Abstract: The invention provides a heat transfer composition comprising (i) a first component selected from trans-1,3,3,3-tetrafluoropropene (R-1234ze(E)), cis-1,3,3,3-tetrafluoropropene (R-1234ze(Z)) and mixtures thereof; (ii) carbon dioxide (R-744); and (iii) a third component selected from 1,1-difluoroethane (R-152a), fluoroethane (R-161), and mixtures thereof.

Abstract: The invention provides a heat transfer composition comprising (i) a first component selected from trans-1,3,3,3-tetrafluoropropene (R-1234ze(E)), cis-1,3,3,3-tetrafluoropropene (R-1234ze(Z)) and mixtures thereof; (ii) carbon dioxide (R-744); and (iii) a third component selected from propylene (R-1270), propane (R-290), n-butane (R-600), isobutane (R-600a), and mixtures thereof.

Abstract: A method for washing a vehicle is provided, wherein the body of the vehicle is sprayed with pressurized washing liquid via an outlet nozzle of a washing tool and the rims of the vehicle are sprayed with a rim cleaning agent. The washing tool is selectively supplied with at least one of pressurized washing liquid by a high-pressure pump and alkaline rim cleaning agent by a cleaning agent supplying device. A vehicle washing apparatus for performing the method is also provided.

Abstract: A method for cleaning process apparatus used for production of liquids, especially for cleaning filters, for example membrane filters. The apparatus is contacted with a solution of periodate. It is especially preferred that the cleaning process is carried out at a temperature between 15 and 95° C.

Abstract: A dishwasher includes a rack provided with interior and exterior corner nozzles to direct washing fluid onto interior and exterior surface portions of an object placed in a corner of the rack.

Abstract: A substrate cleaning apparatus includes: a pure water supply line provided with a pure water flow regulator and a pure water supply valve; chemical supply lines each provided with a chemical flow regulator and a chemical supply valve; a merging line where pure water and a plurality of liquid chemicals meet to form a cleaning liquid; a cleaning liquid supply line configured to supply the cleaning liquid to a substrate; and a controller configured to control the pure water flow regulator, the pure water supply valve, the chemical flow regulators, and the chemical supply valves such that the pure water and the plurality of liquid chemicals are present at a predetermined ratio at a meeting point.

Abstract: A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.

Abstract: A wet chemical processing method and apparatus for use in semiconductor manufacturing and in other applications, is provided. The method and apparatus provide for energizing a processing liquid such as a cleaning or etching liquid using ultrasonic, megasonic or other energy waves or by combining the liquid with a pressurized gas to form a pressurized spray, or using both. The energized, pressurized fluid is directed to a substrate surface using a fluid delivery system and overcomes any surface tensions associated with liquids, solids, or air and enables the processing liquid to completely fill any holes such as contact holes, via holes or trenches, formed on the semiconductor substrate.

Abstract: A composition including HCl, urea, complex substituted keto-amine-hydrochloride, an alcohol, an ethoxylate, and a ketone is provided in a method for solubilizing calcium carbonate in an aqueous suspension or dispersion of calcium carbonate.

Abstract: In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

Abstract: The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

Abstract: System and method for CMP station cleanliness. An embodiment comprises a chemical mechanical polishing (CMP) station comprising a housing unit covering the various components of the CMP station. The CMP station further comprising various surfaces of a slurry arm shield, a slurry spray nozzle, a pad conditioning arm shield, a platen shield, a carrier head; and the interior, vertical surfaces of the housing unit. A cleaning liquid delivery system configured to dose a cleaning liquid on the various surfaces of the CMP station at set intervals.

Abstract: A method of cleaning a photolithographic mask or semiconductor wafer involves mixing a gas and water in a jetspray nozzle and discharging the gas and water jetspray stream from a nozzle onto the photolithographic mask or wafer. The water jetspray stream is made up of a cluster of micro water droplets entrained in the gas having a predetermined size sufficient to dislodge contaminant particles adhered to the surface of the mask. The step of mixing the gas and water includes radially injecting the gas from a first plurality of circumferentially spaced apart gas nozzles into a stream of the water and radially injecting the gas from a second plurality of circumferentially spaced apart gas nozzles into the stream of the water, wherein the second plurality of gas nozzles are spaced above or below the first plurality of gas nozzles and radially offset from the first plurality of gas nozzles.

Abstract: A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, rinsing the substrate, supplying the rinse water to rinse the substrate, and drying the substrate. The rinsing includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.

Abstract: Methods of acidic warewashing are disclosed. The compositions can include other materials including surfactants and chelating agents, and are preferably phosphorous free. Methods of using the acidic compositions are also disclosed. Exemplary methods include using the acidic compositions together with other compositions, including alkaline compositions and rinse aids employed in an alternating alkaline/acid/alkaline manner. The methods also include acidic compositions that serve multiple roles.

Abstract: The invention pertains to a method for removing ice layers and/or snow layers and/or dirt layers from the rotor blades of axial fans in cooling installations for refrigerating and/or freezing products. At least one cleaning substance jet is directed toward the rotor blades of an axial fan within certain time intervals in such a way that ice layers and/or snow layers and/or dirt layers are at least separated from the surfaces of the rotor blades and transported away, wherein the rotor blades rotate with nominal speed while cleaning jets act upon their surfaces.

Abstract: A hard floor surface care process comprising a process of identifying, cleaning, polishing, and protecting manmade and natural stone hard floor surfaces having a single surface or multi-surface quality. The hard floor surface care process comprising an acid reactive or nonreactive hard floor surface identifying process; an emulsifying solution, agitating, and toweling cleaning process; a polishing process utilizing a lubricating solution with a polishing chemistry or pad, and a protecting process utilizing a protecting chemistry selected as a function of the identifying process.

Abstract: Methods and systems are provided for preparing a ruthenium containing liner/barrier for metal deposition, and are useful in the manufacture of integrated circuits. In accordance with one embodiment, a borohydride solution having a pH greater than 12 is mixed with DI water at the place of application to form a pretreatment solution. The pretreatment solution is applied to reduce a ruthenium-containing surface of a substrate. Following reduction of the ruthenium containing surface, copper deposition may be initiated.

Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.

Abstract: A process for treating the surface of a substrate in the manufacture of a semiconductor device. The process comprises providing a concentrated acid or base, a peroxide and water, and delivering the acid or base, the peroxide and the water to the surface of the substrate. The acid or base and the water are delivered separately to the surface of the substrate and allowed to mix on the surface, and the water is delivered in pulses. The present invention also provides an apparatus adapted to carry out this process.

Abstract: A heat exchanger may be cleaned by introducing compressed nitrogen and a flushing composition through an injection device.

Abstract: A method of processing a heterogeneous material includes entraining heterogeneous particles into a fluid stream. Each of the heterogeneous particles comprises a liquid portion and a solid portion. The fluid stream is passed through at least one adjustable nozzle, and is impacted to dissociate the liquid from the solid. A method of separating oil from solid particles includes mixing oil-coated solid particles with water to form a slurry, passing a first portion of the slurry through a first nozzle, and passing a second portion of the slurry through a second nozzle such that the second portion of the slurry intersects the first portion of the slurry to separate the oil from the particles.

Abstract: There is provided a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent. The substrate processing method includes a rinse solution supply process (step S12) for supplying the rinse solution onto the substrate on which the resist pattern is formed; and a rinse solution removing process (steps S14 to S16) for removing the rinse solution from the substrate in an atmosphere including vapor of a first processing solution that hydrophobicizes the resist pattern.

Abstract: An exposure apparatus exposes a substrate through an exposure liquid with exposure light. A cleaning liquid is provided to the exposure apparatus, in order to clean at least part of the exposure apparatus. In the cleaning liquid, a prescribed gas of an amount that is greater than or equal to the saturation concentration is dissolved.

Abstract: Nozzle apparatus and methods for treating workpieces are disclosed. An example apparatus includes a nozzle module and a first nozzle chamber disposed within the nozzle module. The first nozzle chamber has a first nozzle opening and is to deliver a relatively high pressure fluid to the first nozzle opening. The example apparatus also includes a second nozzle chamber disposed within the nozzle module and having a second nozzle opening, the second nozzle chamber to deliver a relatively low pressure fluid to a second nozzle opening. A first flow of the low pressure fluid at least partially contacts a second flow of the high pressure fluid. The second flow is directed onto a workpiece.

Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.

Abstract: The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet generator is mounted above a spin chuck, and is moved across a major surface of the wafer-shaped article in a linear or arcuate path. The droplet generator includes a transducer acoustically coupled to its body such that sonic energy reaches a region of the body surrounding the discharge orifices. Each orifice has a width w of at least 1 ?m and at most 200 ?m and a height h such that a ratio of h to w is not greater than 1.

Abstract: The present invention is in the field of household cleaning tools. The invention further relates to the use of an air-water jet for the cleaning of hardsurfaces. It is an object of the present invention to provide easier cleaning of hard surfaces. It is therefore an object of the present invention to provide a process of easier cleaning of hard surfaces, especially by means of a device that uses a relatively low water flow rate. Surprisingly it has been found that an external mix air-water jet device may be used for cleaning hard surfaces.

Abstract: A method of cleaning dishware with a liquid detergent composition having a hydrophobic emollient and a crystalline structurant to provide improved hand skin care benefits and superior grease cleaning and/or suds mileage.

Abstract: A device for combining multiple components into a foam mixture and dispensing the foam mixture into a pipe is described. The multiple components are combined immediately prior to dispensing, which maximizes activity for labile, biologically active components whose degradation accelerates upon combining components. Embodiments of the device are relatively light weight and adapted to removably couple to sewer cleaning vehicles.

Abstract: A method of simultaneously cleaning and disinfecting an industrial water system is described and claimed. The method involves the addition to the water of the industrial water system of a Compound selected from the group consisting of the alkali salts of chlorite and chlorate and mixtures thereof; and an acid, followed by allowing the water in the industrial water system to circulate for several hours. The reaction of the alkali salts of chlorite and chlorate and acid produces chlorine dioxide in-situ in the water of the industrial water system. The chlorine dioxide kills microorganisms and the acid acts to remove deposits upon the water-contact surfaces of the equipment. This cleaning and disinfecting method works in a variety of industrial water systems including cooling water systems.

Abstract: The cleaning apparatus includes a reservoir tank for reserving a cleaning fluid, a pressure-feed unit for feeding the cleaning fluid while pressurizing the cleaning fluid above the atmospheric pressure, a heating unit for heating the cleaning fluid pressure-fed from the pressure-feed unit above an atmospheric pressure boiling point of the cleaning fluid, a gas supply unit for supplying a gas and an injection unit connected to the heating unit and the gas supply unit for injecting the cleaning fluid pressurized by the pressure-feeding unit and heated by the heating unit as a pressurized superheated cleaning fluid and the gas supplied from the gas supply unit to the member at the same time.

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid.

Abstract: Cleaning processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an antioxidant to form an insoluble adduct followed by solubilizing the adduct with a basic aqueous cleaning solution.

Abstract: A method and system for cleaning a substrate in a multi-module cleaning assembly is provided. The method begins by receiving the substrate into the cleaning module. A cleaning chemistry, at a temperature elevated from an ambient temperature, is applied onto a top surface of the substrate. Concurrent with application of the cleaning chemistry, vapors are exhausted from the cleaning chemistry through a port located below a bottom surface of the substrate with the vapor exhaustion providing a negative pressure relative to a pressure external to the cleaning module. The application of the cleaning chemistry is terminated, followed by termination of the exhausting of the vapors. The substrate is dried after the flowing of inert gas is terminated.

Abstract: Apparatus and related methods for continually measuring and dispensing precise amounts of bulk chemical in a car wash application. A gravimetric dispensing assembly can include a load cell and a syringe dosing pump that is suspended below the load cell such that an entire mass of the syringe dosing pump is communicated to the load cell. In this manner, the load cell can measure the actual mass of chemical being dispensed from the syringe dosing pump on a continuous basis without solely relying on the rated volumetric capacity of the syringe dosing pump. The syringe dosing pump can be driven by a stepper motor that can be pulsed as directed by a controller so as to maintain, increase or decrease an amount of bulk chemical being dispensed from the syringe dosing pump.

Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container.

Abstract: An apparatus, method and system provides for dispensing liquid products to two or more appliances. Liquid diluent is communicated through an anti-siphon valve (64) connected in fluid communication to an aspirator (14). A mixed solution from the aspirator (14) is communicated to a distribution valve (36) for directing flow of a liquid product to two or more appliances using a single aspirating dispenser (12).

Abstract: Disclosed is a method for cleaning deposits from one or more parts of an engine fuel delivery system, the method comprising introducing into the engine fuel delivery system a cleaning composition comprising (a) one or more aromatic hydrocarbon solvents; and (b) one or more propylene glycol ethers.

Abstract: A heat transfer composition comprising trans-1,3,3,3-tetrafluoropropene (R-1234ze(E)), carbon dioxide (R-744) and a third component selected from difluoromethane (R-32), 1,1-difluoroethane (R-152a), fluoroethane (R-161), 1,1,1,2-tetrafluoroethane (R-134a), propylene, propane and mixtures thereof.

Abstract: In order to produce a particularly efficient device for deburring and/or cleaning a work piece that is dipped in a fluid medium comprising a fluid discharge device for producing a high pressure fluid jet, it is proposed that the device should comprise a gas discharge device for the production of a gas flow which at least partially envelops the fluid jet.

Abstract: A method and apparatus are provided for generating and applying a sanitizing liquid. The method includes moving a mobile floor cleaning device along a floor and electrochemically activating a liquid on the mobile floor cleaning device by passing the liquid through a functional generator having first and second electrode chambers that are separated by an ion exchange membrane such that the liquid activated in the first electrode chamber comprises O3 molecules. Substantially all of the liquid activated in the first and second electrode chambers are dispensed from the device within 5 seconds of the time at which the liquids are activated by the functional generator without an intermediate step of storing either of the liquids produced in the first or second electrode chambers. At least some of the dispensed liquid is recovered from the floor with a recovery device carried by the mobile floor cleaning device.

Abstract: Methods, systems, and computer programs are presented for processing a substrate in a processing chamber which includes a first chamber and a second chamber. A first surface of the substrate is exposed to the first chamber and a second surface of the substrate is exposed to the second chamber. One method includes an operation for applying a first fluid to the first surface of the substrate, where the first fluid is at a first temperature. Further, the method includes another operation for applying a second fluid to the second surface of the substrate, where the second fluid is at a second temperature. During processing of the substrate, the second temperature is higher than the first temperature, and the second fluid heats the substrate.

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.

Abstract: An apparatus and method for cleaning a surface comprising a gas dispensing conduit having a first end connectable to a source of pressurized gas and an open second end such that a stream of pressurized gas may be dispensed from the open second end of the gas dispensing conduit. A liquid dispensing conduit is connectable to a source of liquid and associated with the gas dispensing conduit in such a way that liquid is introduced into the stream of pressurized gas wherein the liquid dispensing conduit allows liquid to be introduced into the stream of pressurized gas at a rate that causes the liquid to contact the surface to be cleaned while substantially preventing the liquid from running off the surface.

Abstract: A surface treatment method of a metal member according to an embodiment of the invention includes removing an oily substance on the metal member by using gas-liquid two fluids that are obtained by boiling heated and pressured water under ordinary pressure. A surface treatment device of a metal member for removing an oily substance on the metal member includes self-generation two fluids production means for producing gas-liquid two fluids by boiling heated and pressured water under ordinary pressure, and a surface treatment room carrying out a surface treatment by bringing the self-generation two fluids into contact with the metal member.

Abstract: An apparatus for processing substrate includes a spin chuck, a first nozzle and a second nozzle. The spin chuck fixes and spins the substrate on which a photoresist layer is formed. The first nozzle is disposed over the spin chuck and provides a treatment liquid on the substrate so as to remove the photoresist layer. The second nozzle is disposed over the spin chuck and provides a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid. Therefore, efficiency of removing the photoresist layer may be improved.

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.

Abstract: A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with ?-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and ?-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to ?-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.