Abstract: Provided are a substrate processing apparatus, a method of manufacturing a semiconductor device, and a non-transitory computer-readable recording medium, which are capable of reducing an effect on a substrate, which is caused by a change in an atmosphere in a substrate storage container, by appropriately supplying an inert gas into the substrate storage container.

Abstract: A device and method for treatment of a substrate treatment surface of a substrate with a fluid by immersion of the substrate treatment surface into the fluid. The device includes: receiving means for receiving the fluid with an immersion opening and immersion means for immersion of the substrate treatment surfaces through the immersion opening into the receiving means, Rotation means are provided for rotation of the receiving means for at least predominant discharge of the fluid from the receiving means.

Abstract: A substrate liquid processing apparatus of the present disclosure supplies a plurality of processing liquids from a processing liquid supplying unit in a switching manner to a substrate held on a substrate holding unit. An elevatable inner cup surrounds the substrate holding unit laterally and forms a first drain path that drains the first processing liquid. An outer cup surrounds the inner cup and forms a second drain path that drains the second processing liquid. A cover covers the outside of the outer cup, includes an eaves portion that extends inwardly from an upper side, and forms an exhaust path between the cover and the outer cup. The exhaust path is connected to the first drain path and the second drain path above inlets of the first drain path and the second drain path.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: A KrF (248 nm) photoresist patterning process flow is disclosed wherein photoresist patterns having a sub-100 nm CD are formed on a dielectric antireflective coating (DARC) thereby lowering cost of ownership by replacing a more expensive ArF (193 nm) photoresist patterning process. A key feature is treatment of a DARC such as SiON with a photoresist developer solution that is 0.263 N tetramethylammonium hydroxide (TMAH) prior to treatment with hexamethyldisilazane (HMDS) in order to significantly improve adhesion of features with CD down to about 60 nm. After the HMDS treatment, a photoresist layer is coated on the DARC, patternwise exposed, and treated with the photoresist developer solution to form a pattern therein. Features that were previously resolved by KrF patterning processes but subsequently collapsed because of poor adhesion, now remain upright and intact during a subsequent etch process used to transfer the sub-100 nm features into a substrate.

Abstract: A semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by: causing a first temperature change of the semiconductor wafer using a first temperature changing unit; and subsequently causing a second temperature change using a second temperature changing unit; wherein the first change is greater than the second change; and subsequently loading the semiconductor wafer on a processing area of a semiconductor wafer processing apparatus.

Abstract: The present disclosure provides a developing unit that includes a wafer stage designed to secure a semiconductor wafer; an exhaust mechanism configured around the wafer stage and designed to exhaust a fluid from the semiconductor wafer; and a multi-switch integrated with the exhaust mechanism and designed to control the exhaust mechanism at various open states.

Abstract: In one embodiment, a liquid treatment method includes (A) imaging a discharging port part of the liquid nozzle each time the discharging process is performed to one substrate, and acquiring, from images thus obtained, size data on foreign matter possibly present at the discharging port part; and (B) based on a history of the size data arranged in chronological order, judging whether an abnormality in substrate-processing has occurred. In the item (B), if the number of continuous acquisition, indicating how many times the size data not smaller than a first threshold value has been acquired continuously, exceeds a predetermined value, then judging that an abnormality in substrate-processing has occurred.

Abstract: Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.

Abstract: An apparatus and method for centering substrates determining on a chuck. The apparatus includes a chuck in a process chamber, the chuck configured to removeably hold a substrate for processing; an array of two or more ultrasonic sensors arranged in the process chamber, each ultrasonic sensor arranged relative to the chuck so as to send a respective ultrasonic sound wave to a respective preselected region of the substrate and receive a respective return ultrasonic sound wave from the preselected region of the substrate; and a controller connected to each ultrasonic sensor and configured to compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave from each ultrasonic sensor.

Abstract: The disclosure provides an ink jet printing apparatus. The ink jet printing apparatus includes a support base configured to support the to-be-processed substrate; and a solvent adjusting mechanism, configured to supply a dummy region of the to-be-processed substrate on the support base with a first solvent that is same as a solvent in an ink and adjust a solvent atmosphere of the dummy region of the to-be-processed substrate on the support base, to make the solvent atmosphere of the dummy region of the to-be-processed substrate and that of a center region of the to-be-processed substrate reach a predetermined condition. The solvent adjusting mechanism is arranged on the support base.

Abstract: A method includes performing a spin coating process. In the spin coating process, a first fluid is dispensed to a surface of a wafer. The method further includes performing an inspection of an edge area of the wafer. On the basis of the inspection of the edge area of the wafer, a defect analysis is performed. In the defect analysis, it is determined if the edge area of the wafer has a defect that is indicative of an insufficient coating of the surface of the wafer by the first fluid.

Abstract: In one embodiment, a cleaning member has an annular part and an opening positioned radially inside the annular part, and can be moved up and down between a first position and a second position relative to a cleaning nozzle. For cleaning of the back surface of the wafer, the cleaning member is placed at its first position that allows a cleaning liquid to reach the back surface of the substrate through the opening of the cleaning member. For cleaning of the cup structure, the cleaning member placed at its second position higher than the first position is being rotated, and a cleaning liquid discharged from the cleaning nozzle collides with an annular part of the cleaning member and is guided to the inner surface of a cup structure.

Abstract: A substrate treatment apparatus includes: a nozzle having an opposing surface to be opposed to and spaced from a front surface of a substrate rotated by a substrate rotating unit, the nozzle further having an outlet port provided in the opposing surface to be opposed to a rotation center of the substrate; a second liquid supply control unit which controls the second liquid supplying unit to fill a space defined between the front surface and the opposing surface with the second liquid in a liquid filled state, and then stop supplying the second liquid to form a liquid puddle in the space; and a first liquid supply control unit which controls a first liquid supplying unit to spout a first liquid from the outlet port after the formation of the liquid puddle.

Abstract: A substrate handler for transferring substrates to be exposed from a track to a lithographic apparatus. The substrate handler comprises a controller. The controller is configured to determine an instance for starting a transfer process of a first one of the substrates. The instance is based on a predetermined processing characteristic of the lithographic apparatus, in order to maintain a transfer period of the substrate in the substrate handler substantially constant.

Abstract: In a substrate processing device 10 having a heating and drying unit 103 for drying a surface of a substrate W, the heating and drying unit 103 heats upward a vertically downward surface of the substrate W to dry the surface of the substrate by dropping and removing, by gravity, the droplets of the volatile solvent formed on the surface of the substrate W by the heating operation.

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article of a predetermined diameter in a predetermined orientation. The chuck includes a heater comprising a plurality of gas nozzles directed toward a surface of a wafer shaped article when held by the chuck. The heater comprises a gas inlet and at least one heating element for heating gas to be discharged through the plurality of gas nozzles. The heater is configured to heat a wafer shaped article principally by convective heat transfer from heated gas discharged through the plurality of gas nozzles.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.

Abstract: The present disclosure is a joining method that joins a target substrate and a support substrate, wherein the method has: a joining operation that includes pressing and joining the target substrate and the support substrate by interposing an adhesive therebetween; and an adhesive removing operation that includes supplying a solvent of the adhesive to the outer adhesive that is the adhesive between the target substrate and the support substrate protruding in the joining operation from the outer lateral surface of the stacked substrate made by joining the target substrate and the support substrate, and to remove the surface of the outer adhesive so that the outer adhesive is formed at a predetermined size.

Abstract: A cleaning apparatus including a holding table for holding a plate-shaped workpiece, a cleaning nozzle for spraying a cleaning fluid to the plate-shaped workpiece, and a table cover for covering a circumference of the holding table. The table cover includes a top plate for covering an upper side of the holding table and a side plate for covering the circumference of the holding table. The table cover is provided with a netlike mesh sheet spaced from a lower surface of the top plate and another netlike mesh sheet spaced from an inner surface of the side plate.

Abstract: A substrate holding and rotating device includes: a turntable rotatable; a rotative drive unit which rotates the turntable; a holding member which is provided on the turntable and horizontally holds a substrate in upwardly spaced relation to the turntable; a vertically movable protection disk disposed between the turntable and a substrate holding position; and a magnetic levitation mechanism including a first magnet attached to the protection disk, an annular second magnet which generates a repulsive force with respect to the first magnet, a support member which non-rotatably supports the second magnet, and a relative movement mechanism which moves the support member and the turntable relative to each other.

Abstract: Provided is a fluid dispensing system with a dispense nozzle with a threaded outer surface and a fluid dispensing apparatus with a movable dispenser arm with an opening that includes threaded inner walls that receive the dispense nozzle therein. Also provided is a method for aligning a dispense head in a coating tool. Horizontal alignment is achieved by rotating the dispense nozzle until its tip is in contact with the chuck then laterally adjusting the dispenser arm position so that the tip is positioned over a center of the chuck. Vertical alignment is achieved by rotating the dispense nozzle until an indicia of the dispense nozzle is at the same vertical location as a designated physical feature of the dispenser arm.

Abstract: A semiconductor evaluating device includes a chuck stage for holding a semiconductor device serving as a measuring object, a contact probe for evaluating an electrical characteristic of the semiconductor device by getting contact with the semiconductor device held on the chuck stage, and a fluid spraying portion for spraying a fluid onto the semiconductor device.

Abstract: A substrate is surrounded by an inner cup and an outer cup. A distance between an upper surface of an inner cup lower portion and a lower surface of an inner cup upper portion of the inner cup is gradually reduced outward from an outer periphery of the substrate. A clearance is formed between the upper surface of the inner cup lower portion and the lower surface of the inner cup upper portion at outer peripheries of the inner cup lower portion and the inner cup upper portion. A collection space is formed between the upper surface of the inner cup lower portion and the lower surface of the inner cup upper portion. A scatter capturing space that allows a processing liquid that has passed through the clearance to scatter and captures the scattering processing liquid is formed by an outer cup. An upper portion and an outer periphery of the scatter capturing space are covered by a lower surface and an inner side surface of the outer cup, respectively.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: Chemical bath deposition (CBD) apparatuses and fabrication methods for compound thin films are presented. A chemical bath deposition apparatus includes a chemical bath reaction container, a substrate chuck for fixing a substrate arranged face-down toward the bottom of the chemical bath reaction container, multiple solution containers connecting to a reaction solution mixer and further connection to the chemical bath reaction container, and a temperature control system including a first heater controlling the temperature of the chemical bath reaction container, a second heater controlling the temperature of the substrate chuck, and a third heater controlling the temperature of the multiple solution containers.

Abstract: A liquid processing apparatus includes a substrate retaining part that retains a substrate in a horizontal position and rotates the substrate, first and second processing liquid supply nozzles disposed to supply first and second processing liquids, respectively, to the substrate, liquid receiving cups disposed to appropriately position an upper end thereof above the substrate and to receive the first or second processing liquid that has been supplied to the substrate, a first tubular outer cup including an upper opening and disposed around the liquid receiving cup, vertically movable between a lifted position to which the first tubular outer cup is lifted so that its upper end is positioned above the liquid receiving cup, and a lowered position lower than the lifted position, and a second tubular outer cup disposed externally to the first tubular outer cup. The tubular outer cup is selected according to the kind of processing liquid.

Abstract: A method for processing a plurality of substrates after forming a photosensitive film on each substrate includes carrying each substrate into a placement buffer including a plurality of supporters by a first transport mechanism; taking out each substrate from the placement buffer to an interface by a second transport mechanism; carrying each substrate into the exposure device; carrying each substrate out of the exposure device into the placement buffer by the second transport mechanism; taking out each substrate from the placement buffer to the processing section by the first transport mechanism; performing development processing on each substrate; making each substrate stand by at the placement buffer based on timing at which the exposure device can accept each substrate; and making each substrate stand by at the placement buffer based on timing at which the developing device can accept each substrate.

Abstract: Various aspects of the instant disclosure are directed to methods and to apparatuses involving spin-coating and spin-coated materials. As may be implemented in connection with one or more embodiments, a solution having objects dispersed therein is applied to a substrate and the substrate is spun about an axis that is off-center relative to a center of the substrate. The objects are thus aligned along a predominantly unidirectional orientation. The solution is solidified with the objects aligned to one another along the predominantly unidirectional orientation.

Abstract: A liquid processing apparatus of the present disclosure performs a liquid processing by supplying a processing liquid to a substrate that is rotating. A substrate holding unit configured to be rotatable around a vertical axis is provided with a holding surface to attract and hold a bottom surface of the substrate horizontally. A guide unit is formed integrally with the substrate holding unit, disposed around the substrate held in the substrate holding unit, and provided at a position equal to or lower than a height of a top surface of a periphery of the substrate. The guide unit includes a guide surface configured to guide the processing liquid. A rotary cup rotates integrally with the substrate holding unit, and guides the processing liquid towards the cup between the rotary cup and the guide unit.

Abstract: Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.

Abstract: The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.

Abstract: Provided is a substrate processing apparatus wherein, even if a trouble occurs, it is bound to continue a process for the substrate without stopping the substrate processing apparatus entirely. The substrate processing apparatus according to the present disclosure includes first and second substrate conveying devices configured to convey wafers, and first and second processing blocks provided on the right and left sides of the substrate conveying device and having processing unit arrays each configured to perform the same process. Processing unit arrays on one side and processing unit arrays on the other side are respectively connected to a processing liquid supply system commonly provided with them. And, when any one of substrate conveying devices, processing liquid supply systems has a problem, the process for the wafer can be performed in the processing unit array to which the substrate conveying device and the processing liquid supply system under normal operation belong.

Abstract: A substrate treatment apparatus includes: a substrate holding unit which horizontally holds a substrate; a substrate rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; a treatment liquid supplying unit which supplies a treatment liquid to an upper surface of the substrate held by the substrate holding unit; an opposing member to be located in opposed spaced relation to the upper surface of the substrate held by the substrate holding unit in contact with a film of the treatment liquid formed on the upper surface of the substrate so as to receive a lift force from the liquid film; a support member which supports the opposing member; and an opposing member holding mechanism which causes the support member to hold the opposing member in a vertically relatively movable manner.

Abstract: A spin deposition apparatus includes a deposition mask configured to be arranged proximate a target substrate. The deposition mask includes at least one fluid reservoir offset from a rotational axis of the deposition mask and configured to hold fluid for dispersal on a portion of a surface of the target substrate.

Abstract: Provided is a substrate treatment device. The device includes: a substrate support member supporting a substrate to be treated; a rotation driving member rotating the substrate support member; a container provided around the substrate support member; and a treatment solution supply unit including a photoresist nozzle for supplying a photoresist to a top surface of the substrate, wherein the photoresist nozzle starts supplying the photoresist while the substrate support member rotates at a first supply speed and stops supplying the photoresist while the substrate support member rotates at a second supply speed decelerated from the first supply speed.

Abstract: A spin treatment apparatus according to an embodiment includes: an annular liquid receiver surrounding a rotating substrate at a distance from an outer periphery of the substrate and configured to receive liquid flying from the rotating substrate and accommodate the liquid; an annular cup body surrounding the liquid receiver at a distance from an outer periphery of the liquid receiver and forming an annular outer exhaust flow channel for generating an airflow along an upper surface to an outer peripheral surface of the liquid receiver; and an annular partitioning member provided inside the annular liquid receiver and forming an annular inner exhaust flow channel for generating an airflow along an inner peripheral surface to a lower surface of the liquid receiver.

Abstract: A substrate processing apparatus comprising a substrate holding rotating mechanism, a process liquid supply mechanism having a nozzle for dispensing a process liquid toward a principal face of the substrate, a processing liquid reservoir for holding sufficient process liquid to form a liquid film covering the whole principal face of the substrate, a liquid film forming unit for forming the liquid film by supplying the process liquid onto the principal face of the substrate in a single burst, and a control unit for controlling the liquid film forming unit and the process liquid supply mechanism such that the process liquid is dispensed from the process liquid nozzle toward the principal face of the substrate after formation of the liquid film covering the whole area of the principal face of the substrate by the liquid film forming unit.

Abstract: An optimal development method and an apparatus of a resist formed on a half-inch size wafer. The development method is a development method of a resist formed on a wafer with a wafer size for manufacturing a number of minimized units of semiconductor devices. The method includes a first step, a second step, a third step, and a fourth step. The first step drops developer until a thickness of developer becomes maximum on the wafer whose rotation is stopped. The second step performs development while rotating the wafer. The third step supplies the developer about a half of the amount of developer of the first step on the wafer whose rotation is stopped. The fourth step performs development at a development period longer than the second step while rotating the wafer.

Abstract: A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.

Abstract: A system, apparatus, and method for creating designs on an underlying material by spinning a platform on which the material is positioned while applying a coloring agent on the material through an aperture in an upper surface of a casing that houses the spinning platform.

Abstract: In a spin-chuck with plural collector levels, a separate exhaust controller is provided for each level. This permits selectively varying gas flow conditions among the collector levels, so that the ambient pressure at one level does not adversely affect device performance in an adjacent level.

Abstract: A method for developing a substrate includes spinning the substrate with a spin holder and discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder. The method also includes causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate. The method further includes causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate. At least two of loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other.

Abstract: A nanotube-photoresist composite is fabricated by preparing a nanotube suspension using a nanotube structure-containing raw material, dispersing the nanotube suspension in a photoresist using ultra-sonication to produce a nanotube suspension-photoresist mix, spin-coating the nanotube suspension-photoresist mix on a substrate to form a nanotube suspension-photoresist composite layer, and removing one or more solvents in the nanotube suspension-photoresist composite layer by baking.

Abstract: Provided is an image pickup element, including: condenser lenses made of a resin containing fine metal particles; photoelectric conversion elements formed in a silicon substrate and each configured to photoelectrically convert incident light that enter from an outside through corresponding one of the condenser lenses; and a protective film made of a silicon compound, the protective film being formed between the condenser lenses and the silicon substrate.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contamination attached to a cup. The liquid processing apparatus includes: a processing chamber in which a substrate holding unit holding a substrate and a cup placed around the substrate holding unit are installed; a nozzle for supplying a processing liquid to the substrate held by the substrate holding unit; and a cup cleaning unit cleaning the cup by supplying a cleaning liquid to the upper part of the cup. A concave portion is formed in the upper part of the cup and the cup cleaning units supply the cleaning liquid to the concave portion in the upper part of the cup.

Abstract: A device to form a coating film which can quickly coat a substrate of a follow-up lot after coating a preceding lot. The device is configured such that nozzles for a preceding lot and a following lot are integrated into a common movement mechanism and moved between an upper side of a liquid processing unit and a standby area. A coating method includes sucking air into the nozzle for the preceding lot to form an upper gas layer, sucking a solvent for the preceding lot in the standby area to form a thinner layer, and sucking air into the nozzle for the preceding lot to form a lower gas layer within the nozzle, and thus forming a state that a solvent layer is interposed between the upper gas layer and the lower gas layer.

Abstract: A method for wet treatment of plate-like articles includes, a chuck for holding a single plate-like article having an upwardly facing surface for receiving liquid running off a plate-like article when being treated with liquid, wherein the chuck is outwardly bordered by a circumferential annular lip. The chuck has an outer diameter greater than the greatest diameter of the plate-like article to be treated, and a rotatable part with an upwardly facing ring-shaped surface for receiving liquid running off the circumferential lip of the chuck. The rotatable part is rotatable with respect to the chuck, the ring-shaped surface is coaxially arranged with respect to the circumferential annular lip, the inner diameter of the ring-shaped surface is smaller than the outer diameter of the chuck, and the distance d between the lip and the upwardly facing ring-shaped surface is in a range from 0.1 mm to 5 mm.

Abstract: A photoresist coating process including a first step and a second step is provided. In the first step, a wafer is accelerated by a first average acceleration. In the second step, the wafer is accelerated by a second average acceleration. The first acceleration and the second acceleration are both larger than zero, and photoresist material is provided to the wafer only in the second step.