Polishes Patents (Class 106/3)
  • Patent number: 6638327
    Abstract: A method for repairing and lustering defects on a hydrophilic coat surface is reported. The method comprises the steps of applying a buffing composition on a hydrophilic coat surface; and buffing the hydrophilic coat surface to which the buffing composition has been applied. The buffing composition is an aqueous composition which comprises water and a water-soluble high-boiling-point liquid organic compound, and further comprises either a combination of abrasive particles and a dispersant, or lustering agent, or the both. The method allows for the removal of defects on a hydrophilic coat surface with good finish after repairing and without deteriorizing the antifouling function of the hydrophilic coat against urban fouling substances.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: October 28, 2003
    Assignee: 3M Innovative Properties Company
    Inventor: Fujio Hara
  • Patent number: 6638326
    Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.
    Type: Grant
    Filed: September 25, 2001
    Date of Patent: October 28, 2003
    Assignee: EKC Technology, Inc.
    Inventors: Robert J. Small, Maria Peterson, Tuan Truong, Melvin Keith Carter, Lily Yao
  • Publication number: 20030196386
    Abstract: The invention provides an aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices.
    Type: Application
    Filed: April 14, 2003
    Publication date: October 23, 2003
    Applicant: JSR CORPORATION
    Inventors: Masayuki Hattori, Michiaki Ando, Kazuo Nishimoto, Nobuo Kawahashi
  • Publication number: 20030194879
    Abstract: A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4.
    Type: Application
    Filed: January 25, 2002
    Publication date: October 16, 2003
    Inventors: Robert J. Small, Zhefei J. Chen
  • Patent number: 6632259
    Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.
    Type: Grant
    Filed: May 18, 2001
    Date of Patent: October 14, 2003
    Assignee: Rodel Holdings, Inc.
    Inventors: Barry Weinstein, Tirthankar Ghosh
  • Publication number: 20030182868
    Abstract: A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. This problem is solved by adding poly ammonium acrylates having different degrees of neutralization to one another as surfactants to a cerium oxide slurry containing cerium oxide particles, and suitably adjusting the total amount of polyacrylates added.
    Type: Application
    Filed: March 12, 2003
    Publication date: October 2, 2003
    Inventors: Haruki Nojo, Akitoshi Yoshida, Pascal Berar
  • Patent number: 6626967
    Abstract: A polishing composition comprising the following components (a) to (c): (a) colloidal silica; (b) at least one bicarbonate selected from the group consisting of ammonium bicarbonate, lithium bicarbonate, potassium bicarbonate, sodium bicarbonate and a mixture thereof; and (c) water; wherein the concentration of each of the elements included in Groups 2A, 3A, 4A, 5A, 6A, 7A, 8A, 1B and 2B, lanthanoid and actinoid, and the concentration of each element of aluminum, gallium, indium, thallium, tin, lead, bismuth, fluorine and chlorine, are at most 100 ppb in the polishing composition, respectively.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: September 30, 2003
    Assignee: Fujimi Incorporated
    Inventors: Shinichiro Takami, Katsuyoshi Ina
  • Patent number: 6626968
    Abstract: A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.
    Type: Grant
    Filed: May 21, 2001
    Date of Patent: September 30, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-rae Park, Jung-yup Kim, Bo-un Yoon, Kwang-bok Kim, Jae-phil Boo, Jong-won Lee, Sang-rok Hah, Kyung-hyun Kim, Chang-ki Hong
  • Patent number: 6623355
    Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.
    Type: Grant
    Filed: March 23, 2001
    Date of Patent: September 23, 2003
    Assignee: MiCell Technologies, Inc.
    Inventors: James B. McClain, Joseph M. DeSimone
  • Patent number: 6620216
    Abstract: A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.
    Type: Grant
    Filed: August 15, 2002
    Date of Patent: September 16, 2003
    Assignee: Kao Corporation
    Inventors: Yoshiaki Oshima, Toshiya Hagihara
  • Patent number: 6620037
    Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.
    Type: Grant
    Filed: May 14, 2002
    Date of Patent: September 16, 2003
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Slumin Wang
  • Patent number: 6620215
    Abstract: The present invention is drawn to a composition comprising abrasive particles comprising an organic resin for chemical mechanical planarization (CMP), which can be widely used in the semiconductor industry. The abrasive composition is an aqueous slurry comprising abrasive particles comprising an organic resin, wherein the slurry is held at a pH in the range of 2-12. An attractive feature of the inventive abrasive composition is that it can be tailored to selectively remove different components from the surface. The inventive abrasive composition also provides efficient polishing rates and good surface quality when used in CMP applications.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: September 16, 2003
    Assignee: Dynea Canada, Ltd.
    Inventors: Yuzhuo Li, Guomin Bian, Kwok Tang, Joe Zunzi Zhao, John Westbrook, Yong Lin, Leina Chan
  • Publication number: 20030167963
    Abstract: This invention relates to a furniture polish comprising a paraffin wax and a microcrystalline wax, preferably in combination wit beeswax and a silicon oil. An organic solvent and water are present, and there may additionally be a surfactant and, in aerosol can applications, a propellant. The polish gives good gloss without tendency to smearing and good resistance to water damage.
    Type: Application
    Filed: May 6, 2003
    Publication date: September 11, 2003
    Inventors: David Bedford, Jean Anne Braithwaite
  • Publication number: 20030168628
    Abstract: The invention provides a polishing composition comprising (a) a silica abrasive, (b) methanol, and (c) a liquid carrier, wherein the polishing composition has a pH of about 1 to about 6, and the polishing composition is colloidally stable. The invention also provides a method for polishing a substrate comprising a silicon-based dielectric layer using the polishing composition. The invention further provides a method of stabilizing a silica abrasive in a polishing composition by contacting the abrasive with methanol.
    Type: Application
    Filed: March 5, 2002
    Publication date: September 11, 2003
    Applicant: Cabot Microelectronics Corporation
    Inventor: Robert Vacassy
  • Patent number: 6616717
    Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: September 9, 2003
    Assignee: Rodel Holdings, Inc.
    Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
  • Patent number: 6616718
    Abstract: A two-part reagent method for polishing an inorganic silicate substrate is provided. The method comprises: providing a silicate substrate; providing a reagent comprising: a first part consisting essentially of an aqueous solution of at least one metal oxide abrasive selected from the group consisting of titania, zirconia, germania, and germania-doped silica; and a second part consisting essentially of an alkali aqueous solution of colloidal silica having a buffered pH value of at least about 10; polishing a surface of said substrate with the metal oxide abrasive aqueous solution to a surface roughness (Ra) ranging from about 6 Å to about 10 Å; and further polishing the surface with said alkali aqueous solution of colloidal silica to a roughness of less than or equal to about 5 Å.
    Type: Grant
    Filed: September 24, 2001
    Date of Patent: September 9, 2003
    Assignee: Corning Incorporated
    Inventors: Charles M. Darcangelo, Robert Sabia, Harrie J. Stevens
  • Publication number: 20030162398
    Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a catalyst. The catalyst comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the catalyst coated on the surface of the abrasive particles and the oxidizing agent, at the catalyst surface. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.
    Type: Application
    Filed: February 11, 2002
    Publication date: August 28, 2003
    Inventors: Robert J. Small, Brandon S. Scott
  • Patent number: 6610114
    Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: August 26, 2003
    Assignee: Honeywell International Inc.
    Inventors: Dan Towery, Neil Hendricks, Paul Schilling, Tian-An Chen
  • Publication number: 20030154659
    Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.
    Type: Application
    Filed: February 21, 2002
    Publication date: August 21, 2003
    Inventors: Haofeng Xu, John Quanci
  • Patent number: 6607571
    Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.
    Type: Grant
    Filed: August 21, 2002
    Date of Patent: August 19, 2003
    Assignees: Showa Denko K.K., Yamaguchi Seiken Kogyo K.K.
    Inventors: Ken Ishitobi, Masahiro Nozaki, Tadanori Nagao, Yoshiki Hayashi
  • Patent number: 6602117
    Abstract: A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a fixed-abrasive type polishing pad with a substantially abrasive-free slurry in which copper is removed at a rate that is substantially the same as or faster than a rate at which a material, such as tungsten, of the barrier layer is removed. The slurry is formulated so as to oxidize copper at substantially the same rate as or at a faster rate than a material of the barrier layer is oxidized. Thus, copper and the barrier layer material have substantially the same oxidation energies in the slurry or the oxidation energy of the barrier layer material in the slurry may be greater than that of copper. Systems for substantially polishing copper conductive structures and adjacent barrier structures on semiconductor device structures are also disclosed.
    Type: Grant
    Filed: August 30, 2000
    Date of Patent: August 5, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Dinesh Chopra, Nishant Sinha
  • Publication number: 20030143848
    Abstract: An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.
    Type: Application
    Filed: January 23, 2003
    Publication date: July 31, 2003
    Applicant: Cabot Microelectronics Corporation
    Inventors: J. Scott Steckenrider, Brian L. Mueller
  • Patent number: 6599837
    Abstract: The present invention provides a chemical mechanical planarization (CMP) polishing composition that polishes metal layers at a good removal rate and that provides good planarization of metal layers in a process that can be readily controlled. The CMP polishing composition of the present composition includes a plurality of abrasive particles, a triazole or a triazole derivative, a ferricyanide salt oxidizing agent and water and has a pH of from about 1 to about 6. In addition, the present invention includes a method for removing at least a portion of a metallization layer by polishing a metallization layer using the CMP polishing composition of the invention.
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: July 29, 2003
    Assignee: Agere Systems Guardian Corp.
    Inventors: Sailesh Mansinh Merchant, Sudhanshu Misra, Pradip Kumar Roy
  • Publication number: 20030136057
    Abstract: The present invention provides a novel polishing material with which silicon nitride ceramic and sialon ceramic can be polished at high efficiency through a tribochemical reaction, and a method for manufacturing thereof, said material is used for polishing a silicon nitride ceramic or sialon ceramic as a material being polished, through a tribochemical reaction, and consists of a ceramic sinter containing an element that causes the ceramic being polished to undergo a dissolution reaction at the grain boundary of the sinter, within the particles thereof, and/or in pores thereof.
    Type: Application
    Filed: November 13, 2002
    Publication date: July 24, 2003
    Applicant: National Inst. of Advanced Ind. Science and Tech.
    Inventors: Kiyoshi Hirao, Shuji Sakaguchi, Yukihiko Yamauchi, Shuzo Kanzaki, Takeshi Sato
  • Patent number: 6596042
    Abstract: The present invention provides a process for producing particles suitable for use as abrasives in chemical-mechanical polishing slurries. The process according to the invention includes adding a crystallization promoter such as Ti[OCH(CH3)2)]4 to an aqueous cerium salt solution, adjusting the pH of the solution to higher than 7.0 using one or more bases, and subjecting the solution to hydrothermal treatment at a temperature of from about 90° C. to about 500° C. to produce the particles.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: July 22, 2003
    Assignee: Ferro Corporation
    Inventors: Xiangdong Feng, Yie-Shein Her
  • Publication number: 20030131754
    Abstract: A self-shining aerosol-type shoe polish composition consisting essentially of 0.5 to 25% by volume of a silicone compound, optionally 3 to 25% by volume of a drying retardant and/or 0.1 to 1% by volume of an anti-static agent component, and the remainder of liquefied gas as a solvent as well as a propellant gas, exhibits excellent drying properties and self-shining effect when sprayed on the surface of shoes.
    Type: Application
    Filed: January 7, 2003
    Publication date: July 17, 2003
    Inventors: Soon-Ki Paik, Jeon-Woon Bae
  • Publication number: 20030131535
    Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.
    Type: Application
    Filed: September 25, 2001
    Publication date: July 17, 2003
    Inventors: Robert J. Small, Maria Peterson, Tuan Troung, Melvin Keith Carter, Lily Yao
  • Publication number: 20030124855
    Abstract: A method for buffering a chemical mechanical polish chemical slurry is disclosed. Buffering the slurry reduces buildup of local acidic areas at the interface between the polished metal and the polishing pad. Reduction of the local acidic areas improves the uniformity of the polish and an endpoint signal used to determine when to finish the polish operation.
    Type: Application
    Filed: January 2, 2002
    Publication date: July 3, 2003
    Inventors: Allen D. Feller, Kenneth C. Cadien
  • Publication number: 20030121214
    Abstract: A polishing composition for a substrate for a magnetic disk, which comprises:
    Type: Application
    Filed: November 26, 2002
    Publication date: July 3, 2003
    Applicant: FUJIMI INCORPORATED
    Inventor: Tomoaki Ishibashi
  • Patent number: 6585786
    Abstract: By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: July 1, 2003
    Assignees: NEC Electronics Corporation, Tokyo Magnetic Printing Co., Ltd.
    Inventors: Yasuaki Tsuchiya, Tomoko Wake, Tetsuyuki Itakura, Shin Sakurai, Kenichi Aoyagi
  • Publication number: 20030119655
    Abstract: Granules based on aluminium oxide having the characteristics: 1 Average grain diameter: 5.
    Type: Application
    Filed: August 6, 2002
    Publication date: June 26, 2003
    Applicant: Degussa AG
    Inventors: Juergen Meyer, Peter Neugebauer, Martin Steigerwald
  • Publication number: 20030115806
    Abstract: A polishing composition comprising the following components (a) to (c):
    Type: Application
    Filed: October 30, 2002
    Publication date: June 26, 2003
    Applicant: FUJIMI INCORPORATED
    Inventors: Shinichiro Takami, Katsuyoshi Ina
  • Publication number: 20030110710
    Abstract: A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.
    Type: Application
    Filed: August 15, 2002
    Publication date: June 19, 2003
    Inventors: Yoshiaki Oshima, Toshiya Hagihara
  • Publication number: 20030110711
    Abstract: For aluminum disks and glass-made hard disks, those disks having a mean waviness of less than 3 Å are being desired in order to increase the density of memory capacity. The present invention provides polishing compositions that can give smoothly polished surfaces for the disks.
    Type: Application
    Filed: October 28, 2002
    Publication date: June 19, 2003
    Applicant: Nissan Chemical Industries, Ltd.
    Inventors: Isao Ota, Tohru Nishimura, Gen Yamada
  • Patent number: 6579923
    Abstract: An aqueous polishing composition comprising a film forming polymer and an ionic silicone surfactant is described. The polish can be applied to a variety of substrates, particularly to floor surfaces. The coatings are smooth and soil resistant. The polish composition performs as well as state-of-the-art formulations containing a fluorocarbon surfactant.
    Type: Grant
    Filed: February 5, 2001
    Date of Patent: June 17, 2003
    Assignee: 3M Innovative Properties Company
    Inventors: Susan K. Yarmey, Adriana Paiva, Augustine C. Liu, Jimmie R. Baran, Jr.
  • Patent number: 6568997
    Abstract: This invention is directed to a polishing composition used for the chemical mechanical polishing of semiconductor wafers having a copper metal circuit. The composition has a pH of under 5.0 and comprises the following: (a) a water soluble carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers; (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of organic polymer particles, wherein the polymer of the organic polymer particles has a number average molecular weight of at least 500,000 determined by GPC (gel permeation chromatography) and a Tg (glass transition temperature) of at least 25° C.
    Type: Grant
    Filed: April 5, 2001
    Date of Patent: May 27, 2003
    Assignee: Rodel Holdings, Inc.
    Inventors: Wesley D. Costas, Craig D. Lack, Daniel A. Saucy
  • Patent number: 6569216
    Abstract: A polishing composition comprising a chelating compound or a salt thereof; a partially esterified product and/or partially etherified product of a polyhydric alcohol compound; and water; a polishing composition comprising water, an abrasive, an intermediate alumina, and a chelating compound or a salt thereof, wherein the content of the intermediate alumina is from 1 to 50 parts by weight, based on 100 parts by weight of the abrasive; and a polishing composition comprising water, an abrasive, an intermediate alumina, a chelating compound or a salt thereof, and a partially esterified product and/or partially etherified product of a polyhydric alcohol compound, wherein the content of the intermediate alumina is from 1 to 50 parts by weight, based on 100 parts by weight of the abrasive. By using the polishing composition, the polishing rate can be increased, and the surface roughness can be lowered, without causing defects such as scratches and pits on the surface of an object to be polished.
    Type: Grant
    Filed: May 25, 2001
    Date of Patent: May 27, 2003
    Assignee: Kao Corporation
    Inventors: Koji Taira, Shigeo Fujii, Yoshiaki Oshima, Koichi Naito
  • Patent number: 6569215
    Abstract: An object of the present invention is to provide a composition for polishing a magnetic disk substrate that is used as a storage device for a computer or the like, and is capable of producing a magnetic disk substrate polished with high precision suitable for use in combination with a magnetic head that floats at a low level. Another object of the present invention is to provide a method of producing the composition for polishing the magnetic disk substrate. A polishing composition includes alkali metal ions, abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent contained in an aqueous medium. In a method of the present invention for preparing a polishing composition, a pH value of an aqueous medium, in which abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent are contained, is adjusted to a range of about 1 to about 5 by the addition of alkali metal hydroxide to the aqueous medium.
    Type: Grant
    Filed: April 17, 2001
    Date of Patent: May 27, 2003
    Assignee: Showa Denko Kabushiki Kaisha
    Inventor: Norihiko Miyata
  • Patent number: 6565767
    Abstract: The polymer particles of the invention are characterized by being obtained by polycondensation of at least one from among Compound 1 represented by general formula (1), its hydrolysates and its partial condensates, and at least one from among Compound 2 represented by general formula (2), its hydrolysates and its partial condensates, and by having a mean particle size of 3-1000 nm. M(OR1)z  (1) (R2)nM(OR3)z-n  (2) where M is Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo, Sn, Sb, Ta, W, Pb or Ce; z is the atomic valence of M; R1 and R3 are each an alkyl group of 1-5 carbon atoms, an acyl group of 1-6 carbon atoms or an aryl group of 1-9 carbon atoms; R2 is a monovalent organic group of 1-8 carbon atoms; n is an integer of from 1 to (z−2); and R1, R2 and R3 may be the same or different. These particles are used in polishing compositions used for chemical mechanical polishing.
    Type: Grant
    Filed: July 3, 2001
    Date of Patent: May 20, 2003
    Assignee: JSR Corporation
    Inventors: Masayuki Hattori, Masayuki Motonari, Akira Iio
  • Patent number: 6565619
    Abstract: A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, tolyltriazole and their derivatives, and (e) water.
    Type: Grant
    Filed: October 4, 2002
    Date of Patent: May 20, 2003
    Assignee: Fujimi Incorporated
    Inventors: Hiroshi Asano, Kenji Sakai, Katsuyoshi Ina
  • Patent number: 6562114
    Abstract: A spray wax concentrate adapted to be applied in a highly diluted state in an aqueous spray to a surface, such as a vehicle surface, in the hot sun comprising about 2 to 10 wt. % of a fine polishing powder, of about 10 to about 40 wt. % of mineral spirits, of about 0.5 to about 3 wt. % of a dimethyl silicone fluid polymer, from about 0.5 to about 1.75 wt. % of an alkanolamide surface-active agent; from about 1 to about 1.75 wt. % of a higher alkyl amino functional group substituted dimethyl silicone polymer wax, and the balance, water, to obtain a total of 100 wt. %. The spray wax concentrate is preferably applied as pressurized, turbulent aqueous spray containing about 1 part by volume of the spray wax concentrate and about 40 to about 100 parts by volume of water.
    Type: Grant
    Filed: November 16, 2000
    Date of Patent: May 13, 2003
    Inventors: John Yeiser, Robert M. Marchese
  • Patent number: 6562091
    Abstract: A method for preparing a slurry for a chemical mechanical polishing process for a semiconductor device includes putting an organic matter in a solvent, preparing a solution by adding a dispersant to the solvent having the organic matter, hydrolyzing the solution, stirring the solution, and heating the solution. A slurry embodying the present invention has relatively small hydrate particles having a hardness lower than oxide particles, and the particles will remain dispersed in a solution for a longer period of time than background art slurries.
    Type: Grant
    Filed: September 25, 2001
    Date of Patent: May 13, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Wan-Shick Kim
  • Publication number: 20030084815
    Abstract: A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d):
    Type: Application
    Filed: August 8, 2002
    Publication date: May 8, 2003
    Applicant: FUJIMI INCORPORATED
    Inventors: Koji Ohno, Kenji Sakai, Katsuyoshi Ina
  • Publication number: 20030079416
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Application
    Filed: August 17, 2001
    Publication date: May 1, 2003
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
  • Patent number: 6554878
    Abstract: In a first aspect a slurry is provided for chemically mechanically polishing alumina and nickel iron to a common plane and in a second aspect a slurry is provided for additionally chemically mechanically polishing copper to a common plane. The slurry includes a first concentration of colloidal silica, a second concentration of potassium and/or sodium persulfate and a third concentration of ammonium persulfate. In the first aspect the first and second concentrations are tailored to chemically mechanically polish the alumina and the nickel iron at the same rate to a common plane and in the second aspect the slurry includes a third concentration of ammonium persulfate at a proper ratio to the potassium or sodium persulfate to chemically mechanically polish the copper at the same rate as the other materials to the same plane.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: April 29, 2003
    Assignee: International Business Machines Corporation
    Inventors: Frederick Hayes Dill, Jr., Eric James Lee, Peter Beverley Powell Phipps
  • Publication number: 20030075073
    Abstract: A furniture polish comprising a mineral oil, a silicone polish, and a bittering agent may be prepared. Such a composition may be made suitable for dispensing as a spray or mist by means of a non-pressurized spray apparatus by the addition thereto of a shear-thinning thixotropic thickener.
    Type: Application
    Filed: October 22, 2001
    Publication date: April 24, 2003
    Inventors: Timothy I. Moodycliffe, Lynn M. Werkowski
  • Patent number: 6551367
    Abstract: There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: April 22, 2003
    Assignee: Cheil Industries Inc.
    Inventors: Kil Sung Lee, Jae Seok Lee, Seok Jin Kim, Tu Won Chang
  • Patent number: 6547843
    Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
    Type: Grant
    Filed: July 2, 2001
    Date of Patent: April 15, 2003
    Assignee: Showa Denko K.K.
    Inventors: Yoshitomo Shimazu, Takanori Kido, Nobuo Uotani
  • Patent number: 6544307
    Abstract: A polishing compound containing cocoon-shaped silica particles and crystal silica particles, and water-soluble polymers including; at least one type selected from the groups including ammonium nitrate and ammonium acetate, and at least one type selected from methylcellulose, carboxymethylcellulose, hydroxyethylcellulose, and the group including carboxymethylcellulose.
    Type: Grant
    Filed: January 25, 2001
    Date of Patent: April 8, 2003
    Assignee: Rodel Holdings, Inc.
    Inventors: Hajime Shimamoto, Shoji Ichikawa, Katsumi Kondo, Susumu Abe, Kenji Takenouchi
  • Publication number: 20030061766
    Abstract: There is provided a process for polishing monocrystalline semiconductor materials of silicon and germanium to a high degree of surface perfection comprising polishing the material with a modified colloidal silica sol having a pH between about 11 to 12.5 and composed of colloidal silica particles which are coated with chemically combined atoms of aluminum to give a surface coverage of about 1 to about 50 aluminum atoms on the surface per 100 silicon atoms on the surface of uncoated particles. The particles of the modified silica sol used in the process of the invention have a specific surface area of about 25 to about 600 square meters per gram with the silica concentration of the sol ranging from about 2 to about 50% by weight.
    Type: Application
    Filed: September 23, 2002
    Publication date: April 3, 2003
    Inventors: Kristina Vogt, Dietrich Pantke, Lothar Puppe, Stephan Kirchmeyer