritical fluid as the supercritical fluid transitions to a non-supercritical fluid.

Abstract: Provided is an apparatus and method for manufacturing a ball joint that are capable of reducing a torque applied between a ball stud and a ball seat. The ball joint manufacturing apparatus includes an upper mold having a shape configured to injection-mold a ball seat formed of a synthetic resin material and surrounding the outside of a spherical head part of a ball stud; a lower mold installed under the upper mold and having a molding surface for forming a portion of the ball seat; a fixing jig configured to fix the ball stud to a molding position of the upper mold and the lower mold; and a rotary member configured to rotate the fixing jig.

Abstract: A transfer apparatus transfers a pattern of an original to a resin on a shot region of a substrate. The original includes a first surface and second surface which are surfaces opposite to each other. The first surface includes a pattern region where the pattern is formed, and the second surface includes a holding surface. The apparatus includes a plurality of holding units configured to hold the holding surface of the original, a plurality of driving units configured to drive the plurality of holding units, respectively, and a control unit configured to control driving of the plurality of holding units by the plurality of driving units to align the pattern region with the shot region of the substrate.

Abstract: Thermally sensitive polymers containing polymerizable carbon-carbon unsaturation and/or aliphatically bound halogen are devolatilized in a devolatilizing extruder. The thermally sensitive polymer is blended with a second polymer, which does not contain polymerizable carbon-carbon unsaturation or more than 5% by weight aliphatically bound halogen, and which has a molecular weight of from 25,000 to 175,000. The blend is then devolatilized in the extruder to produce a devolatilized polymer blend. Thermal degradation of the thermally sensitive polymer is minimized in this process.

Abstract: A method of reducing the number or size of voids in a polyurethane comprises reacting the formulation components in a container having an inner surface, or having a liner that has an inner surface, that has been modified to reduce the shear forces that normally accompany introduction of such components into a container. This is done by modifying the inner container's or container liner's surface by profiling and/or engraving it, or by including as a liner a mesh. The profiling and/or engraving or mesh serves to alter the formulation's flow dynamics such that the polyurethane has fewer and/or smaller voids, i.e., has a more uniform density, than polyurethanes formed without the modification.

Abstract: A kneading apparatus for a thermoplastic resin, includes: a plasticizing cylinder which has a high pressure kneading zone and a pressure reduction zone; a screw in the plasticizing cylinder; a downstream side seal mechanism which shuts off communication between the high pressure kneading zone and the pressure reduction zone; and a pressure reduction zone pressure adjusting mechanism which is connected to the pressure reduction zone and which controls a pressure of the pressure reduction zone so that the pressure is not less than an atmospheric pressure and the pressure is not more than a maximum pressure of the high pressure kneading zone that is achieved when kneading a molten resin with a pressurized fluid, when the downstream side seal mechanism shuts off the communication between the high pressure kneading zone and the pressure reduction zone.

Abstract: A method and apparatus for controlling processing temperatures and the activation of polymer by way of machine to control, and control to machine signalling, that allows heat energy compensation for polymer heat energy loss. This is useful when a lower temperature substance, like water is added to expand natural or man made polymers within short distances like that of a nozzle.

Abstract: Disclosed is a method and apparatus for manufacturing a melt-blown fabric web, by which a melt-blown fabric web having improved filament cohesion and excellent bulky characteristics and sound-absorbing performance is manufactured. The apparatus includes a heat extruder for heating a thermoplastic resin composition and extruding the melted thermoplastic resin, a melt-blown fiber spinner for spinning the extruded thermoplastic resin as a melt-blown fiber in a filament form, a variable gas injector for injecting gas whose injection speed and injection quantity are continuously changed at random to the melt-blown fiber spun from the melt-blown fiber spinner to cause the injected gas to collide with the spun melt-blown fiber, and a collector for collecting the melt-blown fiber, which is spun from the melt-blown fiber spinner and collides with the gas, to form a melt-blown fabric web.

Abstract: In a processing plant for producing plastics material granulate, the start-up takes place in such a way that a screw machine is firstly driven by means of a drive device and then plastics material to be processed is fed by means of a metering device into the screw machine. At least one conveying position of the plastics material in the screw machine is determined by means of a control device by evaluating at least one measuring signal. Depending on the conveying position determined, a granulating device is activated and put into operation. The method according to the invention allows a direct start-up of the processing plant without the use of a start-up valve. This ensures an easy and safe start-up of the processing plant.

Abstract: The disclosure relates to transition metal compositions, methods of making the compositions, articles prepared from the compositions, and methods of making the articles. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A patch antenna includes: a dielectric layer made of an insulation material, and having upper and lower surfaces, and a through hole; a radiation metal layer disposed on the upper surface of the dielectric layer, and having a first plate body, a first aperture aligned with the through hole, and a first protruding portion extending from a peripheral edge of the first aperture into the through hole; and a grounding metal layer disposed on the lower surface of the dielectric layer, and having a second plate body, a second aperture aligned with the through hole, and a second protruding portion extending from a peripheral edge of the second aperture into the through hole. The first and second protruding portions contact each other in the through hole so that the radiation and grounding metal layers are electrically connected. A method of making a patch antenna is also disclosed.

Abstract: An extruder is disclosed, and more particularly, to an integrated single screw extruder and a twin screw extruder for mixing, compounding, kneading and/or extruding of materials. The integrated extruder includes a first barrel assembly and a second barrel assembly. The integrated extruder further includes a first screw having a first threaded portion and a second threaded portion. The first threaded portion is housed within the first barrel assembly and is configured to provide upstream material processing. The second threaded portion is housed within the second barrel assembly and is configured to provide downstream material processing. The integrated extruder further includes a second screw having a non-threaded shaft portion and a threaded portion. The threaded portion of the second screw is housed within the second barrel assembly and is configured to provide the downstream material processing with the second threaded portion of the first screw.

Abstract: The present invention provides an optical compensation film, which has excellent visibility such as light leakage, uneven color tone and front contrast, and can simultaneously realize retardation and wavelength dispersion. The optical compensation film is characterized by containing a cellulose ester, the following polymer (a), and the following compound (b). (a) A polymer produced by copolymerizing an ethylenically unsaturated monomer having in its molecule a partial structure represented by Formula (1) with at least one ethylenically unsaturated monomer. (b) An esterified compound produced by esterifying all or a part of OH groups in a compound (A) having one furanose structure or one pyranose structure, or an esterified compound produced by esterifying all of or a part of OH groups in a compound (B) containing nor less than 2 and not more than 12 structures of at least one of a furanose structure or a pyranose structure.

Abstract: An extrusion apparatus including a die and a mask are provided such that no slots feed directly into the longitudinal skin forming gap between the mask and the die. In a method of forming a die adapted to improve skin uniformity of extruded cellular ceramic substrates a slotted block of die material is provided including central slots adapted to form a cellular matrix of the substrate and peripheral slots located outwardly of the central slots designed to be covered by a skin former mask and adapted to extrude peripheral batch material. An arcuate skin former is cut corresponding to a target shrinkage so as to intersect the slotted block such that skin flow from tangent slots at 90 degree positions of the die is limited to the peripheral batch material.

Abstract: There is disclosed a method for producing a moulded plastic product having an outer skin and in inner core. The method is particularly suitable for making structural products such as panels or the like from recycled plastic material. The method comprises the steps of: providing a mould having a mould cavity; forming an outer skin from a first plastic material on at least two opposed surfaces inside the mould cavity; forming an inner core from a second plastic material inside the mould cavity; and at least partially curing the plastic materials to form a moulding inside the mould cavity via the application of heat. The method is characterised by the subsequent steps of (optionally pre-cooling the moulding and then) simultaneously cooling the moulding and compressing the moulding so as to reduce its size in at least one dimension to a desired dimension of the finished product.

Abstract: A mould including: a central core having a side wall with a plane external surface; an internal mould element having an internal surface facing the external surface of the central core, with surfaces inclined to the vertical in order to form an angle of clearance, and a substantially vertical external surface; an external mould element fitted against the internal mould element and having a substantially vertical internal surface facing the external surface of the internal mould element; at least one of the facing surfaces being designed to receive a substantially vertical lateral preform so that the internal mould element and the external mould element are suitable for clamping said lateral preform.

Abstract: A module (1) for holding at least one bushing (17) within a recess, wherein it comprises two side surfaces (2, 3), an upper (4) and a lower (5) surface and at least one end surface (6), wherein the upper (4) and lower (5) surfaces are of different width and arcs, respectively, in their cross-section, and the side surfaces (2, 3) are of equal height, and when coupled to a second module (8) by its side surfaces (3, 9), which second module (8) optionally may also hold at least one bushing (17), the sum of the angle (alpha) between the optionally imaginary plane side surface (12) of the one module (1) and the tangent (10) to its upper surface (4) at the intersection (A) with the side surface (3) and the angle (beta) between the optionally imaginary plane side surface (13) of the other module (8) and the tangent (11) to its upper surface (15) at the intersection (B) with the side surface (9) is at least 180 degrees and/or a plurality of modules (1), optionally when holding the bushings (17), form at least a sectio

Abstract: A transfer system (1) for transferring a fine transfer pattern (M1) formed in a mold (M) to a to-be-molded material (D) provided on a substrate (W) includes a positioning device (3) configured to position the substrate (W) relative to the mold (M) and to bond the mold (M) and the substrate (W) together after the positioning, and a transfer device (5) provided separately from the positioning device (3) and configured to receive the mold (M) and the substrate (W) positioned and bonded together by the positioning device (3), and to cure the to-be-molded material (D) while pressing the mold (M) and the substrate (W) thereby to perform transfer.

Abstract: Lipid-based wax compositions and their methods of making are provided for compositions substantially free of fat bloom. The compositions comprise approximately 7-80 percent by weight triacylglycerides and approximately 20-93 percent by weight monoacylglycerides and diacylglycerides combined. The methods comprise blending the monoacylglycerides, diacylglycerides, and triacylglycerides in the lipid-based wax composition by heating the lipid-based wax composition at a sufficiently high temperature to destroy substantially all crystal structure within the lipid-based wax composition. The methods further comprise pouring the lipid-based wax composition into a mold or a container having a surface and a core, wherein the pouring is conducted at a temperature at least 15° C. greater than the congeal point of the lipid-based wax composition. The methods further comprise cooling the lipid-based wax composition under conditions sufficient to cool the core to at least 5° C.

Abstract: A mold for manufacturing hemispherical sections for a golf ball includes a mold plate and a movable insert. The mold plate includes a first surface. The movable insert includes a second surface. The movable insert is connected to the mold plate. The first surface of the mold plate and the second surface of the movable insert may move relative to one another during molding of a hemispherical section for a golf ball.

Abstract: An apparatus includes one or more die groups which are movable independently of one another, each including a female part having a matrix cavity and a male part destined to penetrate into the cavity such as to define a forming chamber of the product, the cavity configured to contain a batch of material. The apparatus further includes a heating station having a heater to bring the plastic material to the fluid state, and a die group cooling station downstream of the heating station. The die groups are free to be cyclically inserted in the heating station and subsequently transferred to the cooling station. A thrust group is associated to a respective die group and is configured to provide a thrust for penetrating the male part into the cavity during the stage of forming the product, the thrust group being integral with the respective die-group in displacements during the operations performed.

Abstract: A method for making a carbon nanotube film includes the following steps. An original carbon nanotube film is provided and includes a number of carbon nanotubes substantially joined end-to-end by van der Waals force and oriented along a first direction. A patterned carbon nanotube film is formed and defines a number of through holes arranged in at least one row in the first direction, the through holes of the at least one row includes at least two spaced though holes. The patterned carbon nanotube film is treated with a solvent such that the patterned carbon nanotube film is shrunk into the carbon nanotube film includes a number of spaced carbon nanotube linear units and a number of carbon nanotube groups, and the carbon nanotube groups are joined with the carbon nanotube linear units by van der Waals force.