Abstract: An in situ apparatus, system, and method for cladding or repairing cladding in installed pipelines are presented. The apparatus can include a coating collar, a material reservoir, a cladding head, an adjustable cladding chamber, and a chamber controller. The coating collar can include an external surface, a first circumferential wall, and a second circumferential wall and forms the adjustable cladding chamber along with interior wall of the pipe. The coating collar can have an aperture to include and allow deployment of the cladding head through it. The cladding head can be operatively coupled with the cladding material reservoir to allow efficient deployment of the cladding material on the pipe surface. The chamber controller can be coupled with the adjustable cladding chamber to control dimensions of the chamber thus restricting and controlling the environment and enabling efficient functioning of the cladding head and limiting grain growth in applied nanoclad materials.

Abstract: Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1, . . . , S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1, . . . , S6), and that is configured to record said reference signal as a function of time and to process said reference signal.

Abstract: Condensable materials, such as but not limited to tungsten fluoride (WF6), can be used deposit films in a chemical vapor deposition (CVD) process. Described herein are methods to collect and reuse the condensable materials that are unreacted in the production process rather than treat these materials as waste. In one embodiment, when a condensable material, such as gaseous WF6, is not supplied to the CVD reactor, it is redirected to a recovery cabinet for capture.

Abstract: A method of jetting a liquid crystal includes loading a substrate on a stage, controlling a surface temperature of an inkjet head and a substrate to be a setting temperature, and jetting the liquid crystal molecules on the substrate having the setting temperature.

Abstract: An approach to refurbishing or remanufacturing an electronic device may involve exposing electrical components that are situated within an interior of the electronic device. The approach may also involve replacing one or more defective electronic components of the electronic device with one or more replacement components and applying a protective coating to at least a portion of the interior of the electronic device. The protective coating may cover the circuit board and the electronic components it carries. The protective coating may also cover at least some of the electrical connections of the electronic device. The protective coating may also be applied to the replacement component prior to reassembly. The resulting refurbished or remanufactured electronic device may thus be provided with moisture resistance to help protect the electronic device from damage caused by exposure to moisture.

Abstract: A catheter tip coating assembly includes a housing defining a fluid reservoir and having a fluid outlet configured to dispense fluid to an end of a piece of tubing. The catheter tip coating assembly includes a valve assembly carried by the housing and at least partly disposed in fluid communication with the fluid reservoir. The valve assembly is configured to receive the piece of tubing and configured to move between a first position to limit fluid communication between the fluid reservoir and the fluid outlet and a second position to provide fluid communication between the fluid reservoir and the fluid outlet to dispense fluid to the end of the piece of tubing. The assembly provides for careful control over the amount of liquid that is applied and the depth of the wetting.

Abstract: A display panel manufacturing device including a stage slider, a first stage configured to slide on the stage slider and to receive a test substrate, a second stage on the stage slider and configured to receive a main substrate, and a patterning unit located at a distance from the stage slider and configured to discharge organic drops onto the test substrate, configured to analyze patterns of the organic drops, configured to modify the patterns of the discharged organic drops according to an analysis of the patterns of the organic drops, and configured to discharge the organic drops onto the main substrate.

Abstract: A method and system for real-time, in-line measurements of thicknesses of semiconductor layers of photovoltaic devices is provided. The method and system include taking ex-situ optical data measurements after deposition of the semiconductor layers. The measurements are then used to calculate the thicknesses of the layers in real-time using optical modeling software.

Abstract: In vapour deposition applications, especially OLED mass production, where it is necessary to measure and/or control the deposition rate of evaporation sources within specific tolerances, a measurement system is adapted to use robust and accurate optical thickness measurement methods at high and low rate sources, so that the thickness of a layer deposited on a substrate can be measured and controlled. A first evaporation source (11) deposits a layer of material on a substrate (20). A mobile element (41) is provided, On which a film is deposited from a second evaporation source (12b) in a deposition location (D1). Subsequently the mobile element is conveyed to a measurement location (D2) where the thickness of the film is measured by a thickness detector (45). The measurement apparatus is arranged to control the deposition of the first evaporation source in dependence on the thickness of the film deposited on the mobile element.

Abstract: A pattern forming apparatus includes: a laser irradiation device configured to emit and direct a beam of laser light to enter a hole through an opening section thereof formed in a substrate; a light reflection device having a reflective surface configured to reflect the laser light to irradiate an inner surface of the hole with the reflected laser light, the reflective surface being arranged on a bottom of the hole to face toward the opening section; a droplet ejection device configured to eject and deposit droplets of conductive ink into the hole; and a control device configured to control the laser irradiation device to irradiate and modify the inner surface of the hole with the laser light reflected on the reflective surface, and to control the droplet ejection device to eject and deposit the droplets of the conductive ink into the hole of which the inner surface has been modified.

Abstract: There is provided a vapor phase deposition apparatus including: a reaction chamber having a susceptor with a wafer mounted thereon and depositing and growing an epitaxial thin film on the wafer; a housing having the reaction chamber disposed therein and having a window opened and closed to allow the wafer to be loaded into or unloaded from the wafer reaction chamber; and an exhaust unit discharging gas from within the housing to the outside to adjust internal pressure of the housing.

Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web. At least one layer is deposited from a mixed gallium indium source.

Abstract: An ion implant apparatus configured to measure the temperature or monitor the degradation of components in the apparatus is provided. The ion implant apparatus may include a platen configured to move in a first direction, a mask frame to hold one or more masks disposed on the platen, a first optical sensor configured to project an optical beam to a second optical sensor, and a measurement bar disposed on the mask frame, the measurement bar raised above the surface of the mask frame to interrupt the optical beam when the platen moves in the first direction.

Abstract: A method of forming microelectronic systems on a flexible substrate includes depositing (typically sequentially) on a first side of the flexible substrate at least one organic thin film layer, at least one electrode and at least one thin film encapsulation layer over the at least one organic thin film layer and the at least one electrode, wherein depositing the at least one organic thin film layer, depositing the at least one electrode and depositing the at least one thin film encapsulation layer each occur under vacuum and wherein no physical contact of the at least one organic thin film layer or the at least one electrode with another solid material occurs prior to depositing the at least one thin film encapsulation layer.

Abstract: A thin film deposition apparatus and method are disclosed. In one aspect, the deposition apparatus comprises a deposition source emitting a deposition material that is to be deposited on a surface of a substrate, a transfer unit moving the deposition source, a thickness measurement sensor measuring a thickness of the deposition material deposited on the surface of the substrate, and a transfer controller adjusting a moving speed of the transfer unit according to the thickness of the deposition material deposited on the surface of the substrate per unit of time.

Abstract: Methods for applying protective coatings to electronic devices that have already been assembled, and are in a consumer-ready or aftermarket form, are disclosed. In such a method, an electronic device may be at least partially disassembled to expose at least a portion of an interior of the electronic device. A protective coating is applied to some or all of the exposed surfaces of the electronic devices, including one or more internal surfaces, features or components of the electronic device. Thereafter, the electronic device may be reassembled. During and after reassembly, the protective coating resides internally within the electronic device. Systems for applying protective coatings to interior components of previously assembled electronic devices are also disclosed.

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

Abstract: The invention includes: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution.

Abstract: The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.

Abstract: A coating and developing system includes a cassette station, a processing station and an inspection station interposed between the cassette station and the processing station. Time for which a substrate is held uselessly in the inspection module is reduced. A substrate carrying means disposed in the inspection module places priority to transferring a substrate between the cassette station and the processing station, and transfers a substrate to an inspection module in a part of a cycle time in which a substrate carrying means disposed in the processing station carries out one carrying cycle. It is permitted to carry out a substrate from the inspection module in a skip carrying mode, in which a substrate specified by a larger ordinal numeral is carried ahead of a substrate specified by a smaller ordinal numeral. It is inhibited to carry a substrate to the inspection module in the skip carrying mode.

Abstract: A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.

Abstract: A rotary coupling for a multi-axial robot hand (19) is provided with a rotatable hand housing (20) and an output element (21) that is rotatable on said housing. The rotary coupling (62) includes connections (65, 66, 68) for the output element (21), a tool (23) and an accessory unit (30). The tool (23) and the accessory unit (30) can be rotated relative to each other, and the accessory unit (30) can be coupled to the hand housing (20) or to the tool (23) or to the output element (21) via the rotary coupling (62). The rotary coupling (62) is provided for an application device (11) which is used to apply a sealant (8) on a lock seam (7) of an add-on piece (4) of a vehicle body (3).

Abstract: A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed.

Abstract: A coating machine for applying a coating to screws is described. The coating machine has an operating space along which the screws to be coated are fed. A fixed surface is defined, which is fixed relative to the frame of the machine and is designed for abutment and positioning of the screws in the section upstream from said operating space and in said operating space.

Abstract: An engineering or constructional member comprising at least two strips bonded with an adhesive; each of the strips comprises bamboo impregnated or treated with a polymer derived from one or more furfuryl alcohol resin precursors.

Abstract: A gas supply pipe and a chemical vapor deposition (CVD) apparatus including the gas supply pipe. The gas supply pipe includes: a first pipe connected to a gas storage apparatus via a gas supply line to supply a reacting gas into a reacting furnace; and a second pipe thermally contacting the first pipe to cool the first pipe, wherein a first end of the second pipe is connected to a cooling medium supplying unit via a cooling medium line such that a cooling medium circulates inside the second pipe, and a second, opposite end of the second pipe is connected to a cooling medium collecting unit.

Abstract: The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.

Abstract: An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.

Abstract: A flux spray machine for spraying flux to printed circuit board assembly (PCBA) is provided, which comprising: a PCBA transfer track to transferring the PCBA for spraying flux, comprising an active beam and a fixed beam; a spray mechanism, a X-Y table of vertical spray mechanism comprising a longitudinal beam, a crossbeam movable on and perpendicular to the longitudinal beam, and a flux nozzle for spraying flux movably provided on the crossbeam; and a flow-controlling mechanism, comprising origin sensors and limit sensors for two different flows in two longitudinal directions of the PCBA transfer track.

Abstract: Provided are method and apparatus to nanoposition ink, the apparatus including: a substrate; a pattern index; an atomic force microscope (AMF) tip configured to form a pattern on the pattern index; a first ink reservoir including a first ink; a second ink reservoir including a second ink; a first cleaning portion configured to remove the first ink from the AMF tip; a second washing portion configured to remove the second ink from the AMF tip; a position determining portion configured to interact with the AMF tip; an electrode connection portion configured to apply a voltage to the position determining portion, in order to determine a position of the AMF tip when the AMF tip interacts with the position determining portion. The AMF tip is configured to configured to interact with the position determining portion, prior to forming the pattern using the first and second inks.

Abstract: An organic layer deposition apparatus, a method of manufacturing an organic light-emitting display apparatus by using the same, and an organic light-emitting display apparatus manufactured by the method, and more particularly, an organic layer deposition apparatus that is suitable for use in the mass production of a large substrate, that enables high-definition patterning, and that is capable of controlling a distance between a patterning slit sheet and a substrate that moves, a method of manufacturing an organic light-emitting display apparatus by using the organic layer deposition apparatus, and an organic light-emitting display apparatus manufactured by the method.

Abstract: Provided are an automatic lithium target regenerating apparatus and an automatic lithium target regenerating method, which are equipped with a measurement function of a lithium film thickness of a lithium target, and may automatically regenerate the consumed lithium target by moving a vapor deposition source to the lithium target. An automatic lithium target regenerating apparatus (106) is allowed to automatically regenerate lithium of a lithium target. The automatic lithium target regenerating apparatus (106) includes a lithium vapor deposition unit (1) for vapor-depositing the lithium on the lithium target. The lithium vapor deposition unit (1) is allowed to vapor-deposit the lithium on the lithium target by moving to the lithium target side.

Abstract: The present invention provides a method for repairing open line defect on LCD array substrate, which includes: when discovering open line defect on a pattern on LCD array substrate, identifying a repair line path of the open line on the pattern and scanning the repair line path; based on the result of scanning the repair line path, dividing the repair line path into at least two path segments and disposing corresponding coating speed for each path segment; and for each path segment, performing coating at the corresponding speed to form connected coating on the repair line path. The present invention also provides a device for repairing open line defect on LCD array substrate. As such, the present embodiment can increase success rate for repairing open lines.

Abstract: A thin film deposition apparatus and a method of depositing a thin film using the thin film deposition apparatus, the thin film deposition apparatus including a chamber having a substrate and a mask mounted therein; a deposition source, the deposition source supplying a deposition gas to the substrate; and a mask measuring unit, the mask measuring unit measuring a status of the mask within the chamber.

Abstract: A deposition amount measuring apparatus includes a plate-shaped body having a rotating shaft, a plurality of deposition amount sensors along side surfaces of the body, the deposition amount sensors being configured to measure an amount of deposition material, and a housing surrounding the body, the housing including an inflow port that exposes one of the deposition amount sensors.

Abstract: Embodiments of a probe assembly for a fluid bed reactor are disclosed. The probe assembly includes a fluid bed reactor (FBR) member, and a pressure tap comprising a wall defining a passageway within which the FBR member is located. Exemplary FBR members include, but are not limited to, a thermocouple, a seed pipe, a particle sampling line, a gas sampling line, a gas feed line, a heater, a second pressure tap, or a combination thereof. Disclosed embodiments of the probe assembly reduce or eliminate the need for support rods and rings within the fluid bed reactor, reduce component fouling within the reactor, and/or reduce product contamination.

Abstract: A process for application of alcoholic derivative on heat treated pellets for inhibition of particulate emission is provided, and the process includes weighing the amount of heat treated pellets discharged from furnaces, measuring the temperature of the heat treated pellets discharged from furnaces, applying cooling fluid on the heat treated pellets until they reach temperatures below 140° C., and spraying the alcoholic derivative on the heat treated pellets. Also provided is a first device for applying cooling fluid that is capable of calculating a dosage of cooling fluid to be applied to the heat treated pellets, a second device for applying alcoholic derivative that is capable of calculating a dosage of alcoholic derivative to be applied to the heat treated pellets already cooled, and a carrier device that continuously communicates with the first device for applying cooling fluid and with the second device for applying alcoholic derivative.

Abstract: A partial plating method capable of applying fine hard gold plating, a laser plating device capable of applying partial plating to a minute region with high positional precision, and a plated member. The partial plating method comprising plating a region to be plated by projecting a laser beam having a wavelength of 330 nm or more and 450 nm or less. A laser plating device 10 comprises a plating tank 12, a laser oscillator 14 for emitting a laser beam, a conveying device 16 for conveying a member to be plated 80, a photoelectronic sensor 18 for detecting the position of a positioning hole 82 of the member to be plated 80, and a galvanometer scanner 20 having a galvanometer mirror 22 capable of scanning the laser beam. The plated member is applied with fine spot plating by the laser plating device 10.

Abstract: A material deposition system is configured to deposit material on an electronic substrate, such as a printed circuit board. The material deposition system includes a frame, a support coupled to the frame and configured to support an electronic substrate during a deposit operation, a gantry coupled to the frame, and two deposition heads coupled to the gantry. Each deposition head includes a needle, with the deposition heads being movable over the support by movement of the gantry. The material deposition system further includes a needle cleaner assembly movable on a needle cleaner gantry, with the needle cleaner assembly being configured to clean needles of the deposition heads. The material deposition system further includes a controller configured to control the operation of the needle cleaner assembly to perform a needle cleaning operation.

Abstract: A plating apparatus 20 has a substrate holding/rotating device 110 configured to hold and rotate a substrate 2 and a plating liquid supplying device 30 configured to supply a plating liquid 35 onto the substrate 2. The plating liquid supplying device 30 has a supply tank 31 configured to store therein the plating liquid 35 to be supplied onto the substrate 2, a discharge nozzle 32 configured to discharge the plating liquid 35 onto the substrate 2 and a plating liquid supplying line 33 through which the plating liquid 35 within the supply tank 31 is supplied into the discharge nozzle 32. Further, an ammonia gas storage unit 170 is connected to the supply tank 31, and a concentration of an ammonia component within the plating liquid 35 stored in the supply tank 31 can be maintained within a preset target range.

Abstract: In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.

Abstract: A reactor assembly having a plurality of reaction chambers defined therein is provided. The reactor assembly includes conductive leads that mate with contacts disposed on a substrate being combinatorially processed. The conductive leads may be disposed within walls of the reactor assembly so that one end of the lead mates with the contacts on the substrate or anywhere on the surface of a conductive blanket substrate, while the other end of the lead enables communication with an external monitoring or control device.

Abstract: The present disclosure describes a method and apparatus for detecting particles in a gas by saturating the gas with vapor and causing the gas to flow through a chamber with walls that are at a temperature different than the temperature of the entering gas creating a gas turbulence within the chamber resulting in the gas becoming super-saturated with vapor and causing said super-saturated vapor to condense on said particles and form droplets, which are then detected and counted by an optical light-scattering detector.

Abstract: Fanfold and/or perforated media comprising a substrate including one or more friable coatings and an overcoat covering at least a portion of the one or more friable coatings proximate to one or more associated fanfolds and/or perforations is provided, wherein the overcoat mitigates spallation of the one or more friable coatings. Methods and apparatus for making the same are also disclosed.

Abstract: Exemplary painting devices for painting components, e.g., motor vehicle bodies or parts thereof may include a multi-axis painting robot positioning an atomizer, a robot controller for controlling the painting robot, and a controls enclosure comprising the robot controller. An exemplary controls enclosure may be a load-bearing column that mechanically supports the painting robot.

Abstract: According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

Abstract: A method of manufacturing a battery electrode includes the steps of: coating an electrode paste on an electrode base material; drying the electrode paste coated on the electrode base material in a drying furnace; measuring a radiation heat of the electrode paste during drying with a radiation heat meter; and determining a dried state of the electrode paste during drying based on the measured radiation heat.

Abstract: A linear evaporation source is disclosed. In one aspect, the source includes a crucible storing an evaporated material, a heater unit surrounding the crucible and heating the crucible, and a plurality of lateral reflectors surrounding a lateral surface of the heater unit. Each of the lateral reflectors includes a first reflector combined with the heater unit while being spaced apart from the heater unit and having a plurality of first openings and a second reflector movably combined with the first reflector and having a second opening. Open ratios of the lateral reflectors are independently adjusted to control a temperature of the crucible according to areas of the crucible. Thus, deposition uniformity of the linear evaporation source is enhanced.

Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.