Abstract: A method is disclosed, in at least one embodiment, for producing a scintillator for a radiation detector, in which the scintillator is produced in layers by depositing a scintillator material using a PVD process. By using a PVD process, owing to lower process temperatures of less than 300° C., it is possible to produce scintillators with decay times of less than 1.1 ns over large surfaces. In this way, the prerequisites for quantitative and energy-selective detection of individual radiation quanta can be satisfied even with fluxes of more than 108 X-ray quanta/mm2*s. At least one embodiment of the invention also relates to a scintillator produced by such a method.

Abstract: A scintillator crystal to be used for a radiation detector such as X-ray CT apparatus has a unidirectional phase-separated structure and provides a light guiding function without forming partitions to prevent any crosstalk. The scintillator crystal comprises a phase-separated structure including a plurality of first crystal phases of the columnar crystals with unidirectionality and a second crystal phase covering lateral surfaces of the first crystal phases. At least the second crystal phase comprises CuI and emits light when excited by radiation.

Abstract: A method is disclosed for determining radiation attenuation as a result of an object in a positron emission tomography scanner. In at least one embodiment, a phantom object is arranged in the positron emission tomography scanner during the method. First raw radiation data of the phantom object is acquired while the object is not arranged in the positron emission tomography scanner. A first image of the phantom object is calculated from the first raw radiation data. The object then is arranged in the positron emission tomography scanner (2) and preliminary radiation attenuation of the object is identified. Second raw radiation data of the phantom object is acquired while the object is arranged in the positron emission tomography scanner. A second image of the phantom object is calculated from the second raw radiation data taking into account the preliminary radiation attenuation. The radiation attenuation is determined on the basis of the first image and the second image.

Abstract: A radiographic image imaging device is provided. The device includes: an acquisition component that acquires battery remaining power amount information representing an amount of power remaining in a battery, which is incorporated in a portable radiographic image imaging device and supplies power to the portable radiographic image imaging device, the portable radiographic image imaging device detecting radiation irradiated at a subject of imaging and generating a radiographic image; a calculation component that calculates a possible standby duration of the portable radiographic image imaging device on the basis of the battery remaining power amount information acquired by the acquisition component and a number of images of the portable radiographic image imaging device; and a display component that displays the number of images and the possible standby duration.

Abstract: A radiation image pickup device includes: an image pickup section having a plurality of pixels and generating an electric signal according to incident radiation, the plurality of pixels each including a photoelectric conversion element and one or a plurality of transistors of a predetermined amplifier circuit; and a correction section subjecting signal data of the electric signal obtained in the image pickup section to predetermined correction process. The correction section makes a comparison between measurement data obtained by measuring an input-output characteristic of the amplifier circuit in each of the plurality of pixels and initial data on the input-output characteristic, and performs the correction process by the pixel individually, by using a result of the comparison.

Abstract: Apparatus for detecting the presence of a flame using a UV tube which can be supplied with a DC voltage via an operating resistor, at least two UV tubes which are arranged in this manner and have substantially the same field of vision being provided, and the two UV tubes being able to be switched on and off in succession with a gap of a predefined time within a predetermined interval of time via a controller, with the result that the UV tubes are switched on for a predeterminable period of time, the number of pulses obtained from each UV tube being able to be recorded and compared with one another, the anode of the respective UV tube being able to be connected to earth potential between the operations of switching the UV tubes off and on in order to draw ionization in the discharge area.

Abstract: An imaging apparatus configured to output an imaging enabling signal in response to an imaging instruction includes an imaging unit, a control unit configured to cause the imaging unit to repeatedly perform initialization driving for reading an accumulated electrical signal, and a determination unit configured to determine whether to start new initialization driving before the imaging enabling signal is output, according to an elapsed time from completion of the last initialization driving to the time of receipt of the imaging instruction.

Abstract: A method and apparatus for pulse pile-up rejection are disclosed. The apparatus comprises a delay value application constituent configured to receive a threshold-crossing time value, and provide an adjustable value according to a delay value and the threshold-crossing time value; and a comparison constituent configured to receive a peak-occurrence time value and the adjustable value, compare the peak-occurrence time value with the adjustable value, indicate pulse acceptance if the peak-occurrence time value is less than or equal to the adjustable value, and indicate pulse rejection if the peak-occurrence time value is greater than the adjustable value.

Abstract: A charged particle system such as a multi beam lithography system. A manipulator device manipulates one or more charged particle beams. The manipulator device includes at least one through opening in the plane of the planar substrate for passing at least one charged particle. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of the through opening and in a second set of multiple second electrodes along a second part of the perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.

Abstract: The present invention provides a drawing apparatus including a plurality of drawing units each of which is configured to perform drawing on a substrate with a charged particle beam, a plurality of first processors configured to be selectively connectable to each of the plurality of drawing units, an information processor configured to determine, from the plurality of first processors, a first processor to be connected to a first drawing unit among the plurality of drawing units, based on drawing data, and a connection unit configured to connect the determined first processor to the first drawing unit.

Abstract: In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap, a particle optics configured for separating the signal beam in a first portion of the signal beam and in at least one second portion of the signal beam, configured for focusing the first portion of the signal beam, and configured for deflecting and focusing the at least one second portion of the signal beam, wherein the particle optics includes a first electrode and at least one second electrode. Therein, the first electrode is an inner electrode and the at least one second electrode is provided radially outward of the first electrode.

Abstract: Provided is an ion generating device for an air-conditioner duct, which can be easily attached to the inside of an existing air conditioner duct and can ensure a desired ion generation quantity. The ion generating elements of the sub-units (3, 4, 5) of the ion generating device are connected to the drive circuit of the ion generating device main unit (2), and are driven by the drive circuit.

Abstract: This invention provides a method of mounting cylindrical electrodes in the geometry of a miniature electrostatic quadrupole, which can act as a quadrupole mass filter or a quadrupole ion guide, or be used in a linear quadrupole ion trap. The electrodes are mounted in pairs on microfabricated supports, which are formed from conducting parts on an insulating substrate. The supports include a suspended flexure system to relieve strains caused by mismatch between the thermal expansion coefficients of the electrodes and the substrate. A complete quadrupole is constructed from two such supports, which are spaced apart by further conducting spacers.

Abstract: An electron beam sterilizer has a bottle holder 28 provided with a rotation shaft 38, a neck gripper 70 mounted to a lower end of the rotation shaft 38, a rotating body 30 for rotating and moving the neck gripper 70 and a rotator revolver (segment gear 54, pinion gear 46, disc-shaped cam 66, etc.), and while conveying the resin bottle 2 in the state of being held, the resin bottle 2 is sterilized by irradiation with the electron beam through the irradiation window 19 of the electron beam irradiation device 18. The entire surface of the resin bottle 2 is completely sterilized by being rotated by the rotator during the movement in front of the irradiation window 19 and, thereafter, the rotator is inverted in position to return the neck gripper to thereby discharge the bottle.

Abstract: A light source apparatus for fluorescence photography of biomolecule sample gels is disclosed. The light source apparatus comprises a housing, a transparent plate disposed in a light transmission zone at the top of the housing, and at least one LED array disposed in the housing out of the range of the light transmission zone. The LED array irradiates obliquely to the light transmission zone for preventing the light spots from interfering in the observation. Each of LED array may comprises different colors of LEDs for different biomolecule samples.

Abstract: The present invention relates to detection systems and methods that detect fluorescence, luminescence, chemiluminescence or phosphorescence signatures in the form of an electrical signal conducted and emitted from metallic containing surfaces. Thus, the present invention provides for detecting fluorescence digitally and directly without the need for expensive detectors.

Abstract: A fluorescence life measuring apparatus, a fluorescence life measuring method and a program are described that can obtain fluorescence life using a simple configuration. The apparatus moves a stage on which a fluorescent material to be measured is placed, irradiates with excitation light the fluorescent material placed on the stage moved at a constant speed, images afterglow of emitted fluorescence caused by the excitation light, and uses an imaged image to detect the elapsed time from a fluorescence position and afterglow strength at a target afterglow position and calculate the fluorescence life.

Abstract: Substrates, systems and methods for analyzing materials that include waveguide arrays disposed upon or within the substrate such that evanescent fields emanating from the waveguides illuminate materials disposed upon or proximal to the surface of the substrate, permitting analysis of such materials. The substrates, systems and methods are used in a variety of analytical operations, including, inter alia, nucleic acid analysis, including hybridization and sequencing analyses, cellular analyses and other molecular analyses.

Abstract: A detection system combining an excitation radiation source providing excitation radiation to an analysis region of a sample within a substrate having a detection surface, a detector for detecting radiation collected from the analysis region comprising the detection surface of the sample resulting from the excitation, and a magnet arrangement beneath the analysis region of the sample, and stationary with respect to the excitation radiation source and light coupling arrangement, for attracting magnetic beads within the sample to the substrate surface. The detection radiation is collected from the detection surface of the substrate to give an enhanced surface specificity.

Abstract: A system for energy upconversion and/or down conversion and a system for producing a photostimulated reaction in a medium. These systems include 1) a nanoparticle configured, upon exposure to a first wavelength ?1 of radiation, to generate a second wavelength ?2 of radiation having a higher energy than the first wavelength ?1 and 2) a metallic structure disposed in relation to the nanoparticle. A physical characteristic of the metallic structure is set to a value where a surface plasmon resonance in the metallic structure resonates at a frequency which provides a spectral overlap with either the first wavelength ?1 or the second wavelength ?2, or with both ?1 and ?2. The system for producing a photostimulated reaction in a medium includes a receptor disposed in the medium in proximity to the nanoparticle which, upon activation by the second wavelength ?2, generates the photostimulated reaction.

Abstract: Devices and methods for screening emissive properties of a cell, such as the resistance to photobleaching or other photophysical property. In one example, a device may include a microfluidic reservoir having at least an input channel for receiving the cell, a main channel fluidly coupled with the input channel, at least a first output channel and a second output channel, the first and second output channels fluidly coupled with the main channel; and a multibeam interrogation section generating a plurality of light beams impinging upon the main channel of the microfluidic reservoir. As a cell passes from the input channel through the main channel of the microfluidic reservoir, the cell is exposed to the plurality of light beams thereby generating emissions that are received by a signal processing section. A cell trapping section selectively diverts the cell to the second output channel if the cell contains desired emissive properties.

Abstract: The test elements are provided that are adapted to detect at least one analyte in a sample. At least some of the test elements are provided with a defect marking which contains information about defectiveness of the test elements. The test elements include at least one radiation-sensitive material. The test elements are exposed to at least one radiation, the radiation being adapted to induce marking in the form of at least one optically detectable change in the radiation-sensitive material.

Abstract: A storage phosphor screen including a substrate; a phosphor layer disposed over the substrate; and an overcoat layer disposed over the phosphor layer, wherein the overcoat layer comprises at least one organic solvent-soluble polymer and at least one light absorbing colorant, and wherein the light absorbing colorant is dispersed within the organic solvent-soluble polymer. Also disclosed is a method of preparing a storage phosphor screen including providing a substrate; providing a phosphor solution comprising a solvent, at least one stimulable phosphor, and a binder; providing an overcoat solution comprising a solvent, at least one organic solvent-soluble polymer and at least one light absorbing colorant; forming a phosphor layer over a surface of the substrate with the phosphor solution; and forming an overcoat layer over the phosphor layer with the overcoat solution, wherein the light absorbing colorant is dispersed within the overcoat layer.

Abstract: One embodiment disclosed relates to an apparatus forming an electrical conduction path through an insulating layer on a surface of a substrate. A first radiation source is configured to emit radiation to a first region of the insulating layer, and a first electrical contact is configured to apply a first bias voltage to the first region. A second radiation source is configured to emit radiation to a second region of the insulating layer, and a second electrical contact is configured to apply a second bias voltage to the second region. The conductivities of the regions are increased by the radiation such that conductive paths are formed through the insulating layer at those regions. In one implementation, the apparatus may be used in an electron beam instrument. Another embodiment relates to a method of forming an electrical conduction path through an insulating layer. Other embodiments, aspects and features are also disclosed.

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract: A lithography apparatus includes a first measurement device which measures a position of a mark on a substrate with light, a second measurement device which measures a position of a reference mark on a stage with a charged-particle, a detector which detects the position of the stage in a first direction parallel to the axis of a projection system and a second direction perpendicular to this axis, and a controller. The controller determines a charged-particle beam, in which the angle, with respect to the first direction, at which it is incident on the reference mark falls within a tolerance, and obtains a baseline for the first measurement device from the position of the reference mark measured by the second measurement device using the determined charged-particle beam and the position of the reference mark measured by the first measurement device.

Abstract: A charged-particle beam exposure apparatus which includes a deflector that deflects a charged-particle beam, and a stage mechanism that drives a substrate, and draws a pattern on the substrate while scanning the charged-particle beam in a main-scanning direction by the deflector and scanning the substrate in a sub-scanning direction by the stage mechanism. The apparatus includes a blanker unit configured to control irradiation and unirradiation of the substrate with the charged-particle beam, and a controller configured to control the deflector to deflect the charged-particle beam in the sub-scanning direction by an amount of driving of the substrate in the sub-scanning direction by the stage mechanism during a period of time from stop of drawing on the substrate until restart thereof when the drawing on the substrate is stopped and then restarted while the substrate is driven in the sub-scanning direction by the stage mechanism.

Abstract: An object of the present invention is to provide a pattern measuring apparatus which performs high-accuracy concavity/convexity determination (e.g., distinguishing between a line segment and space) while simultaneously reducing the dose of a beam falling onto a pattern to be measured. To attain the object, this invention proposes a pattern measuring apparatus which specifies a pattern in a measurement object area by scanning a tilted bean with respect to another area different from the measurement object area and then performs measurement based on the pattern-specifying result. With such arrangement, it becomes possible to perform measurement without the risk of wrong pattern designation while lowering the dose of a beam hitting the measurement object area.

Abstract: A method for forming a solid immersion lens (SIL) includes generating a focused ion beam, and projecting the focused ion beam onto an optical medium at locations defined by a binary bitmap milling pattern, wherein the locations at which the focused ion beam impact a surface of the optical medium are randomized over successive raster scans of the surface of the optical medium to form at least a portion of a hemispherical structure in the optical medium.

Abstract: An energy degrader includes: an attenuation member that attenuates energy of entering charged particles to a different amount of energy according to an incident position of the charged particles; an energy adjustment drive unit that drives the attenuation member in a first axial direction in order to change the incident position of the charged particles; and a beam diameter adjustment drive unit that drives the attenuation member in a second axial direction different from the first axial direction in order to adjust the beam diameter of the charged particles.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: A compact high-gradient, very high energy electron (VHEE) accelerator and delivery system (and related processes) capable of treating patients from multiple beam directions with great speed, using all-electromagnetic or radiofrequency deflection steering is provided, that can deliver an entire dose or fraction of high-dose radiation therapy sufficiently fast to freeze physiologic motion, yet with a better degree of dose conformity or sculpting than conventional photon therapy. In addition to the unique physical advantages of extremely rapid radiation delivery, there may also be radiobiological advantages in terms of greater tumor or other target control efficacy for the same physical radiation dose.

Abstract: A system for disinfecting contaminated water having, in one embodiment, a vessel for contaminated water having an inlet and an outlet. An elongate housing is disposed generally vertically in the vessel, the housing having a housing inlet and a housing outlet, the housing outlet being in open communication with the interior of the vessel. An elongate UV light assembly is disposed in the housing and divides at least a portion of the housing into first and second flow pathways, the second flow pathway being in open communication with the housing outlet. There is a flow inducer aiding flow of at least some of the contaminated water from the vessel, through the housing and out the housing outlet.

Abstract: On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

Abstract: A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The second phase change layer has a second average grain size different from the first average grain size.

Abstract: Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.

Abstract: Provided are a nonvolatile memory device which can suppress non-uniformity in initial breakdown voltages among nonvolatile memory elements and prevent reduction of yield, and a manufacturing method thereof. The nonvolatile memory device includes a nonvolatile memory element (108) having a stacked-layer structure in which a resistance variable layer (106) is parallel to a main surface of a substrate (117) and is planarized, and a plug (103) electrically connected to either a first electrode (105) or a second electrode (107), and an area of an end surface of a plug (103) at which the plug (103) and the nonvolatile memory element (108) are connected together, the end surface being parallel to the main surface of the substrate (117), is greater than a cross-sectional area of a cross-section of a first transition metal oxide layer (115) which is an electrically-conductive region, the cross-section being parallel to the main surface of the substrate (117).

Abstract: There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode.

Abstract: Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer.

Abstract: It is presented an organic LED device 101 with, when in use, a predetermined pattern on its light emitting parts. The organic LED device 101 comprises an anode 105, a cathode 103, and an organic light emitting layer 107. The organic light emitting layer 107 is configured to emit light, wherein the organic light emitting layer 107 comprises portion with reduced light emitting properties, the portions of the organic light emitting layer 107 having been irradiated by light with a wavelength in the absorption band of the organic light emitting layer 107, the light intensity being below an ablation threshold of the cathode layer 103, the anode layer 105 and the organic light emitting layer 107 of the organic LED device 101, reducing the light emitting properties of the irradiated portions of the organic light emitting layer 107. It is also presented a method for reducing the light emitting properties of the organic LED device 101.

Abstract: An object of the present invention is to provide a conjugated polymer which has a high hole transportability and is excellent in solubility and depositability. Another object of the present invention is to provide an organic electroluminescence element which is capable of low voltage driving and has a high luminous efficiency and drive stability. The conjugated polymer of the present invention is a conjugated polymer containing a specific structure as the repeating unit, where the conjugated polymer contains an insolubilizing group as a substituent, the weight average molecular weight (Mw) is 20,000 or more and the dispersity (Mw/Mn) is 2.40 or less.

Abstract: A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires which may be embedded in a matrix. The conductive layer is optically transparent and flexible. It can be coated or laminated onto a variety of substrates, including flexible and rigid substrates.

Abstract: A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.

Abstract: The present invention relates to the use of siloles substituted by fused ring systems in organic electronics applications, and to specific siloles substituted by fused ring systems and to the use thereof in organic electronics applications.

Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.

Abstract: A donor film that is easily handled in a process without adding a separate member (such as a tray) when an organic thin film is formed on a substrate by using a thermal transfer method is disclosed. In addition, a method of manufacturing the donor film and a method of manufacturing an organic light-emitting device using the donor film are disclosed. The donor film includes: a base film; a light-to-heat conversion (LTHC) layer on the base film; an interlayer on the LTHC layer and that includes a transfer region and a first protrusion corresponding to at least one edge of the LTHC layer; and a transfer layer on the interlayer and including an organic light-emitting material. A rigidity of the first protrusion is higher than a rigidity of the transfer region.

Abstract: A planarization film is formed as a silicon oxide monolayer using, for instance, a spin coat method, through, for example, applying a silicon-containing organic solvent to an upper portion of a TFT layer and planarizing an upper surface of a resist film made up of a silicon-containing organic solvent, heating a predetermined processing fluid, e.g., peroxymonosulfuric acid, and discharging the processing fluid heated to, for example, 150° C., onto the planarized upper surface of the resist film such that organic components of the resist film are dissolved while silicon in the resist film is oxidized by the processing fluid.

Abstract: A semiconductor device includes, in a first region over a semiconductor substrate, a first insulating layer, a first wiring, a second insulating layer, a third insulating layer, and a via and a second wiring embedded in the second insulating layer and the third insulating layer through a barrier metal, and includes, in a second region, the first insulating layer, a gate electrode, the second insulating layer, a semiconductor layer located, the third insulating layer, and a first electric conductor and a second electric conductor embedded in the third insulating layer so as to sandwich the gate electrode in a position overlapped with the semiconductor layer in a plan view through a barrier metal and coupled to the semiconductor layer through the barrier metal.