Abstract: An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating.

Abstract: A method of etching through-substrate vias comprising depositing a layer of embossable material on a first side and a second side of a thin-film stack, the thin-film stack including a base substrate, embossing the embossable material deposited on the first side and the second side of the thin-film stack with a pattern, hardening the embossable material, and etching the first and second sides of the thin-film stack, the etching of the second side of the thin-film stack forming vias through the base substrate.

Abstract: Methods of forming a dielectric liner layer on a semiconductor substrate are described. The method may include flowing a phosphorus-containing precursor with a silicon-containing precursor and an oxygen-containing precursor over the substrate to deposit a dielectric material. The dielectric material may be deposited along a field region and within at least one via on the substrate having a depth of at least 1 ?m. The method may also include forming a liner layer within the via with the dielectric material. The liner may include a silicon oxide doped with phosphorus, and the thickness of the liner layer at an upper portion of the via sidewall may be less than about 5 times the thickness of the liner layer at a lower portion of the via sidewall.

Abstract: Embodiments are directed to semiconductor packaging having reduced sized plated through hole (PTH) pads by eliminating the margin of the pad-to-PTH alignment and enabling finer traces on the core of the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

Abstract: Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

Abstract: A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.

Abstract: A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuK?1 ray (?=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2? (? is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2? range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2? range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2? range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less.

Abstract: When a semiconductor device having a surface provided with a flexible protective material is manufactured, the misalignment of the protective material occurs at the time of disposing the protective material or performing adhesion treatment. In the case where the terminal portion over the substrate has a length X of 5 mm or less, by providing a step layer with a thickness of 0.38 X or more and 2 mm or less over the element portion, a space is formed between a surface of the terminal portion and the protective material even though the protective material disposed over the step layer so as to cover the element portion is overlapped with the terminal portion. By using an attaching member including an elastic material with a surface hardness of 50 or more and 100 or less in this state, the protective material and the substrate may be attached to each other.

Abstract: Methods for removal of fins from a semiconductor structure are provided. A fin liner is applied to the fins. The fin liner is then removed from the fins that are to be removed. The fin liner is of a material that is selective compared to the semiconductor fins. Hence, the fins can be removed without significant damage to the fin liner. The subsets of fins that are to be removed are then removed, while the fin liner protects the adjacent fins that are to be kept.

Abstract: The present invention is directed to post-deposition, wet etch processes for patterning AuSn solder material and devices fabricated using such processes. The processes can be applied to uniform AuSn layers to generate submicron patterning of thin AuSn layers having a wide variety of features. The use of multiple etching steps that alternate between different mixes of chemicals enables the etch to proceed effectively, and the same or similar processes can be used to etch under bump metallization. The processes are simple, cost-effective, do not contaminate equipment or tools, and are compatible with standard cleanroom fabrication processes.

Abstract: Methods of forming integrated circuit devices utilize fine width patterning techniques to define conductive or insulating patterns having relatively narrow and relative wide lateral dimensions. A target material layer is formed on a substrate and first and second mask layers of different material are formed in sequence on the target material layer. The second mask layer is selectively etched to define a first pattern therein. Sidewall spacers are formed on opposing sidewalls of the first pattern. The first pattern and sidewall spacers are used collectively as an etching mask during a step to selectively etch the first mask layer to define a second pattern therein. The first pattern is removed to define an opening between the sidewall spacers. The first mask layer is selectively re-etched to convert the second pattern into at least a third pattern, using the sidewall spacers as an etching mask. The target material layer is selectively etched using the third pattern as an etching mask.

Abstract: A method of manufacturing a semiconductor device, which forms a pattern by performing pattern transformation steps multiple times, comprises setting finished pattern sizes for patterns to be formed in each consecutive two pattern transformation steps among the plurality of pattern transformation steps based on a possible total amount of in-plane size variation of the patterns to be formed in the consecutive two pattern transformation steps.

Abstract: Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.

Abstract: A lifting-off method and a manufacturing method for a thin film transistor (TFT) array substrate using the same are provided. A lifting-off method comprises forming a cavitation jet flow by using a lifting-off solution, and impacting a to-be-lifted-off surface of a substrate by means of the cavitation jet flow to remove a photoresist and a film deposited on the photoresist over the to-be-lifted-off surface. The disclosure may be applied to manufacturing processes for semiconductor devices or TFT array substrate.

Abstract: The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.

Abstract: Electronic devices can be prepared by forming a patterned thin film on a suitable receiver substrate. A cyanoacrylate polymer is used as a deposition inhibitor material and applied first as a deposition inhibitor material. The deposition inhibitor material can be patterned to provide selected areas on the receiver substrate where the deposition inhibitor is absent. An inorganic thin film is then deposited on the receiver substrate using a chemical vapor deposition technique only in those areas where the deposition inhibitor material is absent. The cyanoacrylate polymer deposition inhibitor material can be applied by thermal transfer from a donor element to a receiver substrate before a patterned thin film is formed.

Abstract: A composite structure comprising a high tenacity fiber coated by a matrix resin is provided. The matrix resin has elongation at break of at least about 100% and tensile strength at break of less than about 50 Mpa. The composite structure can further comprise an impact-absorbing elastomeric filler integrated into the matrix resin. Also provided is a method for making a composite structure. The method includes providing a high tenacity fiber; providing a matrix resin with elongation at break of at least about 100% and tensile strength at break of less than about 50 Mpa; and coating the high tenacity fiber with the matrix resin. The method can further comprise adding an impact-absorbing elastomeric filler into the matrix resin.

Abstract: Provided are a glass powder represented as aLi2O-bK2O-cBaO-dB2O3-eSiO2wherein a+b+c+d+e=1, and 0.01?a?0.1, 0.01?b?0.1, 0.01?c?0.1, 0.05?d?0.3, and 0.3?e?0.7 are satisfied in terms of mol %, a method of manufacturing the same, and a multi-layered ceramic material using the same. Therefore, a nano glass powder having an average particle size of 100nm or less and uniform particle size distribution can be manufactured using liquid phase deposition, specifically, a sol-gel method. In addition, the glass powder can be used as sintering additives to decrease a sintering temperature by about 100° C. in comparison with conventional glass upon manufacture of a ceramic material such as MLCC and MLCI, which can be sintered at a low temperature, contributing to improvement of dielectric capacity and inductance capacity of the parts and increasing quality coefficient.

Abstract: A cement free refractory mixture contains aluminum oxide, silicon carbide, fumed silica, aluminum metal, an anti-oxidant, reactive alumina, and a carbon-bearing material. The mixture can be formed by conventional techniques to create refractory articles to contain or direct the flow of liquid metals. Refractory articles formed by the mixture do not require firing to achieve an initial cure.

Abstract: The invention provides a fused cast refractory product having the following mean chemical composition by weight, as a percentage by weight based on the oxides: 25%<MgO<30%; 70%<Al2O3<75%; other species: <1%. The invention is applicable to a regenerator associated with a soda-lime glass fusion furnace operating under reducing conditions.

Abstract: A Ca—La—F based transparent ceramic, including: mixing CaF2 particles and LaF3 particles that are prepared separately from the CaF2 particles to form a mixed body of particles, and sintering the mixed body of particles and making the mixed body transparent, thereby producing a transparent ceramic.

Abstract: Hollow conjugated polyelectrolyte (HCPE) microcapsules contain at least one conjugated polyelectrolyte and at least one other polyelectrolyte of complementary charge and the microcapsule has a hollow core. The conjugated polyelectrolyte is a polymer with a multiplicity of charged repeating units where a portion of the charged repeating units form a pi-conjugated sequence. The complementary polyelectrolyte is a polymer with a complementary charged repeating unit to the charged repeating units of the conjugated polyelectrolyte. The HCPE microcapsules can be formed by successively coating a sacrificial core with alternating layers of complementary polyelectrolytes, at least one of which is a conjugated polyelectrolyte. The sacrificial core can be removed to form the hollow center of a HCPE microcapsule.

Abstract: The present invention relates to new processes for regenerating oxidized interstitial metal hydride containing catalysts prior to the use of such catalysts in a hydroprocessing process. Interstitial metal hydride containing catalysts are easily oxidized in the environment and once oxidized, the hydroprocessing activity of the interstitial metal hydrides is most often severely diminished and this lost activity due to oxidization of the iMeH is not susceptible to recovery under hydroprocessing conditions. As a result, these catalysts in the present art require considerable special handling in inert environments all through processes from fabrication, shipping, loading, use, and maintenance of the catalyst systems to protect the activity of the interstitial metal hydride components.

Abstract: Systems and methods for regenerating a spent catalyst are provided. The method can include heating a hydrocarbon and a coke precursor in the presence of catalyst particles to provide a cracked hydrocarbon product and coked catalyst particles. The cracked hydrocarbon product and the coked catalyst particles can be selectively separated to provide a hydrocarbon product and coked catalyst particles. The coked catalyst particles can be mixed with a carrier fluid to provide a mixture. The mixture can be introduced to an upper surface of a dense phase catalyst zone disposed within a regenerator. A gas can be introduced to a lower zone of the dense phase catalyst zone. At least a portion of the carbon deposited on the coked catalyst particles can be combusted to provide a flue gas, heat, and a regenerated catalyst.

Abstract: Systems and methods for regenerating a spent catalyst are provided. The method can include mixing a spent catalyst with a carrier fluid to provide a mixture. The spent catalyst can include carbon deposited on at least a portion thereof. The carrier fluid can include an oxygen containing gas. The mixture can be introduced to or above an upper surface of a dense phase catalyst zone disposed within a regenerator. A gas can be introduced to a lower zone of the dense phase catalyst zone. At least a portion of the carbon deposited on the catalyst can be combusted to provide a flue gas, heat, and a regenerated catalyst.

Abstract: A method for forming a coating on an ionic liquid includes placing an ionic liquid on a surface of a substrate, thereby forming an ionic liquid coated substrate. The ionic liquid coated substrate is introduced into a physical deposition chamber having a physical deposition target. One or more materials are directed from the physical deposition target onto the ionic liquid of the ionic liquid coated substrate by physical vapor deposition to form a coating on the ionic liquid of the ionic liquid coated substrate.

Abstract: Catalyst compositions for use in forming polyurethane products include a gelling catalyst, a trimerization catalyst, and a cure accelerator. The gelling catalyst is a tertiary amine, mono(tertiary amino) urea, bis(tertiary amino) urea, or a combination of any of these. Any known trimerization catalyst may be used. The cure accelerator may be a diol having at least one primary hydroxyl group, and having from five to 17 chain backbone atoms chosen from carbon, oxygen, or both between the hydroxyl groups, provided that at least five of the backbone atoms are carbon. Alternatively or in addition, the cure accelerator may be a polyol having three or more hydroxyl groups, at least two of which are primary, and having molecular weights between 90 g/mole and 400 g/mole. Delayed initiation of the polyurethane-forming reaction and/or reduced demold time for producing the polyurethane part can be obtained by using these catalyst compositions.

Abstract: A method of making a high activity catalyst composition suitable for use in the hydrodesulfurization of a middle distillate feed, such as diesel fuel, having a high concentration of sulfur, to thereby provide a low sulfur middle distillate product. The method comprises heat treating aluminum hydroxide under controlled temperature conditions thereby converting the aluminum hydroxide to gamma-alumina to give a converted aluminum hydroxide, and controlling the fraction of converted aluminum hydroxide that is gamma-alumina. A catalytic component is incorporated into the converted aluminum hydroxide to provide an intermediate, which is heat treated to provide the high activity catalyst composition. The high activity catalyst composition can suitably be used in the hydrodesulfurization of a middle distillate feed containing a high sulfur concentration.

Abstract: Iron- and manganese-containing heterogeneous catalyst, and a process for producing it, including the following steps: thermal decomposition of gaseous iron pentacarbonyl to give carbonyl iron powder having spherical primary particles; treatment of carbonyl iron powder with hydrogen, resulting in the metallic spherical primary particles at least partly agglomerating; surface oxidation of the iron particles to form iron oxide; contacting the particles with an aqueous solution of a manganese compound; drying in the presence of oxygen and subsequent calcination in the absence of oxygen, resulting in oxygen-comprising manganese compounds on the particles; and finally reaction of these with the iron oxide to form a mixed oxide of the formula MnxFe3-xO4, where 0<x?2. Process for preparing olefins by reacting carbon monoxide with hydrogen in the presence of a catalyst, wherein the abovementioned iron- and manganese-comprising heterogeneous catalyst is used as catalyst.

Abstract: A catalyst for hydrotreating and/or hydroconverting heavy metal-containing hydrocarbon feeds, comprises a support in the form of mainly irregular and non-spherical alumina-based agglomerates the specific shape. The catalyst is prepared by a specific order of steps: crushing, calcining, acidic autoclaving, drying, further calcining and impregnation with catalytic metals.

Abstract: The invention relates to catalytically active components for thermal ionization detectors for the detection of compounds containing halogen which have an improved structure as well as to a manufacturing method for an oxide ceramic sintering material for the components. It is the object of the invention to manufacture catalytically active components for thermal ionization detectors for gas chromatographic applications which are thermally, mechanically and chemically stable in the long term and which have increased sensitivity to the materials to be detected. In this respect, the sintering material should be adjustable in a controllable manner in the ideal parameter required for the detector. It is proposed in accordance with the invention to use an oxide ceramic sintering material for the components which comprises a crystalline phase and an amorphous glass phase, with it being essential to the invention that the amorphous glass phase is formed with 0.1 to 20% by weight of a cesium compound.

Abstract: A producing method includes a preparing step of preparing a chemical compound having at least one of elements of alkali metals and alkali earth metals along with platinum, and a reducing step of reducing the prepared chemical compound with a reducing agent to form platinum nanoparticles.

Abstract: Use of physical vapor deposition methodologies to deposit nanoscale gold on activating support media makes the use of catalytically active gold dramatically easier and opens the door to significant improvements associated with developing, making, and using gold-based, catalytic systems. The present invention, therefore, relates to novel features, ingredients, and formulations of gold-based, heterogeneous catalyst systems generally comprising nanoscale gold deposited onto a nanoporous support.

Abstract: The present invention provides a supported reactant for in situ remediation of soil and/or groundwater contaminated with a halogenated hydrocarbon consisting essentially of an adsorbent impregnated with zero valent iron, wherein the adsorbent is capable of adsorbing the halogenated hydrocarbon. In one embodiment, the adsorbent is activated carbon.

Abstract: The present invention relates to a process for preparing an aqueous suspension of an organic pesticide compound, which has a solubility in water of not more than 2 g/l at 20° C. and a melting point of not more than 110° C. and which is capable of forming at least one crystalline modification, wherein the organic pesticide compound is present in the form of essentially crystalline particles, which process comprises: a) providing an aqueous emulsion of the organic pesticide compound, wherein the organic pesticide compound is present in the form droplets of an amorphous form of the organic pesticide compound, and b) addition of an aqueous suspension of said organic pesticide compound, wherein the organic pesticide compound is present in the form of essentially crystalline particles, wherein the addition in step b) is performed at a temperature below the melting temperature of the crystalline form of the organic pesticide compound.

Abstract: Compounds of the formula (I) in which the substituents are as defined in claim 1 are suitable for use as microbiocides. Formula (I), wherein X is oxygen or sulfur; A is a 5- or 6-membered heterocyclic ring containing one to three heteroatoms, each independently selected from oxygen, nitrogen and sulphur, or a phenyl ring; the heterocyclic ring or the phenyl being substituted by the groups R6, R7 and R8; R6, R7 and R8 are each, independently, hydrogen, halogen, cyano, nitro, C1-4 alky, C1-4 halogenalkyl, C1-4 halogenalkoxy, C1-4 alkoxy(C1-4)alkyl or C1-4halogenalkoxy(C1-4)alkyl, provided that at least one of R6, R7 and R8 is not hydrogen; B is a phenyl, naphthyl or quinolinyl group, which is substituted by one or more substituents R9.

Abstract: The invention relates to a zinc finger polypeptide library in which each polypeptide comprises more than one zinc finger which has been at least partially randomized, and to a set of zinc finger polypeptide libraries which encode overlapping zinc finger polypeptides, each polypeptide comprising more than one zinc finger which has been at least partially randomized, and which polypeptide may be assembled after selection to form a multifinger zinc finger polypeptide.

Abstract: Disclosed and claimed is a composition and method of inhibiting the formation of hydrate agglomerates in a fluid comprising water, gas, and optionally liquid hydrocarbon comprising adding to the fluid an effective anti-agglomerant amount of the following formula and optionally salts thereof: wherein each R1 is independently absent, C1-C10 alkyl, benzyl, or H; wherein R2 is C1-C10 alkyl; wherein R3 C1-C10 alkyl; and wherein R4 is C4-C22 alkyl or alkenyl.

Abstract: A subterranean treatment additive comprising a viscoelastic surfactant and an amphiphilic polymer. Wherein the amphiphilic polymer comprises a hydrophobic component, and a hydrophilic component, the hydrophilic component itself comprising at least 15 monomer units. The subterranean treatment additive may be used as part of a treatment fluid with an aqueous base fluid that may be a brine.

Abstract: A corrosion inhibitor composition and method of inhibiting corrosion on a surface in an oil or gas application is disclosed and claimed. The corrosion inhibitor includes at least one fatty acid; at least one alkanolamine; at least one alkylamine; and at least one organic sulfonic acid. The method of inhibiting corrosion includes on a surface in an oil or gas application comprises contacting an effective dosage of the corrosion inhibitor with the surface.

Abstract: Fire resistant lubricating grease compositions resistant to self ignition and/or capable of self extinguishment when contacted with surfaces having temperatures of up to 900° C. are disclosed. The invention provides for grease compositions comprising (1) base oil (which can be mineral, vegetable, synthetic or combinations thereof), (2) at least one grease thickener (selected from calcium sulfonates or lithium-based soaps), and (3) water as major components. The invention also provides a method for the preparation of the grease composition and a method for lubrication of bearings, gears, surfaces and other lubricated components comprising use of the grease composition of the present invention. The grease compositions of this invention display excellent fire resistance properties and still have outstanding physical and performance characteristics for applications where temperatures and loads are high, shock loading is significant and in the presence of significant amounts of water.

Abstract: The present invention provides overbased detergents as lubricating oil additives effective for the lubrication of mechanical components in land and marine engines, such as, for example, hydraulic systems, transmissions, two-stroke and four-stroke vehicular engines, trunk piston and two-stroke crosshead marine engines. These overbased detergents lead to improved detergency and thermal stability performances versus high overbased sulfonates. Moreover, they are more compatible with commercial phenates than conventional sulfonates.

Abstract: The present disclosure relates to a non-acidic, sulfur-containing, phosphorus-containing compound of the formula I where R1, R2, R3, R4, R5, R6, and R7 are as defined herein. Such a compound may exhibit improved antiwear performance and thermal stability in lubricating compositions.

Abstract: The deposit formation resistance performance of turbine oils containing amine antioxidants and antiwear additives is enhanced beyond the level of that of turbine oils containing tricresyl phosphate antiwear additive by employing as the antiwear additive a 4,4?-(Isopropylidenediphenyl)bis(diphenyl phosphate).

Abstract: Provided are a polymer which, when wetted, enables a medical apparatus for use in MRI diagnosis and therapy to be easily visible under MRI and, simultaneously, develops surface lubricity, and a medical apparatus coated with the polymer. The polymer including a copolymer composed of a substance for shortening relaxation time of a nuclear species capable of being detected by magnetic resonance, a moiety having a reactive group, and a moiety for developing lubricity is used to coat the medical apparatus, whereby excellent peel resistance, high lubricity, visibility under magnetic resonance, easy applicability, and high safety can be obtained.

Abstract: Provided is an ethylene copolymer having 40 wt. % to 70 wt. % of units derived from ethylene and at least 30 wt. % of units derived from at least one ?-olefin having 3 to 20 carbon atoms and has the following properties: (a) a weight-average molecular weight (Mw), as measured by GPC, in the range of about 50,000 to about 200,000 g/mol; (b) a melting point (Tm) in ° C., as measured by DSC, that satisfies the relation: Tm>3.4×E?180 where E is the weight % of units derived from ethylene in the copolymer; (c) a ratio of Mw/Mn of about 1.8 to about 2.5; (d) a content of Group 4 metals of no more than 5 ppm; and (e) a ratio of wt ppm Group 4 metals/wt ppm Group 5 metals of at least 3. Also provided are methods for making an ethylene copolymer and compositions comprising an ethylene copolymer.

Abstract: An aqueous composition comprising: (a) an acyl isethionate of formula (I): wherein R1 is an alkyl or alkenyl group having from (7) to (21) carbon atoms and M+ a cation; and (b) an amphoteric, betaine or sultaine surfactant; wherein the weight ratio of component (a) to component (b) is more than 3:1.

Abstract: A millable solid soap. The millable solid soap contains a solid phase soap base and hydrogel phase particles dispersed in said soap base. The hydrogel phase particles act as fillers to render a low total fatty matter solid soap.

Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.