Abstract: In an exhaust pipe, a rotating shaft takeoff connection is provided so as to support a rotating shaft for rotating a switching valve fixed thereon. The rotating shaft extends to the outside of the exhaust pipe and is provided with an introduction hole and branch holes in such a manner that the introduction hole and the branch holes are communicated with each other to form through holes extending from the outside to the inside of the exhaust pipe. Into a gap between the rotating shaft takeoff connection and the rotating shaft, purge gas is introduced via the introduction hole and the branch holes. Furthermore, pure water is introduced into the gap via the introduction hole and the branch holes. By utilizing the purge gas, exhaust gas within the exhaust pipe is prevented from leaking outside the pipe and by utilizing the pure water, accumulated solid substance are prevented from adhering to the related parts of the pipe.

Abstract: A system and method for control of water content in a strip bath. The method to control water content in a solvent bath used for cleaning of semiconductor parts in the back end of semiconductor manufacturing requires addition of water to replace evaporated water. This is done by periodically adjusting a conductivity setpoint at least in part based on the elapsed chemical bathlife and at least in part based on the number of semiconductor parts that have been processed in the bath. The conductivity of the strip bath solution is then continuously measured (as by using an electrodeless conductivity probe). Water is added (as by a DI water injection system) into the bath solution whenever the solvent conductivity falls below the conductivity set point.

Abstract: An apparatus and method for cleaning and pressure testing tube structures comprising a cleaning fluid supply pump and a pressurization pump alternately in fluid communication with a feed header having a feed header interface engageable to an end of at least one tube structure and a drain header having a drain header interface engageable to an opposing end of the at least one tube structure and an outlet valved so as to be selectively closed or opened depending on mode of operation of the apparatus. The apparatus and associated method cleans and pressure tests a tube by engaging a tube between the feed header interface and the drain header interface and maintaining said engagement while sequentially flowing a cleaning fluid through the inner diameter of the hollow tube, pressurizing a static fluid within the hollow tube, and releasing fluid from the tube.

Abstract: A cleaning apparatus and a cleaning method wherein cleaning and drying can be carried out in the same cleaning apparatus without the risk of reverse contamination of the cleaned object after the drying process. The cleaning apparatus includes a supporting device for supporting an object to be cleaned, and a cleaning cup surrounding the supporting device to prevent splashing of a cleaning liquid. The cleaning apparatus includes a cleaning device for cleaning an inner wall of the cleaning cup with a cleaning liquid.

Abstract: A process for removing paint from a plastic substrate that typically includes immersing and optionally agitating the painted plastic substrate in a first chemical fluid, removing the substrate from the first chemical fluid, typically immersing and optionally agitating the substrate in a second chemical fluid, removing the substrate from the second chemical fluid, optionally immersing and optionally agitating the substrate in a third chemical fluid, where the third chemical fluid typically includes substantially the same chemicals as the second chemical fluid, rinsing the substrate, and drying the substrate. The present invention also includes a method for recycling an initially painted plastic substrate.

Abstract: A method of cleaning a lubrication system of a machine includes removing existing lubricant and circulating a cleaning fluid through the lubrication system. After the cleaning fluid has been removed, a neutralising fluid is circulated through the lubrication system, whereby the neutralising fluid combines or reacts with the cleaning fluid to produce a fluid that does not adversely affect the lubricating qualities of fresh lubricating fluid. An apparatus (1) for carrying out the method includes first (3) and second (15) reservoirs to receive the cleaning fluid and neutralising fluid respectively, one or more connectors to connect the apparatus to the machine, one or more pumps adapted to circulate cleaning fluid and neutralising fluid and a controller to control the transfer of the cleaning fluid and neutralising fluid from the reservoirs to the machine.

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract: A process for pickling martensitic or ferritic stainless steel, preferably in the form of wires, tubes or rods, wherein the stainless steel is placed in contact with a pickling solution which has a temperature in the range 15 to 29° C. and contains 50 to 120 g/l of free sulfuric acid, 5 to 40 g/l of free HF and 5 to 40 g/l of Fe(III) ions. Such pickling may be incorporated into a sequential process, wherein the stainless steel is a) subjected to a treatment during which the oxidic coating is applied, preferably sand-blasting or metal-blasting, treatment with a molten salt or treatment with an aqueous permanganate/alkali metal hydroxide solution, b) pickled in accordance with the aforedescribed process, and c) post-treated with a passivating solution.

Abstract: An embodiment of the invention is a method of cleaning a material stack 2 that has a hard mask top layer 8. The method involves cleaning the material stack 2 with a fluorine-based plasma etch. The method further involves rinsing the material stack 2 with a wet clean process.

Abstract: Many prior art processes for cleaning predominantly organic hard surfaces have been found to be considerably less effective in removing very fine particles on such surfaces than are the best cleaners for metallic surfaces. However, it has been found, and forms the basis of this invention, that fine particles can be removed effectively from organic surfaces by an indirect process of first forming a thin solid coating over the surface and then removing the solid coating, into which the fine particles that formerly contaminated the surface to be cleaned have presumably become incorporated. Substantially hydrolyzed poly(vinyl acetate) has been found particularly useful for forming the thin solid coating when this coating is to be removed by treatment with an acidic aqueous solution; acrylate polymers are preferred if the solid coating is to be removed by an alkaline aqueous solution.

Abstract: A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered with polymer containing residues; and, subjecting the semiconductor wafer to a series of cleaning steps including sequentially exposing the process surface to at least one primary solvent and at least one intermediate solvent the at least one intermediate solvent comprising an ammonium nitrate containing solution.

Abstract: Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

Abstract: A washing method has a nonaqueous washing process of washing an object to be washed using a nonaqueous solution, an intermediate washing process of washing the object to be washed using a solution having solubility relative to both an aqueous solution and the nonaqueous solution after said nonaqueous washing process; and an aqueous washing process of washing the object to be washed with the aqueous solution after said intermediate washing process. When an intermediate washing process is performed between the nonaqueous washing process and the aqueous washing process, the nonaqueous solution adhered to the object to be washed in the nonaqueous washing process is removed in the intermediate washing process, and replaced by a solution having solubility relative to both the nonaqueous solution and the aqueous solution, so as to prevent the nonaqueous solution from being introduced into the aqueous solution used in the aqueous washing process.

Abstract: A method is provided for treating an object. In this method, a treating chemical is introduced to a bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid, followed by introducing non-treating liquid into the bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid. An apparatus for carrying out this method is also provided. This method is particularly beneficial for objects used in precision manufacturing by treatment with solutions, such as semiconductor wafers or similar substrates.

Abstract: A method for post-etch cleaning of a substrate with MRAM structures and MJT structures and materials is disclosed. The method includes inserting the substrate into a first brush box configured for double-sided mechanical cleaning of the substrate. A non-HF, copper compatible chemistry is introduced into the first brush box for cleaning the active and backside surfaces of the substrate. The substrate is then inserted into a second brush box which is also configured to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate. A burst of chemistry is introduced into the second brush box followed by a DIW rinse. The substrate is then processed through an SRD apparatus for final rinse and dry.

Abstract: A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.

Abstract: A process for removing paint from a plastic substrate that typically includes immersing and optionally agitating the painted plastic substrate in a first chemical fluid, removing the substrate from the first chemical fluid, typically immersing and optionally agitating the substrate in a second chemical fluid, removing the substrate from the second chemical fluid, optionally immersing and optionally agitating the substrate in a third chemical fluid, where the third chemical fluid typically includes substantially the same chemicals as the second chemical fluid, rinsing the substrate, and drying the substrate. The present invention also includes a method for recycling an initially painted plastic substrate.

Abstract: The invention relates to a method of low temperature cleaning and applying an antimicrobial treatment to food and beverage plant equipment. In addition, the method includes carbon dioxide compatible chemistry. The method may be achieved through a multi-step method.

Abstract: The invention relates to a method of low temperature cleaning and applying an antimicrobial treatment to food and beverage plant equipment. In addition, the method includes carbon dioxide compatible chemistry. The method may be achieved through a multi-step method.

Abstract: Disclosed is a novel process for cleaning and restoring the operating efficiency of organic liquid chemical exchangers in a safe and effective manner and in a very short period of time, without a need to disassemble the equipment and without the need to rinse contaminate from the equipment after cleaning. Used is a formulation of monocyclic saturated terpene mixed with a non-ionic surfactant package specifically suited to oil rinsing. The terpene-based chemical is injected into organically contaminated exchangers using a novel process involving high-pressure steam to form a very effective cleaning vapor.

Abstract: Disclosed is a novel process for interior cleaning and by cleaning, removing noxious gas and/or restoring the operating efficiency of organically contaminated hydrocarbon processing equipment in a safe and effective manner and in a very short period of time, without a need to manually enter an unsafe environment and mechanically remove organic contaminants. Used is a formulation of non-aqueous, monocyclic saturated terpene mixed with a non-ionic surfactant package. The terpene-based chemical is injected into organically contaminated equipment using a novel process involving high-pressure steam to form a very effective cleaning vapor.

Abstract: A method of removing a virgin metal oxide coating from the surface of a superalloy gas turbine engine component. The component bearing the applied metal oxide coating is contacted with an aqueous coating-removal solution, typically containing by weight about 10-25% alkali hydroxide, about 1-8% alkanolamine, and about 0.5-5% gluconate salt at a temperature of from about 170° F. (67° C.) to about 210° F. (99° C.), for a time sufficient to remove the metal oxide coating from the superalloy blade by gentle mechanical means. The metal oxide coating can comprise one or more metal oxide layers, such as a chromium oxide layer and an aluminum oxide layer.

Abstract: Disclosed is a novel process for interior cleaning and by cleaning, removing noxious gas and/or restoring the operating efficiency of organically contaminated hydrocarbon processing dynamic devices in a safe and effective manner and in a very short period of time, without a need to manually enter an unsafe environment and mechanically remove organic contaminants. Used is a formulation of non-aqueous, monocyclic saturated terpene mixed with a non-ionic surfactant package. The terpene-based chemical is injected into the organically contaminated device using a novel process involving high-pressure steam to form a very effective cleaning vapor. The device is activated during the process. The vapor may be optionally directed against the normal-flow direction of the device.

Abstract: A composition and method for stripping and cleaning organic coatings from substrates, comprising a solution of high-boiling alcohols, preferably polyglycols, a surfactant, preferably a nonylphenol ethoxylate, and an alkali metal hydroxide, said composition being essentially free of any amines. The composition aggressively and effectively strips paints and other organic coatings without harming underlying substrates damaged by prior art strippers, over conventional or lower time periods, and at conventional or lower temperatures. One embodiment of the invention comprises from about 40% to about 98.9% by weight of a high-boiling alcohol; from about 1% to about 60% of a non-ionic surfactant; and from about 0.1% to about 10% of an alkali hydroxide or mixture of alkali hydroxide.

Abstract: Aqueous cleaning agent and its use in a process for cleaning ultrafiltration membranes in ultrafiltration units of electro-dipcoating plants, which cleaning agent contains electro-dipcoating lacquer (EDL) binders overneutalized with neutralizing agent.

Abstract: A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.

Abstract: An automatic deliming process for a steam oven cooker is described. The process initiates a deliming procedure after a predetermined time of normal operation, which period of time is determined by the hardness of the water in the local area. Upon the expiration of this period of time a microprocessor signals an operator to shut down normal operation of the oven, and initiate the deliming process. The microprocessor then activates a peristaltic pump which injects a predetermined quantity of deliming liquid from an external reservoir into the generator. After the deliming time has passed and the generator contents have cooled to 140° F. the microprocessor automatically activates a drain pump to drain the deliming solution from the generator. Subsequently the microprocessor activates a fill-solenoid opening and inlet from a reservoir of rinse water into the generator to rinse the same. The microprocessor then again opens the drain to drain the rinse water, and normal operation is resumed.

Abstract: A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dicarboxylic acid, a buffering agent, a fluorine source, and optionally a water miscible organic solvent.

Abstract: The invention provides method for the evaluation of washing or cleaning techniques on a substrate comprising: i. applying a selective indicator system on the substrate to be evaluated; ii. washing the substrate with water and/or detergent containing composition; and ii. contacting the washed surface with an indicator complimentary developer, whereby inadequate washing is indicated when upon contacting of the developer it acts on the unwashed indicator to develop a colour indicative of the insufficient washing or cleaning.

Abstract: A method of warewashing for the removal of starch is described herein. The method includes applying an alkaline composition to a dish, then applying an acidic composition to a dish, and then applying a second alkaline composition to the dish. The method may include additional steps. Compositions for using with the method are also disclosed. Finally, dish machines that may be used in accordance with the method are disclosed.

Abstract: A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time. A substrate treatment apparatus is also disclosed for a substrate. The apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety.

Abstract: A method and apparatus is provided for removing material from the edge of a disk. In one embodiment, the edge of the disk is contacted with etchant via an etchant containing swab or trough (which may contain one or more transducers) and is rotated such that successive portions of the disk edge are scanned through the trough or past the swab. To prevent etchant from contacting the major surface of the substrate, and/or to prevent excessive etching, the edge of the disk is contacted with a rinsing fluid (e.g., a rinsing fluid nozzle or a trough filled with rinsing fluid). In a further embodiment material such as residue or particles may be removed via a trough containing sonically energized rinsing fluid.

Abstract: The present invention relates to a method for cleaning a pressurized container having at least one chemical contained therein. The pressurized container may be any type of container able to store chemicals under pressure. Preferably, however, the container is a rail tank car. Generally, the method includes: a step of injecting the container with an input gas to create a chemical/input gas mixture; a step of removing the chemical/input gas mixture via a vacuum pump; and a step of injecting the chemical/input gas mixture into a reaction tank to neutralize the chemical. The input gas may be heated nitrogen gas or heated, dry air. The reaction tank may contain a caustic material for reacting with the chemical.

Abstract: Alkaline and acid cleaning solutions (180, 182), are used sequentially for removing organic and inorganic residues, respectively, from the chamber. The two cleaning solutions are stored in separate storage containers (52, 54) carried by the cart. The alkaline cleaning fluid preferably includes a strong base, such as potassium or sodium hydroxide. The acid cleaning solution includes a strong acid, such as phosphoric acid, which passivates the chamber during the cleaning process. After cleaning is complete, the two cleaning fluids are mixed together to form a neutral or near neutral solution which is disposable in a sanitary sewer system without further treatment.

Abstract: A method is disclosed for rinsing a cleaned object whereby cleaning chemical liquid adhered to the object is substantially removed therefrom while substantially reducing the amount of pure water used for rinsing. The object with cleaning chemical liquid adhered thereto is immersed in a rinse bath filled with pure water, so that the cleaning chemical liquid may be rinsed off therefrom while pure water is continuously fed to the rinse bath. A neutralizing chemical liquid of alkalinity or acidity opposite that of the cleaning chemical liquid is added to the pure water in the rinse bath by feeding the neutralizing chemical liquid using a feed pump and a pump controller. Thus, the cleaning chemical liquid is neutralized by the neutralizing chemical liquid, to thereby be converted into a salt readily soluble in pure water, which salt is then discharged together with the pure water by overflowing the rinse bath.

Abstract: A highly efficient method for cleaning a substrate, whereby in the cleaning of the substrate, {circle over (1)} in a short time, {circle over (2)} both particle contaminants and metal contaminants can be removed, and {circle over (3)} a problem associated therewith, such as re-deposition of contaminants or a dimensional change due to etching, can be remarkably reduced, and which has the following characteristics.

Abstract: In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

Abstract: In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.

Abstract: A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.

Abstract: In a process for removing the paint from plastic components provided with coats of paint, the plastic components are first crushed to a bulk material size of the crushed plastic pieces. The plastic pieces are subsequently mixed with a paint removing agent reducing the adhesion of the coats of paint to the plastic pieces, and circulated by means of a conveyor screw. The paint removing agent is formed in this connection by an emulsion consisting of at least one benzyl-substituted alkanol and an alkyl-glycol acetate or N-alkyl-pyrrolidone with an aqueous lye, which can not be completely mixed. The mixing ratio for mixing the individual components is selected so that it is in the range of a mixing gap. After the paint removing agent has acted upon the painted plastic pieces, a solid substance is added to the paint remover so that the further steps of the method can be carried out in a dry state.

Abstract: A process of cleaning an enamel surface with a liquid acidic composition comprising an enamel safe buffering system, wherein said buffering system comprises a salt having an anion selected from the group consisting of hydroxide and carbonate; and a cation that has an ionic radius larger than 115 pm; with the proviso that no ethers of diethylene glycol are present in said composition.

Abstract: A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of three specific stages, with the first stage featuring the removal of organic contaminants and the growth of a native oxide layer on the silicon surface. A second stage features removal of the native oxide layer and removal of metallic contaminants from the silicon surface, while the third stage is used to dry the silicon surface. The novel wet chemical clean procedure is performed in less time, and using less chemicals, then counterpart wet chemical cleans also used for the preparation of silicon surfaces for subsequent processing steps.

Abstract: This invention relates to water-based alkaline cleaning solutions and their use as an environmentally safer replacement of organic solvents to remove photoresist, polyimide residue and other interlevel dielectric polymer coating residue from polymer film apply equipment, specifically, spin coater bowl and assembly parts consisting of a teflon top shield, stainless steel plate, and a bottom teflon spin coating bowl used in semiconductor device fabrication processes.

Abstract: A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.

Abstract: The present invention relates to methods for cleaning, rinsing, and/or antimicrobial treatment of medical carts, medical cages, and other medical instruments, devices or equipment. The method for cleaning employs a solid alkaline, for example a solid carbonate, cleaning composition for cleaning the medical cart, cage, instrument, device, or equipment. The method for rinsing employs a solid neutral or neutralizing rinse composition for rinsing the medical cart, cage, instrument, device, or equipment. The method for antimicrobial treatment employs a solid, for example a solid quaternary ammonium or solid halogen, antimicrobial composition, for antimicrobial treatment of the medical cart, cage, instrument, device, or equipment.

Abstract: A semiconductor wafer cleaning method is provided. After cleaning the wafer with a chemical cleaning solution, the wafer is placed in a cleansing tank that fills with deionized water. A neutralizer is then added to the cleansing tank. The surface of the wafer is then neutralized to a neutral pH value. Thereafter, the chemical cleaning solution residue on the wafer surface is removed by cleaning the wafer with deionized water.

Abstract: The present invention relates to a method of removing a layer of material from a synthetic resin or an organic acid ester of cellulose comprising: washing the layer from the substrate with an aqueous alkali solution with a temperature of at least 105° C., and then washing the alkali solution from the substrate. Furthermore, the present invention relates to a pressure vessel used for the above method, comprising a longitudinal cylindrical body having a circular cross-section, an end plate connected to the top of the cylindrical body and an inverted end plate connected to the lower part of the cylindrical body in a manner such that its convex part faces upwards wherein the pressure vessel has a strainer plate and a stirring blade inside the cylindrical body.

Abstract: The invention relates to a method of manufacturing non-slip floor coverings made of mineral materials, such as, for example, natural stone, fine stoneware, artificial stone or ceramics. This method is carried out in a two-stage process, there being produced on the surface of the floor coverings or slabs, in a first process stage by means of pulsed laser bombardment, statistically distributed microcraters invisible to the human eye. The surface of the floor coverings or slabs obtained in this way is then, according to the invention, subjected to hydromechanical aftertreatment.

Abstract: A method including the consecutive steps of: dipping a wafer in a washing solution in a washing chamber; replacing the washing solution by a first chemical solution in the washing chamber receiving therein the wafer, the first chemical solution including at least one chemical; dipping the wafer in the first chemical solution after stopping the replacing; and replacing the first chemical solution by a second chemical solution including the at least one chemical and having a concentration lower than a concentration of said first chemical solution. The number of the particles remaining on the wafer is significantly reduced compared with a conventional method to improve the removing rate of the particles deposited onto the wafer.

Abstract: A method of removing graphite from metal molds used in the glass fabrication industry, the method including placing a metal glass-fabricating mold with graphite bonded thereto in a chamber, providing an oxygen rich mixture of combustible gases in the chamber, said oxygen rich mixture containing from about 10 to about 25% stoichiometric excess of oxygen, and igniting the oxygen rich mixture of combustible gases in the chamber to produce a temperature of at least about 6,000° F. and a pressure wave. A high temperature wave front and the pressure wave thereby produced remove graphite from the metal mold by ablation of the graphite.