Abstract: Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: Provided is a substrate treating method. The substrate treating method may include treating a substrate by using a chemical solution; rinsing the substrate by using pure water after treating the substrate by using the chemical solution; and treating the substrate by using an organic solvent, wherein the substrate treating method further includes coating the substrate with a hydrophobic membrane between the treating of the chemical solution and the treating of the organic solvent.

Abstract: An apparatus for cleaning a substrate includes a cleaning chamber which accommodates a substrate inside the cleaning chamber, a treatment solution supply device which supplies a treatment solution having a volatile component and capable of solidifying or being cured to form a treatment film through vaporization of the volatile component, and a removal solution supply device which supplies a removal solution capable of removing the treatment film formed on a surface of the substrate. The treatment solution supply device supplies the treatment solution on the surface of the substrate set inside the cleaning chamber, and the removal solution supply device supplies the removal solution onto the treatment film formed on the surface of the substrate.

Abstract: A cooling gas discharge nozzle 7 is arranged above an initial position P(Rin) distant from a rotation center P(0) of a substrate W toward the outer edge of the substrate W and supplies a cooling gas to the initial position P(0) of the rotating substrate W to solidify DIW adhering to an initial region including the initial position P(Rin) and the rotation center P(0). Following formation of an initial solidified region FR0, a range to be solidified is spread toward the outer edge of the substrate W and all the DIW (liquid to be solidified) adhering to a substrate surface Wf is solidified to entirely freeze a liquid film LF.

Abstract: Methods and apparatus for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing electrorheological (ER) and magnetorheological (MR) fluids to remove contaminant residual particles from a surface of the substrate are provided.

Abstract: Methods for removing residual particles from a substrate are presented including: receiving the substrate including the residual particles; and functionalizing the residual particles with functionalizing molecules, wherein the functionalizing molecules selectively attach with a surface the residual particles, where the functionalizing molecules impart a changed chemical characteristic to the residual particles, and where the changed chemical characteristic facilitates removal of the residual particles from the substrate. In some embodiments, methods further include: before functionalizing, cleaning the substrate, where the cleaning leaves residual particles adhered with a surface of the substrate, and where the residual particles are hydrophilic; and if the surface of the substrate is hydrophobic, performing the functionalizing.

Abstract: A method for fabricating a semiconductor device, the method including growing a first semiconductor structure comprising a first semiconductor material on a surface of a substrate, wherein growing the first semiconductor structure includes forming a semiconductor particle comprising the first semiconductor material on a second semiconductor structure of the semiconductor device. The method further includes forming a protection layer of a second semiconductor material on the first semiconductor structure, wherein forming the protection layer includes forming the protection layer on the semiconductor particle. The method further includes removing a portion of the protection layer, wherein removing the portion of the protection layer includes fully removing the protection layer on the semiconductor particle and the semiconductor particle.

Abstract: A method for removing foreign matters attaching on a surface of a fine pattern of a mold, having the fine pattern being convexo-concave, at least on one surface thereof, thereby cleaning the fine pattern surface of the mold, and an imprinting device applying that method therein, without removing, comprises the following steps of: applying a photo-curable resin on a surface of a body to be transcribed, onto which the mold is suppressed, and thereby forming a photo-curable resin layer; suppressing the mold on the photo-curable resin, which is applied on the surface of the body to be transcribed; separating the photo-curable resin cured from the mold, after curing the photo-curable resin, and whereby taking the foreign matters attaching on the surface of the fine pattern into the photo-curable resin cured to remove them, wherein the photo-curable resin to be formed on the surface of the body to be transcribed is formed with such thickness that it can remove the foreign matters attaching on the fine pattern, and

Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

Abstract: A method of treatment for inhibiting sulfur-based corrosion or scaling or for removing scaling from a surface including inhibiting corrosion caused by sulfur-containing materials, reducing corrosion caused by sulfur-containing materials, inhibiting scaling caused by sulfur-containing and sulfur-containing materials in gas, liquid or solid phase or any combination of multiple phases of materials, reducing scaling caused by sulfur-containing and sulfur-containing materials, and removing scaling caused by sulfur-containing and sulfur-containing materials. The method involves contacting sulfur-containing materials with a composition containing a turpentine liquid. The method also involves contacting corrodible surfaces or surfaces prone to scaling with a composition containing a turpentine liquid.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film at least on surfaces of recessed portions of a metal-based wafer, the liquid chemical for forming a water repellent protective film being characterized by comprising a surfactant which has an HLB value of 0.001-10 according to Griffin's method and includes a hydrophobic moiety having a C6-C18 hydrocarbon group and water, and characterized in that the concentration of the surfactant in the liquid chemical is not smaller than 0.00001 mass % and not larger than the saturated concentration relative to 100 mass % of the total amount of the liquid chemical. This liquid chemical can improve a cleaning step which tends to induce a metal-based wafer to cause a pattern collapse.

Abstract: A process flow exposing and cleaning contact surfaces employing a liquid cleaning agent such as flux to penetrate the interface between the glassy coats and the surface of metal and to delaminate the coats from the metal, and then, at elevated temperatures, to use the agent's vapor pressure to break up the glassy coats into smaller pieces. The glassy coats are prevented by their low density to penetrate into the molten solder. Finally, at ambient temperature, the floating filler debris is water-washed and rinsed away. Cleaning agents include low-viscosity liquids (oils) and flux, which do not decompose at elevated temperatures and are mixed with components operable to provide, at the elevated temperatures, the fumes for sufficient vapor pressure to break up and dislodge the coats from the metal contacts.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4?a?b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4?g?h?w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

Abstract: The present disclosure discloses an exemplary method for fabricating a semiconductor device comprises selectively growing a material on a top surface of a substrate; selectively growing a protection layer on the material; and removing a portion of the protection layer in an etching gas.

Abstract: This invention relates to a polymer composition, comprising: water; a water-soluble polymer; and solid particulates of a sequestering agent. The composition may be used for decontaminating, cleaning and/or washing substrates contaminated with contaminants and/or contaminated materials.

Abstract: A film formation method includes a film formation process for forming an SiO2 film on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films deposited inside the process container while exhausting gas from inside the process container after unloading the target object from the process container, wherein the film formation process and the oxidation purge process are alternately repeated a plurality of times without, interposed therebetween, a process for removing the films deposited inside the process container.

Abstract: A method of treatment for inhibiting sulfur-based corrosion or scaling or for removing scaling from a surface including inhibiting corrosion caused by sulfur-containing materials, reducing corrosion caused by sulfur-containing materials, inhibiting scaling caused by sulfur-containing materials in gas, liquid or solid phase or any combination of multiple phases of materials, reducing scaling caused by sulfur-containing materials, and removing scaling caused by sulfur-containing materials. The method involves contacting sulfur-containing materials with a composition containing a turpentine liquid. The method also involves contacting corrodible surfaces or surfaces prone to scaling with a composition containing a turpentine liquid.

Abstract: Methods and apparatus for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing electrorheological (ER) and magnetorheological (MR) fluids to remove contaminant residual particles from the substrate surface are provided.

Abstract: A method for removing residual filter cakes that remain adhered to a filter after typical particulate removal methodologies have been employed, such as pulse-jet filter element cleaning, for all cleanable filters used for air pollution control, dust control, or powder control.

Abstract: A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

Abstract: The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

Abstract: A coated article having a substrate coated with a layer of a sulfonate-functional coating, and methods of making and using.

Abstract: A substrate treatment apparatus includes: a substrate holding unit which horizontally holds a substrate; a liquid droplet nozzle which generates droplets of a treatment liquid which are sprayed on a spouting region on an upper surface of the substrate held by the substrate holding unit; and a protective liquid nozzle which spouts a protective liquid obliquely onto the upper surface of the substrate held by the substrate holding unit for protection of the substrate to cause the protective liquid to flow toward the spouting region on the upper surface of the substrate, whereby the spouting region is covered with a film of the protective liquid and, in this state, the treatment liquid droplets are caused to impinge on the spouting region.

Abstract: A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-? dielectric material preserving the characteristics of the low-?dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-? dielectric material at least partially exposed; b)—forming C?C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C?C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Abstract: A method for treating a wooden, bamboo and/or cork floor treated with at least one maintenance material and a treated wooden, bamboo and/or cork floor obtained by the method. The method comprises applying a stripping formula on the wooden, bamboo and/or cork floor; allowing the stripping formula to interact with the at least one maintenance material; applying mechanical treatment to release the at least one maintenance material; and removing the at least one maintenance material and the stripping formula.

Abstract: A method for producing an organic light-emitting device is provided for an organic light-emitting device having a substrate provided with external connection terminals, organic light-emitting elements provided on the substrate, and a protective film that covers the organic light-emitting elements. The method includes, sequentially, providing a protective film removal layer on the external connection terminals, forming the protective film on the substrate, dividing the substrate on which the protective film has been formed, and cleaning the substrate with water, an aqueous solution, or a solvent. The protective film removal layer and the protective film are removed from the external connection terminals as a result of cleaning the substrate.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

Abstract: A soil resistant floor surface treatment composition is provided. In particular, a composition comprises a maleic/olefin copolymer and an optional cleaning agent. Methods for treating a porous floor surface with a soil resistant agent and kits comprising a floor treatment composition, an applicator, a removal agent for removing a plurality of soils from a treated surface, and instructions for use are further provided by the present invention.

Abstract: A method and apparatus disinfecting a computer keyboard includes a metal ion treatment applied to the computer keyboard and other user input devices. A further measure taken is the installation of a shutoff mechanism in the link connecting the computer keyboard to the computer system to open the data connections between the keyboard and host system. Another measure is the periodic and reiterated wipedown of the keyboard and ancillary input devices with an antiseptic wipe. The shutoff mechanism is turned off before the wipedown procedure is carried out, to prevent any incidental keyboard entries made during the wipedown process from being transmitted to the host system.

Abstract: A method for cleaning contaminated surfaces of surgical waste management equipment. The method includes rinsing surfaces of the equipment with water to remove water soluble contaminants and waste material. A rinse solution is applied to the surfaces of the equipment to provide a residual film thereon. The rinse solution includes a first nonionic alkoxylated alcohol surfactant having an HLB value ranging from about 12 to about 15, a second nonionic alkoxylated alcohol surfactant having an HLB value ranging from about 16 to 20, an aqueous solvent, and a bio-film permeation agent. A total of the first surfactant and the second surfactant in the composition ranges from about 2 to about 20 percent by weight of a total weight of the composition.

Abstract: A rinsing liquid adheres to a substrate subjected to a cleaning process. The rinsing liquid on the substrate is first replaced with IPA liquid. While the substrate covered with the IPA liquid is held in a dryer chamber, liquid carbon dioxide is supplied to the surface of the substrate. Liquid nitrogen is supplied to cool down the interior of the dryer chamber. This solidifies the liquid carbon dioxide on the substrate into solid carbon dioxide. Thereafter, the pressure in the dryer chamber is returned to atmospheric pressure, and gaseous nitrogen is supplied into the dryer chamber. Thus, the temperature in the dryer chamber increases. The solid carbon dioxide on the surface of the substrate is sublimated, and is hence removed from the substrate. All of the steps are performed while carbon dioxide is not in a supercritical state but in a non-supercritical state.

Abstract: Provided herein are compositions for coatings that repel dust. The compositions comprise colloidal silica suspended in a low molecular weight alcohol, one or more hard nanoparticles, a fluoride source, and one or more combustible organic compounds. Methods of preparing a coating from the compositions are also provided herein.

Abstract: The invention relates to a cleaning method in which from a vacuum coating chamber (3) of a coating installation (1) for the coating of substrates (2) with alkali- or alkaline earth-metals, residues of alkali- or alkaline earth-metals are removed. For this purpose into the chamber (3) a gas from the group of N2, O2 or air is introduced, which reacts with the alkali- or alkaline earth-metals to form the corresponding solid compounds. Water can additionally be introduced into the vacuum coating chamber (3). After the alkali- or alkaline earth-metals have reacted with the gas, the corresponding solid compound is removed from the vacuum coating chamber.

Abstract: This invention relates to a method for removing fouling from a heat transfer surface, such as a heat exchanger. The method involves conducting a vapor containing a scouring material to the heat transfer surface and contacting the scouring material with the foulant, the heat transfer surface, or both. Scouring material and removed foulant can be recovered and conducted away.

Abstract: A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 ?m or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.

Abstract: The present method comprises providing a flexible web substrate (e.g., polymeric flexible web substrates) that forms at least part of a component of a device, coating so as to wet-out on and cover all or a substantial portion of a major surface on one side or both sides of the flexible web substrate with flowable polymeric material, while the flexible web substrate is moving in a down-web direction, and solidifying the polymeric material so as to form one cleaning layer on the major surface of one side or both sides of the flexible web substrate. The present invention can be utilized in a continuous in-line manufacturing process. In applications of the present invention where the flexible web substrate will not form a component of a device, the present invention broadly provides a method for cleaning particles from a flexible web of indefinite length.

Abstract: A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

Abstract: Methods and apparatus for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing electrorheological (ER) and magnetorheological (MR) fluids to remove contaminant residual particles from the substrate surface are provided.

Abstract: Graffiti removal compositions has been developed and are disclosed that when coupled with reliable methods: a) consistently removes graffiti and other unwanted or undesirable paint, inks or permanent markers from a surface, b) is packaged such that it is easily transported, c) is easy to use and requires no additional on-site additives or special equipment, and d) utilizes less harmful chemicals and lower concentrations of chemicals that may be considered harmful. Graffiti removal compositions are described that include: at least one alcohol-based compound, at least one aromatic compound, at least one halogenated compound, at least one hydrocarbon; and at least one lactam-based compound.

Abstract: A method of extending storage time prior to cleaning a component of a plasma chamber is provided. The method comprises removing the component from the chamber, covering a thermal spray coating on the component while the surface is exposed to atmospheric air, storing the component, optionally removing the covering, and optionally wet cleaning reaction by-products from the thermal spray coating. Alternatively, instead of, or in addition to covering a thermal spray coating on the component, the component can be placed into a desiccator or dry-box.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.

Abstract: An in-chamber member to use in the chamber of a plasma processing vessel has a coating film formed by a coating agent. The in-chamber member having deposits formed on the coating film is separated from the chamber and is immersed into a peeling solvent, e.g., acetone. Since the coating agent is made of a resist formed of a main component of, e.g., cyclized rubber-bisazide and a photosensitive component, the deposits can be separated from the in-chamber member together with the coating film being separated.

Abstract: The present invention relates to hard surface cleaning, and has as an object to provide a next time cleaning benefit. The invention provides the use of citric acid and/or a salt of citric acid for facilitating the removal of soil, in particular fatty soil, from a hard surface. Therewith the object of the invention has been achieved.

Abstract: A substrate having a liquid film formed by pre-processing unit is transported by a substrate transport robot from the pre-processing unit to a freeze processing unit disposed away from the pre-processing unit. In the freeze-processing unit, the liquid film is frozen. This causes the adhesion power of contaminants adhering to the surface of the substrate reduce, and therefore the contaminants is detached from the surface of the substrate. Subsequently, the substrate which was subjected to the freezing process, is transported from the freeze processing unit to a post-processing unit which is disposed away from the pre-processing unit and the freeze processing. In the post-processing unit, a cleaning liquid is supplied to the frozen film on the rotating substrate, thereby easily removing the contaminants adhering to the substrate together with the frozen film.

Abstract: Cleaning and reclaiming nano-imprint templates using environment friendly methods and systems is disclosed. A template may be cleaned by a combination of exposure to activated gaseous species followed by rinsing with oxygenated or hydrogenated DI water and exposure to reactive plasma to remove organic contaminant. Contaminant may be removed by forming a coating film of a water soluble polymer on the template and then peeling off the coating film. Organic residue from the film may be removed using oxygenated plasma.

Abstract: Compositions, methods, apparatuses, kits, and combinations are described for neutralizing a stain on a surface. The compositions useful in the present disclosure include a composition that is formulated to be applied and affixed to a surface. If desired, the composition may be substantially removed from the surface to remove a portion or substantially all of the stain before being affixed to the surface. If a user desires to remove the composition from the surface, the composition is formulated to be removed by a number of methods including, for example, vacuuming, wet extraction, chemical application, and the like. If the user desires to affix the composition to the surface in a permanent or semi-permanent manner, the composition may be affixed to the surface by applying energy thereto in the form of, for example, heat, pressure, emitted waves, an emitted electrical field, a magnetic field, and/or a chemical.

Abstract: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface.

Abstract: Method for constructing a line or dotted structure on a support, especially for constructing strip-like electrically conducting contacts on a semiconductor component such as a solar cell, by applying an electrically conducting paste-like substance containing a solvent adhering to a support and subsequent hardening of the substance. After the substance is applied to the support, a medium containing a polar molecule is applied on the support and/or the substance, through which the solvent contained in the substance is extracted.

Abstract: A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.