Abstract: A precursor delivery system for an irradiation beam instrument includes an injection tube for injecting gasses into the instrument vacuum chamber and a main gas line having an inlet and an outlet. The outlet is connected to the injection tube, and the inlet is connected to a sequential pair of valves connected to a carrier gas source. A crucible for holding precursor material is selectively connected to the main gas line at a location between the pair of valves and the injection tube. The source of carrier gas may be selectively connected to the inlet by sequential operation of the pair of carrier gas valves, so that pulses of carrier gas assist the flow of precursor material to the injection tube. Rapid purging of the system between precursors is enabled by a valve selectively connecting the main line to an envelope in communication with the instrument vacuum.

Abstract: Developed is high-efficiency synthesis method and apparatus capable of promoting the initial growth of carbon nanostructure by eliminating the initial fluctuation time and rising time in raw gas flow quantity.-A high-efficiency synthesis method of carbon nanostructure according to the present invention is a high-efficiency synthesis method of carbon nanostructure, the method comprising: bringing raw material gas and a catalyst into contact with each other under reactive conditions so as to produce a carbon nanostructure, wherein: the initiation of contact of the raw material gas with the catalyst is carried out instantaneously. Reaction conditions such as temperature and raw material gas concentration are set so as to meet those for catalyst growth, and under the reaction conditions, the initiation of contact of raw material gas G with catalyst 6 is carried out instantaneously.

Abstract: A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride.

Abstract: An apparatus for etching features in an etch layer is provided. A plasma processing chamber is provided, comprising a chamber wall, a chuck, a pressure regulator, an electrode or coil, a gas inlet, and a gas outlet. A gas source comprises a fluorine free deposition gas source and an etch gas source. A controller comprises at least one processor and computer readable media, comprising computer readable code for providing a conditioning for a patterned pseudo-hardmask, wherein the conditioning comprises computer readable code providing a fluorine free deposition gas comprising a hydrocarbon gas, computer readable code for forming a plasma, computer readable code for providing a bias less than 500 volts, and computer readable code for forming a deposition on top of the patterned pseudo-hardmask, computer readable code for etching the etch layer, and computer readable code for cyclically repeating the conditioning and etching at least twice.

Abstract: A coating powder feed method, coating powder feeding device, electrostatic powder spraycoating apparatus containing such a coating powder feeding device. The invention includes a dense phase powder pump fitted with at least one feed chamber. A control signal to create a partial vacuum in the feed chamber is generated no earlier than simultaneously with, preferably by a predetermined delay time after, a control signal opening a powder intake valve of the feed chamber, as a result of which the beginning of partial vacuum buildup in the feed chamber shall take place no earlier than simultaneously with the initial opening of the powder intake valve or by a defined time delay after the opening of the powder intake valve.

Abstract: A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.

Abstract: A substrate processing apparatus is disclosed equipped with a transfer mechanism that transfers a substrate processed at a processing block to a carrier so that the increase of the number of transfer process is suppressed, improving the processing efficiency. The substrate processing apparatus is configured in such a way that, when a second-transfer module houses at least one substrate and a carrier that can house the at least one substrate is not placed in a carrier-placement unit, the at least one substrate is transferred to a buffer module. When the second transfer module houses at least one substrate and the carrier that can house the at least one substrate is placed in the carrier-placement unit, the at least one substrate is transferred to the carrier, regardless of whether or not a substrate is being transferred from the buffer module to the carrier.

Abstract: A coating/developing device includes a processing block having a plurality of coating unit blocks stacked and a developing unit block stacked on the coating unit blocks. Each of the unit blocks is provided with a liquid processing unit for coating a liquid chemical on a substrate, a heating unit for heating the substrate, a cooling unit for cooling the substrate and a transfer unit for transferring the substrate between the units. The liquid processing unit is provided with a coating unit for coating a resist liquid on the substrate, a first bottom antireflection coating (BARC) forming unit for coating a liquid chemical for a BARC on the substrate before the resist liquid is coated thereon, and a second BARC forming unit for coating a liquid chemical for the BARC on the substrate after the resist liquid is coated thereon.

Abstract: Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.

Abstract: The present invention is directed to techniques for fabricating solar cells that feature annealing of a substrate and subsequent formation of a combination passivation and antireflective layer in superimposition with a p-n junction formed on the substrate by introductions of impurities. It was determined that the time and cost for manufacture may be reduced by annealing the substrate before formation of the combination layer and maintaining the temperature proximate to the annealing temperature. To that end, upon completion of the anneal process the temperature of the substrate is maintained within an acceptable temperature range to reduce the time required for the substrate to reach temperature for formation of the combination layer. The combination layer is then formed without undue delay using plasma deposition processes.

Abstract: A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

Abstract: A precursor delivery system for an irradiation beam instrument includes an injection tube for injecting gasses into the instrument vacuum chamber and a main gas line having an inlet and an outlet. The outlet is connected to the injection tube, and the inlet is connected to a sequential pair of valves connected to a carrier gas source. A crucible for holding precursor material is selectively connected to the main gas line at a location between the pair of valves and the injection tube. The source of carrier gas may be selectively connected to the inlet by sequential operation of the pair of carrier gas valves, so that pulses of carrier gas assist the flow of precursor material to the injection tube. Rapid purging of the system between precursors is enabled by a valve selectively connecting the main line to an envelope in communication with the instrument vacuum.

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: A dual section module with mass flow controllers, for processing wafers, includes: dual process sections integrated together; at least one mass flow controller (MFC) each shared by the dual process sections and provided in a gas line branching into two gas lines, at a branching point, connected to the respective interiors of the dual process sections and arranged symmetrically between the dual process sections; and at least one mass flow controller (MFC) each unshared by the dual process sections and provided in a gas line connected to the interior of each dual process section.

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

Abstract: The present invention concerns a system and device for self-tanning of the type comprising a booth (2) in which two lateral walls (5) have one or more lamps (52) protected by gratings (51) arranged to warm the area inside the booth and to radiate the skin of a person in the booth. The booth is provided with a spraying device (11) for nebulizing a tanning substance. The device comprises a Second control panel (6) connected to a means of management envisaged for activating and governing the diverse functions of the device under the control of an operator or of a user. The system comprises a series of operative phases which envisage, for a person who undergoes a self-tanning session: entering the booth; pressing start on the control panel; the lamps switching on for a preset time and switching off; a tanning solution being sprayed, followed by the lamps being switched on a second time to dry the tanning solution; the lamps being switched off; the person leaving the booth.

Abstract: There are provided a substrate processing apparatus and a reaction tube for processing a substrate. The substrate processing apparatus comprises a process chamber configured to accommodate a substrate and process the substrate, a heater configured to heat the substrate, a gas supply part configured to supply a gas to an inside of the process chamber, a quartz reaction tube installed in the alloy reaction tube and a purge gas supply part configured to supply a purge gas to a gap formed between the alloy reaction tube and the quartz reaction tube. The process chamber comprises an alloy reaction tube made of a material comprising at least molybdenum (Mo) and cobalt (Co) and excluding aluminum (Al).

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.

Abstract: In a conditioning method conditions interiors of a plurality of process chambers of a substrate processing apparatus, conditioning of the interior of the first process chamber is performed if a first integrated value set in connection with the process of the substrate reaches a set value N1. The second process chamber is set in a standby state when the conditioning of the first process chamber starts and the series of processes is stopped. By determining whether a second integrated value set in connection with process of the substrate in the second process chamber is equal to or greater than a set value N2, count of a third integrated value in the second process chamber is started if the second integrated value is equal to or greater than the set value N2. A conditioning of the second process chamber is performed if the third integrated value exceeds a set value N3.

Abstract: A substrate transfer system to reduce total processing time by transferring a substrate at a first delivery stage to a process block where processing can be carried out earliest. The substrate processing apparatus includes a first transfer device delivering a wafer with respect to a substrate carrier, and a second transfer device delivering a wafer between a plurality of process blocks and the first transfer device via a first delivery stage, to transfer the wafer with respect to the process blocks. The process block where there is no wafer or where processing of the last wafer within the relevant process block will be completed earliest is determined based on processing information of the wafers from the process blocks, and the wafer of the first delivery stage is transferred by the second transfer device to the relevant process block. This ensures smooth transfer of the wafer to the process block.

Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: Fluid ejection apparatuses and processes for making the same are disclosed. An apparatus for ejecting fluid droplets includes a substrate having a plurality of flow paths formed therein, each flow path including a respective pumping chamber and a respective nozzle, and the respective nozzle being configured to eject fluid droplets through a first surface of the substrate in response to actuation of the respective pumping chamber; and an actuation assembly including a drive electrode layer over a second surface of the substrate opposite to the first surface, a piezoelectric layer over the drive electrode layer, and a reference electrode layer over the piezoelectric layer, the drive electrode layer being patterned to define an individually controllable drive electrode over each of two or more pumping chambers in the substrate, and the reference electrode layer including a continuous reference electrode spanning the two or more pumping chambers in the substrate.

Abstract: A substrate processing method comprises: an execution step of executing the first processing for the plurality of substrates, and executing the second processing for the substrates having undergone the first processing; a recovery step of recovering the plurality of substrates having undergone the first processing and the second processing to the retraction chamber; a conditioning step of, after completion of the first processing for the last substrate among the plurality of substrates, loading a dummy substrate into the first processing chamber, executing the third processing for the dummy substrate, and unloading the dummy substrate from the first processing chamber; and a second execution step of, after the dummy substrate is unloaded from the first processing chamber in the conditioning step, loading the substrates recovered in the recovery step into the first processing chamber, and executing the third processing for the substrates loaded into the first processing chamber.

Abstract: A three-dimensional modeling device, including: a stage having a powder material deposited thereon for lamination; a supply mechanism supplying the powder material for each one layer on the stage; a plurality of heads having a plurality of nozzles ejecting a liquid for formation of a model, respectively, and capable of ejecting the liquid to the powder material supplied onto the stage by the supply mechanism; and a moving mechanism moving the plurality of heads in different directions relative to the stage, respectively.

Abstract: A system for coating to tablets or other articles includes an elongate pan for retaining a bed of articles, a coating discharge system comprising a plurality of individually-controlled spray zones located linearly along said pan, and a means for distributing said articles along the pan wherein the full surface of all of said articles is exposed to said spray. A controller is programmed to operate the system to initiate a batch mode start-up sequence to coat an initial load of articles, a continuous, or a shut-down sequence, by controlling the dispensing of coating fluid on a zonal basis, and optionally controlling the distribution of articles in the pan and their discharge by controlling the effective height of a weir and the degree of tilt of the system.

Abstract: A method of making an organ or tissue comprises: (a) providing a first dispenser containing a structural support polymer and a second dispenser containing a live cell-containing composition; (b) depositing a layer on said support from said first and second dispenser, said layer comprising a structural support polymer and said cell-containing composition; and then (c) iteratively repeating said depositing step a plurality of times to form a plurality of layers one on another, with separate and discrete regions in each of said layers comprising one or the other of said support polymer or said cell-containing composition, to thereby produce provide a composite three dimensional structure containing both structural support regions and cell-containing regions. Apparatus for carrying out the method and composite products produced by the method are also described.

Abstract: A device for applying an even, thin fluid layer, in particular a phosphoric acid layer, onto substrates, in particular silicon cells for photovoltaic application, is provided with a process chamber, which is provided with a fluid pan and a high-frequency ultrasound device that converts the fluid into fluid mist, and with a transport device that is arranged beneath a fluid-mist dropping shaft of the process chamber for the substrates.

Abstract: Provided is a substrate processing apparatus in which after a module is disabled, a substrate is provided to a carry-in module capable of placing the wafers most rapidly in the plurality of unit blocks and the substrates are sequentially transported to the module group by the transportation means to be delivered to the carry-out module according to a providing sequence of the substrate to the carry-in module in each of the plurality of unit blocks. In particular, the substrates are extracted from the carry-out module according to a providing sequence of the substrate to the carry-in module and transported to a rear module or a substrate placing part. Thereafter, the substrates are transported to the rear module from the carry-out module or the substrate placing part according to a predetermined sequence in which the substrate is provided to the carry-in module in a normal state.

Abstract: A pumping and valve control device can be used in an atomic layer deposition system.

Abstract: A liquid-ejecting apparatus includes a liquid container that contains a liquid containing a substance that can settles, and a vessel that is connected to the liquid container with a tube and receives the liquid from the liquid container. An ejecting head is connected to the vessel. The ejecting head receives the liquid from the vessel and ejects the liquid. The liquid-ejecting apparatus includes also an agitation unit that agitates the liquid in the vessel, and a control unit that controls a first operation that ejects the liquid from the ejecting head and a second operation that causes the agitation unit to agitate the liquid after the first operation.

Abstract: An apparatus and method for producing a coated analytic substrate using a compact and portable automated instrument located in the laboratory setting at the point of use which can consistently produce one or a plurality of coated analytic substrates “on demand” for using the analytic substrate immediately after coating, preferably without a step of rinsing the coated analytic substrate before use. The apparatus preferably uses applicator cartridges having a reservoir containing the coating compositions used to form the coatings. Preferably the cartridges are removable and interchangeable to facilitate the production of individual analytic substrates having different coatings or different coating patterns. These coated analytic substrates have superior specimen adhesion characteristics due to the improved quality of the coatings applied by the coating apparatus and due to the quickness with which the coated analytic substrates can be used in the lab after production.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps.

Abstract: A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided.

Abstract: An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.

Abstract: Multi-zone, solar cell diffusion furnaces having a plurality of radiant element (SiC) or/and high intensity IR lamp heated process zones, including baffle, ramp-up, firing, soaking and cooling zone(s). The transport of solar cell wafers, e.g., silicon, selenium, germanium or gallium-based solar cell wafers, through the furnace is implemented by use of an ultra low-mass, wafer transport system comprising laterally spaced shielded metal bands or chains carrying non-rotating alumina tubes suspended on wires between them. The wafers rest on raised circumferential standoffs spaced laterally along the alumina tubes, which reduces contamination. The bands or chains are driven synchronously at ultra-low tension by a pin drive roller or sprocket at either the inlet or outlet end of the furnace, with appropriate tensioning systems disposed in the return path. The high intensity IR flux rapidly photo-radiation conditions the wafers so that diffusion occurs >3× faster than conventional high-mass thermal furnaces.

Abstract: Apparatus for treating and/or coating the surface of substrate components by deposition from the gas phase. A plurality of substrate carriers and a plurality of coating and/or treating units are arranged in a deposition or treatment chamber which can be evacuated. The system can be equipped in a modular fashion such that the substrate components introduced into the system in a batch can be subjected to different treatments. Method for treating and/or coating the surface of substrate components. The procedure comprises: a) compiling coating and/or treating units and shielding elements from modules in the deposition or treatment chamber; b) equipping the substrate carriers with those substrate components that are to be subjected to the same treatment; c) closing the deposition or treatment chamber; and d) carrying out the individual treatment or coating programs for the substrate components combined in groups on the substrate carriers in one batch.

Abstract: A substrate processing apparatus is disclosed equipped with a transfer mechanism that transfers a substrate processed at a processing block to a carrier so that the increase of the number of transfer process is suppressed, improving the processing efficiency. The substrate processing apparatus is configured in such a way that, when a second-transfer module houses at least one substrate and a carrier that can house the at least one substrate is not placed in a carrier-placement unit, the at least one substrate is transferred to a buffer module. When the second transfer module houses at least one substrate and the carrier that can house the at least one substrate is placed in the carrier-placement unit, the at least one substrate is transferred to the carrier, regardless of whether or not a substrate is being transferred from the buffer module to the carrier.

Abstract: Control method and apparatus for a manual spray gun includes display that is disposed on the spray gun and that provides information to an operator about one or more coating operation parameters. An auxiliary trigger may be used that enables an operator to make selections or changes of one or more coating operation parameters. The display and auxiliary trigger together permit an operator to make selections or changes without having to divert attention or field of view away from the spray gun or the coating area, especially during a coating operation. The display may include numeric information, for example, data relating to a coating function being displayed.

Abstract: A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate (10) in reactor (1); and unloading the substrate (10) after film formation from the reactor (1) and thereafter effecting forced air cooling of the interior of the reactor (1) while the substrate (10) is absent in the reactor (1). The stress of deposited film adhering in the reactor (1) is increased over that exhibited at air cooling without blower so as to positively generate thermal stress with the result that the deposited film would undergo forced cracking over that exhibited at air cooling without blower. Microparticles scattered by the cracking are efficiently discharged from the reactor forcibly through purging in the reactor in the state of atmospheric pressure.

Abstract: A vacuum processing apparatus includes two process chambers and three load-lock chambers which are alternately connected in series, and a transferring device which transfers a plurality of carriers only between the process chamber and the load-lock chambers that are adjacent to each other. A substrate undergoes deposition processing when the carrier is positioned in the process chamber by the transferring device, and the substrate is replaced when the carrier is positioned in the load-lock chamber by the transferring device.

Abstract: The present invention is directed to a delivery device and a system for introducing a second component into an atomized composition. The present invention is particularly directed to a delivery device and a system for introducing a catalyst into an atomized coating composition.

Abstract: A manufacturing machine for manufacturing a wrapping paper web for cigarettes with a low ignition propensity has a coating device (3) at a coating position defined in a travel path (2) of web (W). The coating device (3) has a rotary screen (4) and a gravure roller (6) located on the opposite sides of the travel path (2) and functioning as back rollers for each other. The rotary screen (4) intermittently applies a liquid burning inhibitor onto one side of the web (W) to form a number of band layers (B) arranged at predetermined intervals in a travelling direction of the web (W), and the gravure roller (6) applies water onto the other side of the web (W) to form wet bands (A) arranged alternately with the band layers (B) in the traveling direction of the web (W).

Abstract: A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided.

Abstract: An apparatus and method of preparing and coating a large structure such as a ship's hull while in a dry dock wherein a plurality of spray guns disposed in an array are positioned by a robotic arm in a spaced relationship along the surface to be treated so that their spray patterns overlap. The array of spray guns is traversed downwardly a thus painting a strip whereupon the spray guns are secured, move horizontally and then activated to be moved upwardly until another strip adjacent to and overlapping the first strip is painted. These steps are repeated until the surface area is substantially entirely painted. A shroud is provided for collecting paint oversprays and other excess paint is mounted in the array assemblage. An auxiliary spray gun may be positioned and its spray pattern adjusted to apply paint to areas which were missed by the original spray pattern emanating from the array of spray guns.

Abstract: A tool includes a chamber, a network, a sensor, a tool controller, and a pressure controller. The network carries messages to and from devices on the network. A header portion of a message indicates a sender of the message and at least one intended recipient of the message. The sensor measures a pressure within the chamber. The sensor, tool controller, and pressure controller are on the network. The pressure controller controls the pressure within the chamber in response to measurements provided by the sensor and in response to a set point provided by the tool controller. The pressure controller processes header portions of all messages carried on the network to determine the intended recipients of each message and processes at least part of data portions of both messages intended for the pressure controller and at least some messages not intended for the pressure controller.

Abstract: A liquid crystal dispensing apparatus and a method of controlling a liquid crystal dropping amount are provided to drop liquid crystal onto a substrate corresponding to at least one unit panel area. In one aspect, the apparatus uses a liquid crystal dispensing unit to dispense liquid crystal. The liquid crystal dispensing unit includes a nozzle having a discharging hole through which the liquid crystal is dropped onto the substrate, a needle moveable between a down position in which the needle blocks the discharging hole and an up position in which the needle is separated from the discharging hole, a spring member to bias the needle toward the down position, and a solenoid coil to provide a magnetic force to move the needle to the up position. The dropping amount liquid crystal dispensing unit may be electrically controlled by controlling the solenoid coil or by controlling a gas pressure used to drive the liquid crystal through the discharging hole.