Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.

Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.

Abstract: A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a fixed-abrasive type polishing pad with a substantially abrasive-free slurry in which copper is removed at a rate that is substantially the same as or faster than a rate at which a material, such as tungsten, of the barrier layer is removed. The slurry is formulated so as to oxidize copper at substantially the same rate as or at a faster rate than a material of the barrier layer is oxidized. Thus, copper and the barrier layer material have substantially the same oxidation energies in the slurry or the oxidation energy of the barrier layer material in the slurry may be greater than that of copper. Systems for substantially polishing copper conductive structures and adjacent barrier structures on semiconductor device structures are also disclosed.

Abstract: An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

Abstract: The present invention provides a chemical mechanical planarization (CMP) polishing composition that polishes metal layers at a good removal rate and that provides good planarization of metal layers in a process that can be readily controlled. The CMP polishing composition of the present composition includes a plurality of abrasive particles, a triazole or a triazole derivative, a ferricyanide salt oxidizing agent and water and has a pH of from about 1 to about 6. In addition, the present invention includes a method for removing at least a portion of a metallization layer by polishing a metallization layer using the CMP polishing composition of the invention.

Abstract: The present invention provides a novel polishing material with which silicon nitride ceramic and sialon ceramic can be polished at high efficiency through a tribochemical reaction, and a method for manufacturing thereof, said material is used for polishing a silicon nitride ceramic or sialon ceramic as a material being polished, through a tribochemical reaction, and consists of a ceramic sinter containing an element that causes the ceramic being polished to undergo a dissolution reaction at the grain boundary of the sinter, within the particles thereof, and/or in pores thereof.

Abstract: The present invention provides a process for producing particles suitable for use as abrasives in chemical-mechanical polishing slurries. The process according to the invention includes adding a crystallization promoter such as Ti[OCH(CH3)2)]4 to an aqueous cerium salt solution, adjusting the pH of the solution to higher than 7.0 using one or more bases, and subjecting the solution to hydrothermal treatment at a temperature of from about 90° C. to about 500° C. to produce the particles.

Abstract: A self-shining aerosol-type shoe polish composition consisting essentially of 0.5 to 25% by volume of a silicone compound, optionally 3 to 25% by volume of a drying retardant and/or 0.1 to 1% by volume of an anti-static agent component, and the remainder of liquefied gas as a solvent as well as a propellant gas, exhibits excellent drying properties and self-shining effect when sprayed on the surface of shoes.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Abstract: A polishing composition for a substrate for a magnetic disk, which comprises:

Abstract: A method for buffering a chemical mechanical polish chemical slurry is disclosed. Buffering the slurry reduces buildup of local acidic areas at the interface between the polished metal and the polishing pad. Reduction of the local acidic areas improves the uniformity of the polish and an endpoint signal used to determine when to finish the polish operation.

Abstract: By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: Granules based on aluminium oxide having the characteristics: 1 Average grain diameter: 5.

Abstract: A polishing composition comprising the following components (a) to (c):

Abstract: For aluminum disks and glass-made hard disks, those disks having a mean waviness of less than 3 Å are being desired in order to increase the density of memory capacity. The present invention provides polishing compositions that can give smoothly polished surfaces for the disks.

Abstract: A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.

Abstract: An aqueous polishing composition comprising a film forming polymer and an ionic silicone surfactant is described. The polish can be applied to a variety of substrates, particularly to floor surfaces. The coatings are smooth and soil resistant. The polish composition performs as well as state-of-the-art formulations containing a fluorocarbon surfactant.

Abstract: A polishing composition comprising a chelating compound or a salt thereof; a partially esterified product and/or partially etherified product of a polyhydric alcohol compound; and water; a polishing composition comprising water, an abrasive, an intermediate alumina, and a chelating compound or a salt thereof, wherein the content of the intermediate alumina is from 1 to 50 parts by weight, based on 100 parts by weight of the abrasive; and a polishing composition comprising water, an abrasive, an intermediate alumina, a chelating compound or a salt thereof, and a partially esterified product and/or partially etherified product of a polyhydric alcohol compound, wherein the content of the intermediate alumina is from 1 to 50 parts by weight, based on 100 parts by weight of the abrasive. By using the polishing composition, the polishing rate can be increased, and the surface roughness can be lowered, without causing defects such as scratches and pits on the surface of an object to be polished.

Abstract: This invention is directed to a polishing composition used for the chemical mechanical polishing of semiconductor wafers having a copper metal circuit. The composition has a pH of under 5.0 and comprises the following: (a) a water soluble carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers; (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of organic polymer particles, wherein the polymer of the organic polymer particles has a number average molecular weight of at least 500,000 determined by GPC (gel permeation chromatography) and a Tg (glass transition temperature) of at least 25° C.

Abstract: An object of the present invention is to provide a composition for polishing a magnetic disk substrate that is used as a storage device for a computer or the like, and is capable of producing a magnetic disk substrate polished with high precision suitable for use in combination with a magnetic head that floats at a low level. Another object of the present invention is to provide a method of producing the composition for polishing the magnetic disk substrate. A polishing composition includes alkali metal ions, abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent contained in an aqueous medium. In a method of the present invention for preparing a polishing composition, a pH value of an aqueous medium, in which abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent are contained, is adjusted to a range of about 1 to about 5 by the addition of alkali metal hydroxide to the aqueous medium.

Abstract: A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, tolyltriazole and their derivatives, and (e) water.

Abstract: The polymer particles of the invention are characterized by being obtained by polycondensation of at least one from among Compound 1 represented by general formula (1), its hydrolysates and its partial condensates, and at least one from among Compound 2 represented by general formula (2), its hydrolysates and its partial condensates, and by having a mean particle size of 3-1000 nm. M(OR1)z  (1) (R2)nM(OR3)z-n  (2) where M is Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo, Sn, Sb, Ta, W, Pb or Ce; z is the atomic valence of M; R1 and R3 are each an alkyl group of 1-5 carbon atoms, an acyl group of 1-6 carbon atoms or an aryl group of 1-9 carbon atoms; R2 is a monovalent organic group of 1-8 carbon atoms; n is an integer of from 1 to (z−2); and R1, R2 and R3 may be the same or different. These particles are used in polishing compositions used for chemical mechanical polishing.

Abstract: A method for preparing a slurry for a chemical mechanical polishing process for a semiconductor device includes putting an organic matter in a solvent, preparing a solution by adding a dispersant to the solvent having the organic matter, hydrolyzing the solution, stirring the solution, and heating the solution. A slurry embodying the present invention has relatively small hydrate particles having a hardness lower than oxide particles, and the particles will remain dispersed in a solution for a longer period of time than background art slurries.

Abstract: A spray wax concentrate adapted to be applied in a highly diluted state in an aqueous spray to a surface, such as a vehicle surface, in the hot sun comprising about 2 to 10 wt. % of a fine polishing powder, of about 10 to about 40 wt. % of mineral spirits, of about 0.5 to about 3 wt. % of a dimethyl silicone fluid polymer, from about 0.5 to about 1.75 wt. % of an alkanolamide surface-active agent; from about 1 to about 1.75 wt. % of a higher alkyl amino functional group substituted dimethyl silicone polymer wax, and the balance, water, to obtain a total of 100 wt. %. The spray wax concentrate is preferably applied as pressurized, turbulent aqueous spray containing about 1 part by volume of the spray wax concentrate and about 40 to about 100 parts by volume of water.

Abstract: A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d):

Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

Abstract: In a first aspect a slurry is provided for chemically mechanically polishing alumina and nickel iron to a common plane and in a second aspect a slurry is provided for additionally chemically mechanically polishing copper to a common plane. The slurry includes a first concentration of colloidal silica, a second concentration of potassium and/or sodium persulfate and a third concentration of ammonium persulfate. In the first aspect the first and second concentrations are tailored to chemically mechanically polish the alumina and the nickel iron at the same rate to a common plane and in the second aspect the slurry includes a third concentration of ammonium persulfate at a proper ratio to the potassium or sodium persulfate to chemically mechanically polish the copper at the same rate as the other materials to the same plane.

Abstract: A furniture polish comprising a mineral oil, a silicone polish, and a bittering agent may be prepared. Such a composition may be made suitable for dispensing as a spray or mist by means of a non-pressurized spray apparatus by the addition thereto of a shear-thinning thixotropic thickener.

Abstract: There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.

Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.

Abstract: A polishing compound containing cocoon-shaped silica particles and crystal silica particles, and water-soluble polymers including; at least one type selected from the groups including ammonium nitrate and ammonium acetate, and at least one type selected from methylcellulose, carboxymethylcellulose, hydroxyethylcellulose, and the group including carboxymethylcellulose.

Abstract: There is provided a process for polishing monocrystalline semiconductor materials of silicon and germanium to a high degree of surface perfection comprising polishing the material with a modified colloidal silica sol having a pH between about 11 to 12.5 and composed of colloidal silica particles which are coated with chemically combined atoms of aluminum to give a surface coverage of about 1 to about 50 aluminum atoms on the surface per 100 silicon atoms on the surface of uncoated particles. The particles of the modified silica sol used in the process of the invention have a specific surface area of about 25 to about 600 square meters per gram with the silica concentration of the sol ranging from about 2 to about 50% by weight.

Abstract: An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

Abstract: Provided are slurry compositions suitable for use in a chemical-mechanical planarization process and methods for making same. The compositions include: (a) abrasive particles dispersed in a suspension medium; (b) a peroxygen compound; and (c) a stabilizing agent. The stabilizing agent includes a phosphoric acid, a salt of a phosphoric acid or combinations thereof. The invention has particular applicability to the semiconductor manufacturing industry.

Abstract: A polishing composition comprising an abrasive and water, wherein the polishing composition has an index of degree of sedimentation of 80 or more and 100 or less; a process for producing a substrate comprising polishing a substrate to be polished using the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition to polishing with a polishing pad for a nickel-containing object to be polished; and a process for preventing clogging of a polishing pad comprising applying a composition comprising a hydrophilic polymer having two or more hydrophilic groups in its molecule and a molecular weight of 300 or more, or a compound capable of dissolving nickel hydroxide at a pH of 8.0, and water to polishing with a polishing pad for a nickel-containing object to be polished.

Abstract: Powder composition and method for polishing stone. The present invention relates to a powder composition and to a method for polishing stone, in particular granite, said method making use of said powder composition.

Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.

Abstract: A polishing fluid for polishing a metal includes, submicron particles, water, and a nonoxidizing reagent for removal of the metal, the nonoxidizing reagent being a hard base anion species of a Lewis base having a chemical bonding affinity for the metal to deter formation of a passivation oxide on the metal, which hard base anion is present in a concentration that maximizes removal of the metal in the absence of the passivation oxide.

Abstract: A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.

Abstract: An automobile wash and wax composition suitable for simultaneously washing and waxing a soiled exterior surface of a vehicle without buffing. The automotive wash and wax composition being an aqueous emulsion containing an anionic surfactant, a silicone oil, an amino-functional silicone, a wax, and a cationic emulsifier. The wash and wax composition is applied to a pre-wetted exterior surface of a vehicle so as to substantially coat the surface of the vehicle that requires cleaning and polishing. After the coated surface has substantially dried, the surface is washed with a sufficient quantity of water to rinse away the soil particles and the residue of the anionic surfactant, leaving behind a durable, evenly distributed, high-gloss, water resistant protective film of silicones and wax on the vehicle surface, without any buffing of the surface.

Abstract: A polishing composition comprising an abrasive, an oxidizing agent, a polishing accelerator, and water, wherein the polishing accelerator comprises an organic phosphonic acid; a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above polishing composition; a method for polishing a substrate comprising polishing a substrate to be polished with the above polishing composition; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above polishing composition; and a process for accelerating polishing of a magnetic disk substrate, comprising applying the above polishing composition to a magnetic disk substrate to be polished. The polishing composition is highly suitable for polishing a magnetic disk substrate requiring high surface quality to be used in memory hard disk drives.

Abstract: A polishing composition for polishing a semiconductor substrate has a pH of under 5.

Abstract: There is provided a polishing compound for sheet metal coating comprising an polishing material and a surfactant in which a RB ceramics and/or CRB ceramics powder is used at least as a part of the polishing material, thereby shortening a stain removing process of a coated surface in reparative sheet metal coating work of cars, etc. without conducting a washing process thereafter.

Abstract: The object is to provide a water/oil repellent composition which can simultaneously perform a water/oil treatment and a polishing treatment to leather products such as leather shoes, etc., by using one water/oil repellent composition, and can also exert excellent water/oil repellent effect and excellent polishing effect. It is constituted so that microcapsules, in which a polishing agent is encapsulated, are dispersed in a water/oil repellent agent.

Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.

Abstract: The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.

Abstract: A polishing slurry for chemical-mechanical polishing, containing 5 to 50% by weight of a colloidal silica abrasive, and from about 0.1 to about 10% by weight of a quaternary ammonium salt which is represented by the formula R4N+X−, where R may be identical or different and is selected from the group consisting of alkyl, alkenyl, alkylaryl, arylalkyl and an ester group, and X is hydroxyl or halogen, is distinguished by a high polishing rate.