Abstract: A magnetic particle trapper for use in a sputtering system includes a roller cover plate having a plurality of openings arranged and dimensioned to accommodate a plurality of rollers associated with a mechanical transport mechanism of the sputtering system, and a plurality of magnets to trap magnetic particles, the plurality of magnets being attached to the roller cover plate in locations proximate to the plurality of openings.

Abstract: The plasma apparatus includes a conveying unit for conveying a substrate in a conveying direction while being situated at a processing position, an elongated electric field forming unit for forming an induction electric field by a coil, opposed to the processing position, a power supply for supplying high frequency power to the coil, an elongated gas introducing unit and a separating unit for separating a region where the forming unit is arranged and a region where the introducing unit is arranged from each other in an airtight fashion, having an elongated dielectric window arranged between the processing position and the forming unit. The forming unit, the introducing unit and the dielectric window are arranged in such a way that there longitudinal directions are matched with a width direction of the substrate being conveyed, and orthogonal to the conveying direction.

Abstract: There are provided a device for fabricating an electrode by a roll-to-roll process and a method for fabricating an electrode. The device for fabricating an electrode includes an unwinding roll and a winding roll travelling an electrode material; a film forming roll disposed between the unwinding roll and the winding roll allowing the electrode material to travel along a cylindrical surface of the film forming roll and having a cooling unit cooling the electrode material; and an evaporation unit receiving a lithium source and mounted for the received lithium source to form a thin film in the electrode material positioned on the film forming roll. Thereby, the lithium is deposited in a vacuum atmosphere such that the process is simple and the deposition rate and the deposition uniformity of lithium can be improved.

Abstract: A pinch valve includes a valve body having a slot which is configured to allow a web of substrate material to pass therethrough. The valve body has a sealing surface which includes a first curved portion with a first radius of curvature. A dynamic seal element is configured to engage the valve body and includes a second curved portion having a second radius of curvature which is larger than the first radius of curvature. An actuator is operable to selectively bias the dynamic seal element into and out of engagement with the valve body so that when it is biased into engagement with the valve body the web of substrate material is engaged between the sealing surfaces of the dynamic seal element and the valve body. Also disclosed is a processing system which includes the pinch valve.

Abstract: A method and an apparatus are proposed for simultaneously coating the inner walls of a plurality of hollow containers, such as bottles, with fluid-impermeable barrier layers applied by a PECVD method with the use of transversal antennas capable of creating plasma having density increased in the vicinity of the inner walls of the containers. The barrier-layer application period is divided into a coating period and a noncoating cooling period, with RF energy constantly maintained under working conditions with shunting thereof from the coating station to the dummy loads during noncoating periods used for cooling the plastic containers. The apparatus comprises a vacuum chamber with a conveyor that transports the containers in a preoriented state for interaction with a plurality of aligning elements that can be inserted into the container openings for subsequent fixation at equal distances in positions aligned with the antennas that can be inserted into the containers for generation of the coating-applying plasma.

Abstract: Photovoltaic elements can be formed by in-motion processing of a silicon ribbon. In some embodiments, only a single surface of a silicon ribbon is processed in-motion. In other embodiments both surfaces of a silicon ribbon is processed in-motion. In-motion processing can include, but is not limited to, formation of patterned or uniform doped regions within or along the silicon ribbon as well as the formation of patterned or uniform dielectric layers and/or electrically conductive elements on the silicon ribbon. After performing in-motion processing, additional processing steps can be performed after the ribbon is cut into portions. Furthermore, post-cut processing can include, but is not limited to, the formation of solar cells, photovoltaic modules, and solar panels.

Abstract: A method and apparatus for manufacturing superconducting tape through an integrated process, including the steps of: heat-treating a substrate wound on a drum in a reaction chamber; continuously depositing components, constituting a buffer layer, a superconducting layer, a contact resistance layer, and a protective layer of the superconducting tape, which are supplied from a deposition chamber, on the substrate; and heat-treating the substrate deposited with the components.

Abstract: An apparatus, system and method for preventing premature drying of a surface of a substrate between fabrication operations includes receiving a substrate for cleaning, performing wet cleaning operations to the surface of the substrate to remove contaminants and fabrication chemistries left behind during one or more fabrication operations from the surface of the substrate, identifying a saturated gas chemistry and applying the identified saturated gas chemistry in a transition region such that the surface of the substrate exposed to the saturated gas chemistry in the transition region retains the moisture thereby preventing the surface of the substrate from premature drying. The saturated gas chemistry is applied between two subsequent wet-cleaning operations.

Abstract: A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Abstract: An atmospheric plasma apparatus for depositing a layer on a continuous base film transported in its longitudinal direction includes an electrode for treatment provided opposite to the peripheral surface of a drum electrode and upstream of an electrode for deposition in the direction of transportation of the base film, an electric power source for treatment which applies voltages to the electrode for treatment, and a reactive gas-feeding element for feeding a reactive gas for surface treatment between the drum electrode and the electrode for treatment. The atmospheric plasma apparatus as such is capable of depositing a layer without impairing effects of surface treatment, allowing a higher adhesion between the base film and the layer deposited thereon and, consequently, an efficient, successive deposition of a high-quality layer.

Abstract: Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided which includes continuously advancing a plurality of wafers through a deposition system having at least four deposition zones. Multiple layers of materials are deposited on each wafer, such that one layer is deposited at each deposition zone. The methods provide advancing each wafer through each deposition zone while depositing a first layer from the first deposition zone, a second layer from the second deposition zone, a third layer from the third deposition zone, and a fourth layer from the fourth deposition zone. Embodiments described herein may be utilized to form an assortment of materials on wafers or substrates, especially for forming Group III/V materials on GaAs wafers.

Abstract: There are provided a graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method on the basis of a continuous process.

Abstract: A polycrystalline silicon production apparatus is provided whereby when deposited silicon is caused to drip down into an underlying collection part by heating the reaction tube inner surface at a temperature equal to or above the melting point of silicon, the silicon melt can be prevented from solidifying at a lower end portion of the reaction tube due to temperature lowering at the lower end portion. When a reaction tube is heated with a high frequency heating coil, the temperature lowering at a lower end portion of the reaction tube is prevented through temperature lowering prevention means which may be an infrared device capable of heating the outer periphery of the lower end portion by means of infrared rays, or which may be a lower end coil that is constituted by a coil near the lower end of the high frequency heating coil and has an increased heating intensity relative to an upper coil.

Abstract: The present invention relates to an apparatus and method for coating carbon nano tubes, which is capable of coating carbon nano tubes on a film at the same time when the carbon nano tubes are produced, unlike a wet method, thereby reducing the number of processes and costs and improving performance. The apparatus and method has an advantage of directly applying a CNT-containing gas obtained by thermal chemical vapor deposition to a film to obtain a CNT coating film with the reduced numbers of processes and high quality through improvement of an electrical property by maintenance of dispersibility and CNT length, as compared to a conventional wet process.

Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web. At least one layer is deposited from a mixed gallium indium source.

Abstract: The present invention provides a film forming apparatus and a film forming method realizing improvement in the degree of freedom in film formation while suppressing production cost. While conveying a base material by using a plurality of guide rolls, film formation is performed by atomic layer deposition by outputting precursor gases to the base material by a plurality of ALD heads. The ALD heads are disposed so as to individually face the guide rolls so that the precursor gases are locally output to the base material. The amount of the precursor gases used is reduced more than that in a related art, and the variety of kinds of the usable precursor gases is widened.

Abstract: Apparatuses and methods for depositing materials on both side of a web while it passes a substantially vertical direction are provided. In particular embodiments, a web does not contact any hardware components during the deposition. A web may be supported before and after the deposition chamber but not inside the deposition chamber. At such support points, the web may be exposed to different conditions (e.g., temperature) than during the deposition.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: A method and an apparatus of the present invention is used for the high-rate deposition of materials, such as carbon, silicon, metals, metal oxides, and the like, onto a metal substrate defined by a metal tape. The particles of the material are mixed with fluid and are injected against the metal tape at a high pressure and high velocity. The particles of the material form a current collection surface of the metal tape. The metal tape is used as cathode or anode combined with a separator to form a fuel cell of a secondary battery, metal-ceramic membranes, film composite metal-ceramic materials for electronic devices.

Abstract: Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in one or more steps in a VIA environment.

Abstract: An object is to provide a film deposition apparatus in which the amount of leakage from the outside of the chamber to the inside of the chamber is reduced. Even if leakage occurs from the outside of the chamber to the inside of the chamber, oxygen and nitrogen included in an atmosphere that surrounds the outer wall of the chamber are reduced as much as possible and the atmosphere is filled with a noble gas or hydrogen, whereby the inside of the chamber is kept cleaner at 1/100 or less, preferably, 1/1000 or less of oxygen concentration and nitrogen concentration than those in the air. Since the space with high airtightness is provided adjacent to the outside of the chamber, the chamber is covered with a bag and a high-purity argon gas is supplied to the bag.

Abstract: In a measurement mechanism for continuously measuring a thickness of a coating layer, provided in an apparatus for forming the coating layer on a conductive elongate base material in a coating treatment base station while the base material is fed, a sensing portion for measuring a capacitance value of the coating layer is arranged before and after the base station, and tension applied to the base material at the sensing portion is set to be greater than tension applied to the base material at the base station. Thus, in forming the coating layer on the elongate base material while the base material is continuously fed, variation in a feeding speed is suppressed, influence of sway of a measurement surface in a direction of thickness at the thickness sensing portion during feeding is minimized, and a thickness of the coating layer can be measured with higher accuracy.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: The invention relates to a sealing lock, for an in vacuo chamber for deposition on a, preferably metallic, endless strip, characterized in that: the metal rollers are mounted on brackets, fixed to the covers and are immovable like the latter, the rollers of the same pair have the axes thereof arranged in the same vertical plane and are of different diameter, the position of the roller with the smaller diameter being alternated up and down on passing from a given pair to the next pair, the support cradles for the two rollers of the same pair have a lateral projection towards the center, the spacing of which with regard to the base for said rollers defines a second gap.

Abstract: Materials and devices are provided for high-throughput printing of nanostructured semiconductor precursor layer. In one embodiment, a material is provided that comprises of a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA. The microflakes may be created by milling precursor particles characterized by a precursor composition that provides sufficient malleability to form a planar shape from a non-planar starting shape when milled, and wherein overall amounts of elements from Groups IB, IIIA and/or VIA contained in the precursor particles combined are at a desired stoichiometric ratio of the elements. It should also be understood that other flakes such as but not limited to nanoflakes may also be used to form the precursor material.

Abstract: A coating apparatus includes non-orthogonal coater geometry to improve coatings on a glass ribbon, and to improve yields of such coatings. The apparatus includes a first arrangement to move the ribbon along a first imaginary straight line through a coating zone provided in a glass forming chamber. The coater has a coating nozzle and an exhaust slot, each have a longitudinal axis. The coating nozzle directs coating vapors toward the coating zone, and the exhaust slot removes vapors from the coating zone. A second arrangement mounts the coater in spaced relation to the path with the coating nozzle and the exhaust slot facing the coating zone. A second imaginary straight line is normal to the longitudinal axis of the coating nozzle, and the first imaginary line and the second imaginary line subtend an angle in the range of greater than zero degrees to 90 degrees.

Abstract: A film forming apparatus including a film forming chamber which forms a film, a jetting mechanism which jets aerosol containing material particles onto a substrate in the film forming chamber, a measuring chamber communicating with the film forming chamber, a measuring mechanism which measures a thickness of the film in the measuring chamber, a pressure adjusting mechanism which controls an internal pressure of the film forming chamber and the measuring chamber, a conveyor which transports the substrate between the film forming chamber and the measuring chamber, and a blocking section which blocks a communication between the film forming chamber and the measuring chamber. Accordingly, inside of the measuring chamber is maintained clean without being polluted with the aerosol, and the measurement precision can be maintained. In the film forming process, the film thickness can be easily and precisely measured, and fed back to the film forming condition.

Abstract: Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment.

Abstract: The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33, 34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37).

Abstract: The plasma CVD apparatus of the present invention comprises a pair of deposition rolls 2 and 3 disposed oppositely in parallel so that a substrate S wound thereon faces each other; a magnetic field generating member 12 and 13 provided inside each of the deposition rolls 2 and 3, which generates a magnetic field so as to converge plasma to the vicinity of a roll surface thereof facing a space 5 between the deposition rolls; a plasma power source 14 with polarity alternately reversing between one electrode and the other electrode; a gas supply pipe 8 for supplying a film-forming gas to the space 5; and evacuation means for evacuating the space. One electrode of the plasma power source 14 is connected to one deposition roll 2, and the other electrode thereof to the other deposition roll 3.

Abstract: The present invention provides apparatus and methods for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom. In some embodiments, an interior-flow substrate includes a porous surface and one or more interior passages that provide reactant gas to an interior portion of a densely packed nanotube forest as it is growing. In some embodiments, a continuous-growth furnace is provided that includes an access port for removing nanotube forests without cooling the furnace substantially. In other embodiments, a nanotube film can be pulled from the nanotube forest without removing the forest from the furnace. A nanotube film loom is described. An apparatus for building layers of nanotube films on a continuous web is described.

Abstract: A vapor deposition apparatus includes: a vacuum tank; an exhaust section that performs vacuum exhaust in the vacuum tank; a vapor deposition source disposed in the vacuum tank to vaporize a deposition material; and a traveling path for allowing an elongated substrate on which the deposition material is deposited to travel along a concave path with respect to the vapor deposition source at least in a region opposing the vapor deposition source.

Abstract: A film deposition method comprises the steps of: transporting on a given transport path a long length of flexible film passed over a surface of a drum that is rotatably provided in a chamber evacuated to a given degree of vacuum; applying a radio-frequency voltage to a film deposition space created between a film deposition electrode and the surface of the drum to generate an electric field in the film deposition space; supplying a feed gas for film deposition into the film deposition space; and limiting an area where the feed gas is supplied so that an area where the electric field is generated in the film deposition space is large enough to cover the area where the feed gas is supplied.

Abstract: Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very little of the thermal budget, such that the process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake, particularly in combination with low temperature plasma cleaning and low temperature wafer loading prior to the bake, and deposition after the bake at temperatures lower than conventional epitaxial deposition. The process enables epitaxial deposition of silicon-containing layers over semiconductor surfaces, particularly enabling epitaxial deposition over a silicon germanium base layer. By use of a low-temperature bake, the silicon germanium base layer can be cleaned to facilitate further epitaxial deposition without relaxing the strained crystal structure of the silicon germanium.

Abstract: A carbon nanotube (CNT) extrusion system includes a carbon source, an extrusion die having a baseplate having a plurality of die sets, each die set has a plurality of through-holes in fluid communication with the carbon source and a corresponding plurality of template tubes connected at one end to the baseplate and coaxial with the through-holes, each template tube includes a catalyst for forming a CNT structure in combination with the carbon source. An oscillating mechanism operatively associated with the free end of each template tube axially oscillates the template tubes to alternately form and release the CNT structure within each template tube in a continuous manner. The oscillating mechanism can be an alternating electric field or magnetic field applied to the template tubes, the frequency of the electric or magnetic field being synchronized with a formation rate of the CNT within the template tubes.

Abstract: An apparatus for performing simultaneous pass-by vapor deposition of a uniform thickness thin film of a lubricant on at least one surface of each of a plurality of substrates. The apparatus includes a (a) chamber member having an interior space adapted to be maintained at a reduced pressure below atmospheric pressure; (b) at least one linearly extending vapor source member for supplying the interior space of the chamber with at least one linearly extending stream of lubricant vapor; (c) a substrate/workpiece mounting/supporting member adapted for supporting thereon a plurality of substrates/workpieces; and (d) a transporter/conveyor member for continuously moving the substrate/workpiece mounting/supporting member transversely past the at least one linearly extending stream of lubricant vapor for depositing a uniform thickness thin film of lubricant on the surfaces of each of a plurality of substrates/workpieces carried by the substrate/workpiece mounting/supporting member.

Abstract: A system to continuously produce fully carbonized or graphitized carbon fibers using microwave-assisted plasma (MAP) processing comprises an elongated chamber in which a microwave plasma is excited in a selected gas atmosphere. Fiber is drawn continuously through the chamber, entering and exiting through openings designed to minimize in-leakage of air. There is a gradient of microwave power within the chamber with generally higher power near where the fiber exits and lower power near where the fiber enters. Polyacrylonitrile (PAN), pitch, or any other suitable organic/polymeric precursor fibers can be used as a feedstock for the inventive system. Oxidized or partially oxidized PAN or pitch or other polymeric fiber precursors are run continuously through a MAP reactor in an inert, non-oxidizing atmosphere to heat the fibers, drive off the unwanted elements such as oxygen, nitrogen, and hydrogen, and produce carbon or graphite fibers faster than conventionally produced carbon fibers.

Abstract: A furnace for drawing an optical fiber includes a body having an upper and lower openings for supplying a preform and discharging a drawn optical fiber, a heating unit installed in the body for receiving and melting the preform, an atmosphere blocking tube installed to the lower opening for discharging the drawn optical fiber and blocking the optical fiber from the atmosphere, an upper introduction port formed at an upper portion of the body for introducing an inert gas toward the preform and partially discharged outside through a gap between the preform and the upper opening, a central and lower introduction ports formed at central and lower portions for introducing an inert gas into the body, a first flow guiding means for guiding the inert gas introduced through the central introduction port upward and then flowed down along a surface of the preform, and a second flow guiding means for guiding the inert gas introduced through the lower introduction port upward and then discharged outside through the atmosp

Abstract: The invention relates to a method and a device for the coating of running substrates (25) moving along a run direction through a treatment zone (6), in which the vapour of a coating material is generated in a chamber (5), this vapour passing through a treatment aperture towards the treatment zone (6) where the coating material condenses on the surface of the substrates (25). The vapour flow through the treatment aperture is controlled by adjusting the extent to which the treatment aperture is shut off by at least one shutter (13), between an open position, in which said vapour flows through the treatment aperture towards the treatment zone (6), and a closed position, in which the vapour is prevented from flowing towards the treatment zone (6) through the treatment aperture.

Abstract: An apparatus having at least one carbon nanotube growth zone having a substrate inlet sized to allow a spoolable length substrate to pass therethrough. The apparatus also has at least one heater in thermal communication with the carbon nanotube growth zone. The apparatus has at least one feed gas inlet in fluid communication with the carbon nanotube growth zone. The apparatus is open to an atmospheric environment during operation.

Abstract: The invention relates to a method and an apparatus for the treatment of substrates, in particular for the coating of plastic containers on a rotary installation. A plurality of treatment devices are arranged on the rotor and pass through a plurality of process phases as a function of their angle position on the rotor. For at least one process phase, the angle position can be set variably as a function of the current rotational speed of the rotor.

Abstract: A device for treating a web material in a continuous plasma enhanced process includes a vacuum chamber (1) with device (2) for maintaining a constant reduced pressure within the chamber (1) and, arranged within the chamber (1), a rotating drum (3) for supporting and transporting the web (4), a magnetron device facing the web (4) supported and transported by the drum (3) and a gas supply device for supplying a process gas or process gas mixture to the space (10) between the drum and the magnetron device in which space (10) the plasma is sustained. The magnetron device has a plurality of independent magnetron electrodes (6) with rectangular magnetron faces arranged beside each other in parallel. Each magnetron electrode (6) is individually powered with an alternating voltage by its own power supply (7). The drum (3) is electrically grounded, floating or negatively biased.

Abstract: An evaporation system for forming evaporation films on a substrate film, includes: a first drive portion which is driven to rotate to thereby feed out the substrate film; a second drive portion which is driven to rotate to thereby take up the substrate film conveyed to the second drive portion; film-forming rollers which are provided on a conveyance path of the substrate film conveyed between the first drive portion and the second drive portion and which support one surface of the substrate film onto circumferential surfaces of the film-forming rollers; evaporation portions which form the evaporation films on a surface of the substrate film opposite to the surface supported by the film-forming rollers; and a third drive portion as defined herein.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

Abstract: In the case of the treatment installation for the vacuum treatment, in particular vacuum coating, of a front side of substrates in strip form in a first process chamber with a first process roller and at least one process source and a second process chamber with a second process roller and at least one process source, it is provided that there is a transfer chamber which is arranged between the first and second process chambers, is coupled with both process chambers and can be separated in terms of pressure from at least one of the process chambers and an unwinding device with a removable unwinding reel and a winding-up device with a removable winding-up reel for the substrate to be treated as well as an outside air lock for loading and unloading the unwinding reel and/or winding-up reel.

Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.

Abstract: An elongate vacuum system for coating one or both sides of a flat substrate which can be displaced by the system, comprises at least one magnetron provided with a magnetron surrounding area and is subdivided into successive compartments in the direction of transportation of the substrate by separating walls having closeable suction openings. The compartments can be evacuated either directly by a vacuum connection provided on the compartment or indirectly via a suction opening in the separating wall. At least one compartment comprises an upper partial compartment which is arranged above the substrate. The partial compartment comprises a closeable upper opening in at least one of the outer walls thereof. The aim is to produce an elongate coating system which is flexible to use according to the requirements of various one and two-sided coating processes and ensures a stable, differential and process-optimized sputter atmosphere.

Abstract: An aperture mask assembly includes a rotatable frame and a mask having apertures. A clamping arrangement is used to tension the mask and to conform the mask to a shape defined by the frame. Tension is applied to the mask in a direction substantially parallel to an axis of the frame and/or around the circumference of the shape defined by the frame. Deposition material emanating from a deposition source located within the rotatable frame is deposited through the mask apertures onto a web.

Abstract: The present invention is a high-throughput ion beam assisted deposition (IBAD) system and method of utilizing such a system that enables continuous deposition of thin films such as the buffer layers of HTS tapes. The present invention includes a spool-to-spool feed system that translates a metal substrate tape through the IBAD system as the desired buffer layers are deposited atop the translating substrate tape using an e-beam evaporator assisted by an ion beam. The system further includes a control and monitor system to monitor and regulate all necessary system parameters. The present invention facilitates deposition of a high-quality film over a large area of translating substrate.

Abstract: This invention relates to a vacuum vapor-deposition apparatus for forming vapor-deposited films on a base film, thereby to produce vapor-deposited films, and also to a method of producing vapor-deposited films. In the vacuum vapor-deposition apparatus, the synchronizing means equalizes the circumference velocity v1 of the coating roll and the circumference velocity v2 of the takeup guide roll. Hence, v1=v2. Therefore, the takeup guide roll never rubs the vapor-deposited layer provided on the surface of the film. This eliminates the possibility that the vapor-deposited layer has scratches. The vapor-deposited layer can therefore possess desired properties.