Abstract: A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.

Abstract: A process and apparatus for growing a crysrtal by the Czochralski method, in which a melt is disposed in a crucible, partitioned into an outer annular portion and an inner cylindrical portion by an annular separation element which is open at its bottom, the open bottom being spaced from the bottom of the crucible. The separation element is rotated on its vertical axis and a crystal is pulled from the melt in the inner cylindrical portion by raising a crystal holder, which is also rotated, in the vertical direction. The melt required for growing the crystal flows from the outer annular portion to the inner cylindrical portion over the entire cross-section of the inner cylindrical portion at the bottom of the annular separation element.

Abstract: A plurality of shield blades 31 for defining an opening 25 surrounding a single crystal 15 are provided between a melt 14 received in a crucible 10 and a screen 30. The shield blades 21 are carried by operation rods 23 so as to make the gap between the inner edges of the shield blades 23 and the surface of the single crystal 15 constant. Since crystal growth continues under the same condition from the beginning to the end, an obtained single crystal 15 is free from defects such as dislocations and excellent in homogenieity.

Abstract: An apparatus for pulling up a single crystal according to Czochralski method is provided with a cylindrical first screen and a second screen. The first screen is arranged in the periphery of the zone of pulling up the single crystal, said screen being constituted by a heat absorbing body at the side facing a quartz crucible and by a heat insulator at the other side and being provided with respective outward and inward annular rims at the upper and lower ends thereof, the corner of said screen facing the crucible being formed in a curved or polygonal structure, and said annular rim at the lower end being positioned in the vicinity of filling the melt in the crucible. The second screen forming a parabolic shape in the section opening at its center while enclosing the crystal pulling-up zone and being provided at its upper end with an outward annular rim.

Abstract: A Czochralski method using radiation intercepting members (1, 9) is used for manufacturing a single crystal such as compound semiconductors with a high production yield using a material having a low thermal conductivity or with a small temperature gradient in the pulling direction. In this method, a coracle (6) having an opening is provided in a melt contained in a crucible (3). A first member (1) is positioned on the coracle (6) to intercept heat radiation from the melt. A second member (9) supported by a crystal pulling shaft (8) is positioned on the first member (1) to cover an opening formed at the center of the first member (1). Seeding is performed while heat loss is limited by intercepting the radiation with the first and the second members. After the seeding, a shoulder portion of a single crystal is formed while heat loss is still limited while intercepting the radiation with the members (1, 9). A cylindrical body of the single crystal is pulled by the shaft (8) which also lifts the members (1, 9 ).

Abstract: A support crucible includes a central axis, outer radii including longest outer radii defining planes with the central axis, a side wall region having a circumferential direction and a bottom. At least two neighboring segments are separated by joints extending substantially vertically in the side wall region to the bottom and penetrating the bottom. The joints define opposed surfaces of the neighboring segments which always overlap each other in the circumferential direction of the side wall region in an operating state. Each of the surfaces is intersected by a respective one of the planes, at least in the side wall region. According to another embodiment, the joints defining opposed surfaces of the neighboring segments have complementary shapes, the surfaces are formed by cuts beginning at a jacket surface of the side wall region and extending parallel to the central axis and at an angle to the planes, and the cuts extend in a curve to the central axis.

Abstract: In the Czochralski crucible pulling of crystal ingots, in particular those of silicon and having particularly large crystal diameters, the degree of filling of the crucible is kept approximately constant during the pulling process by continuously adding solid or liquid recharging material. According to the invention, the known disadvantages of thermal disturbances and the introduction of impurities and particles are overcome by a recharging system with a gas-tight seal, comprising additional crucible, stock container for semiconductor material and dopant having the appropriate feedlines and an exhaust gas line. In addition, the process makes possible a regulatable and separate recharging of dopant via the additional crucible.

Abstract: There is disclosed a method for growing single crystal material, particularly silicon, in modified Czochralski process furnaces and chambers. The Czochralski process equipment is modified to permit continuous addition of polycrystalline material, preferably in dry powdered form to a molten bath of the material that is maintained at a constant shallow depth. For this purpose, a circular baffle is placed within the crucible containing the molten bath of the material, dividing the crucible into an annular feed zone and a central crystal growth zone. A cylindrical boule is withdrawn from the central crystal growth zone. The surrounding walls of the crucible, and graphite cup that supports the crucible, provide a heating and annealing zone in which the boule is continuously annealed as it is withdrawn from the molten pool. Dopants are also introduced into the annular feed zone, either separately or admixed with the polycrystalline material.

Abstract: An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.