Abstract: A method for controlling the internal pressure of a photovoltaic module having a front plate, rear plate, photovoltaic cells, electrical interconnection conductors, and peripheral seal, in which the conductors are in pressure contact with the cells, under the effect of a force resulting from a vacuum prevailing inside the module. The method includes: a) gradually reducing the pressure of a gas quantity around the module; b) detecting, during step a), a physical parameter representative of the actual pressing of the interconnection conductors against the cells; and c) determining a value of the internal pressure of the module on the basis of a variation in the physical parameter. The control facility comprises an enclosure for receiving the module inside a gas quantity, the enclosure including elements for: reducing the pressure of this gas quantity, detecting a physical parameter representative of the actual pressing, and determining the internal pressure of the module.

Abstract: A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller.

Abstract: A system for transferring articles between an atmospheric pressure environment and a vacuum pressure environment. The system may include a vacuum enclosure having a wall separating the atmospheric pressure environment from the vacuum pressure environment. A transfer shaft may extend through the wall from the atmospheric pressure environment to the vacuum pressure environment. The transfer shaft may include an atmospheric transfer port disposed within the atmospheric pressure environment, a vacuum transfer port disposed within the vacuum pressure environment, and an intermediate port disposed adjacent a channel in the wall. The system may further include a movable transfer carriage disposed within the transfer shaft, the transfer carriage having an access port for providing access to an interior of the transfer carriage. The system may further include an air bearing on the transfer carriage configured to expel gas for maintaining a gap between the transfer carriage and the transfer shaft.

Abstract: An apparatus is described for coating a flexible substrate with at least a first organic layer and a first inorganic layer. The apparatus comprises a first and a second chamber and an atmosphere decoupling slot between the first and the second chamber. A printing facility is arranged in the first chamber, for printing the flexible substrate with a mixture comprising at least one precursor for a polymer, oligomer or a polymer network and a polymerization initiator. A curing facility is arranged in the first chamber, for curing the deposited mixture, therewith forming the at least first organic layer. A vapor deposition facility is arranged in the second chamber, for depositing the at least first inorganic layer at the substrate provided with the at least first organic layer. The apparatus comprises a facility for guiding the flexible substrate along the printing facility, along the curing facility and via the atmosphere decoupling slot along the vapor deposition facility.

Abstract: The invention relates to an apparatus for depositing thin film coatings on a substrate. The deposition apparatus is designed to keep gaseous reactant materials to be deposited apart from one another in the deposition apparatus, by one or more separation devices and/or methods, but nevertheless, to allow the chemical reactants to mix and react at or near the substrate surface, rapidly enough to create a uniform film at commercially viable deposition rates.

Abstract: The present invention provides a method for producing an organic EL element capable of shortening the film formation time while suppressing an increase in the blur width; and an organic EL display device. The method is for producing an organic EL element by scanning vapor deposition, in which one or more vapor deposition sources each are provided with ejection orifices that face the respective openings of a limiting plate, and the ejection orifices facing the same opening are spaced from each other to give a sum of distributions.

Abstract: A method is used to provide an electrically-conductive article. This method includes: forming an electrically-conductive pattern on first supporting side of a transparent substrate that also comprises an opposing second supporting side; and forming a dry outermost polymeric coating over at least part but not all of the electrically-conductive pattern, the dry polymeric coating having a dry thickness of less than 5 ?m, an integrated transmittance of at least 80%, and comprising a non-crosslinked thermoplastic polymer having a glass transition temperature (Tg) that is equal to or greater than 65° C.

Abstract: Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1, . . . , S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1, . . . , S6), and that is configured to record said reference signal as a function of time and to process said reference signal.

Abstract: A glass sheet has an electrically conductive film having a sheet resistance in the range of 9.5 to 14.0 ohms/square; an emissivity in the range of 0.14 to 0.17 and an absorption coefficient of greater than 1.5×103 cm?1 in the wavelength range of 400-1100 nanometers, and a surface roughness of less than 15 nanometers Root Means Square. A glass sheet of another embodiment of the invention has an electrically conductive film having a phosphorous-fluorine doped tin oxide pyrolytically deposited film on the surface of the glass sheet, wherein the ratio of phosphorous precursor to tin precursor is in the range of greater than 0-0.4. The coated glass sheets of the invention can be used in the manufacture of multi sheet insulating units, OLEDs and solar cells.

Abstract: A system for depositing a thin film on a flexible substrate comprises a plurality of processing zones spaced apart by an isolation zone, a plasma generator for generating a plasma region proximal to a pathway along which the substrate travels, and a substrate transport mechanism for guiding the substrate back and forth between the processing zones so that the substrate is transported past and exposed to the plasma region when the system is in use.

Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Abstract: An abrasive article including a substrate made of a wire, abrasive particles affixed to the substrate, the abrasive particles having a first coating layer overlying the abrasive particles, and a second coating layer different than the first coating layer overlying the first coating layer. The abrasive article further including a bonding layer overlying the substrate and abrasive particles.

Abstract: A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished in that at least one means for manipulation of the flow is present in a flow passage of the gas lock. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: A processing apparatus for processing a flexible substrate, particularly a vacuum processing apparatus for processing a flexible substrate, is described. The processing apparatus includes a vacuum chamber; a processing drum within the vacuum chamber, wherein the processing drum is configured to rotate around an axis extending in a first direction; and a heating device adjacent to the processing drum, wherein the heating device is configured for spreading the substrate in the first direction or for maintaining a spread of the substrate in the first direction, and wherein the heating device has a dimension in a direction parallel to a substrate transport direction of at least 20 mm.

Abstract: Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.

Abstract: A substrate processing system is provided with: a first transfer unit, which extends from a loader module to a first processing chamber for processing substrates, to transfer the substrates; and a second transfer unit, which is provided below or above the first transfer unit and extends from the loader module to a second processing chamber for processing substrates, to transfer the substrates. The first processing chamber and the second processing chamber do not overlap in the vertical direction, and are disposed at positions separated from each other in a plan view. At the same time, at least a part of the first transfer unit and at least a part of the second transfer unit overlap each other in the vertical direction.

Abstract: An area S (m2) of a facing surface of each of injectors which faces a glass ribbon is set so as to satisfy: S?(0.0116×P×Cg×T)/{?×F×?(Tgla4?Tinj4)}, wherein P is an output (ton/day) of the glass ribbon; Cg is a specific heat (J/(kg·° C.)) of the glass; T is an acceptable temperature drop (° C.); ? is radiation factor; F is a surface-to-surface view factor; ? is Boltzmann's constant; Tgla is a temperature (K) of the glass ribbon represented by K=(Tin+Tout)/2 where Tin and Tout are measured values of the glass ribbon at the inlet and outlet of the injector, respectively; and Tinj is a temperature (K) of the facing surface of the injector.

Abstract: A deposition apparatus includes an input spool located in non-vacuum input module, at least one vacuum process module, an accumulator, and an air to vacuum sealing mechanism. The accumulator and the sealing mechanism are configured to continuously provide a web substrate from the input spool at atmosphere into the at least one process module at vacuum without stopping the web substrate.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: Provided is a continuous coating apparatus which can supply a liquid coating material (a molten metal) to a levitation-heating space through various paths, and can easily control a supply flow rate of the liquid coating material, and has a simplified structure. The continuous coating apparatus includes: a vacuum chamber unit through which a coating target passes; a levitation-heating unit disposed in the vacuum chamber unit and generating an evaporation vapor by vaporizing a supplied coating material; and a liquid coating material supply unit connected so that a liquid coating material is supplied to at least one of an upper portion and a lower portion of the levitation-heating unit, and communicating with the outside of the vacuum chamber unit.

Abstract: A continuous plasma treatment process is disclosed. The process may include providing at least one plasma treatment zone having a pair of electrodes with endless dielectric belts, each belt having a first and a second side that covers one of the electrodes. The process may include producing a non-thermal plasma in a space between the belts, and transporting a web material via the belts such that there is a width of exposed belt on either side of the web material. The process may include transporting the web material such that a side of the web material not in contact with the belts is treated in two passes through the at least one plasma treatment zone, while exposed parts of the belts transporting the web material are also treated. The process may include cleaning treated parts of the belts prior to the belts re-entering the at least one plasma treatment zone.

Abstract: Embodiments of the present invention relate to apparatuses and methods for fabricating electrochemical cells. One embodiment of the present invention comprises a single chamber configurable to deposit different materials on a substrate spooled between two reels. In one embodiment, the substrate is moved in the same direction around the reels, with conditions within the chamber periodically changed to result in the continuous build-up of deposited material over time. Another embodiment employs alternating a direction of movement of the substrate around the reels, with conditions in the chamber differing with each change in direction to result in the sequential build-up of deposited material over time. The chamber is equipped with different sources of energy and materials to allow the deposition of the different layers of the electrochemical cell.

Abstract: A vaporizing device is provided, wherein an elongated pot having material to be vaporized is impinged upon by an electron beam, preferably via several electron guns. Each electron gun is responsible for a certain section of the pot. The electron beam is guided over the melt in a pendular manner. For this purpose, a first magnetic deflecting unit is provided, which produces a variable parallel displacement of the electron beam. In order to achieve this, two magnetic fields are provided, the magnetic field boundaries of which form a type of lens system, wherein the outlet side of the first magnetic field is convex and the inlet side of the second magnetic field is concave. In order to deflect the electron beam into the pot, a second magnetic deflecting unit is provided, the magnetic field of which can be moved synchronously with the beam displacement parallel to the pot.

Abstract: A coating apparatus comprises a coating chamber for coating the articles. The at least one preheat chamber is coupled to the coating chamber. The at least one loading station has a proximal end connectable to at least one of the preheat chambers when in an installed position at a distal end of the preheat chamber. The loading station further includes a carrier for carrying the articles and a drive system. The drive system is positioned to move the carrier between: a loading/unloading position of the carrier in the loading station; a preheat position of the carrier in the preheat chamber to which the loading station is connected; and a deposition position of the carrier in the coating chamber. A gas source is connected to the preheat chamber.

Abstract: Provided is a low-cost vacuum processing apparatus which enables the miniaturization of the apparatus and achieves good productivity. An elongated sheet base material is transported through a vacuum processing chamber, and predetermined processing is performed on the sheet base material in this vacuum processing chamber. The vacuum processing chamber is provided with a single processing unit, and has an auxiliary vacuum chamber provided in continuation with the vacuum processing chamber. The auxiliary vacuum chamber is provided with a feed roller and a take-up roller. The vacuum processing apparatus includes a pair of first roller units provided on opposite sides across the processing unit in the vacuum processing chamber. Each of the first roller units has multiple rollers disposed at regular distances. The rollers are deviated from each other in the axial direction and arranged in such a staggered manner that the sheet base material is helically wound around the rollers.

Abstract: A roll-to-roll rapid thermal processing (RTP) tool with multiple chambers for forming a solar cell absorber by reacting a precursor layer on a continuous flexible workpiece. The RTP tool includes an elongated housing having a heating chamber with a predetermined temperature profile, a supply chamber and a receiving chamber. The heating chamber includes a small process gap in which the precursor layer is reacted with a Group VIA material to form an absorber layer. The continuous flexible workpiece is unrolled and advanced from the supply chamber into the heating chamber, and the processed continuous flexible workpiece is taken up and rolled in the receiving chamber.

Abstract: Evaporation methods and structures for depositing a microcolumnar lanthanum halide scintillator film on a surface of a substrate. A radiation detection device including a doped lanthanum halide microcolumnar scintillator formed on a substrate.

Abstract: Apparatus and a method for depositing a material on a substrate utilizes a distributor including a permeable member through which a carrier gas and a material are passed to provide a vapor that is deposited on a conveyed substrate. A secondary gas can be provided to promote uniform distribution of the material on the substrate.

Abstract: A manufacturing method of functional film comprising the steps of: a first step of feeding a lengthy substrate with self-support including a first laminate film on a back side, forming an organic film on a front side of the substrate while transferring the substrate, providing a second laminate film on a surface of the organic film, and taking up the substrate into a film roll; and a second step of loading the film roll on a vacuum deposition apparatus, continuously feeding the substrate including the first laminate film and the second laminate film from the film roll, removing the second laminate film while transferring the substrate, forming an inorganic film over the organic film of the substrate, and taking up the substrate into a film roll.

Abstract: A method for producing a transparent gas barrier film is performed using a roll-to-roll method. The method includes laminating a plurality of thin films of two or more types having different components on a long belt-shaped resin substrate 8 while feeding the resin substrate 8, wherein a plurality of evaporation sources 91 and 92 are disposed in the thin film formation area, the number of evaporation sources being the same as the number of types of the thin films, and the long belt-shaped resin substrate 8 is passed through the thin film formation area and a non-formation area alternately, and materials included in the plurality of evaporation sources 91 and 92 are each deposited on the resin substrate 8 in the thin film formation area to form on the resin substrate 8 a transparent gas barrier layer having the plurality of laminated thin films of two or more types.

Abstract: There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism.

Abstract: A rotating type thin film deposition apparatus having an improved structure that allows continuous deposition, and a thin film deposition method used by the rotating type thin film deposition apparatus are provided. The rotating type thin film deposition apparatus includes a deposition device; a circulation running unit that runs a deposition target on a circulation track via a deposition region of the deposition device; and a support unit that supports the deposition target and moves along the circulation track. Thin layers can be precisely and uniformly formed on the entire surface of a deposition target, and since deposition is performed while a plurality of deposition targets move along a caterpillar track, a working speed is faster compared to a method involving a general reciprocating motion, and the size of the thin film deposition apparatus can be reduced.

Abstract: A vacuum film formation method for forming at least one inorganic layer on a support, which comprise transporting a support of which the area of the surface to be coated with an inorganic layer formed thereon is a (unit: cm2) into a first vacuum tank having a capacity of at most 100a (unit: cm3) under atmospheric pressure, degassing the first vacuum tank into a vacuum, transporting the support from the first vacuum tank to a second vacuum tank while the vacuum condition is kept as such, and forming at least one inorganic layer on the support in the second vacuum tank.

Abstract: The present invention relates to a method of receiving and treating a moving substrate web (110) in a reaction space of an atomic layer deposition (ALD) reactor (100) and apparatuses therefore. It also pertains to a production line that includes such a reactor. The invention comprises receiving a moving substrate web into a reaction space (150) of an atomic layer deposition reactor, providing a track for the substrate web with a repeating pattern (140) in the reaction space and exposing the reaction space to precursor pulses to deposit material on the substrate web by sequential self-saturating surface reactions. The pattern is performed by turning the direction of propagation of the substrate web a plurality of times in the reaction space. One effect of the invention is adjusting an ALD reactor to a required production line substrate web speed.

Abstract: The present invention relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga/In linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present invention, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.

Abstract: The invention allows evaporation materials discharged from evaporation sources to deposit on a substrate with a desired pattern, while eliminating the need for the conventional strip-shaped shadow mask, and enables correction of the effects due to the substrate being displaced during conveyance. In the apparatus for manufacturing an organic EL device, a first drive section rotates a roller at a specific rotational speed, thereby conveying the substrate that is in contact with the roller. This apparatus performs deposition of evaporation materials discharged from evaporation sources on the substrate with such conveyance. In this apparatus, a shielding section is driven by a second drive section so as to pivot around an axis of the roller at a specific pivot speed, thereby shielding and unshielding the substrate. The second drive section changes the pivot speed of the shielding section so that it is different from the rotational speed of the roller.

Abstract: Provided are a method and an apparatus for manufacturing an organic EL device which enable deposition of a vaporized material from an evaporation source onto a substrate in a desired pattern, while eliminating the need for a conventional strip-shaped shadow mask. A shielding portion 51 is configured to be switchable between a shield position where the shielding portion 51 is arranged between an evaporation source 4 and a substrate 81 so as to shield the substrate 81 and a shield release position where the shielding portion 51 is withdrawn from between the evaporation source 4 and the substrate 81 so as to release the shielding of the substrate 81. The shielding portion 51 is switched between the shield position and the shield release position while rotating together with a roller 3.

Abstract: A film depositing apparatus comprises: a rotatable drum within a chamber around which a substrate is wrapped in a specified surface region; a film depositing unit comprising a film depositing electrode spaced facing to a surface of the drum, and a feed gas supply section supplying a feed gas for forming a film into a gap between the drum and the film depositing electrode; and an exhaust unit that exhausts the gap between the drum and the film depositing electrode during film formation by the film depositing unit so as to forcibly discharge the feed gas, supplied into the gap by the feed gas supply section, through at least one of end portions of the gap upstream side and downstream side in a rotating direction of the drum uniformly over an entire region of the gap in a direction parallel to the axis of rotation of the drum.

Abstract: A loader device for loading porous substrates of three-dimensional shapes extending mainly in a longitudinal direction into a reaction chamber of an infiltration oven for densification of the preforms by directed flow chemical vapor infiltration. The device comprising at least one annular loader stage formed by first and second annular vertical walls arranged coaxially relative to each other and defining between them an annular loader space for the porous substrates to be densified. First and second plates respectively cover the bottom portion and the top portion of the annular loader space. The first and second annular vertical walls include support elements arranged in the annular loader space so as to define between them unit loader cells, each for receiving a respective substrate to be densified. The device also comprises gas feed orifices and gas exhaust orifices in the vicinity of each unit loader cell.

Abstract: According to the present disclosure, a substrate processing apparatus for processing a flexible substrate including a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein, a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber, and a discharging assembly configured to generate a flow of charged particles to discharge the flexible substrate is provided. The discharging assembly is configured to generate an electric field for ionizing a processing gas.

Abstract: Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or near atmospheric pressure, wherein a reverse flow of the processing gas is prevented and thus a thin film having good quality is formed by a uniform gas flow. The thin film forming apparatus is characterized by having an auxiliary gas discharge means for discharging an auxiliary gas for preventing a reverse flow of the processing gas. Also disclosed are a thin film forming method, and a thin film.

Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.

Abstract: A vapor-deposition device for coating two-dimensional substrates with an organic material. The substrates can be positioned within a vacuum chamber above a process chamber or can be moved past the latter by a transport device. A vaporizer for an organic coating material is arranged within the process chamber and opposite the substrates. The process chamber is delimited laterally by shields which, opposite the substrates, extend as far as a feed device for the coating material. The vaporizer includes the feed device for the coating material and radiant heaters underneath the same. This arrangement can achieve, with a high vaporization rate, good homogeneity of the layer thickness and of the layer stoichiometry.

Abstract: Disclosed are a method and a device for plasma treating workpieces (5). Said workpiece is inserted into a chamber (7) of a treatment station (3), which can be at least partly evacuated, and is positioned within the treatment station by means of a holding element. In order to simultaneously supply at least two chambers with at least one operating means, a flow of the operating means is branched at least once so as to form at least two partial flows (55).

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed.

Abstract: Embodiments of the invention involve a technique and process for coating fine diameter, single strand wire of long continuous lengths with Parylene. The special fixture design and process allows for ultra thin (as thin as 0.2 micron), pore free, coatings. The advantages of this technology allow for wire products that offer minimal intrusion, superior routing and winding characteristics, and high heat and chemical resistance. The coating process can also be used for other types of material.

Abstract: A passing apparatus includes: upper and lower sealing rolls dealing with variations in a thickness of a proceeding strip, the upper and lower sealing rolls allowing the strip to pass; and a strip sealing unit dealing with variations in a width of the proceeding strip, the strip sealing unit cooperating with the upper and lower sealing rolls to seal the proceeding strip passing through a chamber in a state in which the strip sealing unit surrounds the proceeding strip.

Abstract: A method for manufacturing a compound film comprising a substrate and at least one additional layer is disclosed. The method comprising the steps of depositing at least two chemical elements on the substrate and/or on the at least one additional layer using depositions sources, maintaining depositing of the at least two chemical elements while the substrate and the deposition sources are being moved relative to each other, measuring the compound film properties, particularly being compound film thickness, compound-film overall composition, and compound-film composition in one or several positions of the compound film, comparing the predefined values for the compound film properties to the measured compound film properties, and adjusting the deposition of the at least two chemical elements in case the measured compound film properties do not match the predefined compound film properties.