Abstract: Thermopile detector and method for fabricating the same, the method including the steps of (1) forming a diaphragm film on a substrate, (2) forming thermocouples in a given region on the diaphragm film, (3) forming a protection film on the thermocouples, (4) forming a photoresist on the protection film and removing the photoresist from a given region, (5) forming a black body on an entire surface including the photoresist and removing the remaining photoresist and the black body on the photoresist, and (6) removing a portion of the substrate from a given region of a back-side of the substrate, to expose the diaphragm film, thereby facilitating a compatibility of fabrication process with an existing semiconductor fabrication process#(a CMOS fabrication process), whereby improving a mass production capability, preventing a damage to the diaphragm film occurred in formation of the black body, and controlling a property of the black body uniform.

Abstract: A thin sensor for heat flux and temperature, designed for adhesive attachment to a surface, is manufactured on a flexible insulated metallic substrate. The sensor exhibits a combination of high sensitivity for heat flux and low resistance to the flow of heat. These characteristics enable it to measure heat flux at surface boundaries with improved accuracy over conventional heat flux transducers because the temperature drop produced by the sensor is very small. The response by the sensor to radiation, convection and conduction are equal. As such, the sensor can be calibrated in one mode of heat transfer and used for measurement in other modes. The high sensitivity of the sensor makes it ideal for measuring heat flow through insulating materials, and well adapted to instrumenting heat flow in buildings, detecting fires at an early stage, or remotely measuring the temperature of string and web products in industrial processing.

Abstract: A thermocouple array includes a dielectric layer having via openings therethrough, a first patterned conductive layer facing one surface of the dielectric layer, and a second patterned conductive layer facing another surface of the dielectric layer. Portions of the second patterned conductive layer can extend through the via openings to couple respective portions of the first patterned conductive layer. The second patterned conductive layer has a different thermal emf than the first patterned conductive layer. The dielectric layer, the first patterned conductive layer, and the second patterned conductive layer can be surface-conformable.

Abstract: A thin film thermocouple having junctions (2, 7) of metal and semiconducting metal oxides such as tin oxide/silver, and used as surface temperature sensors in conjunction with thin film heating elements (1) to control temperature.

Abstract: Thermoelectric sensor (12) formed by a membrane (14) including a plurality of thermoelectric elements (20) formed of a plurality of thermoelectric couples and forming a plurality of elementary cells. Each elementary cell is thermally insulated from adjacent elementary cells by metal wires (22, 23), preferably gold wires, arranged on the front face (25) of the membrane (14), more particularly, on an upper passivation layer (30). The metal wires (22 and 23) are thermally connected to a substrate (16) supporting said membrane. The two wires separating two adjacent thermoelectric elements (20) are separated from each other by an intermediate low thermal conduction region (28).

Abstract: An engine block containing thermoelectric materials that generates a direct current during operation and, in so doing, provides for at least some of the necessary engine cooling requirements and for at least some of the electric power requirements. The result is wasted heat energy is being converted into electricity.

Abstract: A thin sensor for heat flux and temperature, designed for adhesive attachment to a surface, is manufactured on a flexible insulated metallic substrate, using conductive and dielectric inks. The sensor exhibits a combination of high sensitivity for heat flux and low resistance to the flow of heat. These characteristics enable it to measure heat flux at surface boundaries with improved accuracy over conventional heat flux transducers (HFT's) because the temperature drop produced by the sensor is very small. The high sensitivity of the sensor makes it ideal for measuring heat flow through insulating materials, and well adapted to instrumenting heat flow in buildings, detecting fires at an early stage, or remotely measuring the temperature of string and web products in industrial processing.

Abstract: A microfabricated thermopile optimized as a differential temperature sensor provides differential temperature sensing between opposite edges of the device. A plurality of the thermopile sensors are stacked to increase the number of couples possible with an attendant increase in sensitivity.

Abstract: An apparatus and method for providing a topographical and thermal image of a semiconductor device. A probe (10) is made from a first ribbon of material (11) and a second ribbon of material (12) which forms a thermocouple junction (13). A probe tip (15) is then attached to the thermocouple junction (13) with an epoxy (14). In an alternate embodiment of the present invention, a probe (20) has a point region (17) which is formed by bending a portion of the thermocouple junction (13) and coating the point region (17) is coated with a thermally conductive material. An optical signal is then reflected off a planar portion of the first ribbon of material (11), the second ribbon of material (12), or the thermocouple junction (13) so the motion of the probe (10,20) can be monitored by an optical detector.

Abstract: The present invention provides a structure and a method of fabricating a thermoelectric Cooler directly on the backside of a semiconductor substrate. The thermoelectric (TE) cooler (thermoelectric cooler) disperses heat from an integrated circuit (IC) that is formed on the front-side of the silicon substrate. Spaced first bonding pad holes 28 are formed in the backside of a substrate that expose bonding pads 24. Second holes 32 are formed between the spaced first bonding pad holes 28. A first insulating layer 34 is formed over the backside of the substrate, but not over the bonding pad 24. A metal layer is formed lining the first bonding pad holes 28. A polysilicon layer 46 is formed over the surface of the backside of the substrate in the second holes. The polysilicon layer is implanted thereby forming alternating adjacent N and P doped sections 46p 46n in the second holes. The adjacent N and P doped polysilicon sections 46n 46p are electrically connected to the bonding pads 24 by the metal layer 38.

Abstract: A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a honeycomb structural body, filling spaces between walls defining the through holes and the semiconductor strips with an electrically insulating filler members made of an easily deformable material such as polyimide resin and silicone resin, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, and providing metal electrodes on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade.

Abstract: A thermoelectric material which exhibits an excellent thermoelectric performance even when it is used at elevated temperatures is shown and described. A thermoelectric material is provided having conductive layers made of a first semiconductor only, and barrier layers made of a second semiconductor only, that are alternatingly formed one upon the other. The interface of the barrier layer relative to the conductive layer is roughly formed to include a plurality of protuberances and a plurality of recesses, and the interface of the conductive layer relative to the barrier layer is roughly formed to fit the interface of the barrier layer. The ratio Ry/t of the maximum height Ry of the protuberance on the barrier layer to the thickness t of the barrier layer is set to be Ry/t.gtoreq.0.1. This makes it possible to enhance the strength of the heterojunction interface between the barrier layer and the conductive layer and to improve the heat resistance.

Abstract: A thermocouple array includes a dielectric layer having via openings therethrough, a first patterned conductive layer facing one surface of the dielectric layer, and a second patterned conductive layer facing another surface of the dielectric layer. Portions of the second patterned conductive layer can extend through the via openings to couple respective portions of the first patterned conductive layer. The second patterned conductive layer has a different thermal emf than the first patterned conductive layer. The dielectric layer, the first patterned conductive layer, and the second patterned conductive layer can be surface-conformable.

Abstract: A thermoelectric material having excellent thermoelectric performance is shown and described. A thermoelectric material is formed having a plurality of conductive layers and a plurality of barrier layers that are alternatingly formed one upon the other such that one conductive layer is sandwiched by two barrier layers. The conductive layers are composed of a first semiconductor only, and the two barrier layers located on the outermost sides of the material each have a main layer made of a second semiconductor only and a boundary layer made of the first and second semiconductors. A plurality of barrier layers positioned in between the conductive layers each have a main layer and two boundary layers provided on opposite sides of the main layer. The thickness t.sub.1 of the conductive layer and the thickness t.sub.2 of the barrier layer have a relationship of 2t.sub.1 .ltoreq.t.sub.2 .ltoreq.50t.sub.1.

Abstract: A thermoelectric device is provided which is good in terms of responsibility to heat, by which a relatively large electric power can be produced, which is good in terms of durability, and which can be manufactured at reduced cost. The thermoelectric device includes a substrate having a thickness of 2.0 mm or less, and a thick-film type thermoelectric material formed on the substrate, and having a thickness of from 0.01 mm to 1.0 mm. The thick-film type thermoelectric material is covered with a glassy coating. By the coating, the thick-film type thermoelectric material is inhibited from coming off, and from deteriorating oxidatively.

Abstract: A Peltier effect module comprising a plurality of Peltier effect elements arranged in parallel between a pair of substrates where the Peltier effect elements are connected to connection electrodes disposed on the substrates. The array of Peltier effect elements is sealed off by a hollow seal frame surrounding the Peltier effect element array with a seal formed by a bond between both end edges of the seal frame and the substrates. Because the perimeter around the Peltier effect elements is sealed using a seal frame metalically bonded at both ends to the substrates, resistance to moisture penetration is largely determined by the material from which the seal frame is made. Therefore, by appropriately selecting the seal frame materials, the Peltier effect module can be reliably protected for a long period of time against moisture penetration.

Abstract: A thermoelectric radiator for generating a direct current while providing at least a portion of the necessary cooling is formed with a first and second plurality of interdigitated thermoelectric lamella which are electrically joined and are connected to the positive and negative portions of the electrical system. The result is direct current flow when a heated coolant is passed over the lamella.

Abstract: A method of making a microelectronic thermoelectric device comprises the steps of providing a substrate of a predetermined material, creating thermally isolated, alternating P-type and N-type semiconductor materials on the substrate, electrically connecting the P-type areas to adjacent N-type areas on opposite sides of each P-type area so that each side of a P-type area is connected to an adjacent different N-type area and leaving a free P-type end and a free N-type end, and providing an electrical lead on the free end of the P-type area and an electrical lead on the free end of said N-type area for connection to a source of electrical power. Further, a microelectronic thermoelectric device comprises a plurality of sections of semiconductor material of a first conductivity type and a plurality of sections of second conductivity type opposite to the first type. The sections are arranged to alternate from one type to the other and are thermally isolated from one another.

Abstract: A thermoelectric device fabricated of at least two dissimilar thermoelements and at least one of the thermoelements has a conductor in parallel therewith increasing the Figure of Merit. The thermoelements are also surrounded by a conductor along the leg lengths thereby simplifying the manufacturing process.

Abstract: Electrothermal conversion elements, apparatus and methods for use in comparing, calibrating and measuring electrical signals utilizing a thin film heater on a thin, low mass, low thermal conductivity substrate and low mass thermoresistive or PN junction thermal radiation sensors. The element emits IR radiation in response to electrical input. The radiation is collected and converted to an electrical signal proportional to the RMS value of the input signal. Isothermal operation enhances both IR and electrical operation.

Abstract: A probe (10) is formed to provide a topographical and thermal image of a semiconductor device. The probe (10) is made from a first ribbon of material (11) and a second ribbon of material (12) which forms a thermocouple junction (13). A probe tip (15) is then attached to the thermocouple junction (13) with an epoxy (14). In an alternate embodiment of the present invention, a probe (20) has a point region (17) which is formed by bending a portion of the thermocouple junction (13) and coating the point region (17) is coated with a thermally conductive material. An optical signal is then reflected off a planar portion of the first ribbon of material (11), the second ribbon of material (12), or the thermocouple junction (13) so the motion of the probe (10,20) can be monitored by an optical detector.

Abstract: An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses.

Abstract: Apparatus is disclosed in which a pair of elongated solid cylindrical metal conductors mounted with their central axes mutually parallel are connected at their ends to form a closed electrical circuit path, there being heat sinks at spaced positions along their length which serve as heat transfer means setting up a temperature gradient along the lengths of the conductors. A strong electrical current flow in the conductors creates a circumferential magnetic field in the metal directed at right angles to the heat flow and this, by the Nernst Effect, produces a radial electric field gradient in the metal coupled with the transient accumulation of stored electrical energy. The apparatus disclosed serves for the experimental testing of energy conversion and storage by thermoelectric processes occurring in the metal and the ultimate utilization of the technology involved.

Abstract: A thermo-electric power generating element has the structure that two kinds of metal sheets, or foils, which form a thermocouple combination are laminated together and alternately connected at one end and the other end so as to form a plurality of thermocouples connected in series. When hot junctions are held at a high temperature, a temperature gap along the thermal flux is generated in the sheets, or foils. Electromotive force at every thermocouple derived from the temperature gap is summed up to a voltage level effective for outputting electric power through takeoff leads. This power generator is useful for converting waste heat to electric power. When the thermocouple pile is made from corrugated sheets, or foils, electric power is outputted with high efficiency.

Abstract: The detection device includes at least one thermocouple (10) arranged aligned with the bottom head of the vessel of the nuclear reactor, having a first branch (9) made of a first metallic material and at least one second branch (11) made of a second metallic material, different from the first material, welded to a point on the first branch constituting a hot junction of the thermocouple (10). The first branch (9) of the thermocouple has the form of an elongate hollow section. The device furthermore includes means for analyzing the measurements taken by the thermocouples (10).

Abstract: A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.

Abstract: A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a honeycomb structural body, filling spaces between walls defining the through holes and the semiconductor strips with filler members, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, providing metal electrodes on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade, and removing the filler members or the honeycomb structural body and filler members.

Abstract: A thermoelectric module includes a switching circuit for switching the connection between a first thermoelectric element and a second thermoelectric element between series connection and parallel connection, a voltage detecting circuit for controlling the switching circuit by detecting the voltage of the second thermoelectric element, and a storage battery circuit for storing electricity utilizing the voltages generated by the first thermoelectric element and the second thermoelectric element connected by the switching circuit. A voltage generated from an applied temperature difference is detected by the voltage detecting circuit. If there is a sufficient temperature difference, the first thermoelectric element and second thermoelectric element are connected in parallel by the switching circuit to charge the electricity in the storage battery circuit using the doubled current.

Abstract: A thermopile detector for a temperature measuring instrument physically and electrically configured to supply an output signal which indicates a target temperature substantially independent of the influence of ambient temperature changes. The detector is comprised of a plurality of interleaved and electrically opposing thermocouples on a common surface of a substrate wherein the interleaved thermocouples are comprised of active thermocouples having a high emissivity coating to increase their sensitivity to infrared radiation and blind compensating thermocouples having a low emissivity coating to minimize their sensitivity to infrared radiation.

Abstract: A highly integrated thermal sensor (10) is responsive to radiation having wavelengths within a predetermined band of wavelengths. The sensor, which may be a thermopile, is comprised of a substrate (16) comprised of at least one semiconductor material. The substrate includes at least one active region disposed within a first surface of the substrate. The sensor further includes a plurality of thermally-responsive junctions (HJ, CJ) between dissimilar materials (22, 24) that are disposed within the at least one active region, wherein at least one of the thermally-responsive junctions is a hot junction. The hot junction is thermally isolated from the substrate by being suspended from the substrate on dielectric bridges or, in another embodiment, by a thermally insulating and patterned polymer. In a backside illuminated embodiment of this invention the sensor further includes an optical cavity (26) formed within a second surface of the substrate in registration with the active region.

Abstract: A reversible thermoelectric converter includes first and second quantum well diodes and an electrical connection between the first and second quantum well diodes without a thermal barrier between them. Each quantum well diode includes first and second electrodes wherein electrons are quantized in discrete energy levels and a dielectric layer providing a potential barrier between the first and second electrodes. When electrons in the first quantum well diode have a higher temperature than the electrons in the second quantum well diode, electric voltage fluctuations resulting from transitions of the electrons between the energy levels in the first quantum well diode are coupled from the first quantum well diode to the second quantum well diode. The reversible thermoelectric converter can be operated for power conversion of thermal energy to electric energy, as a heat pump or a refrigerator, or as an amplifier.

Abstract: A thermoelectric couple device including a thermoelectric couple consisting of a first aluminum oxide base plate, a second aluminum oxide base plate, a plurality of copper foils respectively welded to the first and second aluminum oxide base plates, and a plurality of N type thermoelectric semiconductors, and P type thermoelectric semiconductors respectively welded to the copper foils between the first and second aluminum oxide base plates and alternatively connected in series; and a temperature detecting device mounted on the first aluminum oxide base plate and disposed between the first and second aluminum oxide base plates to detect the inside temperature of the thermoelectric couple.

Abstract: A thermoelectric generator includes a plurality of thermoelectric junctions embedded in each of a pair of thermally conductive and electrically non-conductive layers, these layers being separated by a thermally and electrically non-conductive layer. The junctions are connected to form a thermopile. An absorbent layer is provided adjacent one of the thermally conductive layers. A liquid such as water is applied to the absorbent layer, so that evaporation of the liquid from the absorbent layer enhances the temperature differential between the two thermally conductive layers.

Abstract: A high temperature resistant and corrosion resistant thermoelement for a thermocouple formed of a silicon base layer, a conductive thin film of a silicide of a transition metal such as titanium or molybdenum which is stable at temperatures in the range from 800.degree. C. to at least 1000.degree. C., preferably to at least about 1500.degree. C., and an oxygen diffusion limiting silica overlayer, and a method of forming such a thermoelement by depositing a conductive transition metal silicide film over a silicon base layer and heat treating the film in an oxidizing gas atmosphere having a partial pressure of oxidizing gas sufficient to oxidize silicon atoms from the transition metal silicide to form a continuous SiO.sub.2 overlayer, but insufficient to oxidize transition metal atoms from the transition metal silicide, in which silicon atoms from the transition metal silicide layer which are oxidized to form the SiO.sub.2 overlayer are replaced by silicon atoms from the silicon base layer.

Abstract: A Peltier effect device which detects in particular a condensation risk, includes a substrate and semiconducting bands disposed on the upper face of the substrate. The junctions connecting said bands which make up a series circuit are formed by semiconducting bands of N-type and P-type. Junctions of the same type, i.e., N-P type are situated on the central zone of the upper face of the substrate and defines a detection zone of the device. Semiconducting bands of one type are placed on one side of the upper face of the substrate and bands of the other type are placed on the other side of the upper face of the substrate. The substrate also includes at the peripheral zone of each band, except for a frontmost N-type band and a rearmost P-type band, a plated hole extending through the substrate to a lower face of the substrate and to a plating of the lower face such that a plated hole situated at an end of the P-type band is connected to a plated hole situated at an end of a next N-type band.

Abstract: A method is provided for forming selective electrical contacts on a structure of alternating ultrathin semiconductor layers of two different types, so that electrical connection can be made separately to the layers of a given type. Selective etching of first one type of layers at one side of the structure and then the second type of layers at another side produces digitate edge patterns suitable for deposition of ohmic contacts. Any method can be used which directs particles of a conducting material onto the digitate edge portions at an angle to build up material on only one set of layers at a time. The gaps between adjacent protruding layers of the same doping type are filled in as the deposition continues. In this way the high-temperature steps required for diffusion or ion implantation activation are avoided. For a mesa-etched n-i-p-i chip the contact is allowed to extend onto adjacent regions of the supporting wafer so that further electrical contacting can be done in those regions.

Abstract: A superlattice comprising alternating layers of (PbTeSe).sub.m and (BiSb).sub.n (where m and n are the number of PbTeSe and BiSb monolayers per superlattice period, respectively) having engineered electronic structures for improved thermoelectric cooling materials (and other uses) may be grown by molecular beam epitaxial growth. Preferably, for short periods, n+m<50. However, superlattice films with 10,000 or more such small periods may be grown. For example, the superlattice may comprise alternating layers of (PbTe.sub.1-z Se.sub.z).sub.m and (Bi.sub.x Sb.sub.1-x).sub.n. According to a preferred embodiment, the superlattice comprises a plurality of layers comprising m layers of PbTe.sub.0.8 Se.sub.0.2 and n layers of Bi.sub.0.9 Sb.sub.0.1, where m and n are preferably between 2 and 20.

Abstract: Ultrathin film thermocouple devices, which are extremely small in size and thickness and flexible, allow measurement of temperatures during processing of flexible elements which flex during processing. The invention includes temperature measuring devices where the thermocouple is deposited on the flexible element being processed. Such thermocouple devices are useful in a variety of applications where conventional temperature measuring devices can not be used. Such thermocouples devices are made from a variety of thermocouple metals including copper-constantan and copper-nickel and may be fabricated on flexible substrates by evaporation. Detailed fabrication procedures are also described. These devices are surprisingly robust, able to withstand extensive flexing without alteration or deterioration in thermocouple properties, and exhibit thermal EMF's which are reproducible from sample to sample and readily measurable.

Abstract: Multijunction thermal converters are formed in an integral multifilm membrane form over a through opening in a nonmagnetic, dielectric substrate. Through the use of conventional photolithographic and etching techniques, very compact, rugged and precise integrated structures are formed to include either single linear elongate heater elements, bifilar or trifilar heater elements, and multijunction thermopiles at reasonable cost. Disposition of the heater element and hot junctions of the thermopiles over a through opening in the substrate, with the cold junctions of the thermopiles disposed over the substrate thickness, enables the heating element to provide a substantially isothermal uniform heating of the thermocouple hot junctions to obtain high thermal efficiency and reduce Thompson and Peltier heating effects. Forming the essential elements into an integrated multifilm membrane also makes possible minimization of interconnections between the elements, and this results in minimized reactance.

Abstract: Heat transfer apparatus, whether in panel or tubular form, comprises bimetallic laminations, at least one of the metals being ferromagnetic. A temperature differential causes thermoelectric current circulation (in effect, a d.c. eddy-current) within each lamination which develops a magnetizing H-field. A transverse electric potential may also be used to enhance thermoelectric activity across a bimetallic junction. The ferromagnetic B-field enhancement develops in turn a circulating diamagnetic reaction current which augments the thermoelectric activity and causes an overriding thermal feedback and bistable direction-of-heat-flow operation. Control involves the priming action of an applied electric and/or magnetic field or preheating by electrical resistors in the heat sinks. Application in a thermally powered electric transformer generator is described.

Abstract: In the conventional thermoelectric conversion module, P-type thermoelectric semiconductor chips and N-type thermoelectric semiconductor chips are alternately arranged in both the longitudinal and the transverse directions. Consequently, assembling work is complicated and there arises the problem in quality that erroneous types of chips are arranged. In the present invention, therefore, each of either rows of chips or columns of chips is constituted by thermoelectric semiconductor chips of the same type, thereby to improve assembling workability as well as to prevent erroneous arrangement. Furthermore, as a preferred fabricating method, bar-shaped thermoelectric semiconductors are used and are jointed to one substrate and then, are electrically disconnected between the leads.

Abstract: An intermetallic film thermocouple has an amorphous phase and a Seebeck coefficient above 900 .mu.V/.degree. C. Such thermocouples can be prepared by vapor-depositing an intermetallic and quenching the resulting intermetallic film.

Abstract: A thermopile 30 comprises a stacked assembly of bimetallic layers in which there is full conductor interface contact over the distance separating hot and cold surfaces 31, 32. The assembly may include dielectric layers forming a capacitor stack. A.C. current through the stack is matched in strength to the Seebeck-generated thermoelectric current circulating in each bimetallic layer. The resulting current snakes through the stack to cause Peltier cooling at one heat surface and heating at the other. A.C. operation at a kilocycle frequency enhances the energy conversion efficiency as does heat flow parallel with the junction interface.

Abstract: A differential thermal analysis sensor consisting of two low-impedance differential thermopiles. Each thermopile consists of a series of thermocouples joined in series, with the measuring junctions of the thermocouples arranged around a uniform temperature measuring region, and the thermoelectric reference junctions of the thermocouples arranged around a uniform temperature thermoelectric reference region. The differential thermal analysis sensor can be used for single-sample heat flux differential thermal analysis measurements, dual-sample heat flux differential thermal analysis measurements, or power compensation differential thermal analysis measurements.

Abstract: A method of manufacturing a thermoelectric device including the steps of printing a patterned mask on both sides of a strip of copper foil, shielding one side and plating a pattern of nickel on the other side, removing the shield, securing the foil to a flexible film and etching copper from predesignated areas, creating the thermoelectric device.

Abstract: The invention relates to thermocouples which are formed from a junction of ruthenium oxide (RuO.sub.2) and iridium oxide (IrO.sub.2). The resulting thermocouple produces a typical electrical output of about 4.5 .mu.V/k at 40.degree. C. to about 4.1 .mu.v/K at 200.degree. C. The thermocouples are extremely resistant to corrosion and thus may be used for direct contact with corrosive environments such as halide containing acids, cyanides, chlorates or peroxides. Because the thermocouples can directly contact the environment, they are 100 to 1000 times faster than commercially available sheathed sensors.

Abstract: Thermoelectric heat pumps using recuperative heat exchange are described. These devices use sets of thermocouples (thermoelectric couples) arranged side-by-side to form a plate. The plate is positioned in a fluid-containing vessel and heat exchanging fluid is flowed down one side of the plate and up the other side. In these devices the heat flow, and thus the driving thermal gradient on each thermoelectric couple in the device, is in a direction from one side of the plate to the other side, i.e., other than the direction of the device's working thermal gradient, which is the direction of the flow of fluid. Generally these two directions (driving gradient on the thermoelectric couples and fluid flow-working thermal gradient) are essentially orthogonal to each other.

Abstract: A thermoelectric device has a cylindrical structure with a hollow central annulus member in which a fluid is pumped so that the heated fluid is pumped from the center of the structure and discharged on the outer surface of an outer annulus member or with the reversal of electrical current, the heated fluid is pumped from the outer periphery and discharged in the central tube. A plurality of thermoelectric cells are positioned in the space between the inner and outer annulus members with the cells being radially directed relative to the axis of the inner annulus member. A thermoelectric device having a similar structure may be used for the conversion of thermal energy to electrical energy when a thermal gradient is imposed between the inner member of the structure and the peripheral surface.

Abstract: A high voltage multitube alkali metal thermal electric convertor having a plurality of closely packed tubular cells disposed in a tube sheet in a vessel and electrically connected in series, the tube sheet dividing the vessel into a high pressure high temperature portion having a wick and heater disposed therein and a low pressure low temperature portion having a wick disposed in a condenser from which heat is removed; a pump for transferring liquid metal therebetween and a tab on a wick disposed in the tubular cell to remove excess liquid metal and prevent shorting between the cells.

Abstract: A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium.