Abstract: The invention relates to a coating process for the coating of an interior of a pipework system (1) with a coating material (541), preferably for the coating with an epoxy resin (541), which pipework system (1) includes a part-system (2, 21, 22) between a first connection (3, 31, 32) and a second connection (4, 41, 42), and the coating process includes in a first process step the following steps in an arbitrary order: providing a first pressure fluid (54), in particular air (54), which first pressure fluid (54) is under a coating over-pressure (P+4) with respect to an ambient pressure (P0). Providing a second pressure fluid (64), in particular air (64), which second pressure fluid (64) is under a coating low-pressure (P?4) with respect to the ambient pressure (P0). Providing the coating material (541) in a storage tank (13), in particular in a storage hose (13). Connecting a pressure outlet (131) of the storage tank (13) with the first connection (31) of the first part-system (21).

Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract: Temperature adjustment means is provided to a chamber for accommodating a stage, a discharge head, and a maintenance device. The temperature adjustment means adjusts the temperature of the maintenance area at least while the transport device has the discharge head positioned in the maintenance area, so that the temperature is equal to or greater than the temperature of the drawing area while the transport device has the discharge head positioned in the drawing area.

Abstract: Methods, apparatus and systems for performing a marking operation to mark a presence or absence of at least one underground facility using a marking device. Marking material is dispensed onto a target surface via actuation of an actuation system of the marking device. A location tracking system detects a location of the marking device. One or more input devices of the marking device detect(s) one or more operating conditions of the marking device, and marking information is logged into local memory of the marking device. In one aspect, at least some operating information relating to the one or more detected conditions of the marking device are included in the marking information logged into memory.

Abstract: The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a wafer; measuring the wafer for wafer data after the first process; securing the wafer on an E-chuck in a processing chamber; collecting sensor data from a sensor embedded in the E-chuck; adjusting clamping forces to the E-chuck based on the wafer data and the sensor data; and thereafter performing a second process to the wafer secured on the E-chuck in the processing chamber.

Abstract: A method of gumming a web of paper material in a filter tip attachment machine is implemented using a gumming device that comprises a gumming roller and a transfer roller counter-rotating tangentially one to another about horizontal and parallel axes, and creating a trough in which to hold a prescribed quantity of adhesive supplied by a feed circuit, also a drive system by which the rollers are set in rotation on their axes, and a control unit to which both the feed circuit and the drive system are interlocked. The gumming roller revolves tangentially to the web of material at a gumming station, and the method envisages a procedure, triggered in the event of a stoppage affecting the machine, that consists in the steps of suspending delivery of the adhesive, distancing the web of paper material from the gumming roller, and reversing the direction of rotation of the rollers, relative to the direction of rotation during normal operation, in such a way that the trough is emptied gradually of adhesive.

Abstract: Methods, apparatus, and systems for facilitating a marking operation to indicate a presence or an absence of at least one underground facility. Marking information, including one or both of environmental information representative of at least one environmental condition of an environment in which the marking operation is located, and operating information representative of at least one operating condition of a marking device used to perform the marking operation, is received and compared to a target value or a range of values to determine if an out-of-tolerance condition exists.

Abstract: A process (300) is disclosed to measure predetermined wavelength reflectance spectra of a photo resist coated wafer (305,310,315,320) at a nominal thickness. After coating, the predetermined wavelength reflectance (325,330) is measured and the peak heights and valleys in the vicinity of the predetermined wavelength are tabulated. The relative swing ratio is computed (335) as the average peak height of the spectra at the exposure wavelength. This relative swing ratio is then compared to similar computations on other processes to determine which provides the best critical dimension (CD) control.

Abstract: An ejection inspection device includes: an inspection stage on which an inspection sheet is sucked and mounted; a sheet feeding mechanism which feeds the inspection sheet wound in a roll form onto the inspection stage; a sheet taking-up mechanism which takes up the fed inspection sheet from the inspection stage; a suction air valve unit which controls the suction air of the inspection stage; a floating air valve unit which controls the floating air of the inspection stage; and a control unit which controls the suction air valve unit, the floating air valve unit, the sheet feeding mechanism, and the sheet taking-up mechanism. The control unit floats the inspection sheet for performing the feeding operation of the inspection sheet and the taking-up operation thereof.

Abstract: A plasma processing apparatus is provided with a replacement time detecting unit, which detects the status of residual charges which attract a semiconductor wafer and detects a time when an electrostatic chuck is to be replaced, at a time when a direct voltage application from a direct current source is stopped and the semiconductor wafer is brought up from the electrostatic chuck.

Abstract: An apparatus designed to increase the quality of a low-resistance semiconductor single crystal doped with an N-type volatile dopant to a high concentration and increase the production yield by controlling the pressure inside the furnace with good controllability. A vacuum line, a pressure control valve, and an open valve are newly added to the conventional semiconductor single crystal production apparatus. A controller controls the pressure control valve on the basis of a detection value of pressure detection means so as to obtain the desired low resistance value of the semiconductor single crystal. The open valve is controlled so that the open valve is opened in a case where the pressure inside the furnace detected by the pressure detection means reaches an abnormal value.

Abstract: There is provided a layer forming apparatus for forming a photosensitive layer of an electrophotographic photoreceptor, containing no bubbles in a coating liquid. In the layer forming apparatus for forming the photosensitive layer of the electrophotographic photoreceptor through the dip coating method, a lower end port of a dipping cylinder is distanced away in a horizontal direction from a coating liquid discharge port, and the coating liquid discharge port is disposed above the lower end port of the dipping cylinder, in order to prevent a bubble from moving into a coating liquid portion used for actual coating even when a bubble exits in the course of circulation of the coating liquid.

Abstract: A device and a method for visual monitoring and stabilization of an elongated metallic strip during continuous transport of the strip in a transport direction along a predetermined transport path, wherein the strip has been coated with a metallic layer by the strip having continuously passed through a bath of molten metal. The device includes an electromagnetic stabilizing device with at least one first pair of electromagnetic stabilizing means arranged on each side of the predetermined transport path, and a wiping device for wiping off superfluous molten metal from the strip by applying an air current in a line transversely of the transport direction of the strip and across essentially the whole width of the strip. A first image-reading apparatus takes images of the actual position of the strip in relation to the predetermined transport path. A second and third image-reading apparatus take images of the surface of the strip.

Abstract: Ion-enhanced physical vapor deposition is utilized to deposit repair material on Ti alloy turbine parts. Pulse modulation may be used to control a bias voltage and an ionization.

Abstract: A painting apparatus comprising a paint module able to receive a paint container containing paint, an applicator, a conduit fluidly connecting the paint to the applicator, and a pump assembly to supply a flow of paint to the applicator via the conduit, in which the painting apparatus includes a control unit to prevent the flow of paint to the applicator until the applicator is applying paint to the surface to be painted (FIG. 1).

Abstract: An apparatus for sensing a spin chuck for a spin coating unit includes a spin chuck which sucks a wafer with vacuum pressure to allow the wafer to be placed thereon, a rotary shaft which is rotated by driving of a motor below the spin chuck correspondingly thereto, and whose upper end is engaged with the spin chuck so as to interlock with the rotation of the spin chuck and a shaft guide shaped so as to surround a tubular stationary shaft of the spin chuck engaged with the rotary shaft. The apparatus further includes a sensing unit which senses whether or not the stationary shaft of the spin chuck is inserted into the shaft guide to a predetermined height a control unit which determines whether or not the spin chuck has been assembled normally from a signal sensed by the sensing unit and a notifying means which is controlled by the control unit to allow a user to recognize an assembled state of the spin chuck.

Abstract: A method for controlling a chemical solution applying apparatus is disclosed. The method includes setting at least two dummy dispense rates for dummy dispensation which is periodically carried out by the chemical solution applying apparatus, and switching the dummy dispense rates so that the amount of chemical solution dispensed during a first predetermined period is kept over a predetermined value.

Abstract: A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.

Abstract: Embodiments of the present invention are directed to a system and method for controlling fabrication of three-dimensional objects, layer by layer, the system comprising a printing assembly, including an irradiation unit and a printing head, the printing assembly is movable between a printing area and a service area. A light sensor positioned at the service area to measure output radiation power of the irradiation unit at a printing plane and a controller to receive information from the sensor and to automatically adjust electrical power supplied to the irradiation unit based on the information.

Abstract: A molecular beam source for use in thin-film accumulation, which enables the adjustment of the volume of a molecular beam, which is discharged per hour by using a needle valve, to be constant irrespective of a decrease in a thin-film element-forming material remaining within a crucible, contains heaters 32 and 42 for heating the thin-film element-forming materials “a” and “b” within crucibles 31 and 41, and valves 33 and 43 for adjusting the volumes to be discharged of molecules of the thin-film element forming materials “a” and “b”, which are generated within the crucibles 31 and 41.

Abstract: A deposition apparatus includes a vacuum chamber, a plasma gun adapted to emit a plasma onto a deposition material accommodated in the vacuum chamber, and a discharge gas supply unit adapted to supply a discharge gas to the plasma gun. The deposition apparatus comprises a mass flow controller adapted to change a flow rate of the discharge gas, and a control circuit which is connected to the mass flow controller and adapted to control, the change in flow rate by the mass flow controller, based on a predetermined setting.

Abstract: A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source.

Abstract: An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to maintain this alignment. This information can also be fed back to the ion implantation equipment to modify the implant parameters. These techniques can also be used in other ion implanter applications.

Abstract: Embodiments of the present invention generally provide apparatus and methods for preventing contamination within a processing system due to substrate breakage. In one embodiment, an acoustic detection mechanism is disposed on or within a process chamber to monitor conditions within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions indicative of substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions that are known to lead to substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism is combined with an optical detection mechanism. By early detection of substrate breakage or conditions known to lead to substrate breakage, the process chamber may be taken off line and repaired prior to contamination of the entire process system.

Abstract: Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source within a source space comprising: sensing the accumulation of the chemical on a sensing surface; and controlling the temperature of the chemical source depending on said sensed accumulation.

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device, in which shape variations of discharge electrodes can be early detected so as to prevent a film having anon-uniform thickness from being formed on a substrate. The substrate processing apparatus includes a process chamber configured to stack a plurality of substrates therein, a gas supply unit configured to supply gas to an inside of the process chamber, at least one pair of electrodes installed in the process chamber and configured to receive high-frequency power to generate plasma that excites the gas supplied to the inside of the process chamber, and a monitoring system configured to monitor a shape variation of the electrodes.

Abstract: A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.

Abstract: Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.

Abstract: The present invention relates generally to the field of semiconductor device manufacturing and more specifically to the manufacture and certification of semiconductor processing equipment. Systems and methods are described that establish a baseline contamination levels at each stage of the manufacture, assembly, testing, and installation of a process chamber.

Abstract: There are installed, on a surface of an window on a vacuum chamber side, an insulating side face portion, which extends radially from the center of a generating unit of a plasma generating device and is disposed so as to be orthogonal to a substrate mounting face of an electrode, and a conductive layer, which is made of a material identical to that for the substrate and placed in an area corresponding to the generating unit on the surface of the window on the vacuum chamber side.

Abstract: A method and system for distributing sauce is disclosed. The method and system may include retrieving runtime parameters from memory or from user input, for distributing sauce onto pizza dough from an arm positioned over a turntable. The method and system may include coordinating turntable speed, sauce dispensing speed, and arm movement speed.

Abstract: Provided is a liquid processing apparatus (method) that forms a coating film by supplying and pouring a coating solution from a coating solution nozzle onto a surface of a substrate held substantially horizontally by a substrate holder. In the liquid processing apparatus (method), a unit for photographing a leading end portion of a coating solution nozzle 10 is provided. When performing a process for anti-drying of the coating solution for a long period of time in advance, a position of the coating solution and a position of an anti-drying liquid are set by using a soft scale 121a displayed on a screen where the photographed image is displayed. Therefore, a dispense control is performed based on a set value without depending on the naked eyes and a control for suppressing the drying of the coating solution in the leading end portion of the coating solution nozzle is performed.

Abstract: A plasma generating apparatus is provided with an impedance matching member, which is connected to a feeding line that supplies an antenna element with a high frequency signal, and has variable characteristic parameters for impedance matching; a distribution wire, which is arranged corresponding to the impedance matching member and connects the impedance matching member with at least two antenna elements; and a control section which changes at the same time impedance matching statuses of at least the two antenna elements connected to the impedance matching member through the distribution wire by changing the characteristic parameters of the impedance member. Thus, the number of impedance matching devices is smaller than that of the antenna elements, and a mechanism relating to impedance matching is made relatively small.

Abstract: A plasma treatment apparatus includes a susceptor, a silica cover covering a plasma generating area above the susceptor, a chamber housing the susceptor and the silica cover, a gas inlet introducing conditioning gas into the chamber, a plasma generator generating a plasma of the conditioning gas configured to perform conditioning of the silica cover, an analyzing unit configured to monitor changes in a nitride layer on the surface of the silica cover, and a control unit connected to the analyzing unit configured to determine completion of the conditioning based on the change in the nitride layer.

Abstract: A spray coating apparatus comprises a spray gun (12) operable to deposit a sprayed coating via a spray nozzle (18) onto a surface, a mapping means (22) associated with the spray gun (12) operable to ascertain and store topographical characteristics of the surface, a position sensor (28) operable to ascertain the position of the spray gun (12) relative to the surface, a coating thickness monitor (26) operable to ascertain the thickness of a coating applied to the surface, and a nozzle control means (24) operable to control the deposition of the sprayed coating, wherein the nozzle control means (24), in use, control the deposition of the sprayed coating in response to information provided by the position sensor (28), the coating thickness monitor (26) and the mapping means (22).

Abstract: Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.

Abstract: An edge bead removal device for a spin coater apparatus and methods of edge bead removal that overcome the deficiencies of conventional edge bead removal techniques. The edge bead removal device includes a coater cup and a head situated within the coater cup proximate to a peripheral edge of a substrate. The head is movable in a radial direction relative to an azimuthal axis of a rotatable substrate support inside the coater cup. The position of the head relative to a rim of the peripheral edge is mapped using an optical sensor. When the substrate support rotates the substrate and the head is used to dispense edge bead removal chemical, the radial position of the head is adjusted, as guided by the map, relative to the azimuthal axis to maintain a constant gap between the head and the substrate's peripheral rim.

Abstract: A deposition apparatus and methods for controlling an actuator and a heating system in a deposition apparatus are proposed. The deposition apparatus comprises a deposition chamber and at least one substrate holder movably arranged within the deposition chamber for holding substrates to be coated. The deposition apparatus shall further comprise radio equipment having at least a first radio device which is connected to the substrate holder and a second radio device which is arranged at least partially outside the deposition chamber. Between the first radio device and the second radio device a radio link is to be established at least temporarily for transferring information.

Abstract: A method for depositing a material on a substrate includes providing an apparatus with at least one material dispenser. The method further includes positioning the pen tip at a predetermined writing gap where the predetermined writing gap is a distance of more than 75 micrometers above the substrate. The method also provides for controlling velocity of the flow of material through the outlet and dispense speed based on dispensed line height and dispensed line width parameters. An apparatus for depositing a material on a substrate is also provided which may have one or more mechanical vibrators, a pen tip with a hydrophobic surface, or multiple nozzles and pen tips on a single pump.

Abstract: An apparatus and method for gas injection sequencing in order to increase the gas injection total pressure while satisfying an upper limit to the process gas flow rate, thereby achieving gas flow uniformity during a sequence cycle and employing practical orifice configurations. The gas injection system includes a gas injection electrode having a plurality of regions, through which process gas flows into the process chamber. The gas injection system further includes a plurality of gas injection plenums, each independently coupled to one of the aforesaid regions and a plurality of gas valves having an inlet end and an outlet end, where the outlet end is independently coupled to one of the aforesaid plurality of gas injection plenums. The gas injection system includes a controller coupled to the plurality of gas valves for sequencing the flow of process gas through the aforesaid plurality of regions.

Abstract: The problem regarding volatileness of a solvent in an EL forming material, which occurs in adopting printing, are solved. An EL layer is formed in a pixel, portion of a light emitting device by printing. Upon formation of the EL layer, a printing chamber is pressurized to reach a pressure equal to or higher than the atmospheric pressure, and the printing chamber is filled with inert gas or set to a solvent atmosphere. Thus the difficulty in forming an EL layer by printing is eliminated.

Abstract: A vapor deposition apparatus capable of forming an organic thin film having a good film quality is provided. In the vapor deposition apparatus of the present invention, a tray is disposed in an evaporation chamber, and a feed device feeds a vapor deposition material onto the tray. The tray is placed on a mass meter, which measures the mass of the vapor deposition material disposed on the tray, and a controller compares the measured value with a reference value in order to make the feed device feed the vapor deposition material in a necessary amount. Since the vapor deposition material is replenished when needed, the vapor deposition material does not run short during the film formation, or a large amount of the vapor deposition material is not heated for a long time. Thus, the vapor deposition material does not change in quality.

Abstract: Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and second traps each in fluid communication with the first exhaust line, and a vacuum pump coupled to the first exhaust line to remove gases from the reaction chamber. The first and second traps are operable independently to individually and/or jointly collect byproducts from the reaction chamber. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The present invention comprises an automated apparatus capable of spray depositing polyelectrolytes via the LbL mechanism with minimal or no human interaction. In certain embodiments, the apparatus sprays atomized polyelectrolytes onto a vertically oriented substrate. To counteract the effects of irregular spray patterns, the substrate is preferably slowly rotated about a central axis. In certain embodiments, the apparatus also includes a forced pathway for the droplets, such as a pathway created by using a vacuum. In this way, a thicker or three-dimensional substrate can be coated. In certain embodiments, the apparatus is designed so as to be scalable. Thus, through the use of multiple instantiations of the apparatus, a large or irregularly shaped substrate can be coated. Rolls of textile can therefore be coated using the apparatus. Additionally, the present invention includes a method to uniformly coat a substrate, such as a hydrophobic textile material, using aqueous solutions of polyelectrolytes.

Abstract: A method for manufacturing a semiconductor device, semiconductor production equipment, and a storage medium, which suppress abnormal arc discharge occurring when plasma is excited while preventing misalignment of a substrate placed on an electrostatic chuck, are provided. The method includes a first process in which a substrate is placed on an electrostatic chuck in a reaction container and a first electrostatic chuck voltage is applied to the electrostatic chuck to absorb the substrate onto the electrostatic chuck, a second process in which the first electrostatic chuck voltage is reduced to a second electrostatic chuck voltage, a third process in which a high-frequency voltage is applied between parallel plate electrodes in the reaction container to generate plasma, and a fourth process in which the second electrostatic chuck voltage is changed to a third electrostatic chuck voltage higher than the second electrostatic chuck voltage.

Abstract: In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.

Abstract: A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to be delivered, and a controller connected to the valves, the pressure transducer and the input device. The controller is programmed to receive the desired mass from the input device, close the second valve and open the first valve, receive chamber pressure measurements from the pressure transducer, and close the inlet valve when pressure within the chamber reaches a predetermined level. The controller is then programmed to wait a predetermined waiting period to allow the gas inside the chamber to approach a state of equilibrium, then open the outlet valve at time=t0, and close the outlet valve at time=t* when the mass of gas discharged equals the desired mass.

Abstract: A system for delivering pulses of a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber. A controller is programmed to receive the desired mass for each pulse through an input interface, close the second valve and open the first valve, receive chamber pressure measurements from a pressure transducer, and close the first valve when pressure within the chamber rises to a predetermined upper level. The controller is also programmed to deliver pulses of gas using just the second valve, wherein, for each pulse, the second valve is opened until a calculated mass for the pulse equals the desired mass for the pulse. The first valve is not required to be opened and closed for each pulse and is, therefore, used less frequently and has an extended life.

Abstract: A method for operating one or more plasma processes in a plasma chamber, with at least two power supplies, the method comprising the following process steps: a. carrying out an arc detection for at least one of the power supplies; b. generating at least one signal relating to the arc detection and/or data relating to the arc detection; transferring the at least one signal and/or the data to a plasma process-regulating device and/or to one or more other power supplies or to one or more of the arc diverter devices associated with the other power supplies.

Abstract: The present invention is a coating treatment method of applying a coating solution containing an organic solvent onto a substrate, the method including: a first step of supplying a treatment solution having a first surface tension to a central portion of the substrate; a second step of supplying a solvent for the coating solution to a central portion of the treatment solution supplied in the first step, the solvent having a second surface tension lower than the first surface tension; and a third step of supplying the coating solution to a central portion of the solvent supplied in the second step while rotating the substrate to diffuse the treatment solution and the solvent on the substrate to thereby diffuse the coating solution on an entire surface of the substrate.